Drude's model calculation rule on electrical transport in Sb-doped SnO2 thin films, deposited via sol-gel

The evaluation of free carrier concentration based on Drude's theory can be performed by the use of optical transmittance in the range 800-2000 nm (near infrared) for Sb-doped SnO2 thin films. In this article, we estimate the free carrier concentration for these films, which are deposited via sol-gel dip-coating. At approximately 900 mn, there is a separation among transmittance curves of doped and undoped samples. The plasma resonance phenomena approach leads to free carrier concentration of about 5 x 1020 cm(-3). The increase in the Sb concentration increases the film conductivity; however, the magnitude of measured resistivity is still very high. The only way to combine such a high free carrier concentration with a rather low conductivity is to have a very low mobility. It becomes possible when the crystallite dimensions are taken into account. We obtain grains with 5 nm of average size by estimating the grain size from X-ray diffraction data, and by using line broadening in the diffraction pattern. The low conductivity is due to very intense scattering at the grain boundary, which is created by the presence of a large amount of nanoscopic crystallites. Such a result is in accordance with X-ray photoemission spectroscopy data that pointed to Sb incorporation proportional to the free electron concentration, evaluated according to Drude's model. (c) 2006 Elsevier Ltd. All rights reserved.

Preparation and properties of colloidal particles. Silica on yttrium iron garnet

Various properties of particles can be altered by coating them with a layer of different chemical composition. Yttrium iron garnet (YIG) particles has been coated with silica for control of their sintering, corrosion resistance, and stabilization of magnetic properties. This silica cover was obtained by hydrolysis of tetraethylorthosilicate (TEOS) in 2-propanol. This material was characterized by transmission (TEM) electron microscopy, (XEDS) X-ray energy-dispersive spectrometry, (XPS) X-ray photoemission spectroscopy and (VSM) vibrating sample magnetometry. YIG was heterocoagulated by silica as indicated by TEM micrographies. XPS measurements indicated that only binding energy for silicon and oxygen was found on the silica shell, which confirms that the YIG was covered. The values of the saturation magnetization differ from the heterocoagulated system to well-crystallized YIG.

Chromium-containing silica materials

Chromium-containing silica samples were obtained from soluble sodium silicate solutions in the presence of different chromium nitrate concentrations. Precipitation was carried out in ethanolic media. Gel precipitate was dried by liophylization and samples measured by transmission electron microscopy (TEM), X-ray energy-dispersive spectrometer, X-ray mapping, X-ray photoemission spectroscopy (XPS), and particle size analysis. Spherical chromium containing silica particles with 3.5% and 4.8% (at.%) of chromium were obtained. Particle size analysis results showed that with increased addition of chromium in sodium silicate solutions produces agglomerates whose sizes range from 1 to 0.2 μm. Chromium mapping and XPS results show that chromium oxide is preferentially segregated on particle surfaces. Chromium oxide was detected on particle surface with a binding energy of 576.77 ± 0.05 eV as obtained from XPS analysis. During the hydrolysis and condensation processes chromium oxide precipitates on the silica surface and it affects the silica chain size. © 2000 Elsevier Science B.V. All rights reserved.

Protected magnetic particles: Silica on yttrium iron garnet

The formation of silica on core yttrium iron garnet presents a variety of different applications as corrosion resistance and stabilization of magnetic properties. Well-defined magnetic particles were prepared by heterocoagulating silica on yttrium iron garnet to protect the core. Yttrium iron garnet was obtained using a homogeneous nucleation process by controlling the chemical routes from cation hydrolysis in acid medium. The heterocoagulation was induced by tetraethyl orthosilicate hydrolysis in appropriate yttrium iron garnet dispersion medium. The presence of silica on yttrium iron garnet was characterized by vibrating sample magnetometry, X-ray photoemission spectroscopy, transmission electron microscopy, small area electron diffraction and differential thermal analysis. © 2001 Elsevier Science B.V. All rights reserved.

