State-resolved gas-surface reactivity of methane in the symmetric C-H stretch vibration on Ni(100)

The state-resolved reactivity of CH4 in its totally symmetric C-H stretch vibration (�1) has been measured on a Ni(100) surface. Methane molecules were accelerated to kinetic energies of 49 and 63:5 kJ=mol in a molecular beam and vibrationally excited to �1 by stimulated Raman pumping before surface impact at normal incidence. The reactivity of the symmetric-stretch excited CH4 is about an order of magnitude higher than that of methane excited to the antisymmetric stretch (�3) reported by Juurlink et al. [Phys. Rev. Lett. 83, 868 (1999)] and is similar to that we have previously observed for the excitation of the first overtone (2�3). The difference between the state-resolved reactivity for �1 and �3 is consistent with predictions of a vibrationally adiabatic model of the methane reaction dynamics and indicates that statistical models cannot correctly describe the chemisorption of CH4 on nickel.

Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

In this work, we present a detailed study on the optical properties of two GaAs/Al(0.35)Ga(0.65)As coupled double quantum wells (CDQWs) with inter-well barriers of different thicknesses, by using photoluminescence (PL) spectroscopy. The two CDQWs were grown in a single sample, assuring very similar experimental conditions for measurements of both. The PL spectrum of each CDQW exhibits two recombination channels which can be accurately identified as the excitonic e(1)-hh(1) transitions originated from CDQWs of different effective dimensions. The PL spectra characteristics and the behavior of the emissions as a function of temperature and excitation power are interpreted in the scenario of the bimodal interface roughness model, taking into account the exciton migration between the two regions considered in this model and the difference in the potential fluctuation levels between those two regions. The details of the PL spectra behavior as a function of excitation power are explained in terms of the competition between the band gap renormalization (BGR) and the potential fluctuation effects. The results obtained for the two CDQWs, which have different degrees of potential fluctuation, are also compared and discussed. (C) 2009 Elsevier B.V. All rights reserved.

MAGNETIC RESONANT X-RAY DIFFRACTION APPLIED TO THE STUDY OF EuTe FILMS AND MULTILAYERS

In this work we use magnetic resonant x-ray diffraction to study the magnetic properties of a 1.5 mu m EuTe film and an EuTe/PbTe superlattice (SL). The samples were grown by molecular beam epitaxy on (111) oriented BaF(2) substrates. The measurements were made at the Eu L(2) absorption edge, taking profit of the resonant enhancement of more than two orders in the magnetically diffracted intensity. At resonance, high counting rates above 11000 cps were obtained for the 1.5 gm EuTe film, allowing to check for the type II antiferromagnetic order of EuTe. An equal population of the three possible in-plane magnetic domains was found. The EuTe/PbTe SL magnetic peak showed a satellite structure, indicating the presence of magnetic correlations among the 5 ML (monolayers) EuTe layers across the 15 ML PbTe non-magnetic spacers. The temperature dependence of the integrated intensities of the film and the SL yielded different Neel temperatures T(N). The lower T(N) for the SL is explained considering the higher influence of the surface atoms, with partial bonds lost.

On the preparation of clean tungsten single crystals

The cleaning procedure consists of two-step-flashing: (i) cycles of low power flashes T similar to 1200 K) at an oxygen partial pressure of P(o2) = 6 x 10(-8) mbar, to remove the carbon from the surface, and (ii) a single high power flash (T similar to 2200 K), to remove the oxide layer. The removal of carbon from the surface through the chemical reaction with oxygen during low power flash cycles is monitored by thermal desorption spectroscopy. The exposure to O(2) leads to the oxidation of the W surface. Using a high power flash, the volatile W-oxides and the atomic oxygen are desorbed, leaving a clean crystal surface at the end of procedure. The method may also be used for cleaning other refractory metals like Mo, Re and It. (C) 2009 Elsevier B.V. All rights reserved.

Genotype by environment interaction for 450-day weight of Nelore cattle analyzed by reaction norm models

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Synthesis of KNbO3 nanostructures by a microwave assisted hydrothermal method

One-dimensional nanostructures of KNbO3 have attracted a great interest in the scientific community, mainly because of their promising application as nanoelectromechanical systems (NEMS). However, the synthesis of KNbO3 structures becomes complex due to the natural tendency to form non-stoichiometric potassium niobates. In this context, we report on the crystallization of one-dimensional KNbO3 nanostructures through the reaction between Nb2O5 and KOH under microwave-assisted hydrothermal synthesis (M-H). The use of this synthesis method made possible a very fast synthesis of singlecrystalline powders. Based on SEM, TEM and XRD characterizations, the influence of the synthesis time and the reactants concentration in the structure and morphology of the resultant KNbO3 was established. The conditions that favor the crystallization of nanofingers were determined to be small amounts of Nb2O5 and short reaction times. (C) 2008 Elsevier B.V. All rights reserved.

