Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties

On the metalorganic chemical vapour deposition growth of AlN, by adjusting H-2+N-2 mixture gas components, we can gradually control island dimension. During the Volmer - Weber growth, the 2-dimensional coalescence of the islands induces an intrinsic tensile stress. Then, this process can control the in-plane stress: with the N-2 content increasing from 0 to 3 slm, the in-plane stress gradually changes from 1.5 GPa tensile stress to - 1.2GPa compressive stress. Especially, with the 0.5 slm N-2 + 2.5 slm H-2 mixture gas, the in-plane stress is only 0.1 GPa, which is close to the complete relaxation state. Under this condition, this sample has good crystal and optical qualities.

Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil

We report on improved electrical properties of lead zirconate titanate (PZT) film deposited on titanium metal foil using nitrogen annealing. After nitrogen annealing of the PZT capacitors, symmetric capacitance-voltage (C-V) characteristics, higher dielectric constant and breakdown field, less change of dielectric constant with frequency, lower dielectric loss and leakage current are obtained. (C) 2003 Elsevier B.V. All rights reserved.

Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

The effect of the N/Al ratio of AlN buffers on the optical and crystal quality of GaN films, grown by metalorganic chemical vapor deposition on Si(111) substrates, has been investigated. By optimizing the N/Al ratio during the AlN buffer, the threading dislocation density and the tensile stress have been decreased. High-resolution X-ray diffraction exhibited a (0002) full-width at half-maximum as low as 396 acrsec. The variations of the tensile stress existing in the GaN films were approved by the redshifts of the donor bound exiton peaks in the low-temperature photoluminescence measurement at 77 K. (C) 2003 Elsevier B.V. All rights reserved.

Structural, magnetic properties and photoemission study of Ni-doped ZnO

Nickel-doped ZnO (Zn1-xNixO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni hits it chemical valence of 2 +. According to the . We studied the electronic magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn0.86Ni0.14O. We studied the electronic structure of Zn0.86Ni0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at similar to 2 eV below the Fermi energy E-F, which is of Ni 3d origin. No emission was found at E-A, suggesting the insulating nature of the film. (c) 2005 Elsevier Ltd. All rights reserved.

The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE

We describe the growth of GaN on Si(111) substrates with AlxGa1-xN/AlN buffer layer by ammonia gas source molecular beam epitaxy (NH3-GSMBE). The influence of the AlN and AlxGa1-xN buffer layer thickness and the Al composition on the crack density of GaN has been investigated. It is found that the optimum thickness is 120 and 250 nm for AlN and AlxGa1-xN layers, respectively. The optimum Al composition is between 0.3 < x < 0.6. (c) 2005 Elsevier B.V. All rights reserved.

Optical properties of NAEC-PMMA nonlinear polymeric thin film

Novel guest nonlinear optical (NLO) chromophore molecules (4-nitrobenzene)-3-azo-9-ethylcarbazole (NAEC) were doped in poly (methyl methacrylate) (PMMA) host with a concentration of approximately 15% by weight. For a useful macroscopic electro-optic (EO) effect, these NLO molecules NAEC were arranged in a noncentrosymmetric structure in the host polymer by corona-onset poling at elevated temperature (COPET). For applying NAEC-PMMA polymer in optical devices such as EO switch, its optical properties have been investigated. The UV/Visible absorption spectra for the unpoled and poled polymer film were determined. The refractive index of the film was also determined from measurements of the coupling angles with the reflective intensity at 632.8 nm wavelength. Using the simple reflection technique, the EO coefficient 33 value was measured as 60 pm/V at 632.8 nm wavelength. The second-order nonlinear coefficient d(33) was characterized by the second-harmonic-generation (SHG) experimental setup and the calculated d(33) value reached 18.4 pm/V at 1064 nm wavelength. The relation between the second-order nonlinear coefficients d(33) and d(13) for the poled polymer film was also discussed in detail and the ratio d(33)/d(13) value was obtained as 3.3. (C) 2002 Kluwer Academic Publishers.

Electro-optical properties and temporal stability of the guest-host DCNP/PEK-c polymer thin film

The polyetherketone (PEK-c) guest-host system thin films in which the range of the weight percent of 3-(1,1-dicyanothenyl)-1-phenyl-4, 5- dihydro-1H-pryazole (DCNP) is from 20% to 50% were prepared. The predicted high value of electro-optical (EO) coefficient gamma(33) = 48.8 pm/V by using two-level model was obtained when the weight percent of DCNP in the polymer system is 40%, whereas EO coefficients are attenuated at higher chromophore loading then 40%. The temporal stability of the EO activity of the guest-host polymer was evaluated by probing the decay of the orientational order of the chromophores in the polymer system.