Estudo de reações de óxido-redução em vidros fosfato com altas concentrações de óxido de tungstênio

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Partículas magnéticas: ferrita de ítrio 'Y IND. 3''FE IND. 5''O IND. 12' (YIG) recoberta com sílica ('SIO IND. 2')

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Spin polarised Heusler compounds

In der vorliegenden Dissertation dient ein einfaches Konzept zur Systematisierung der Suche nach neuen Materialien mit hoher Spinpolarisation. Dieses Konzept basiert auf zwei semi-empirischen Modellen. Zum einen kann die Slater-Pauling Regel zur Abschätzung magnetischer Momente verwendet werden. Dieses Modell wird dabei durch Rechnungen zur elektronischen Struktur unterstützt. Das zweites Modell kann insbesondere für die Co2YZ Heusler Verbindungen beim Vergleich ihrer magnetischen Eigenschaften gefunden werden. Für diese Verbindungen ergibt sich eine scheinbare lineare Abhängigkeit der Curie-Temperatur beim Auftragen als Funktion des magnetischen Momentes. Angeregt durch diese Modelle wurde die Heusler Verbindung Co2FeSi nochmals detailliert im Hinblick auf ihre geometrische und magnetische Struktur hin untersucht. Als Methoden dienten dabei die Pulver-Röntgenbeugung, die EXAFS Spektroskopie, Röntgen Absorptions- and Mößbauer Spektroskopie sowie Hoch- und Tieftemperatur Magnetometrie, XMCD and DSC. Die Messungen zeigten, dass es sich bei Co2FeSi um das Material mit dem höchsten magnetischen Moment (6 B) und der höchsten Curie Temperatur (1100 K) sowohl in der Klasse der Heusler Verbindungen als auch in der Klasse der halbmetallischen Ferromagnete handelt. Zusätzlich werden alle experimentellen Ergebnisse durch detaillierte Rechnungen zur elektronischen Struktur unterstützt. Die gleichen Konzepte wurden verwendet, um die Eigenschaften der Heusler Verbindung Co2Cr1-xFexAl vorherzusagen. Die elektronische Struktur und die spektroskopischen Eigenschaften wurden mit der voll-relativistischen Korringa-Kohn-Rostocker Methode berechnet, unter Verwendung kohärenter Potentialnäherungen um der zufälligen Verteilung von Cr und Fe Atomen sowie zufälliger Unordnung Rechnung zu tragen. Magnetische Effekte wurden durch die Verwendung Spin-abhängiger Potentiale im Rahmen der lokalen Spin-Dichte-Näherung mit eingeschlossen. Die strukturellen und chemischen Eigenschaften der quaternären Heusler Verbindung Co2Cr1-xFexAl wurden an Pulver und Bulkproben gemessen. Die Fernordnung wurde mit der Pulver Röntgenbeugung und Neutronenbeugung untersucht, während die Nahordnung mit der EXAFS Spektroskopie aufgeklärt wurde. Die magnetische Struktur von Pulver und Bulkproben wurde mitttels 57Fe-Mößbauer Spektroskopie gemessen. Die chemische Zusammensetzung wurde durch XPS analysiert. Die Ergebnisse dieser Methoden wurden verglichen, um eine Einsicht in die Unterschiede zwischen Oberflächen und Volumeneigenschaften zu erlangen sowie in das Auftreten von Fehlordnung in solchen Verbindungen. Zusätzlich wurde XMCD an den L3,2 Kanten von Co, Fe, and Cr gemessen, um die elementspezifischen magnetischen Momente zu bestimmen. Rechnungen und Messungen zeigen dabei eine Zunahme des magnetischen Momentes bei steigendem Fe-Anteil. Resonante Photoemission mit weicher Röntgenstrahlung sowie Hochenergie Photoemission mit harter Röntgenstrahlung wurden verwendet, um die Zustandsdichte der besetzten Zustände in Co2Cr0.6Fe0.4Al zu untersuchen. Diese Arbeit stellt außerdem eine weitere, neue Verbindung aus der Klasse der Heusler Verbindungen vor. Co2CrIn ist L21 geordnet, wie Messungen mittels Pulver Röntgenbeugung zeigen. Die magnetischen Eigenschaften wurden mit magnetometrisch bestimmt. Co2CrIn ist weichmagnetisch mit einer Sättigungsmagnetisierung von 1.2B bei 5 K. Im Gegensatz zu den bereits oben erwähnten Co2YZ Heusler Verbindungen ist Co2CrIn kein halbmetallischer Ferromagnet. Im Rahmen dieser Arbeit wird weiterhin eine Regel zur Vorhersage von halbmetallischen komplett kompensierten Ferrimagneten in der Klasse der Heusler Verbindungen vorgestellt. Dieses Konzept resultiert aus der Kombination der Slater-Pauling Regel mit der Kübler-Regel. Die Kübler Regel besagt, dass Mn auf der Y Position zu einem hoch lokalisierten magnetischen Moment tendiert. Unter Verwendung dieses neuen Konzeptes werden für einige Kandidaten in der Klasse der Heusler Verbindungen die Eigenschaft des halbmetallischen komplett kompensierten Ferrimagnetismus vorhergesagt. Die Anwendung dieses Konzeptes wird anhand von Rechnungen zur elektronischen Struktur bestätigt.

