In-situ-Präparation von komplexen supraleitenden und ferroelektrischen Heterostrukturen mittels gepulster Laser-Deposition

In der vorliegenden Arbeit ist die Konstruktion und der Aufbau eines Systems zur gepulsten Laserablation von dünnen Schichten beschrieben. Die hohe Flexibilität der Anlage wird ermöglicht durch einen sechsfach-Targethalter und eine Heizerkonstruktion, die einfachen Substrateinbau, hohe Temperaturhomogenität und einen zugänglichen Temperaturbereich von bis zu 1000°C erlaubt. Durch eine komplexe Laser-Optik, die eine homogene Energiedichte auf dem Target sicherstellt, wird eine optimale Filmqualität erreicht.Durch die Entwicklung einer zweistufigen Prozeßführung für Y-stabilisiertes ZrO2 wird eine Wachstumsbasis hoher kristalliner Qualität für funktionale Oxidschichten auf Silizium zur Verfügung gestellt. Es zeigt sich, daß die dielektrischen Eigenschaften der YSZ Schicht stark vom Sauerstoffgehalt, der Grenzflächenmorphologie sowie der Dicke der ersten Schicht abhängig sind. Basierend auf dieser Schicht wurde BaZrO3 als zusätzliche Pufferschicht für den Hochtemperatursupraleiter (HTSL) YBa2Cu3O7 ? untersucht. Unter Verwendung von SrTiO3 Substraten konnte die dielektrische Konstante von BaZrO3 zu ? ? 65 bestimmt sowie das Dispersionsverhalten mittels modifizierter Debye-Gleichungen erklärt werden. Vergleichende Messungen auf einkristallinen SrTiO3 Substraten zeigen eine erhöhte Übergangstemperatur von 90.2 K und eine wesentliche Verbesserung der Oberflächenrauhigkeit des HTSL von 2 nm (rms) durch die Verwendung von BaZrO3 Schichten hoher Qualität. Eine nur wenige Monolagen dicke zusätzliche BaZrO3 Pufferschicht auf YSZ-gepufferten Silizium Substraten verhindert die Ausbildung von ?9° rotierten YBCO Körnern, die üblicherweise bei der direkten Deposition auf YSZ beobachtet werden. Resistive Messungen mit Übergangstemperaturen oberhalb 89 K sind vergleichbar zu Ergebnissen, die für CeO2/YSZ Pufferschichtkombinationen erreicht werden. Durch kontinuierliche Gitteranpassung wurde eine neue Schichtabfolge YBCO/CeO2/YSZ/BaZrO3 für die Erzeugung bi-epitaxialer Korngrenzen-Josephson Kontake gefunden und deren Epitaxiebeziehungen geklärt. Eine in-situ deponierte Schichtabfolge zeigt mit einer Übergangstemperatur von 91.7 K und einer Übergangsbreite von 0.15 K supraleitende Eigenschaften vergleichbar zu den besten bisher auf diesem Gebiet erreichten Ergebnissen. Voruntersuchungen zur Realisierung eines Josephsonkontaktes mit dieser Schichtabfolge zeigen jedoch, daß die erreichten Eigenschaften für die technologische Anwendung nicht ausreichend sind.Die Verwendung einer YSZ/CeO2 Pufferschichtkombination ermöglicht die Herstellung von c Achsen orientiertem ferroelektrischem SrBi2Ta2O9 auf Silizium. Im Gegensatz hierzu führt die direkte Deposition auf Silizium zu polykristallinem SrBi2Ta2O9 oder zur Ausbildung der Pyrochlor Phase, wenn nur YSZ als Pufferschicht verwendet wird. Obwohl die Polarisierung von SrBi2Ta2O9 in der ab-Ebene liegt, konnte in MFIS Strukturen ein Speicherfenster von maximal 0.87 V beobachtet werden, was eine Verbesserung um nahezu einen Faktor drei im Vergleich zu polykristallinem SrBi2Ta2O9 bedeutet. Messungen an ferroelektrischen Kondesatorstrukturen ergeben Hystereseschleifen mit einer remanenten Polarisierung von Pr = 6.5 µC/cm2 sowie einem Koerzitivfeld von Ec = 35 kV/cm. AFM Messungen im Piezo-Response Modus zeigen ferroelektrische Domänen, die durch Anlegen einer Gleichspannung reversibel umpolarisiert werden können. Im Nicht-Kontakt AFM Modus wurde die lokale Polarisierung der Schichten zu 3.4 µC/cm2 bestimmt. Weiterhin wurde eine alternative Pufferschichtkombination SrZrO3/YSZ zur Erzeugung von a-Achsen orientiertem SrBi2Ta2O9 untersucht. SrZrO3 zeigt a Achsen Orientierung in vier Wachstumsdomänen, die durch ein Model erklärt werden können. Die SrBi2Ta2O9 Schicht zeigt a Achsen sowie (116)-orientierte Körner mit derselben Domänenstruktur. Die dielektrische Konstanten von SrZrO3 und SrBi2Ta2O9 wurden zu ? ? 29 und ? ? 20 bestimmt. Die beobachteten Speicherfenster sind allerdings nicht ferroelektrischer Natur, sondern wahrscheinlich durch mobile Ionen und Ladungsfangstellen in den Pufferschichten verursacht. Die stark abgesenkte dielektrische Konstante von SrBi2Ta2O9 kann durch die im Vergleich zu polykristallinem verkleinerte Korngröße erklärt werden.

