Étude, par principes premiers, des effets de la corrélation entre électrons sur les propriétés électroniques et magnétiques de polymères pontés et de supraconducteurs à haute température critique

La présente thèse traite de la description de systèmes complexes, notamment des polymères et des cuprates, par la théorie de la fonctionnelle de la densité. En premier lieu, la théorie de la fonctionnelle de la densité ainsi que différentes fonctionnelles utilisées pour simuler les matériaux à l’étude sont présentées. Plus spécifiquement, les fonctionnelles LDA et GGA sont décrites et leurs limites sont exposées. De plus, le modèle de Hubbard ainsi que la fonctionnelle LDA+U qui en découle sont abordés dans ce chapitre afin de permettre la simulation des propriétés de matériaux à forte corrélation électronique. Par la suite, les résultats obtenus sur les polymères sont résumés par deux articles. Le premier traite de la variation de la bande interdite entre les polymères pontés et leurs homologues non pontés. Le second se penche sur l’étude de polymères à faible largeur de bande interdite. Dans ce dernier, il sera démontré qu’une fonctionnelle hybride, contenant de l’échange exact, est nécessaire afin de décrire les propriétés électroniques des systèmes à l’étude. Finalement, le dernier chapitre est consacré à l’étude des cuprates supraconducteurs. La LDA+U pouvant rendre compte de la forte localisation dans les orbitales 3d des atomes de cuivre, une étude de l’impact de cette fonctionnelle sur les propriétés électroniques est effectuée. Un dernier article investiguant différents ordres magnétiques dans le La2CuO4 dopé termine le dernier chapitre. On trouve aussi, en annexe, un complément d’information pour le second article et une description de la théorie de la supraconductivité de Bardeen, Cooper et Schrieffer.

Etudes ab initio des effets de la température sur le spectre optique des semi-conducteurs

Thèse réalisée en cotutelle avec l'Université Catholique de Louvain (Belgique)

Synthèse de nouveaux matériaux conducteurs comportant des unités aromatiques conjuguées et analyse de leurs propriétés physico-chimiques

Les matériaux conjugués ont fait l’objet de beaucoup de recherches durant les dernières années. Les nouveaux matériaux présentent des propriétés intéressantes que ce soit au niveau optique, électrique, mécanique ou même les trois en même temps. La synthèse reste la difficulté principale dans la fabrication de dispositifs électroniques. Les méthodes utilisées pour y parvenir sont l’électropolymérisation, le couplage de Suzuki ou de Wittig. Ces techniques comportent encore de nombreuses contraintes et s’avèrent difficilement réalisables à grande échelle. Les thiophènes, les pyrroles et les furanes ont démontré une bonne conductibilité et une bande de conduction basse due à une conjugaison accrue. L’objectif ici est de synthétiser des oligomères principalement composés de thiophènes dans le but d’en caractériser les propriétés spectroscopiques, électrochimiques et de conduction. La synthèse est souvent l’étape délicate de la fabrication de matériaux conjugués. Nous présentons ici une méthode de synthèse simple par modules avec des unités hétérocycliques. Les modules complémentaires sont attachés par condensation entre un aldéhyde et une amine menant à la formation d’un lien robuste, l’azomethine. Les résultats des propriétés photophysiques et électrochimiques de ces matériaux conjugués seront présentés. En ayant recours à différents groupes électrodonneurs et électroaccepteurs, en variant le degré de conjugaison ou en utilisant différents hétérocycles, les propriétés spectroscopiques, électrochimiques et de bande de conduction peuvent être adaptées à volonté, ce qui en fait des matériaux aux propriétés modelables. Ces nouvelles molécules seront analysées pour en déceler les propriétés recherchées dans la fabrication d’OLED. Nous explorerons les domaines de l’oxidation electrochimique réversible et de la polymérisation menant à la fabrication de quelques prototypes simples.

Calculs ab initio de structures électroniques pour un meilleur design de polymères photovoltaïques

La présente thèse porte sur l'utilité de la théorie de la fonctionnelle de la densité dans le design de polymères pour applications photovoltaïques. L'étude porte d'abord sur le rôle des calculs théoriques pour la caractérisation des polymères dans le cadre de collaborations entre la théorie et l'expérience. La stabilité et les niveaux énergétiques de certaines molécules organiques sont étudiés avant et après la sulfuration de leurs groupements carbonyles, un procédé destiné à diminuer le band gap. Les propriétés de dynamique électronique, de séparation des porteurs de charges et de spectres de vibrations Raman sont également explorées dans un polymère à base de polycarbazole. Par la suite, l'utilité des calculs théoriques dans le design de polymères avant leurs synthèses est considérée. La théorie de la fonctionnelle de la densité est étudiée dans le cadre du modèle de Scharber afin de prédire l'efficacité des cellules solaires organiques. Une nouvelle méthode de design de polymères à faible band gaps, basée sur la forme structurale aromatique ou quinoide est également présentée, dont l'efficacité surpasse l'approche actuelle de donneur-accepteur. Ces études sont mises à profit dans l'exploration de l'espace moléculaire et plusieurs candidats de polymères aux propriétés électroniques intéressantes sont présentés.

