Excitation spectrum for ultrafast photogeneration of charged solitons in polyacetylene

Ultrafast photoinduced absorption by IRAV modes is used to detect charged solitons in oriented polyacetylene. We find that soliton pairs are photogenerated within our time resolution of similar to250 fs with similar to100% quantum efficiency (phi(ch)). The excitation spectrum of phi(ch) shows an onset at 1.0 eV, with a weak photon energy dependence up to 4.7 eV. These results agree with the ultrafast soliton formation predicted by Su and Schrieffer and with the SSH threshold of 2E(g)/pi for soliton pair production.

A semiconductor strain gage tactile transducer

This paper describes the development of a semiconductor strain gage tactile transducer. It was designed with the goal of measuring finger forces without affecting the hand dexterity. The transducer structure was manufactured with stainless steel and has small dimensions ( 4 min diameter and I min thickness). It is light and suitable to connect to the finger pads. It has a device that prevents its damage when forces are applied. The semiconductor strain gage was used over due its small size and high sensitivity, although it has high temperature sensitivity. Theory, design and construction details are presented the signal conditioning circuit is very simple because the semiconductor strain gage sensitivity is high. It presents linear response from 0 to 100 N, 0.5 N resolution, fall time of 7.2 ms, good repeatability, and small hysteresis. The semiconductor strain gage transducer has characteristics that can make it very useful in Rehabilitation Engineering, Robotics, and Medicine.

Differential cross sections for target excitation and positronium formation in positron-helium scattering

Positronium formation and target excitation in positron-helium scattering have been investigated using the close-coupling approximation with realistic wave functions for the positronium and helium atoms. The following eight states have been used in the close-coupling scheme: He(1s1s), He(1s2(1)s), He(1s2(1)p), He(1s3(1)s), He(1s3(1)p), Ps(1s), Ps(2s), and Ps(2p), where Ps stands for the positronium atom. Calculations are reported of differential cross sections for elastic scatering,, inelastic target excitation to He(1s2(1)s) and He(1s2(1)p) slates, and rearrangement transition to Ps(1s), Ps(2s), and Ps(2p) states for incident positron energies between 40 and 200 eV. The coincidence parameters for the transition to the He(1s2(1)p) state of helium are also reported and briefly discussed. [S1050-2947(98)05101-4].

Controlling Excitation Inversion of a Cooper Pair Box Interacting with a Nanomechanical Resonator

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Light and thermal excitation of depolarization current in indirect bandgap Alx Ga1-xAs

Monochromatic light excitation in conjunction with thermally stimulated depolarization current measurements are applied to indirect bandgap AlxGa1-xAs. The obtained average activation energy for dipole relaxation is in very close agreement with the DX center binding energy. Monochromatic light induces state transition in the defect and makes possible the identification of dipoles observed in the dark. Charge relaxation currents are destroyed by photoionization of Al0.5Ga0.5As using either 647 nm Kr+ or 488 nm Ar+ laser lines, which are above the DX center threshold photoionization energy. It suggests that correlation may exist among charged donor states DX--d+. Sample resistance as a function of temperature is also measured in the dark and under illumination and shows the probable X valley effective mass state participation in the electron trapping. Ionization with energies of 0.8 eV and 1.24 eV leads to striking current peak shifts in the thermally stimulated depolarization bands. Since vacancies are present in this material, they may be responsible for the secondary band observed in the dark as well as participation in the light induced recombination process.

Oxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources

Since oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type conductivity. Since bandgap transitions are in the ultraviolet range, its photoconductivity is strongly dependent on the excitation source. We have measured variation of photoconductivity excitation with wavelength for tin dioxide grown by dip-coating sol-gel technique using several light sources: tungsten lamp, xenon, mercury and deuterium, and present selected results. The main band is obtained in the range 3-4eV according to light source spectrum in the ultraviolet range. The presence of oxygen in the cryostat also affects the spectrum since electron-hole pairs react with adsorbed oxygen specimens. © 1999 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.

