967 resultados para Light Emitting Diode


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The synthesis, structures, photophysics, electrochemistry and electrophosphorescent properties of new red phosphorescent cyclometalated iridium(III) isoquinoline complexes, bearing 9-arylcarbazolyl chromophores, are reported. The functional properties of these red phosphors correlate well with the results of density functional theory calculations. The highest occupied molecular orbital levels of these complexes are raised by the integration of a carbazole unit to the iridium isoquinoline core so that the hole-transporting ability is improved in the resulting complexes relative to those with I-phenylisoquinoline ligands. All of the complexes are highly thermally stable and emit an intense red light at room temperature with relatively short lifetimes that are beneficial for highly efficient organic light-emitting diodes (OLEDs).

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A series of cross-linkable aromatic amines has been synthesized by the multi-step synthetic rout. Full characterization of their structure by H-1 NMR-, IR- and mass spectrometry is presented. The synthesized materials were examined by various techniques including differential scanning calorimetry, thermogravimetry, UV and electron photoemission spectrometry.

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Characteristics of white organic light-emitting devices based on phosphor sensitized fluorescence are improved by using a multiple-emissive-layer structure, in which a phosphorescent blue emissive layer is sandwiched between red and green&yellow ones. In this device, bis[(4,6-difluorophenyl)-pyridinato-N,C-2] (picolinato), bis(2,4-diphenyl-quinoline) iridium (III) acetylanetonate, fac bis (2-phenylpyridine) iridium, and 5,6,11,12-tetraphenylnaphthacene are used as blue, red, green, and yellow emitters, respectively.

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An amorphous photoluminescent material based on a dithienylbenzothiadiazole structure has been used for the fabrication of organic red-light-emitting diodes. The synergistic effects of the electron-transport ability and exciton confinement of the emitting material allow for the fabrication of efficient pure-red-light-emitting devices without a hole blocker.

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A series of novel red-emitting iridium dendrimers functionalized with oligocarbazole host dendrons up to the third generation (red-G3) have been synthesized by a convergent method, and their photophysical, electrochemical, and electroluminescent properties have been investigated. In addition to controlling the intermolecular interactions, oligocarbazole-based dendrons could also participate in the electrochemical and charge-transporting process. As a result, highly efficient electrophosphorescent devices can be fabricated by spin-coating from chlorobenzene solution in different device configurations.

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This paper reports a new patterning method, the complementary-structure micropatterning (CSMP) technique, to fabricate the undercut structures for the passive-matrix display of organic light-emitting diodes (OLEDs). First, the polyvinylpyrrolidone (PVP) stripe patterns with a trapeziform cross-section were formed by micromolding in capillaries. Then the photoresist was spin coated on the substrate with the patterned PVP stripes and developed in water.

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It has been experimentally found that molybdenum oxide (MoO3) as the interfacial modification layer on indium-tin-oxide (ITO) in organic light-emitting diodes (OLEDs) significantly improves the efficiency and lifetime. In this paper, the role of MoO3 and MoO3 doped N,N '-di(naphthalene-1-yl)-N,N '-diphenyl-benzidine (NPB) as the interface modification layer on ITO in improvement of the efficiency and stability of OLEDs is investigated in detail by atomic force microscopy (AFM), polarized optical microscopy, transmission spectra, ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS).

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A soluble nonionic surfactant, polyethylenimine 80% ethoxylated (PEIE) solution, was used as the electron injection material in inverted bottom-emission organic light emitting diodes (OLEDs). The transparent PEIE film was formed on indium-tin-oxide cathode by simple spin-coating method and it was found that the electron injection was greatly enhanced. The devices with PEIE electron injection layer had achieved significant enhancement in luminance and efficiency. The maximum luminance reached 47 000 cd/m(2), and the maximum luminance efficiency and power efficiency arrived at 19.7 cd/A and 10.6 lm/W, respectively.

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We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq(3)) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resulting in a large increase in luminance and efficiency. The maximum luminance, current efficiency, and power efficiency reach 21 000 cd/cm(2), 6.5 cd/A, and 3.5 lm/W, respectively, which are 40%-50% higher in efficiency than that of IBOLEDs with cesium carbonate (Cs2CO3) doped Alq(3) as the electron injection layer, where the efficiencies are only 4.5 cd/A and 2.2 lm/W.