Spektromikroskopische Analyse von Nukleationsdomänen in epitaktischen Diamantschichten auf Ir,SrTiO 3 und von präsolaren SiC-Meteoritenkörnern

Im Rahmen dieser Arbeit wurden zwei verschiedene Systeme untersucht, deren verbindende Gemeinsamkeit in den verwendeten ortsauflösenden, spektroskopischen Messmethoden der Oberflächenanalytik, wie z.B. abbildendes XPS, Röntgennahkanten-Photoemissionsmikroskopie (XANES-PEEM) und Augerspektroskopie (AES) liegt. Im ersten Teil der Arbeit wurden Diamant-Nukleationsdomänen auf Ir/SrTiO3 untersucht und mit vorherrschenden Modellen aus der Literatur verglichen. Die Nukleationsdomänen, wie sie im Mikrowellen-induzierten CVD Prozess unter Verwendung der BEN Prozedur (bias-enhanced nucleation) entstehen, bilden die „Startschicht“ für ein heteroepitaktisches Wachstum einer hoch orientierten Diamantschicht. Sie entwickeln sich aber unter Bedingungen, unter denen 3D-Diamant abgetragen und weggeätzt wird. Mittels XANES-PEEM Messungen konnte erstmals die lokale Bindungsumgebung des Kohlenstoffs in den Nukleationsdomänen ortsaufgelöst aufgezeigt werden und aus AES Messungen ließ sich die Schichtdicke der Nukleationsdomänen abschätzen. Es zeigte sich, dass die Nukleationsdomänen Bereiche mit etwa 1 nm Dicke darstellen, in denen der Übergang von eine sp2-koordinierte amorphen Kohlenstoff- zu einer Diamantschicht mit hohem sp3 Anteil abläuft. Zur Erklärung des Nukleationsprozesses wurde auf das „Clustermodell“ von Lifshitz et al. zurückgegriffen, welches um einen wesentlichen Aspekt erweitert wurde. Die Stabilität der Nukleationsdomänen gegen die Ätzwirkung des Nukleationsprozesses auf Volumendiamant wird durch eine starke Wechselwirkung zwischen dem Diamant und dem Iridiumsubstrat erklärt, wobei die Dicke von etwa 1 nm als Maß für die Ausdehnung dieses Wechselwirkungsbereichs angesehen wird. Der zweite Teil der Arbeit beschäftigt sich mit der Charakterisierung präsolarer SiC-Körner und darin eingeschlossener Spurenelemente. Neben den Hauptelementen Si und C wurden auch Spinelle wie Chromit (FeCr2O4), Korund (Al2O3) und auch verschiedene Spurenelemente (z. B. Al, Ba und Y) nachgewiesen. Ferner wurden XPS-Linien bei Energien nachgewiesen, welche sich den Seltenen Erden Erbium, Thulium und Dysprosium zuordnen lassen. Aufgrund von Abweichungen zur Literatur bzgl. der ausgeprägten Intensität der XPS-Linien, wurde als alternative Erklärungsmöglichkeit für verschiedene Signale der Nachweis von stark schwefelhaltigen Körnern (z.B. so genannte „Fremdlinge“) mit Aufladungen von mehreren Volt diskutiert. Es zeigt sich, dass abbildendes XPS und XANES-PEEM Methoden zur leistungsfähigen chemischen Charakterisierung von SiC-Körnern und anderer solarer und präsolarer Materie im Größenbereich bis herab zu 100 – 200 nm Durchmesser (z.B. als Grundlage für eine spätere massenspektrometrische Isotopenanalyse)darstellen.