EFFECT OF A SI LAYER ON THE SUPERCONDUCTIVE PROPERTIES OF A BIPBSRCACUO THIN-FILM

The Pb-doped BiSrCaCuO superconducting films were grown by the single source mixed evaporation technique. The microbridges of dimensions 50 mum x 40 mum were fabricated by standard photolithography technologies. Si films with a thickness of 2500 angstrom were deposited on the microbridge area surfaces of BiPbSrCaCuO superconducting films by rf-magnetron sputtering. A greatly lowered zero resistance temperature of the microbridge area of the BiPbSrCaCuO film after Si sputtering was found. A non-linear effect of the current-voltage (I-V) characteristics at 78 K was shown. The high-frequency capacitance-voltage (C-V) curve of this structure at 78 K was symmetrical with the maximum capacitance at V = 0, and the capacitance decreased with increasing applied bias voltage. Afl experimental results are discussed.

Synthesis and luminescence properties of hybrid organic-inorganic transparent titania thin film activated by in-situ formed lanthanide complexes

Stable transparent titania thin films were fabricated at room temperature by combining thenoyltrifluoroacetone (TTFA)-modified titanium precursors with amphiphilic triblock poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO-PPO-PEO, P123) copolymers. The obtained transparent titania thin films were systematically investigated by IR spectroscopy, PL emission and excitation spectroscopy and transmission electron microscopy. IR spectroscopy indicates that TTFA coordinates the titanium center during the process of hydrolysis and condensation. Luminescence spectroscopy confirms the in-situ formation of lanthanide complexes in the transparent titania thin film.

Properties of poly(sodium 4-styrenesulfonate)-ionic liquid composite film and its application in the determination of trace metals combined with bismuth film electrode

A new kind of bismuth film modified electrode to sensitively detect trace metal ions based on incorporating highly conductive ionic liquids 1-butyl-3-methyl-imidazolium hexafluorophosphate (BMIMPF6) in solid matrices at glassy carbon (GC) was investigated. Poly(sodium 4-styrenesulfonate) (PSS), silica, and Nafion were selected as the solid matrices. The electrochemical properties of the mixed films modified GC were evaluated. The electron transfer rate of Fe(CN)(6)(4-)/Fe(CN)(6)(3-) can be effectively improved at the PSS-BMIMPF6 modified GC.

Tris(2,2 '-bipyridyl) ruthenium(II) doped silica film modified indium tin oxide electrode and its electrochemiluminescent properties

An approach was reported to synthesize silica hybridized ruthenium bipyridyl complex through amidation reaction by covalent attachment of bis(bipyridyl)-4,4'-dicarboxy-2,2'-bipyridyl-ruthenium to (3-aminopropyl)-triethoxysilane. The hybrid complex then was gelatinized through acid catalytic hydrolysis method and a sol-gel modified indium, tin oxide electrode was prepared via spin coating technique. As prepared indium tin oxide electrode possesses good stability therein with excellent electrochemiluminescence behavior.

Two- and three-dimensional Au nanoparticle/CoTMPyP self-assembled nanotructured materials: Film structure, tunable electrocatalytic activity, and plasmonic properties

Two- and three-dimensional Au nanoparticle/[tetrakis(N-methylpyridyl)porphyrinato]cobalt (CoTMPyP) nanostructured materials were prepared by "bottom-up" self-assembly. The electrocatalytic and plasmonic properties of the Au nanoparticle/CoTMPyP self-assembled nanostructured materials (abbreviated as Au/CoTMPyP SANMs) are tunable by controlled self-assembly of the An nanoparticles and CoTMPyP on indium tin oxide (ITO) electrode. The electrocatalytic activity of the Au/CoTMPyP SANMs can be tuned in two ways. One way is that citrate-stabilized An nanoparticles are positioned first on ITO surface with tunable number density, and then positively charged CoTMPyP ions are planted selectively on these gold sites. The other way is that An nanoparticles and CoTMPyP are deposited by virtue of layer-by-layer assembly, which can also tune the amount of the as-deposited electrocatalysts. FE-SEM studies showed that three-dimensional SANMs grow in the lateral expansion mode, and thermal annealing resulted in both surface diffusion of nanoparticles and atomic rearrangement to generate larger gold nanostructures with predominant (I 11) facets.

Fabrication and luminescent properties of rare earths-doped Gd-2(WO4)(3) thin film phosphors by Pechini sol-gel process

Rare earth ions (Eu3+ and Dy3+)-doped Gd-2(WO4)(3) phosphor films were prepared by a Pechini sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM) and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting powders and films. The results of XRD indicate that the films begin to crystallize at 600degreesC and the crystallinity increases with the elevation of annealing temperatures. The film is uniform and crack-free, WO(4)(2-)mainly consists of closely packed fine particles with an average grain size of 80 nm. Owing to an energy transfer from 4 groups, the rare earth ions show their characteristic emissions in crystalline Gd-2(WO4)(3) phosphor films, i.e., D-5(J) -F-7(J), (J = 0, 1, 2, 3; J' = 0 1, 2, 3, 4, not in all cases) transitions for Eu3+ and F-4(9/2)-H-6(J) (J = 13/2, 15/2) transitions for D Y3+, with the hypersensitive transitions D-5(0)-F-7(2) (Eu3+) and F-4(9/2) - H-6(13/2) (Dy3+) being the most prominent groups, respectively.