Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars

This work reports on the growth of (In, Ga)N core−shell micro pillars by plasma-assisted molecular beam epitaxy using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template. Upon (In, Ga)N growth, core−shell structures with emission at around 3.0 eV are formed. Further, the fabrication of a core−shell pin structure is demonstrated.

High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes

Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a patterned (10–12) r -plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 m × 300 m LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.

Recent progress in fluorescent blue light-emitting materials

Organic light emitting diodes (OLEDs), as an emerging technology for display and solid state lighting application, have many advantages including self-emission, lightweight, flexibility, low driving voltage, low power consumption, and low production cost. With the advancement of light emitting materials development and device architecture optimization, mobile phones and televisions based on OLED technology are already in the market. However, to obtain efficient, stable and pure blue emission than producing lower-energy colors is still one of the important subjects of these challenges. Full color and pure white light can be achieved only having stable blue emitting materials. To address this issue, significant effort has been devoted to develop novel blue light emitting materials in the past decade aiming at further improving device efficiency, color quality of emission light, and device lifetime. This review focuses on recent efforts of synthesis and device performance of small molecules, oligomers and polymers for blue emission of organic electroluminescent devices.

Efficient Solid-State Light-Emitting CuCdS Nanocrystals Synthesized in Air

Semiconductor nanocrystals (NCs) possess high photoluminescence (PL) typically in the solution phase. In contrary, PL rapidly quenches in the solid state. Efficient solid state luminescence can be achieved by inducing a large Stokes shift. Here we report on a novel synthesis of compositionally controlled CuCdS NCs in air avoiding the usual complexity of using inert atmosphere. These NCs show long-range color tunability over the entire visible range with a remarkable Stokes shift up to about 1.25eV. Overcoating the NCs leads to a high solid-state PL quantum yield (QY) of ca. 55% measured by using an integrating sphere. Unique charge carrier recombination mechanisms have been recognized from the NCs, which are correlated to the internal NC structure probed by using extended X-ray absorption fine structure (EXAFS) spectroscopy. EXAFS measurements show a Cu-rich surface and Cd-rich interior with 46% Cu-I being randomly distributed within 84% of the NC volume creating additional transition states for PL. Color-tunable solid-state luminescence remains stable in air enabling fabrication of light-emitting diodes (LEDs).

Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection

A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride (PTCDA) doped N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB), has been fabricated and characterized. An organic light-emitting diode using such a composite in hole injection exhibits the improved performance as compared with the reference device using neat NPB in hole injection. For example, at a luminance of 2000 cd/m(2), the former device gives a current efficiency of 2.0cd/A, higher than 1.6cd/A obtained from the latter device. Furthermore, the semicrystalline composite has been shown thermally to be more stable than the neat NPB thin film, which is useful for making organic light emitting diodes with a prolonged lifetime.

Tunnel Junction AlGaInP Light Emitting Diode

The n-type GaAs substrates are used and their conductive type is changed to p-type by tunnel junction for AlGaInP light emitting diodes (TJ-LED), then n-type GaP layer is used as current spreading layer. Because resistivity of the n-type GaP is lower than that of p-type, the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n-type GaP current spreading layer. For TJ-LED with 3μm n-type GaP current spreading layer, experimental results show that compared with conventional LED with p-type GaP current spreading layer, light output power is increased for 50% at 20mA and for 66.7% at 100mA.

Red-Light-Emitting Iridium Complexes with Hole-Transporting 9-Arylcarbazole Moieties for Electrophosphorescence Efficiency/ Color Purity Trade-off Optimization

The synthesis, structures, photophysics, electrochemistry and electrophosphorescent properties of new red phosphorescent cyclometalated iridium(III) isoquinoline complexes, bearing 9-arylcarbazolyl chromophores, are reported. The functional properties of these red phosphors correlate well with the results of density functional theory calculations. The highest occupied molecular orbital levels of these complexes are raised by the integration of a carbazole unit to the iridium isoquinoline core so that the hole-transporting ability is improved in the resulting complexes relative to those with I-phenylisoquinoline ligands. All of the complexes are highly thermally stable and emit an intense red light at room temperature with relatively short lifetimes that are beneficial for highly efficient organic light-emitting diodes (OLEDs).

Fabrication of an integrated pixel with an organic light-emitting diode driven by copper phthalocyanine organic thin film transistors

An organic integrated pixel with organic light-emitting diodes (OLEDs) driven by organic thin film transistors (OTFTs) is fabricated by a greatly simplified processing. The OTFTs are based on copper phthalocyanine as the active medium and fabricated on indium-tin-oxide (ITO) glass with top-gate structure, thus an organic integrated pixel is easily made by integrating OLED with OTFT. The OTFTs show field-effect mobility of 0.4 cm(2) /Vs and on/off ratio of 10(3) order. The OLED is driven well and emits the brightness as large as 2100cd/m(2) at a current density of 14.6 mu A/cm(2) at -19.7 V gate voltage. This simple device structure is promising in the future large-area flexible OLED displays.

