Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes

We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.

Lean thinking: Glass Wall Management

Sendo os desperdícios “Waste” associados à atividade industrial em Portugal e nos mercados globais e os seus custos inerentes, uma das maiores preocupações a todos os níveis de gestão empresarial, a filosofia “Lean” nasce como ajuda e encaminhamento na solução desta problemática. O conceito “Lean”, no que se refere à indústria, desde sempre e até aos dias de hoje, tem uma enorme ênfase, com a adoção deste conceito.Verificam-se bons resultados ao nível da redução de custos, melhoria da qualidade geral dos artigos produzidos, no controlo da produção em geral e é uma poderosa ferramenta no estreitamento da relação entre os diferentes intervenientes da cadeia de valor de determinado produto, sobretudo com fornecedores e com clientes. Com “Lean Management” e “Glass Wall Management”, em ambientes onde as empresas mais avançadas estão a procurar melhorar a sua competitividade através de uma gestão transparente (“Glass Wall Management”), a partir da qual, “toda informação relevante é compartilhada de maneira a que todos entendam a situação”(Suzaki, K, 1993), ganha cada vez mais importância a existência de uma estrutura organizacional que permita esta transparência e a consequente maturidade das empresas. Neste trabalho foram descritos alguns processos de gestão transparente desenvolvidos nos últimos dois anos numa PME portuguesa, aprofundando o processo de gestão transparente vigente e as ferramentas que ajudam a empresa e que na sua globalidade poderão ser extrapoladas a outras PME Portuguesas de modo que a informação importante e relevante seja partilhada por todos os intervenientes na estrutura empresarial, sendo entendida e desenvolvida por todos através de Edições e Revisões aos documentos mais importantes da empresa. Neste estudo foram contactadas vinte e uma PME’S portuguesas de tipologia de produção MTO (Make to Order) do sector dos estofos/mobiliário, e solicitado o preenchimento de um Questionário, tendo como fim em vista, a verificação do uso desta metodologia “Glass Wall Management” à escala empresarial portuguesa e a interpretação do Conceito Geral “Lean” como filosofia de redução de materiais, tempos e custos.

Photodetector with integrated optical thin film filters

This paper reports on optical filters based on a-SiC:H tandem pi'n/pin heterostructures. The spectral sensitivity is analyzed. Steady state optical bias with different wavelengths are applied from each front and back sides and the photocurrent is measured. Results show that it is possible to control the sensitivity of the device and to tune a specific wavelength range by combining radiations with complementary light penetration depths. The transfer characteristics effects due to changes in the front and back optical bias wavelength are discussed. Depending on the wavelength of the external background and irradiation side, the device acts either as a short- or a long-pass band filter or as a band-stop filter. The output waveform presents a nonlinear amplitude-dependent response to the wavelengths of the input channels.

The problems of the european union film industry: an evolution from "subsidy trap" to the advent of "virtual print fee" model

Dissertação de Mestrado, Gestão de Empresa (MBA), 16 de Julho de 2013, Universidade dos Açores.

Play, the film

O artigo analisa e debate o espectáculo Play, the Film, nascido da colaboração entre o colectivo Cão Solteiro e André Godinho, focando as dúvidas por ele suscitadas relativamente ao posicionamento do espectador – «onde estamos» – e as levantadas relativamente ao sentido dos discursos – «o que é que isto quer dizer?».

Nanotech thin film photovoltaics

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

Study of Annealed Indium Tin Oxide-Films prepared by RF Reactive Magnetron Sputtering

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 x 10(-1) Omega*cm and decreases down to 6.9 x 10(-3) Omega*cm as the annealing temperature is increased up to 500 degrees C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

Shane Meadows’ country: analysis of the film this is England (2006)

This Is England is social realist film portraying racism and poverty in 1980s Britain through the eyes of Shaun, a 12 year old boy, who has lost his father in the Falklands war and as to come to terms with his own identity, the difficult transition from childhood to adolescence and the need to fit in a determined group/tribe/gang. The following article aims at analysing relevant aspects depicted from the film emphasizing the so much debated reality of life during 80s. In This is England Shane Meadows manages to rediscover his own self geography, by revisiting his adolescent years. It is a biographical film about the importance of peer pressure and the results of an excess of nationalism, at the same time it typifies some issues related to the 80s youth culture.

Adsorptive stripping voltammetric determination of venlafaxine in urine with a mercury film microelectrode

An adsorptive stripping voltammetric procedure for the determination of the antidepressant venlafaxine in urine using a mercury film microelectrode wasdeveloped. The method is based on controlled adsorptive accumulation of the drug at the potential of 1.00V (vs. Ag/AgCl) in the presence of 1.25 x10 -2 molL- 1 borate buffer (pH 8.7). Urine samples were analyzed directly after performing a ten-fold dilution with the supporting electrolyte but without other pretreatment. The limit of detection obtained for a 30 s collection time was 0.693x 10- 6 mol L -1. Recovery experimentsgave good results at the 10 -6 mol L- 1 level (bias less 5% were obtained).