Open and standardized tools for smart transducer networking

IEEE 1451 Standard is intended to address the smart transducer interfacing problematic in network environments. Usually, proprietary hardware and software is a very efficient solution to in planent the IEEE 1451 normative, although can be expensive and inflexible. In contrast, the use of open and standardized tools for implementing the IEEE 1451 normative is proposed in this paper. Tools such as Java and Phyton programming languages, Linux, programmable logic technology, Personal Computer resources and Ethernet architecture were integrated in order to constructa network node based on the IEEE 1451 standards. The node can be applied in systems based on the client-server communication model The evaluation of the employed tools and expermental results are presented. © 2005 IEEE.

Optical excitation of charge carriers from intra-bandgap states in Ce-doped SnO2 thin films

Optical excitation of Ce3+-doped SnO2 thin films, obtained by the sol-gel-dip-coating technique, is carried out and the effects on electrical transport are evaluated. Samples are doped with O. lat% of Ce, just above the saturation limit. The excitation is done with an intensity-controlled halogen-tungsten lamp through an interference filter, yielding an excitation wavelength of 513nm, 9 nm wide (width at half intensity peak). Irradiation at low temperature (25K) yields a conductivity increase much lower than above bandgap light. Such a behavior assures the ionization of intra-bandgap defect levels, since the filter does not allow excitation of electron-hole pairs, what would happen only in the UV range (below about 350nm). The decay of intra-bandgap excited levels in the range 250-320 K is recorded, leading to a temperature dependent behavior related to a thermally excited capture cross section for the dominating defect level. © 2008 American Institute of Physics.

Measurement of orthovoltage X-ray intensity with a lithium niobate transducer

A microcontrolled instrument for measuring the energy fluence rate (or intensity) of X-ray pulses in the orthovoltage range of 120 to 300 kV is described. The prototype instrument consists of a pyroelectric sensor, a low-noise highsensitivity current-to-voltage converter, a microcontroller and a digital display. The response of the instrument is nonlinear with the intensity of the radiation. The precision is better than 3%. The equipment is inexpensive, rugged, simple to construct and has good long-term stability. © 2009 Springer-Verlag.

Characterization of the temperature, load and damage effects using piezoelectric transducer patches based on fuzzy clustering

Structural Health Monitoring (SHM) denotes a system with the ability to detect and interpret adverse changes in a structure. One of the critical challenges for practical implementation of SHM system is the ability to detect damage under changing environmental conditions. This paper aims to characterize the temperature, load and damage effects in the sensor measurements obtained with piezoelectric transducer (PZT) patches. Data sets are collected on thin aluminum specimens under different environmental conditions and artificially induced damage states. The fuzzy clustering algorithm is used to organize the sensor measurements into a set of clusters, which can attribute the variation in sensor data due to temperature, load or any induced damage.

HW/SW for an intelligent transducer network based on IEEE 1451 standard

This work describes a hardware/software co-design system development, named IEEE 1451 platform, to be used in process automation. This platform intends to make easier the implementation of IEEE standards 1451.0, 1451.1, 1451.2 and 1451.5. The hardware was built using NIOS II processor resources on Alteras Cyclone II FPGA. The software was done using Java technology and C/C++ for the processors programming. This HW/SW system implements the IEEE 1451 based on a control module and supervisory software for industrial automation. © 2011 Elsevier B.V.

Nonlinear dynamics of a flexible portal frame under support excitation

This paper presents a nonlinear dynamic analysis of a flexible portal frame subjected to support excitation, which is provided by an electro-dynamical shaker. The problem is reduced to a mathematical model of four degrees of freedom and the equations of motion are derived via Lagrangian formulation. The main goal of this study is to investigate the dynamic interactions between a flexible portal frame and a non-ideal support excitation. The numerical analysis shows a complex behavior of the system, which can be observed by phase spaces, Poincaŕ sections and bifurcation diagrams. © 2012 American Institute of Physics.

Avaliação e implementação de métodos de estimação de tempo de atraso de sinais de ultra-som

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Desenvolvimento e implementação de um sistema para detecção de falhas em estruturas usando microcontrolador

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Fenômenos não-lineares, incluindo-se os não-ideias, em captura de energia utilizando-se dispositivos piezoelétricos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)