Preparation and characterisation of certain II-VI, I-III-VI2 semiconductor thin films and transparent conducting oxides

There is an increasing demand for renewable energies due to the limited availability of fossil and nuclear fuels and due to growing environmental problems. Photovoltaic (PV) energy conversion has the potential to contribute significantly to the electrical energy generation in the future. Currently, the cost for photovoltaic systems is one of the main obstacles preventing production and application on a large scale. The photovoltaic research is now focused on the development of materials that will allow mass production without compromising on the conversion efficiencies. Among important selection criteria of PV material and in particular for thin films, are a suitable band gap, high absorption coefficient and reproducible deposition processes capable of large-volume and low cost production. The chalcopyrite semiconductor thin films such as Copper indium selenide and Copper indium sulphide are the materials that are being intensively investigated for lowering the cost of solar cells. Conversion efficiencies of 19 % have been reported for laboratory scale solar cell based on CuInSe2 and its alloys. The main objective of this thesis work is to optimise the growth conditions of materials suitable for the fabrication of solar cell, employing cost effective techniques. A typical heterojunction thin film solar cell consists of an absorber layer, buffer layer and transparent conducting contacts. The most appropriate techniques have been used for depositing these different layers, viz; chemical bath deposition for the window layer, flash evaporation and two-stage process for the absorber layer, and RF magnetron sputtering for the transparent conducting layer. Low cost experimental setups were fabricated for selenisation and sulphurisation experiments, and the magnetron gun for the RF sputtering was indigenously fabricated. The films thus grown were characterised using different tools. A powder X-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive X-ray analysis (EDX) and scanning electron microscopy i (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UV-Vis-NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using the two probe and four probe electrical measurements. Nature of conductivity of the films was determined by thermoprobe and thermopower measurements. The deposition conditions and the process parameters were optimised based on these characterisations.

Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Electrical and Optical Properties of Znga2o4 Thin Films Deposited By Pulsed Laser Deposition

ZnGa2O4 spinel is a promising new UV transparent electronic conductor. Enhancing the electrical conductivity of this potential oxide phosphor can make it a promising transparent conducting oxide. In this paper, we have investigated the effects of processing and doping on the conductivity of semiconducting ZnGa2O4, particularly thin films. Crystalline zinc gallate thin films have been deposited on fused quartz substrates employing the pulsed laser deposition (PLD) technique at room temperature for an oxygen partial pressure of 0.1 Pa (0.001mbar). The films were found to be UV transparent, the band gap of which shifted to 4.75eV on hydrogen annealing. The band gap of the oxygen stoichiometric bulk powder samples (4.55eV) determined from diffuse reflection spectrum (DRS) shifted to 4.81eV on reduction in a hydrogen atmosphere. The electrical conductivity improved when Sn was incorporated into the ZnGa2O4 spinel. The conductivity of ZnGa2O4:Sn thin films was further improved on reduction.

Synthesis of ZnO nanoparticles by hydrothermal method

Stable, OH free zinc oxide (ZnO) nanoparticles were synthesized by hydrothermal method by varying the growth temperature and concentration of the precursors. The formation of ZnO nanoparticles were confirmed by x-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) studies. The average particle size have been found to be about 7-24 nm and the compositional analysis is done with inductively coupled plasma atomic emission spectroscopy (ICP-AES). Diffuse reflectance spectroscopy (DRS) results shows that the band gap of ZnO nanoparticles is blue shifted with decrease in particle size. Photoluminescence properties of ZnO nanoparticles at room temperature were studied and the green photoluminescent emission from ZnO nanoparticles can originate from the oxygen vacancy or ZnO interstitial related defects.

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.

Optical and electrical properties of co-sputtered amorphous transparent conducting zinc indium tin oxide thin films

Highly conductive and transparent thin films of amorphous zinc indium tin oxide are prepared at room temperature by co-sputtering of zinc 10 oxide and indium tin oxide. Cationic contents in the films are varied by adjusting the power to the sputtering targets. Optical transmission study of 11 films showed an average transmission greater than 85% across the visible region. Maximum conductivity of 6×102 S cm−1 is obtained for Zn/In/ 12 Sn atomic ratio 0.4/0.4/0.2 in the film. Hall mobility strongly depends on carrier concentration and maximum mobility obtained is 18 cm2 V−1 s−1 13 at a carrier concentration of 2.1×1020 cm−3. Optical band gap of films varied from 3.44 eV to 3 eV with the increase of zinc content in the film 14 while the refractive index of the films at 600 nm is about 2.0.