Transport properties of YBa 2 Cu 3 O 7, PrBa 2 Cu 3 O 7-superlattices

The understanding of the coupling between superconducting YBa2Cu3O7 (YBCO) layers decoupled by non superconducting PrBa2Cu3O7 (PBCO) layers in c-axis oriented superlattices was the aim of this thesis. For this purpose two conceptually different kind of transport experiments have been performed. rnrnIn the first type of transport experiments the current is flowing parallel to the layers. Here the coupling is probed indirectly using magnetic vortex lines, which are penetrating the superlattice. Movement of the vortex segments in neighbouring YBCO layers is more or less coherent depending on the thickness of both the superconducting and non superconducting layers. This in-plane transport was measured either by sending an external current through bridges patterned in the superlattice or by an induced internal current. rnThe vortex-creep activation energy U was determined by analysis of the in-plane resistive transition in an external magnetic field B oriented along the c-axis. The activation energies for two series of superlattices were investigated. In one series the thickness of the YBCO layers was constant (nY=4 unit cells) and the number of the PBCO unit cells was varied, while in the other the number of PBCO layers was constant (nP=4) and nY varied. The correlation length of the vortex system was determined to be 80 nm along the c-axis direction. It was found that even a single PBCO unit cell in a superlattice effectively cuts the flux lines into shorter weakly coupled segments, and the coupling of the vortex systems in neighbouring layers is negligible already for a thickness of four unit cells of the PBCO layers. A characteristic variation of the activation energy for the two series of superlattices was found, where U0 is proportional to the YBCO thickness. A change in the variation of U0 with the current I in the specimen was observed, which can be explained in terms of a crossover in the vortex creep process, generated by the transport current. At low I values the dislocations mediated (plastic) vortex creep leads to thermally assisted flux-flow behaviour, whereas at high current the dc transport measurements are dominated by elastic (collective) creep.rnThe analysis of standard dc magnetization relaxation data obtained for a series superlattices revealed the occurrence of a crossover from elastic (collective) vortex creep at low temperature to plastic vortex creep at high T. The crossover is generated by the T dependent macroscopic currents induced in the sample. The existence of this creep crossover suggests that, compared with the well known Maley technique, the use of the normalized vortex creep activation energy is a better solution for the determination of vortex creep parameters.rnrnThe second type of transport experiments was to measure directly a possible Josephson coupling between superconducting CuO2 double planes in the superlattices by investigation of the transport properties perpendicular to the superconducting planes. Here three different experiments have been performed. The first one was to pattern mesa structures photolithographically as in previous works. The second used three-dimensional nanostructures cut by a focused ion beam. For the these two experiments insufficient patterning capabilities prevented an observation of the Josephson effect in the current voltage curves. rnA third experiment used a-axis and (110) oriented YBCO films, where in-plane patterning can in principle be sufficient to measure transport perpendicular to the superconducting planes. Therefore the deposition of films with this unusual growth orientation was optimized and investigated. The structural and microstructural evolution of c-axis to a-axis orientation was monitored using x-ray diffraction, scanning electron microscopy and magnetization measurements. Films with full a-axis alignment parallel to the substrate normal could be achieved on (100)SrTiO3. Due to the symmetry of the substrate the c-axis direction in-plane is twofold. Transferring the deposition conditions to films grown on (110)SrTiO3 allowed the growth of (110) oriented YBCO films with a unique in-plane c-axis orientation. While these films were of high quality by crystallographic and macroscopic visual inspection, electron microscopy revealed a coherent crack pattern on a nanoscale. Therefore the actual current path in the sample was not determined by the macroscopic patterning which prohibited investigations of the in-plane anisotropy in this case.rn

Laserablation von oxidischen Multilagenstrukturen zur Untersuchung von heteroepitaktischen Grenzflächenzuständen

Die Deposition von dünnen, metallischen Schichten auf Silizium-Substraten stellt bereits seit Jahrzehnten die wichtigste Möglichkeit dar, um die wachsenden Anforderungen der Speichertechnologien zu erfüllen. Obwohl Multilagenstrukturen aus oxidischen Schichten eine nahezu unerschöpfliche Vielfalt an neuen Effekten bieten, kommen diese aktuell nur in Nischenanwendungen zum Einsatz. Der Fokus dieser Arbeit liegt auf dem Verständnis von Phänomenen, die nur an Grenzflächensystemen zu beobachten sind. Die Basis der Untersuchungen stellten die Präparation der Multilagenstrukturen durch Laserablation dar. Eine Untersuchung der strukturellen Eigenschaften von multiferroischen BiFeO3 (BFO)-Schichten erlaubte eine Analyse der Wachstumsmodi und der Symmetrie der Einheitszelle von BFO unter heteroepitaktischer Verspannung. Durch Piezokraftmikroskopie konnte die ferroelektrische Domänenstruktur dünner BFO-Schichten analysiert werden. Die Abbildung der magnetischen Domänenstruktur der ferromagnetischen La0,67Sr0,33MnO3 (LSMO)-Schicht und der antiferromagnetischen BFO-Schicht einer Bilagenstruktur durch Photoemissionselektronenmikroskopie erlaubte eine Analyse der Austauschkopplung an der Grenzfläche. Durch elektronische Rekonstruktion entsteht an der LaAlO3 (LAO) /SrTiO3 (STO)-Grenzfläche ein leitfähiger, quasi-zweidimensionaler Zustand. Dessen Transporteigenschaften wurden mit einem Schwerpunkt auf deren Beeinflussung durch ein elektrisches Feld charakterisiert. Diese Ergebnisse führten zur Implementierung einer ferroelektrischen BFO-Schicht zur Manipulation der Leitfähigkeit an der LAO/STO-Grenzfläche. Die Kontrolle des Widerstandes eines mikrostrukturierten Bereichs durch die Polarisation der BFO-Schicht erlaubt die Nutzung der Struktur als Speichertechnologie.

Studio mediante magnetometro moke di film sottili di manganite per applicazioni in spintronica.