Analysis of the surface state of epi-ready Ge wafers

The surface state of Ge epi-ready wafers (such as those used on III-V multijunction solar cells) supplied by two different vendors has been studied using X-ray photoemission spectroscopy. Our experimental results show that the oxide layer on the wafer surface is formed by GeO and GeO2. This oxide layer thickness differs among wafers coming from different suppliers. Besides, several contaminants appear on the wafer surfaces, carbon and probably chlorine being common to every wafer, irrespective of its origin. Wafers from one of the vendors show the presence of carbonates at their surfaces. On such wafers, traces of potassium seem to be present too.

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Molecular hydrogen strongly interacts with vicinal Ge(100) surfaces during preparation in a metal organic vapor phase epitaxy reactor. According to X-ray photoemission spectroscopy and Fourier-transform infrared spectroscopy results, we identify two characteristic reflection anisotropy (RA) spectra for H-free and monohydride-terminated vicinal Ge(100) surfaces. RAS allows in situ monitoring of the surface termination and enables spectroscopic hydrogen kinetic desorption studies on the Ge(100) surface. Comparison of evaluated values for the activation energy and the pre-exponential factor of H desorption evaluated at different photon energies reflects that H unevenly affects the shape of the RA spectrum.

Valence band electronic structure of Nd1-xYxMnO3 using X-ray absorption, photoemission and GGA plus U calculations

The electronic structures of Nd1-xYxMnO3 (x=0-0.5) were studied using X-ray absorption near-edge structure (XANES) at the Mn L-3,L-2- and O K-edge along with valence-band photoemission spectroscopy (VB-PES). The systematic increase in white-line intensity of the Mn L-3,L-2-edge with doping, suggests a decrease in the occupancy of Mn 3d orbitals. The O K-edge XANES shows a depletion of unoccupied states above the Fermi energy. The changes in the O K-edge spectra due to doping reflects an increase in the Jahn-Teller distortion. The VB-PES shows broadening of the features associated with Mn 3d and O 2p hybridized states and the shift of these features to a slightly higher binding energy in agreement with our GGA + U calculations. The system shows a net shift of the occupied and unoccupied states away from the Fermi energy with doping. The shift in theoretical site-projected density of states of x=0.5 composition with respect to x=0 suggest a subtle change from a charge transfer to Mott-Hubbard type insulator. (C) 2013 Elsevier B.V. All rights reserved.

Band structure of Heusler compounds studied by photoemission and tunneling spectroscopy