A Novel Method for Switching and Tuning of PBG Structures

Photonic band-gap (PBG) structures are utilized in microwave components as filters to suppress unwanted signals. In this work, rectangular perforations were created in the ground plane of a microstrip line to construct a PBG structure. A gold-coated alumina substrate was utilized to switch or tune the bandstop characteristics of this structure. It was demonstrated that the bandstop characteristics were switched off from - 35 to - 1 dB at 16 GHz. Tuning of the bandstop edge with a shift of 1.5 GHz was also shown

Physical and optical properties of phthalocyanine doped inorganic glasses

Physical and optical properties of various free base and metallic phthalocyanine (Pc) doped glass matrix are reported for the first time. Absorption spectral measurements of H2Pc, MnPc, NiPc, CoPc, CuPc, MoOPc, ZnPc and FePc doped borate glass matrix have been made in the 200–1100 nm region and the spectra obtained are analyzed in the 2.1–6.2 eV region to obtain the optical band gap (Eg) and the width of the band tail (Et). Other important optical and physical parameters viz. refractive index (n), molar extinction coefficient ("), density (½), glass transition temperature (Tg), molecular concentration (N ), polaron radius (rp), intermolecular separation (R), molar refractivity (Rm) are also reported

Physical and optical properties of phthalocyanine doped inorganic glasses

Physical and optical properties of various free base and metallic phthalocyanine (Pc) doped glass matrix are reported for the first time. Absorption spectral measurements of H2Pc, MnPc, NiPc, CoPc, CuPc, MoOPc, ZnPc and FePc doped borate glass matrix have been made in the 200–1100 nm region and the spectra obtained are analyzed in the 2.1–6.2 eV region to obtain the optical band gap (Eg) and the width of the band tail (Et). Other important optical and physical parameters viz. refractive index (n), molar extinction coefficient ("), density (½), glass transition temperature (Tg), molecular concentration (N ), polaron radius (rp), intermolecular separation (R), molar refractivity (Rm) are also reported.

Physical and optical properties of phthalocyanine doped inorganic glasses

Physical and optical properties of various free base and metallic phthalocyanine (Pc) doped glass matrix are reported for the first time. Absorption spectral measurements of H2Pc, MnPc, NiPc, CoPc, CuPc, MoOPc, ZnPc and FePc doped borate glass matrix have been made in the 200–1100 nm region and the spectra obtained are analyzed in the 2.1–6.2 eV region to obtain the optical band gap (Eg) and the width of the band tail (Et). Other important optical and physical parameters viz. refractive index (n), molar extinction coefficient ("), density (½), glass transition temperature (Tg), molecular concentration (N ), polaron radius (rp), intermolecular separation (R), molar refractivity (Rm) are also reported.

Spectral and Nonlinear Optical Characteristics of ZnO Nanocomposites

The spectral and nonlinear optical properties of ZnO based nanocomposites prepared by colloidal chemical synthesis are investigated. Very strong UV emissions are observed from ZnO–Ag, ZnO– Cu and ZnO–SiO2 nanocomposites. The strongest visible emission of a typical ZnO–Cu nanocomposite is over ten times stronger than that of pure Cu due to transition from deep donor level to the copper induced level. The optical band gap of ZnO–CdS and ZnO–TiO2 nanocomposites is tunable and emission peaks changes almost in proportion to changes in band gap. Nonlinear optical response of these nanocomposites is studied using nanosecond laser pulses from a tunable laser in the wavelength range of 450–650 nm at resonance and off-resonance wavelengths. The nonlinear response is wavelength dependent and switching from RSA to SA has been observed at resonant wavelengths. Such a change-over is related to the interplay of plasmon/exciton band bleach and optical limiting mechanisms. The observed nonlinear absorption is explained through two photon absorption followed by weak free carrier absoption, interband absorption and nonlinear scattering mechanisms. The nonlinearity of the silica colloid is low and its nonlinear response can be improved by making composites with ZnO and ZnO–TiO2. The increase of the third-order nonlinearity in the composites can be attributed to the enhancement of exciton oscillator strength. This study is important in identifying the spectral range and the composition over which the nonlinear material acts as an RSA based optical limiter. These nanocomposites can be used as optical limiters and are potential materials for the light emission and for the development of nonlinear optical devices with a relatively small limiting threshold.