In questo lavoro di tesi è stata studiata l'anisotropia magnetica di film sottili epitassiali di La0.7Sr0.3MnO3 (LSMO), cresciuti con la tecnica Channel Spark Ablation su substrati monocristallini di SrTiO3 (001). L'interesse nei confronti di questi materiali nasce dal fatto che, grazie alla loro proprietà di half-metallicity, sono usati come iniettori di spin in dispositivi per applicazioni in spintronica, l'elettronica che considera elemento attivo per l'informazione non solo la carica elettrica ma anche lo spin dei portatori. Un tipico esempio di dispositivo spintronico è la valvola di spin (un dispositivo costituito da due film ferromagnetici metallici separati da uno strato conduttore o isolante) il cui stato resistivo dipende dall'orientazione relativa dei vettori magnetizzazione (parallela o antiparallela) degli strati ferromagnetici. E’ quindi di fondamentale importanza conoscere i meccanismi di magnetizzazione dei film che fungono da iniettori di spin. Questa indagine è stata effettuata misurando cicli di isteresi magnetica grazie ad un magnetometro MOKE (magneto-optical Kerr effect). Le misure di campo coercitivo e della magnetizzazione di rimanenza al variare dell'orientazione del campo rispetto al campione, permettono di identificare l'anisotropia, cioè gli assi di facile e difficile magnetizzazione. I risultati delle misure indicano una diversa anisotropia in funzione dello spessore del film: anisotropia biassiale (cioè con due assi facili di magnetizzazione) per film spessi 40 nm e uniassiale (un asse facile) per film spessi 20 nm. L'anisotropia biassiale viene associata allo strain che il substrato cristallino induce nel piano del film, mentre l'origine dell'uniassialità trova la giustificazione più probabile nella morfologia del substrato, in particolare nella presenza di terrazzamenti che potrebbero indurre una step-induced anisotropy. Il contributo di questi fattori di anisotropia alla magnetizzazione è stato studiato anche in temperatura.

Fabrication of high-k dielectric thin films for spintronics

Lo scopo di questa tesi è la fabbricazione di ossidi complessi aventi struttura perovskitica, per mezzo della tecnica Channel Spark Ablation (CSA). Più precisamente sono stati depositati film sottili di manganite (LSMO), SrTiO3 (STO) e NdGaO3 (NGO). Inoltre nel laboratorio ospite è stata effettuata la caratterizzazione elettrica e dielettrica (spettroscopia di impedenza), mentre per l'analisi strutturale e chimica ci si è avvalsi di collaborazioni. Sono stati fabbricati dispositivi LSMO/STO/Co e se ne è studiato il comportamento magnetoresistivo e la bistabilità elettrica a seconda del carattere epitassiale od amorfo dell'STO. I risultati più promettenti sono stati ottenuti con STO amorfo. Sono stati costruiti diversi set di condensatori nella configurazione Metallo/Isolante/Semiconduttore (MIS), con M=Au, I=STO o NGO ed S=Nb:STO, allo scopo di indagare la dipendenza delle proprietà dielettriche ed isolanti dai parametri di crescita. In particolare ci si è concentrati sulla temperatura di deposizione e, nel caso dei film di STO, anche sulla dipendenza della costante dielettrica dallo spessore del film. Come ci si aspettava, la costante dielettrica relativa dei film di STO (65 per un film spesso 40 nm e 175 per uno di 170 nm) si è rivelata maggiore di quella dei film di NGO per i quali abbiamo ottenuto un valore di 20, che coincide con il valore del bulk. Nonostante l'elevata capacità per unità di area ottenibile con l'STO, la costante dielettrica di questo materiale risulta fortemente dipendente dallo spessore del film. Un ulteriore aspetto critico relativo all'STO è dato dal livello di ossidazione del film: le vacanze di ossigeno, infatti, possono ridurre la resistività dell'STO (nominalmente molto elevata), ed aumentarne la corrente di perdita. Al contrario l'NGO è meno sensibile ai processi tecnologici e, allo stesso tempo, ha un valore di costante dielettrica più alto rispetto ad un tipico dielettrico come l'ossido di silicio.