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Self-assembled monolayers (SAMs) of a series of p-substituted benzoyl chlorides were formed on indium tin oxide as the cathode for the fabrication of inverted bottom-emitting organic light-emitting diodes (IBOLEDs). The studies on the efficiency of electron injection and device performances showed that the direct tunneling of electron and the formation of dipole associated with the monolayer-forming molecule lead to significant enhancement in electron injection. Consequently, the device efficiency is greatly improved.

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Efficient white organic light-emitting diodes (WOLEDs) using europium complex as the red unit are presented. The WOLEDs were fabricated by using the structure of indium tin oxide (ITO)/N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB)/4,4-N, N-dicarbazolebiphenyl (CBP) : bis(2,4-diphenylquinolyl-N, C-2) iridium (acetylacetonate) ((PPQ)(2)Ir(acac)) : Eu (III) tris(thenoyltrifluoroacetone) 3,4,7,8-tetramethyl-1,10-phenanthroline (Eu(TTA)(3)(Tmphen))/NPB/2-methyl-9,10-di(2-naphthyl)anthracene (MADN) : p-bis (p-N, N-di-phenyl-aminostyryl)benzene (DSA-Ph)/9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)/tris(8-hydroxyquinoline) aluminium (Alq3)/LiF/Al.

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White light emission from tandem organic light-emitting diodes consisting of blue and red light units separated by a transparent interconnecting layer of Al/WO3/Au has been realized. The devices have a structure of indium-tin-oxide (ITO)/molybdenum oxide (MoO3) (8 nm)/N, N'-di(naphthalene-1-yl)-N, N'-diphenyl-benzidine (NPB)(100 nm)/p-bis(p-N, N-diphenyl-aminostyryl) benzene) (DSA-ph): 2-methyl-9,10-di(2-naphthyl) anthracene (MADN)(40 nm)/tris(8-hydroxylquinoline) aluminium (Alq(3)) (10 nm)/LiF(1 nm)/Al(2 nm)/WO3(3 nm)/Au(16 nm)/MoO3(5 nm)/NPB(60 nm)/Alq(3): 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)(30 nm)/Alq3(30 nm)/LiF(1 nm)/Al(150 nm).

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We developed an approach to realize blue, green and red emission from top-emitting white organic light-emitting diodes (OLEDs) through depositing exterior tunable optical films on top of the OLEDs. Three primary colors for full color display including blue, green and red emission are achieved by controlling the wavelength-dependent transmittance of the multilayer optical films overlaid on the emissive layer.

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We demonstrate an approach for realizing colour-controllable light emission from top-emitting organic light-emitting diodes (TEOLEDs) by utilizing exterior multilayer films overlaid on them. The emissive colour varies from blue to red for the TEOLED with green tris(8-quinolinolato) aluminium as the emissive layer by tuning the exterior multilayer films. The theoretical simulation of the electroluminescence for the colour tunable TEOLEDs is demonstrated and accords well with experimental results. The advantage of this approach is that the optical and electrical characteristics of the TEOLED can be controlled individually and hence provides the feasibility to realize a full-colour display by using white TEOLEDs.

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Herein, an insulating fluorinated polyimide (F-PI) is utilized as an ultrathin buffer layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in polymer light-emitting diodes to enhance the device performance. The selective solubility of F-PI in common solvents avoids typical intermixing interfacial problems during the sequential multilayer spin-coating process. Compared to the control device, the F-PI modification causes the luminous and power efficiencies of the devices to be increased by a factor of 1.1 and 4.7, respectively, along with almost 3-fold device lifetime enhancement. Photovoltaic measurement, single-hole devices, and X-ray photoelectron spectroscopy, are utilized to investigate the underlying, mechanisms, and it is found that the hole injection barrier is lowered owing to the interactions between the PEDOT:PSS and F-PI. The F-PI modified PEDOT:PSS layer demonstrates step-up ionization potential profiles from the intrinsic bulk PEDOT:PSS side toward the F-PI-modified PEDOT:PSS surface, which facilitate the hole injection.