Sinterização de filmes finos de LiNbO3 em forno microondas: estudo da influência da direção do fluxo de calor

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Epitaxially grown LiNbO3 thin films by polymeric precursor method

LiNbO3 thin films were grown on (0001) sapphire substrates by a chemical route, using the polymeric precursor method. The overall process consists of preparing a coating solution from the Pechini process, based on metallic citrate polymerization, the precursor films, deposited by dip coating, are then heat treated to eliminate the organic material and to synthesize the phase. In this work, we studied the influence of the heat treatment on the structural and optical properties of single-layered films. Two routes were also investigated to increase the film thickness: increasing the viscosity of the coating solution and/or increasing the number of successively deposited layers. The x-ray diffraction theta -2 theta scans revealed the c-axis orientation of the single- and multilayered films and showed that efficient crystallization can be obtained at temperatures as low as 400 degreesC, the phi-scan diffraction evidenced the epitaxial growth with two in-plane variants, A microstructural study revealed that the films were crack free, homogeneous, and relatively dense. Finally, the investigation of the optical properties (optical transmittance and refractive index) confirmed the good quality of the films. These results indicate that the polymeric precursor method is a promising process to develop lithium niobate waveguides.

Optical characterization of cubic AlGaN/GaN quantum wells

Cubic phase group III-nitrides were grown using RF plasma assisted Molecular Beam Epitaxy on GaAs (001) substrates. High-resolution X-ray diffraction, photoluminescence, cathodoluminescence and photoreflectance measurements were employed to characterize the structural and optical properties of GaN/AlxGa1-xN Multi Quantum Well (MQW) structures, in which both Aluminum content and well widths were varied. The observed quantized states are in agreement with first-principles based theoretical calculations.

Multi-layered LiNbO3 films prepared by a polymeric precursor method

The polymeric precursor method was used to prepare multi-layered LiNbO3 films. The overall process consists of preparing a coating solution from the Pechini process and the deposited film is subsequently heat-treated. Two-layered films were prepared by this process, onto (0001) sapphire substrates. Two different routes were investigated for the heat-treatment. The amorphous route consisted of performing, after each deposition, a pre-treatment at low temperature to eliminate the organic material. In this case, the crystallization heat-treatment was performed only after the two layers had been deposited. on the other hand, a process layer-after-layer crystallization was used. Both routes led to (0001) LiNbO3 oriented films. However, only the film prepared by the layer-after-layer crystallization presented an epitaxial growth and a crack-free morphology. Moreover, the layer-after-layer crystallization process led to a film exhibiting the best optical properties. (C) 2001 Elsevier B.V. Ltd. All rights reserved.

Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate

Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular structures, dark dots surrounded by rectangles and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We conclude that the observed irregularities are the result of a melting process due to the existence of a liquid Ga phase on the growing surface.

Influence of oxygen atmosphere on LiNbO3 thin films prepared by Pechini process

Thin films of lithium niobate were deposited on the Pt/Ti/SiO2 (111) substrates by the polymeric precursor method (Pechini process). Annealing in static air and oxygen atmosphere was performed at 500°C for 3 hours. The films obtained were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The dielectric constant, dissipation factor and resistance were measured in frequency region from 10 Hz to 10 MHz. Electrical characterizations of the films pointed to ferroelectricity via hysteresis loop. The influence of oxygen atmosphere on crystallization and properties of LiNbO3 thin films is discussed.

Influence of the network modifier on the characteristics of MSnO 3 (M=Sr and Ca) thin films synthesized by chemical solution deposition

CaSnO3 and SrSnO3 alkaline earth stannate thin films were prepared by chemical solution deposition using the polymeric precursor method on various single crystal substrates (R- and C-sapphire and 100-SrTiO3) at different temperatures. The films were characterized by X-ray diffraction (θ-2θ, ω- and φ-scans), field emission scanning electron microscopy, atomic force microscopy, micro-Raman spectroscopy and photoluminescence. Epitaxial SrSnO3 and CaSnO 3 thin films were obtained on SrTiO3 with a high crystalline quality. The long-range symmetry promoted a short-range disorder which led to photoluminescence in the epitaxial films. In contrast, the films deposited on sapphire exhibited a random polycrystalline growth with no meaningful emission regardless of the substrate orientation. The network modifier (Ca or Sr) and the substrate (sapphire or SrTiO3) influenced the crystallization process and/or the microstructure. Higher is the tilts of the SnO6 octahedra, as in CaSnO3, higher is the crystallization temperature, which changed also the nucleation/grain growth process. © 2012 Elsevier Inc. All rights reserved.

Efeitos estruturais e ópticos da incorporação de Mn em filmes nanocristalinos de 'GA IND.1-x'MN IND.XN' preparados por sputtering reativo

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Estudo da interação entre camadas de super-redes supercondutor/isolante/ferromagneto

Pós-graduação em Ciência e Tecnologia de Materiais - FC