PMMA-CNT matrices for vacuum electronic, biosensing and energy applications

Carbon nanotubes (CNTs) are interesting materials with extraordinary properties for various applications. Here, vertically-aligned multiwalled CNTs (VA-MWCNTs) are grown by our dual radio frequency plasma enhanced chemical vapor deposition (PECVD). After optimizing the synthesis processes, these VA-MWCNTs were fabricated in to a series of devices for applications in vacuum electronics, glucose biosensors, glucose biofuel cells, and supercapacitors In particular, we have created the so-called PMMA-CNT matrices (opened-tip CNTs embedded in poly-methyl methacrylate) that are promising components in a novel energy sensing, generation and storage (SGS) system that integrate glucose biosensors, biofuel cells, and supercapacitors. The content of this thesis work is described as follows: 1. We have first optimized the synthesis of VA-MWCNTs by our PECVD technique. The effects of CH4 flow rate and growth duration on the lengths of these CNTs were studied. 2. We have characterized these VA-MWCNTs for electron field emission. We noticed that as grown CNTs suffers from high emission threshold, poor emission density and poor long-term stability. We attempted a series of experiments to understand ways to overcome these problems. First, we decrease the screening effects on VA-MWCNTs by creating arrays of self-assembled CNT bundles that are catalyst-free and opened tips. These bundles are found to enhance the field emission stability and emission density. Subsequently, we have created PMMA-CNT matrices that are excellent electron field emitters with an emission threshold field of more than two-fold lower than that of the as-grown sample. Furthermore, no significant emission degradation was observed after a continuous emission test of 40 hours (versus much shorter tests in reported literatures). Based on the new understanding we learnt from the PMMA-CNT matrices, we further created PMMA-STO-CNT matrices by embedding opened-tip VA-MWCNTs that are coated with strontium titanate (SrTiO3) with PMMA. We found that the PMMA-STO-CNT matrices have all the desired properties of the PMMA-CNT matrices. Furthermore, PMMA-STO-CNT matrices offer much lower emission threshold field, about five-fold lower than that of as grown VA-MWCNTs. The new understandings we obtained are important for practical application of VA-MWCNTs in field emission devices. 3. Subsequently, we have functionalized PMMA-CNT matrices for glucose biosensing. Our biosensor was developed by immobilized glucose oxidase (GOχ) on the opened-tip CNTs exposed on the matrices. The durability, stability and sensitivity of the biosensor were studied. In order to understand the performance of miniaturized glucose biosensors, we have then investigated the effect of working electrode area on the sensitivity and current level of our biosensors. 4. Next, functionalized PMMA-CNT matrices were utilized for energy generation and storage. We found that PMMA-CNT matrices are promising component in glucose/O2 biofuel cells (BFCs) for energy generation. The construction of these BFCs and the effect of the electrode area on the power density of these BFCs were investigated. Then, we have attempted to use PMMA-CNT matrices as supercapacitors for energy storage devices. The performance of these supercapacitors and ways to enhance their performance are discussed. 5. Finally, we further evaluated the concept of energy SGS system that integrated glucose biosensors, biofuel cells, and supercapacitors. This SGS system may be implantable to monitor and control the blood glucose level in our body.

Competition and cooperation between antiferrodistortive and ferroelectric instabilities in the model perovskite SrTiO₃

We use density functional theory to explore the interplay between octahedral rotations and ferroelectricity in the model compound SrTiO3. We find that over the experimentally relevant range octahedral rotations suppress ferroelectricity as is generally assumed in the literature. Somewhat surprisingly, we observe that at larger angles the previously weakened ferroelectric instability strengthens significantly. By analyzing geometry changes, energetics, force constants and charges, we explain the mechanisms behind this transition from competition to cooperation with increasing octahedral rotation angle.

Polaronic metal state at the LaAlO₃/SrTiO₃ interface

Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 that hosts a two-dimensional electron system. Apart from the mobile charge carriers, this system exhibits a range of intriguing properties such as field effect, superconductivity and ferromagnetism, whose fundamental origins are still debated. Here we use soft-X-ray angle-resolved photoelectron spectroscopy to penetrate through the LaAlO3 overlayer and access charge carriers at the buried interface. The experimental spectral function directly identifies the interface charge carriers as large polarons, emerging from coupling of charge and lattice degrees of freedom, and involving two phonons of different energy and thermal activity. This phenomenon fundamentally limits the carrier mobility and explains its puzzling drop at high temperatures.

Atomic vapor deposition of bismuth titanate thin films

c-axis oriented ferroelectric bismuth titanate (Bi4Ti 3O12) thin films were grown on (001) strontium titanate (SrTiO3) substrates by an atomic vapor deposition technique. The ferroelectric properties of the thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data and transmission electron microscopy analysis demonstrated the presence of out-of-phase boundaries (OPBs). It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films. Piezo-responses of the thin films were measured by piezo-force microscopy. It is found that the in-plane piezoresponse is stronger than the out-of-plane response, due to the strong c-axis orientation of the films.

Room temperature electromechanical and magnetic investigations of ferroelectric Aurivillius phase Bi5Ti3(FexMn1−x)O15 (x = 1 and 0.7) chemical solution deposited thin films