Heusler compounds are key materials for spintronic applications. They have attracted a lot of interest due to their half-metallic properties predicted by band structure calculations.rnThe aim of this work is to evaluate experimentally the validity of the predictions of half metallicity by band structure calculations for two specific Heusler compounds, Co2FeAl0.3Si0.7 and Co2MnGa. Two different spectroscopy methods for the analysis of the electronic properties were used: Angular Resolved Ultra-violet Photoemission Spectroscopy (ARUPS) and Tunneling Spectroscopy.rnHeusler compounds are prepared as thin films by RF-sputtering in an ultra-high vacuum system. rnFor the characterization of the samples, bulk and surface crystallographic and magnetic properties of Co2FeAl0.3Si0.7 and Co2MnGa are studied. X-ray and electron diffraction reveal a bulk and surface crossover between two different types of sublattice order (from B2 to L21) with increasing annealing temperature. X-ray magnetic circular dichroism results show that the magnetic properties in the surface and bulk are identical, although the magnetic moments obtained are 5% below from the theoretically predicted.rnBy ARUPS evidence for the validity of the predicted total bulk density of states (DOS) was demonstrated for both Heusler compounds. Additional ARUPS intensity contributions close to the Fermi energy indicates the presence of a specific surface DOS. Moreover, it is demonstrated that the crystallographic order, controlled by annealing, plays an important role on brodening effects of DOS features. Improving order resulted in better defined ARUPS features.rnTunneling magnetoresistance measurements of Co2FeAl0.3Si0.7 and Co2MnGa based MTJ’s result in a Co2FeAl0.3Si0.7 spin polarization of 44%, which is the highest experimentally obtained value for this compound, although it is lower than the 100% predicted. For Co2MnGa no high TMR was achieved.rnUnpolarized tunneling spectroscopy reveals contribution of interface states close to the Fermi energy. Additionally magnon excitations due to magnetic impurities at the interface are observed. Such contributions can be the reason of a reduced TMR compared to the theoretical predictions. Nevertheless, for energies close to the Fermi energy and for Co2MnGa, the validity of the band structure calculations is demonstrated with this technique as well.

Stability and photoemission characteristics for GaAs photocathodes in a demountable vacuum system

The stability and photoemission characteristics for reflection-mode GaAs photocathodes in a demountable vacuum system have been investigated by using spectral response and x-ray photoelectron spectroscopy measurements at room temperature. We find that the shape of the spectral response curve for the cathode changes with time in the vacuum system, but after applying fresh cesium to the degraded cathode, the spectral response can almost be restored. The change and restoration of curve shape are mainly attributed to the evolution of the surface barrier. We illustrate the evolution and analyze the influence of the barrier on the spectral response of the cathode. (C) 2008 American Institute of Physics.

Structural, magnetic properties and photoemission study of Ni-doped ZnO

Nickel-doped ZnO (Zn1-xNixO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni hits it chemical valence of 2 +. According to the . We studied the electronic magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn0.86Ni0.14O. We studied the electronic structure of Zn0.86Ni0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at similar to 2 eV below the Fermi energy E-F, which is of Ni 3d origin. No emission was found at E-A, suggesting the insulating nature of the film. (c) 2005 Elsevier Ltd. All rights reserved.

Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation

The adsorption of K on the n-GaAs(I 0 0) surface was investigated by X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (SR-PES). The Ga3d and As3d core level was measured for clean and K adsorbed GaAs(I 0 0) surface. The adsorption of K induced chemical reaction between K and As, and the K-As reactant formed when the K coverage theta > I ML. The chemical reaction between K and Ga did not occur, but Ga atoms were exchanged by K atoms. From the data of band bending, the Schottky barrier is 0.70 eV. The Fermi-level pinning was not caused by defect levels. The probable reason is that the dangling bonds of surface Ga atoms were filled by the outer-shell electrons of K atoms, forming a half-filled surface state. The Fermi-level pinning was caused by this half-filled surface state. (c) 2004 Elsevier B.V. All rights reserved.

PHOTOEMISSION-STUDY ON THE SNO2/P A-SICX-H INTERFACE

Ultraviolet and X-ray photoemission spectroscopies (UPS and XPS) have been employed to SnO2 and its interface with P-type a-SiCx:H. The HeI valence band spectra of SnO2 show that the valence band maximum (VBM) shifts from 4.7 eV to 3.6 eV below the Fermi level (E(F)), and the valence band tail (VBT) extends up to the E(F), as a consequence of H-plasma treatments. The work function difference between SnO2 and P a-SiCx:H is found to decrease from 0.98 eV to 0.15 eV, owing to the increase of the work function of the treated SnO2. The reduction of SnO2 to metallic Sn is also observed by XPS profiling, and it is found that this leads to a wider interfacial region between the treated SnO2 and the successive growth of P a-SiCx:H.