A framework for the analysis of thermal losses in reciprocating compressors and expanders

This article presents a framework that describes formally the underlying unsteady and conjugate heat transfer processes that are undergone in thermodynamic systems, along with results from its application to the characterization of thermodynamic losses due to irreversible heat transfer during reciprocating compression and expansion processes in a gas spring. Specifically, a heat transfer model is proposed that solves the one-dimensional unsteady heat conduction equation in the solid simultaneously with the first law in the gas phase, with an imposed heat transfer coefficient taken from suitable experiments in gas springs. Even at low volumetric compression ratios (of 2.5), notable effects of unsteady heat transfer to the solid walls are revealed, with thermally induced thermodynamic cycle (work) losses of up to 14% (relative to the work input/output in equivalent adiabatic and reversible compression/expansion processes) at intermediate Péclet numbers (i.e., normalized frequencies) when unfavorable solid and gas materials are selected, and closer to 10-12% for more common material choices. The contribution of the solid toward these values, through the conjugate variations attributed to the thickness of the cylinder wall, is about 8% and 2% points, respectively, showing a maximum at intermediate thicknesses. At higher compression ratios (of 6) a 19% worst-case loss is reported for common materials. These results suggest strongly that in designing high-efficiency reciprocating machines the full conjugate and unsteady problem must be considered and that the role of the solid in determining performance cannot, in general, be neglected. © 2014 Richard Mathie, Christos N. Markides, and Alexander J. White. Published with License by Taylor & Francis.

Thermal entanglement in a two-qubit Heisenberg XXZ spin chain under an inhomogeneous magnetic field

The thermal entanglement in a two-qubit Heisenberg XXZ spin chain is investigated under an inhomogeneous magnetic field b. We show that the ground-state entanglement is independent of the interaction of z-component J(z). The thermal entanglement at the fixed temperature can be enhanced when J(z) increases. We strictly show that for any temperature T and J(z), the entanglement is symmetric with respect to zero inhomogeneous magnetic field, and the critical inhomogeneous magnetic field b(c) is independent of J(z). The critical magnetic field B-c increases with the increasing parallel to b parallel to but the maximum entanglement value that the system can arrive at becomes smaller.

Thermal entanglement in two qutrits system

The thermal entanglement in a two-qutrit system with two spins coupled by exchange interaction is investigated in terms of the measure of entanglement called "negativity". It is found that the thermal entanglement is present and evolvements symmetrically between both ferromagnetic and antiferromagnetic exchange couplings with the temperature. Moreover the critical temperature at which the negativity vanishes increases with the exchange coupling constant J. From the temperature and magnetic field dependences we demonstrate that the temperature and the magnetic field can affect the feature of the thermal entanglement significantly.

Thermal entanglement in spin-1 biparticle system

The thermal entanglement in a two-qubit Spin-1 system with two spins coupled by exchange interaction is investigated in terms of the measure of entanglement called "negativity". It is found that the thermal entanglement exists and is symmetric for both ferromagnetic and antiferromagnetic exchange couplings. Moreover, the critical temperature at which the negativity vanishes increases with the exchange coupling constant J. From the temperature and magnetic field dependences we demonstrate that the temperature and the magnetic field can affect the feature of the thermal entanglement significantly. (C) 2004 Elsevier B.V. All rights reserved.

The effects of nonlinear couplings and external magnetic field on the thermal entanglement in a two-spin-qutrit system

We investigate the effects of nonlinear couplings and external magnetic field on the thermal entanglement in a two-spin-qutrit system by applying the concept of negativity. It is found that the nonlinear couplings favor the thermal entanglement creating. Only when the nonlinear couplings vertical bar K vertical bar are larger than a certain critical value does the entanglement exist. The dependence of the thermal entanglement in this system on the magnetic field and temperature is also presented. The critical magnetic field increases with the increasing nonlinear couplings constant vertical bar K vertical bar. And for a fixed nonlinear couplings constant, the critical temperature is independent of the magnetic field B. (c) 2005 Elsevier B.V. All rights reserved.

Thermal entanglement in a two-spin-qutrit system under a nonuniform external magnetic field

The thermal entanglement in a two-spin-qutrit system with two spins coupled by exchange interaction under a magnetic field in an arbitrary direction is investigated. Negativity, the measurement of entanglement is calculated. We find that for any temperature the evolvement of negativity is symmetric with respect to magnetic field. The behavior of negativity is presented for four different cases. The results show that for different temperature; different magnetic field give maximum entanglement. Both the parallel and antiparallel magnetic field cases are investigated qualitatively (not quantitatively) in detail, we find that the entanglement may be enhanced under an antiparallel magnetic field.

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS

By using the technique of elastic recoil detection (ERD), we have measured the hydrogen profiles in a-Si:H/a-Si structure samples annealed at various temperatures with and without electrical bias, and investigated the influence of electrical bias on hydrogen diffusion. The results show that hydrogen diffusion in a-Si is significantly enhanced by the action of electrical bias. The existence of the excess carriers, which are introduced by electrical injection, is considered to be responsible for the enhancement of hydrogen diffusion, and the microprocess of hydrogen transport has been exploited.

THERMAL POPULATION IN ASYMMETRIC DOUBLE WELLS COUPLED BY HOLE MIXING TUNNELING

The thermal population in photocarrier systems coupled by hole mixing tunneling is studied by an analysis of the high energy tails in cw photoluminescence spectra of asymmetric coupled double wells. Photocarriers in wide well are heated due to hole transfer from the narrow well through resonant tunneling as well as by photon heating. The influences of the excitation intensity and lattice temperature on the tunneling transfer and thermal population are discussed.

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.