Aurivillius phase thin films of Bi5Ti3(FexMn1−x)O15 with x = 1 (Bi5Ti3FeO15) and 0.7 (Bi5Ti3Fe0.7Mn0.3O15) on SiO2-Si(100) and Pt/Ti/SiO2-Si substrates were fabricated by chemical solution deposition. The method was optimized in order to suppress formation of pyrochlore phase Bi2Ti2O7 and improve crystallinity. The structuralproperties of the films were examined by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Optimum crystallinity and pyrochlore phase suppression was achieved by the addition of 15 to 25 mol. % excess bismuth to the sols. Based on this study, 17.5 mol. % excess bismuth was used in the preparation of Bi2Ti2O7-free films of Bi5Ti3FeO15 on SrTiO3(100) and NdGaO3(001) substrates, confirming the suppression of pyrochlore phase using this excess of bismuth. Thirty percent of the Fe3+ ions in Bi5Ti3FeO15 was substituted with Mn3+ ions to form Bi2Ti2O7-free thin films of Bi5Ti3Fe0.7Mn0.3O15 on Pt/Ti/SiO2-Si, SiO2-Si(100), SrTiO3(100), and NdGaO3(001) substrates. Bi5Ti3FeO15 and Bi5Ti3Fe0.7Mn0.3O15thin films on Pt/Ti/SiO2-Si and SiO2-Si(100) substrates were achieved with a higher degree of a-axis orientation compared with the films on SrTiO3(100) and NdGaO3(001) substrates. Room temperature electromechanical and magnetic properties of the thin films were investigated in order to assess the potential of these materials for piezoelectric,ferroelectric, and multiferroic applications. Vertical piezoresponse force microscopy measurements of the films demonstrate that Bi5Ti3FeO15 and Bi5Ti3Fe0.7Mn0.3O15thin films are piezoelectric at room temperature. Room temperature switching spectroscopy-piezoresponse force microscopy measurements in the presence and absence of an applied bias demonstrate local ferroelectric switching behaviour (180°) in the films. Superconducting quantum interference device magnetometry measurements do not show any room temperature ferromagnetic hysteresis down to an upper detection limit of 2.53 × 10−3 emu; and it is concluded, therefore, that such films are not mutiferroic at room temperature. Piezoresponse force microscopy lithography images of Bi5Ti3Fe0.7Mn0.3O15thin films are presented.

Functional alkali tantalate 2D structures for microelectronics and related applications