Improved color purity and efficiency by a coguest emitter system in doped red light-emitting devices

We demonstrate red organic light-emitting diodes (OLEDs) with improved color purity and electroluminescence (EL) efficiency by codoping a green fluorescent sensitizer 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1, 1, 7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano(6,7-8-ij)quinolizin-11-one (C545T) as the second dopant and a red fluorescent dye 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as the lumophore into tris(8-hydroquinoline) aluminum (Alq(3)) host. It was found that the C545 T dopant did not by itself emit but assisted the carrier trapping from the host Alq(3) to the red emitting dopant. The red OLEDs realized by this approach not only kept the purity of the emission color, but also significantly improved the EL efficiency. The current efficiency and power efficiency, respectively, reached 12 cd/A at a current density of 0.3 mA/cm(2) and 10lm/W at a current density of 0.02 mA/cm(2), which are enhanced by 1.4 and 2.6 times compared with devices where the emissive layer is composed of the DCJTB doped Alq(3), and a stable red emission (chromaticity coordinates: x = 0.64, y = 0.36) was obtained in a wide range of voltage. Our results indicate that the coguest system is a promising method for obtaining high-efficiency red OLEDs.

Improved efficiency by a fluorescent dye in red organic light-emitting devices based on a europium complex

By doping a fluorescent dye in the emissive layer, we realized high efficient red organic light-emitting diodes (OLEDs) based on a europium complex. The OLEDs realized by this method showed pure red emission at 612 nm with a full width at half maximum Of 3 nm. The Commission International de L'Eclairage Coordination keeps approximately the same as the emission of pure Eu3+. The maximum brightness and EL efficiency reached 2450 cd/m(2) at 20 V and 9.0 cd/A (6.0 lm/w) at a current density of 0.012 mA/cm(2), respectively. At the brightness of 100 cd/m(2), the current efficiency reached 4.4 cd/A.

Novel soluble N-phenyl-carbazole-containing PPVs for light-emitting devices: Synthesis, electrochemical, optical, and electroluminescent properties

Novel PPV derivatives (PCA8-PV and PCA8-MEHPV) containing N-phenyl-carbazole units on the back-bone were successfully synthesized by the Wittig polycondensation of 3,6-bisformyl-N-(4-octyloxy-phenyl)carbazole with the corresponding tributyl phosphonium salts in good yields. The newly formed and dominant trans vinylene double bonds were confirmed by FT-IR and NMR spectroscopy. The polymers (with (M) over bar (w) of 6289 for PCA8-PV and 7387 for PCA8-MEHPV) were soluble in common organic solvents and displayed high thermal stability (T(g)s are 110.7 degreesC for PCA8-PV and 92.2 degreesC for PCA8-MEHPV, respectively) because of the incorporation of the N-phenyl-carbazole units. Cyclic voltammetry investigations (onsets: 0.8 V for PCA8-PV and 0.7 V for PCA8-MEHPV) suggested that the polymers possess enhanced hole injection/transport properties, which can be also attributed to the N-phenyl-carbazole units on the backbone. Both the single-layer and the double-layer light-emitting diodes (LEDs) that used the polymers as the active layer emitted a greenish-blue or bluish-green light (the maximum emissions located 494 nm for PCA8-PV and 507 nm for PCA8-MEHPV, respectively).

Blue light-emitting polymer with polyfluorene as the host and highly fluorescent 4-dimethylamino-1,8-naphthalimide as the dopant in the sidechain

The dopant/host concept, which is an efficient approach to enhance the electroluminescence (EL) efficiency and stability for organic light-emitting diodes (OLEDs) devices, has been applied to design efficient and stable blue light-emitting polymers. By covalently attaching 0.2 mol % highly fluorescent 4-dimethylamino-1,8-naphthalimide (DMAN) unit (photoluminescence quantum efficiency: Phi(PL)=0.84) to the pendant chain of polyfluorene, an efficient and colorfast blue light-emitting polymer with a dopant/host system and a molecular dispersion feature was developed. The single-layer device (indium tin oxide/PEDOT/polymer/Ca/Al) exhibited the maximum luminance efficiency of 6.85 cd/A and maximum power efficiency of 5.38 lm/W with the CIE coordinates of (0.15, 0.19). Moreover, no undesired long-wavelength green emission was observed in the EL spectra when the device was thermal annealed in air at 180 degrees C for 1 h before cathode deposition. These significant improvements in both efficiency and color stability are due to the charge trapping and energy transfer from polyfluorene host to highly fluorescent DMAN dopant in the molecular level.

Highly efficient green light emitting polyfluorene incorporated with 4-diphenylamino-1,8-naphthalimide as green dopant

The dopant/host methodology, which enables efficient tuning of emission color and enhancement of the electroluminescence (EL) efficiency of organic light emitting diodes (OLEDs) based on small molecules, is applied to the design and synthesis of highly efficient green light emitting polymers. Highly efficient green light emitting polymers were obtained by covalently attaching just 0.3-1.0 mol% of a green dopant, 4-(N,N-diphenyl) amino-1,8-naphthaliniide (DPAN), to the pendant chain of polyfluorene (the host). The polymers emit green light and exhibit a high photoluminescence (PL) quantum yield of Lip to 0.96 in solid films, which is attributed to the energy transfer from the polyfluorene host to the DPAN dopant unit. Single layer devices (device configuration: ITO/PEDOT/Polymer/Ca/Al) of the polymers exhibit a turn on voltage of 4.8 V, luminance efficiency of 7.43 cd A(-1), power efficiency of 2.96 lm W-1 and CIE coordinates at (0.26, 0.58). The good device performance can be attributed to the energy transfer and charge trapping from the polyfluorene host to the DPAN dopant unit as well as the molecular dispersion of the dopant in the host.