Analysis of SEB and SEGR in super-junction MOSFETs

The electric field distribution in the super junction power MOSFET is analyzed using analytical modeling and numerical simulations in this paper. The single-event burn-out (SEB) and single-event gate rupture (SEGR) phenomena in this device are studied in detail. It is demonstrated that the super junction device is much less sensitive to SEB and SEGR compared to the standard power MOSFET. The physical mechanism is explained.

A path-following driver-vehicle model with neuromuscular dynamics, including measured and simulated responses to a step in steering angle overlay

An existing driver-vehicle model with neuromuscular dynamics is improved in the areas of cognitive delay, intrinsic muscle dynamics and alpha-gamma co-activation. The model is used to investigate the influence of steering torque feedback and neuromuscular dynamics on the vehicle response to lateral force disturbances. When steering torque feedback is present, it is found that the longitudinal position of the lateral disturbance has a significant influence on whether the drivers reflex response reinforces or attenuates the effect of the disturbance. The response to angle and torque overlay inputs to the steering system is also investigated. The presence of the steering torque feedback reduced the disturbing effect of torque overlay and angle overlay inputs. Reflex action reduced the disturbing effect of a torque overlay input, but increased the disturbing effect of an angle overlay input. Experiments on a driving simulator showed that measured handwheel angle response to an angle overlay input was consistent with the response predicted by the model with reflex action. However, there was significant intra-and inter-subject variability. The results highlight the significance of a drivers neuromuscular dynamics in determining the vehicle response to disturbances. © 2012 Copyright Taylor and Francis Group, LLC.

An Arbitrary Lagrangian Eulerian Method for Three-Phase Flows with Triple Junction Points

We present a moving mesh method suitable for solving two-dimensional and axisymmetric three-liquid flows with triple junction points. This method employs a body-fitted unstructured mesh where the interfaces between liquids are lines of the mesh system, and the triple junction points (if exist) are mesh nodes. To enhance the accuracy and the efficiency of the method, the mesh is constantly adapted to the evolution of the interfaces by refining and coarsening the mesh locally; dynamic boundary conditions on interfaces, in particular the triple points, are therefore incorporated naturally and accurately in a Finite- Element formulation. In order to allow pressure discontinuity across interfaces, double-values of pressure are necessary for interface nodes and triple-values of pressure on triple junction points. The resulting non-linear system of mass and momentum conservation is then solved by an Uzawa method, with the zero resultant condition on triple points reinforced at each time step. The method is used to investigate the rising of a liquid drop with an attached bubble in a lighter liquid.

A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors

Silicon Carbide Bipolar Junction Transistors require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200V/40A SiC BJT in a DC-DC boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 63 %. The total reduction of the driver consumption is 2816 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE.

A discretized proportional base driver for silicon carbide bipolar junction transistors

Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200-V/40-A SiC BJT in a dc-dc boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 60%. The total reduction of the driver consumption is 3459 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE.

Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

Theoretical design and performance of InxGa1-xN two-junction solar cells

The efficiencies of InxGa1-xN two-junction solar cells are calculated with various bandgap combinations of subcells under AM1.5 global, AM1.5 direct and AM0 spectra. The influence of top-cell thickness on efficiency has been studied and the performance of InxGa1-xN cells for the maximum light concentration of various spectra has been evaluated. Under one-sun irradiance, the optimum efficiency is 35.1% for the AM1.5 global spectrum, with a bandgap combination of top/bottom cells as 1.74 eV/1.15 eV. And the limiting efficiency is 40.9% for the highest light concentration of the AM1.5 global spectrum, with the top/bottom cell bandgap as 1.72 eV/1.12 eV.

Simulation of In0.65Ga0.35N single-junction solar cell

The performances of In0.65Ga0.35N single-junction solar cells with different structures, including various doping densities and thicknesses of each layer, have been simulated. It is found that the optimum efficiency of a In0.65Ga0.35N solar cell is 20.284% with 5 x 10(17) cm(-3) carrier concentration of the front and basic regions, a 130 nm thick p-layer and a 270 nm thick n-layer.