Alkali tantalates and niobates, including K(Ta / Nb)O3, Li(Ta / Nb)O3 and Na(Ta / Nb)O3, are a very promising ferroic family of lead-free compounds with perovskite-like structures. Their versatile properties make them potentially interesting for current and future application in microelectronics, photocatalysis, energy and biomedics. Among them potassium tantalate, KTaO3 (KTO), has been raising interest as an alternative for the well-known strontium titanate, SrTiO3 (STO). KTO is a perovskite oxide with a quantum paraelectric behaviour when electrically stimulated and a highly polarizable lattice, giving opportunity to tailor its properties via external or internal stimuli. However problems related with the fabrication of either bulk or 2D nanostructures makes KTO not yet a viable alternative to STO. Within this context and to contribute scientifically to the leverage tantalate based compounds applications, the main goals of this thesis are: i) to produce and characterise thin films of alkali tantalates by chemical solution deposition on rigid Si based substrates, at reduced temperatures to be compatible with Si technology, ii) to fulfil scientific knowledge gaps in these relevant functional materials related to their energetics and ii) to exploit alternative applications for alkali tantalates, as photocatalysis. In what concerns the synthesis attention was given to the understanding of the phase formation in potassium tantalate synthesized via distinct routes, to control the crystallization of desired perovskite structure and to avoid low temperature pyrochlore or K-deficient phases. The phase formation process in alkali tantalates is far from being deeply analysed, as in the case of Pb-containing perovskites, therefore the work was initially focused on the process-phase relationship to identify the driving forces responsible to regulate the synthesis. Comparison of phase formation paths in conventional solid-state reaction and sol-gel method was conducted. The structural analyses revealed that intermediate pyrochlore K2Ta2O6 structure is not formed at any stage of the reaction using conventional solid-state reaction. On the other hand in the solution based processes, as alkoxide-based route, the crystallization of the perovskite occurs through the intermediate pyrochlore phase; at low temperatures pyrochlore is dominant and it is transformed to perovskite at >800 °C. The kinetic analysis carried out by using Johnson-MehlAvrami-Kolmogorow model and quantitative X-ray diffraction (XRD) demonstrated that in sol-gel derived powders the crystallization occurs in two stages: i) at early stage of the reaction dominated by primary nucleation, the mechanism is phase-boundary controlled, and ii) at the second stage the low value of Avrami exponent, n ~ 0.3, does not follow any reported category, thus not permitting an easy identification of the mechanism. Then, in collaboration with Prof. Alexandra Navrotsky group from the University of California at Davis (USA), thermodynamic studies were conducted, using high temperature oxide melt solution calorimetry. The enthalpies of formation of three structures: pyrochlore, perovskite and tetragonal tungsten bronze K6Ta10.8O30 (TTB) were calculated. The enthalpies of formation from corresponding oxides, ∆Hfox, for KTaO3, KTa2.2O6 and K6Ta10.8O30 are -203.63 ± 2.84 kJ/mol, - 358.02 ± 3.74 kJ/mol, and -1252.34 ± 10.10 kJ/mol, respectively, whereas from elements, ∆Hfel, for KTaO3, KTa2.2O6 and K6Ta10.8O30 are -1408.96 ± 3.73 kJ/mol, -2790.82 ± 6.06 kJ/mol, and -13393.04 ± 31.15 kJ/mol, respectively. The possible decomposition reactions of K-deficient KTa2.2O6 pyrochlore to KTaO3 perovskite and Ta2O5 (reaction 1) or to TTB K6Ta10.8O30 and Ta2O5 (reaction 2) were proposed, and the enthalpies were calculated to be 308.79 ± 4.41 kJ/mol and 895.79 ± 8.64 kJ/mol for reaction 1 and reaction 2, respectively. The reactions are strongly endothermic, indicating that these decompositions are energetically unfavourable, since it is unlikely that any entropy term could override such a large positive enthalpy. The energetic studies prove that pyrochlore is energetically more stable phase than perovskite at low temperature. Thus, the local order of the amorphous precipitates drives the crystallization into the most favourable structure that is the pyrochlore one with similar local organization; the distance between nearest neighbours in the amorphous or short-range ordered phase is very close to that in pyrochlore. Taking into account the stoichiometric deviation in KTO system, the selection of the most appropriate fabrication / deposition technique in thin films technology is a key issue, especially concerning complex ferroelectric oxides. Chemical solution deposition has been widely reported as a processing method to growth KTO thin films, but classical alkoxide route allows to crystallize perovskite phase at temperatures >800 °C, while the temperature endurance of platinized Si wafers is ~700 °C. Therefore, alternative diol-based routes, with distinct potassium carboxylate precursors, was developed aiming to stabilize the precursor solution, to avoid using toxic solvents and to decrease the crystallization temperature of the perovskite phase. Studies on powders revealed that in the case of KTOac (solution based on potassium acetate), a mixture of perovskite and pyrochlore phases is detected at temperature as low as 450 °C, and gradual transformation into monophasic perovskite structure occurs as temperature increases up to 750 °C, however the desired monophasic KTaO3 perovskite phase is not achieved. In the case of KTOacac (solution with potassium acetylacetonate), a broad peak is detected at temperatures <650 °C, characteristic of amorphous structures, while at higher temperatures diffraction lines from pyrochlore and perovskite phases are visible and a monophasic perovskite KTaO3 is formed at >700 °C. Infrared analysis indicated that the differences are due to a strong deformation of the carbonate-based structures upon heating. A series of thin films of alkali tantalates were spin-coated onto Si-based substrates using diol-based routes. Interestingly, monophasic perovskite KTaO3 films deposited using KTOacac solution were obtained at temperature as low as 650 °C; films were annealed in rapid thermal furnace in oxygen atmosphere for 5 min with heating rate 30 °C/sec. Other compositions of the tantalum based system as LiTaO3 (LTO) and NaTaO3 (NTO), were successfully derived as well, onto Si substrates at 650 °C as well. The ferroelectric character of LTO at room temperature was proved. Some of dielectric properties of KTO could not be measured in parallel capacitor configuration due to either substrate-film or filmelectrode interfaces. Thus, further studies have to be conducted to overcome this issue. Application-oriented studies have also been conducted; two case studies: i) photocatalytic activity of alkali tantalates and niobates for decomposition of pollutant, and ii) bioactivity of alkali tantalate ferroelectric films as functional coatings for bone regeneration. Much attention has been recently paid to develop new type of photocatalytic materials, and tantalum and niobium oxide based compositions have demonstrated to be active photocatalysts for water splitting due to high potential of the conduction bands. Thus, various powders of alkali tantalates and niobates families were tested as catalysts for methylene blue degradation. Results showed promising activities for some of the tested compounds, and KNbO3 is the most active among them, reaching over 50 % degradation of the dye after 7 h under UVA exposure. However further modifications of powders can improve the performance. In the context of bone regeneration, it is important to have platforms that with appropriate stimuli can support the attachment and direct the growth, proliferation and differentiation of the cells. In lieu of this here we exploited an alternative strategy for bone implants or repairs, based on charged mediating signals for bone regeneration. This strategy includes coating metallic 316L-type stainless steel (316L-SST) substrates with charged, functionalized via electrical charging or UV-light irradiation, ferroelectric LiTaO3 layers. It was demonstrated that the formation of surface calcium phosphates and protein adsorption is considerably enhanced for 316L-SST functionalized ferroelectric coatings. Our approach can be viewed as a set of guidelines for the development of platforms electrically functionalized that can stimulate tissue regeneration promoting direct integration of the implant in the host tissue by bone ingrowth and, hence contributing ultimately to reduce implant failure.

