Isolation and structure elucidation of nortriterpenoids from Schisandra rubriflora

Seven new highly oxygenated nortriterpenoids, rubriflorins D-J (1-7), were isolated from the leaves and stems of Schisandra rubriflora, and their structures were elucidated on the basis of extensive analysis of spectroscopic data. These new compounds feat

Extraction and structure elucidation of natural compounds of some gorgonians of the Persian Gulf and also physiological and pharmacological effects of gorgonian extract on some selected organisms

In the present research, investigations were carried out for structure elucidation of natural compounds and also for studing biological and teratogenical effects of two Genus of soft corals named as " Echinogorgia cf. indica" and "Sinularia erecta" in Persian Gulf. First, 350 gr Echinogorgia was extracted by Acetone, then, the extract was separated by ether from aqueos phase to give 4.5 gr oil. The oil eluted with Petrol - ether Et2 o (9:1) which was recovered Linderazulene and it's derivative as purple Cristals (350 mg/ca 0.1 %). In order to determine molecular structure, the Samples were used for spectroscopic method as: H1- NMR , C13- NMR and 2D NMR. Also, for extraction and structure elucidation of natural compounds, the soft coral " sinularia erecta " were used 1187/37 gr and extracted by Aceton. The extract was concentrated and resulting aqueous suspension and extracted by using ether to give 8.41 gr oil. The oil , was Chromatographed on a column of silica gel and some different fractions were gathered. Initial fraction (1-11) which were nonpolar compounds were seprated by GC/MS. Mass spectrum were prepared and much compounds were recognized.

Molecular modeling on some human interleukins sharing gamma c of interleukin-2 receptor, and structure-function relationships

Five models for human interleukin-7 (HIL-7), HIL-9, HIL-13, HIL-15 and HIL-17 have been generated by SYBYL software package. The primary models were optimized using molecular dynamics and molecular mechanics methods. The final models were optimized using a steepest descent algorithm and a subsequent conjugate gradient method. The complexes with these interleukins and the common gamma chain of interleukin-2 receptor (IL-2R) were constructed and subjected to energy minimization. We found residues, such as Gln127 and Tyr103, of the common gamma chain of IL-2R are very important. Other residues, e.g. Lys70, Asn128 and Glu162, are also significant. Four hydrophobic grooves and two hydrophilic sites converge at the active site triad of the gamma chain. The binding sites of these interleukins interaction with the common gamma chain exist in the first helical and/or the fourth helical domains. Therefore, we conclude that these interleukins binds to the common gamma chain of IL-2R by the first and the fourth helix domain. Especially at the binding sites of some residues (lysine, arginine, asparagine, glutamic acid and aspartic acid), with a discontinuous region of the common gamma chain of IL-2R, termed the interleukins binding sites (103-210). The study of these sites can be important for the development of new drugs. (C) 2000 Elsevier Science B.V. All rights reserved.

IPLR: An online resource for Greek word-level and sublexical information

We present a new online psycholinguistic resource for Greek based on analyses of written corpora combined with text processing technologies developed at the Institute for Language & Speech Processing (ILSP), Greece. The "ILSP PsychoLinguistic Resource" (IPLR) is a freely accessible service via a dedicated web page, at http://speech.ilsp.gr/iplr. IPLR provides analyses of user-submitted letter strings (words and nonwords) as well as frequency tables for important units and conditions such as syllables, bigrams, and neighbors, calculated over two word lists based on printed text corpora and their phonetic transcription. Online tools allow retrieval of words matching user-specified orthographic or phonetic patterns. All results and processing code (in the Python programming language) are freely available for noncommercial educational or research use. © 2010 Springer Science+Business Media B.V.

Thermal annealing effect on the nanomechanical properties and structure of P3HT:PCBM thin films

Nanostructured polymer-fullerene thin films are among the most prominent materials for application in high efficient polymer solar cells. Specifically, poly(3-hexylthiophene) (P3HT) and fullerene derivatives (PCBM) blends are used as the donor/acceptor materials forming a bulk heterojunction. Although P3HT:PCBM properties have been extensively studied, less light has been set on its nanomechanical properties, which affect the device service life. In this work Atomic Force Acoustic Microscopy (AFAM), Atomic Force Spectroscopy and Nanoindentation were used to study the effect of the fullerene presence and the annealing on the P3HT:PCBM nanomechanical behavior. The P3HT:PCBM thin films were prepared by spin coating on glass substrates and then annealed at 100 °C and 145 °C for 30 min. Large phase separation was identified by optical and Atomic Force Microscopy (AFM) for the annealed samples. Needle-like PCBM crystals were formed and an increase of the polymer crystallinity degree with the increase of the annealing temperature was confirmed by X-ray diffraction. AFAM characterization revealed the presence of aggregates close to stiff PCBM crystals, possibly consisting of amorphous P3HT material. AFM force-distance curves showed a continuous change in stiffness in the vicinity of the PCBM crystals, due to the PCBM depletion near its crystals, and the AFM indentation provided qualitative results about the changes in P3HT nanomechanical response after annealing. © 2011 Elsevier B.V. All rights reserved.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

Deep level and photoluminescence studies of Er-implanted GaN films

Deep level transient spectroscopy measurements were performed on the metal organic chemical vapor deposition epitaxially grown GaN before and after the implantation with Er. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300, 0.188, 0.600 and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees for 30 min. The origins of the deep defect levels were discussed. The photoluminescence (PL) properties of Er-implanted GaN thin films were also studied. After annealing at 900 degrees for 30 min in a nitrogen flow, Er-related 1.54 mu m luminescence peaks could be observed for the Er-implanted GaN sample. Moreover, the energy-transfer and recombination processes of the Er-implanted GaN film were described. (c) 2006 Elsevier B.V. All rights reserved.

Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots

The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 degreesC, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 degreesC, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 degreesC and that of the short-wavelength quantum-dot laser previously reported. (C) 2001 American Institute of Physics.