Voltammetric determination of dialifos in soils with a mercury film ultramicroelectrode

An extraction-adsorptive stripping voltammetric procedure for the determination of the pesticide dialifos in soil samples using microwave-assisted solvent extraction and a mercury film ultramicroelectrode was developed. The method is based on the use of hexane-acetone solvent (1:1, v/v) and on controlled adsorptive accumulation of the insecticide at the potential of -0.10V (versus Ag/AgCl) in the presence of Britton-Robinson buffer (pH 2.0). Soil sample extracts were analyzed directly after drying and redissolution with the supporting electrolyte, but without other pretreatment. The limit of detection obtained for a 10sec collection time was 2.0x10-8 mol L-1. Recovery experiments for the global procedure, at the 0.100µgg-1 level, gave satisfactory average and standard deviation results for the two different soils tested.

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

In this work, we investigated structural, morphological, electrical, and optical properties from a set of Cu2ZnSnS4 thin films grown by sulfurization of metallic precursors deposited on soda lime glass substrates coated with or without molybdenum. X-ray diffraction and Raman spectroscopy measurements revealed the formation of single-phase Cu2ZnSnS4 thin films. A good crystallinity and grain compactness of the film was found by scanning electron microscopy. The grown films are poor in copper and rich in zinc, which is a composition close to that of the Cu2ZnSnS4 solar cells with best reported efficiency. Electrical conductivity and Hall effect measurements showed a high doping level and a strong compensation. The temperature dependence of the free hole concentration showed that the films are nondegenerate. Photoluminescence spectroscopy showed an asymmetric broadband emission. The experimental behavior with increasing excitation power or temperature cannot be explained by donor-acceptor pair transitions. A model of radiative recombination of an electron with a hole bound to an acceptor level, broadened by potential fluctuations of the valence-band edge, was proposed. An ionization energy for the acceptor level in the range 29–40 meV was estimated, and a value of 172 ±2 meV was obtained for the potential fluctuation in the valence-band edge.

Admittance spectroscopy of Cu2ZnSnS4 based thin film solar cells

In this report, we propose an AC response equivalent circuit model to describe the admittance measurements of Cu2ZnSnS4 thin film solar cell grown by sulphurization of stacked metallic precursors. This circuit describes the contact resistances, the back contact, and the heterojunction with two trap levels. The study of the back contact resistance allowed the estimation of a back contact barrier of 246 meV. The analysis of the trap series with varying temperature revealed defect activation energies of 45 meV and 113 meV. The solar cell’s electrical parameters were obtained from the J-V curve: conversion efficiency, 1.21%; fill factor, 50%; open circuit voltage, 360 mV; and short circuit current density, 6.8 mA/cm2.

Study of optical and structural properties of Cu2ZnSnS4 thin films

Cu2ZnSnS4 is a promising semiconductor to be used as absorber in thin film solar cells. In this work, we investigated optical and structural properties of Cu2ZnSnS4 thin films grown by sulphurization of metallic precursors deposited on soda lime glass substrates. The crystalline phases were studied by X-ray diffraction measurements showing the presence of only the Cu2ZnSnS4 phase. The studied films were copper poor and zinc rich as shown by inductively coupled plasma mass spectroscopy. Scanning electron microscopy revealed a good crystallinity and compactness. An absorption coefficient varying between 3 and 4×104cm−1 was measured in the energy range between 1.75 and 3.5 eV. The band gap energy was estimated in 1.51 eV. Photoluminescence spectroscopy showed an asymmetric broad band emission. The dependence of this emission on the excitation power and temperature was investigated and compared to the predictions of the donor-acceptor-type transitions and radiative recombinations in the model of potential fluctuations. Experimental evidence was found to ascribe the observed emission to radiative transitions involving tail states created by potential fluctuations.

Assessment of the potential of tin sulphide thin films prepared by sulphurization of metallic precursors as cell absorbers

In this work, SnxSy thin films have been grown on soda-lime glass substrates by sulphurization of metallic precursors in a nitrogen plus sulphur vapour atmosphere. Different sulphurization temperatures were tested, ranging from 300 °C to 520 °C. The resulting phases were structurally investigated by X-Ray Diffraction and Raman spectroscopy. Composition was studied using Energy Dispersive Spectroscopy being then correlated with the sulphurization temperature. Optical measurements were performed to obtain transmittance and reflectance spectra, from which the energy band gaps, were estimated. The values obtained were 1.17 eV for the indirect transition and for the direct transition the values varied from 1.26 eV to 1.57 eV. Electrical characterization using Hot Point Probe showed that all samples were p-type semiconductors. Solar cells were built using the structure: SLG/Mo/SnxSy/CdS/ZnO:Ga and the best result for solar cell efficiency was 0.17%.

Cu2ZnSnS4 solar cells prepared with sulphurized dc-sputtered stacked metallic precursors

In the present work we report the details of the preparation and characterization results of Cu2ZnSnS4 (CZTS) based solar cells. The CZTS absorber was obtained by sulphurization of dc magnetron sputtered Zn/Sn/Cu precursor layers. The morphology, composition and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction and Raman scattering. The majority carrier type was identified via a hot point probe analysis. The hole density, space charge region width and band gap energy were estimated from the external quantum efficiency measurements. A MoS2 layer that formed during the sulphurization process was also identified and analyzed in this work. The solar cells had the following structure: soda lime glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Al grid. The best solar cell showed an opencircuit voltage of 345 mV, a short-circuit current density of 4.42 mA/cm2, a fill factor of 44.29% and an efficiency of 0.68% under illumination in simulated standard test conditions: AM 1.5 and 100 mW/cm2.