Atomic resolution studies of oxide superlattices and ultrathin films

The ability to grow ultrathin films layer-by-layer with well-defined epitaxial relationships has allowed research groups worldwide to grow a range of artificial films and superlattices, first for semiconductors, and now with oxides. In the oxides thin film research community, there have been concerted efforts recently to develop a number of epitaxial oxide systems grown on single crystal oxide substrates that display a wide variety of novel interfacial functionality, such as enhanced ferromagnetic ordering, increased charge carrier density, increased optical absorption, etc, at interfaces. The magnitude of these novel properties is dependent upon the structure of thin films, especially interface sharpness, intermixing, defects, and strain, layering sequence in the case of superlattices and the density of interfaces relative to the film thicknesses. To understand the relationship between the interfacial thin film oxide atomic structure and its properties, atomic scale characterization is required. Transmission electron microscopy (TEM) offers the ability to study interfaces of films at high resolution. Scanning transmission electron microscopy (STEM) allows for real space imaging of materials with directly interpretable atomic number contrast. Electron energy loss spectroscopy (EELS), together with STEM, can probe the local chemical composition as well as local electronic states of transition metals and oxygen. Both techniques have been significantly improved by aberration correctors, which reduce the probe size to 1 Å, or less. Aberration correctors have thus made it possible to resolve individual atomic columns, and possibly probe the electronic structure at atomic scales. Separately, using electron probe forming lenses, structural information such as the crystal structure, strain, lattice mismatches, and superlattice ordering can be measured by nanoarea electron diffraction (NED). The combination of STEM, EELS, and NED techniques allows us to gain a fundamental understanding of the properties of oxide superlattices and ultrathin films and their relationship with the corresponding atomic and electronic structure. In this dissertation, I use the aforementioned electron microscopy techniques to investigate several oxide superlattice and ultrathin film systems. The major findings are summarized below. These results were obtained with stringent specimen preparation methods that I developed for high resolution studies, which are described in Chapter 2. The essential materials background and description of electron microscopy techniques are given in Chapter 1 and 2. In a LaMnO3-SrMnO3 superlattice, we demonstrate the interface of LaMnO3-SrMnO3 is sharper than the SrMnO3-LaMnO3 interface. Extra spectral weights in EELS are confined to the sharp interface, whereas at the rougher interface, the extra states are either not present or are not confined to the interface. Both the structural and electronic asymmetries correspond to asymmetric magnetic ordering at low temperature. In a short period LaMnO3-SrTiO3 superlattice for optical applications, we discovered a modified band structure in SrTiO3 ultrathin films relative to thick films and a SrTiO3 substrate, due to charge leakage from LaMnO3 in SrTiO3. This was measured by chemical shifts of the Ti L and O K edges using atomic scale EELS. The interfacial sharpness of LaAlO3 films grown on SrTiO3 was investigated by the STEM/EELS technique together with electron diffraction. This interface, when prepared under specific conditions, is conductive with high carrier mobility. Several suggestions for the conductive interface have been proposed, including a polar catastrophe model, where a large built-in electric field in LaAlO3 films results in electron charge transfer into the SrTiO3 substrate. Other suggested possibilities include oxygen vacancies at the interface and/or oxygen vacancies in the substrate. The abruptness of the interface as well as extent of intermixing has not been thoroughly investigated at high resolution, even though this can strongly influence the electrical transport properties. We found clear evidence for cation intermixing through the LaAlO3-SrTiO3 interface with high spatial resolution EELS and STEM, which contributes to the conduction at the interface. We also found structural defects, such as misfit dislocations, which leads to increased intermixing over coherent interfaces.

Processing and characterization of srTiO₃-TiO₂ nanoparticle-nanotube heterostructures on titanium for biomedical applications

Surface properties such as physicochemical characteristics and topographical parameters of biomaterials, essentially determining the interaction between the biological cells and the biomaterial, are important considerations in the design of implant materials. In this study, a layer of SrTiO3-TiO2 nanoparticle-nanotube heterostructures on titanium has been fabricated via anodization combined with a hydrothermal process. Titanium was anodized to create a layer of titania (TiO2) nanotubes (TNTs), which was then decorated with a layer of SrTiO3 nanoparticles via hydrothermal processing. SrTiO3-TiO2 heterostructures with high and low volume fraction of SrTiO3 nanoparticle (denoted by 6.3-Sr/TNTs and 1.4-Sr/TNTs) were achieved by using a hydrothermal processing time of 12 and 3 h, respectively. The in vitro biocompatibility of the SrTiO3-TiO2 heterostructures was assessed by using osteoblast cells (SaOS2). Our results indicated that the SrTiO3-TiO2 heterostructures with different volume fractions of SrTiO3 nanoparticles exhibited different Sr ion release in cell culture media and different surface energies. An appropriate volume fraction of SrTiO3 in the heterostructures stimulated the secretion of cell filopodia, leading to enhanced biocompatibility in terms of cell attachment, anchoring, and proliferation on the heterostructure surface.

Procesos hopping a través del modelo difusional en materiales nanocristalinos usados para aplicaciones fotovoltaicas

Se presentan los modelos de hopping de rango variable (variable range hopping; VRH), vecinos cercanos (nearest neighbor hopping; NNH) y barreras de potencial presentes en las fronteras de grano; como mecanismos de transporte eléctrico predominantes en los materiales semiconductores para aplicaciones fotovoltaicas. Las medidas de conductividad a oscuras en función de temperatura fueron realizadas para región de bajas temperaturas entre 120 y 400 K con Si y compuestos Cu3BiS2 y Cu2ZnSnSe4. Siguiendo la teoría de percolación, se obtuvieron parámetros hopping y la densidad de estados cerca del nivel de Fermi, N(EF), para todas las muestras. A partir de los planteamientos dados por Mott para VRH, se presentó el modelo difusional, que permitió establecer la relación entre la conductividad y la densidad de estados de defecto o estados localizados en el gap del material. El análisis comparativo entre modelos, evidenció, que es posible obtener mejora hasta de un orden de magnitud en valores para cada uno de los parámetros hopping que caracterizan el material.