951 resultados para COMPOUND SEMICONDUCTORS
Resumo:
Two topical subjects related with the effect of magnetic field on electrical conduction and the metal-insulator transition are discussed. The first topic is an electronic phase transition in graphite, which is interpreted as a manifestation of a nestingtype instability inherent to a one-dimensional narrow Landau sub-band. The second topic is spin-dependent tranport in III-V based diluted magnetic semiconductors; in particular, a large negative magnetoresistance observed in the vicinity of metal-nonmetal transition.
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In this paper the effects of constant and cyclic power loads on the evolution of interfacial reaction layers in lead-free solder interconnections are presented. Firstly, the differences in the growth behavior of intermetallic compound (IMC) layers at the cathode and anode sides of the interconnections are rationalized. This is done by considering the changes in the intrinsic fluxes of elements owing to electromigration as well as taking into account the fact that the growth of Cu3Sn and Cu6Sn5 are coupled via interfacial reactions. In this way, better understanding of the effect of electron flux on the growth of each individual layer in the Cu-Sn system can be achieved. Secondly, it is shown that there is a distinct difference between steady-state current stressing (constant current, constant temperature) and power cycling with alternating on- and off-cycle periods (accompanied by a change of temperature). The reasons behind the observed differences are subsequently discussed. Finally, special care is taken to ensure that the current densities are chosen in such a way that there is no risk for even partial melting of the solder interconnections.
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Natural products discovered from medicinal plants have played an important role in the treatment of cancer. In an effort to identify novel small molecules which can affect the proliferation of lymphoma cells, we tested methyl angolensate (MA), a plant derived tetranortriterpenoid, purified from the crude extract of the root callus of Soymida febrifuga commonly known as Indian red wood tree. We have tested MA for its cytotoxic properties on Burkitt's lymphoma cell lines, using various cellular assays. We observed that MA induces cytotoxicity in Daudi cells in a dose-dependent manner using trypan blue, MTT and LDH assays. We find that the treatment with MA led to activation of DNA double-strand break repair proteins including KU70 and KU80, suggesting the activation of nonhomologous DNA end joining pathway in surviving cells. Further, we find that methyl angolensate could induce apoptosis by cell cycle analysis, annexin V-FITC staining, DNA fragmentation and PARP cleavage. Besides, MA treatment led to reactive oxygen species generation and loss of mitochondrial transmembrane potential. These results suggest the activation of mitochondrial pathway of apoptosis. Hence, we identify MA as a potential chemotherapeutic agent against Daudi cells.
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We report an anomalous magnetostriction behavior of the charge ordered compound Nd0.5Sr0.5MnO3. We have found that the applied magnetic field not only gives rise to a large negative magnetoresistance but also produces a huge positive magnetovolume effect. This unusual effect is explained considering that the applied magnetic field induces a structural transition at which the volume drastically increases. This effect is also seen in the anisotropic magnetostriction which shows clear anomalies at the field induced transition.
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Heavily Mn-doped II-VI-V-2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositing Mn on single crystalline substrate at nearly 400 T in an ultra high vacuum chamber. Well-defined ferromagnetic hysteresis with a saturation behavior appears in the magnetization curve up to above room temperature. The chemical states of the ZDGeP(2):Mn interface has been clarified by a careful in situ photoemission spectroscopy. The as-prepared surface consists of Ge-rich, metallic Mn compound. In and below the sub-surface region, dilute divalent Mn species as precursors of the DMS phase exist. No MnP phase was observed at any stage of the depth profile. Theoretical band-calculation suggests that the system with vacancies (Cd, V-c, Mn)GeP2 or a non-stoichiometric (Cd, Ge, Mn)GeP2 are ferromagnetic and energetically stable although ferromagnetism is not stable in a stoichiometric compound (Cd, Mn)GeP2. (C) 2003 Elsevier Ltd. All rights reserved.
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Electrical resistivity studies of the charge transfer complex benzidine—TCNQ and its inclusion compound, have been carried out up to pressures 8 GPa. Two types of behaviour were observed in these complexes under high pressure and this difference is interpreted and discussed.
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An experimental setup has been realized to measure weak magnetic moments which can be modulated at radio frequencies (similar to 1-5 MHz). Using an optimized radio-frequency (RF) pickup coil and lock-in amplifier, an experimental sensitivity of 10(-15) Am(2) corresponding to 10(-18) emu has been demonstrated with a 1 s time constant. The detection limit at room temperature is 9.3 x 10(-16) Am(2)/root Hz limited by Johnson noise of the coil. The setup has been used to directly measure the magnetic moment due to a small number (similar to 7 x 10(8)) of spin polarized electrons generated by polarization modulated optical radiation in GaAs and Ge. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3654229]
Resumo:
Stable and highly reproducible current‐limiting characteristics are observed for polycrystalline ceramics prepared by sintering mixtures of coarse‐grained, donor‐doped BaTiO3 (tetragonal) as the major phase and ultrafine, undoped cubic perovskite such as BaSnO3, BaZrO 3, SrTiO3, or BaTiO3 (cubic). The linear current‐voltage (I‐V) relation changes over to current limiting as the field strength increases, when thermal equilibrium is attained. The grain‐boundary layers with low donor and high Sn, Zr, or Sr have depleted charge carrier density as compared to that in the grain bulk. The voltage drop at the grain‐boundary layers diminishes the temperature gradient between the interior and surface regions.
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Rapid solidification of Ag‐53 at. % Se alloy resulted in the formation of a composite mixture of Ag2.5Se and Se. The microstructure consists of spherical Se grains of 2–20 μm size, randomly distributed in a matrix of Ag2.5 Se. The Se grains were found to be layered hexagonal while the Ag2.5 Se had an orthorhombic crystal structure. The unit cell size of this phase, however, was twice that reported for the equilibrium orthorhombic Ag2 Se compound. The conductivity σ variation with temperature in the range 80–320 K was found to be similar to that observed in degenerate semiconductors. The σ decreased from 295 Ω−1 cm−1 at room temperature to a saturation value of 70 Ω−1 cm−1 for temperatures <80 K. The results are discussed in terms of percolation conduction in the Ag2.5 Se phase.
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Thin films of Ti62.5Si37.5 composition were deposited by the pulsed-laser ablation technique on single-crystal Nad substrates at room temperature and on ′single-crystal′ superalloy substrates at elevated temperatures. Both vapour and liquid droplets generated by pulsed-laser ablation of the target become quenched on the substrate. Amorphization had taken place in the process of quenching of vapour-plasma as well as small liquid droplets on NaCl substrates at room temperature. In addition to the formation of Ti5Si3, a metastable fcc phase (a 0 = 0.433 nm) also forms in micron-sized large droplets as well as in the medium-sized submicron droplets. The same metastable fcc phase nucleates during deposition from the vapour state at 500°C and at 600°C on a superalloy substrate as well as during crystallization of the amorphous phase. The evolution of the metastable fcc phase in the Ti-Si system during non-equilibrium processing is reported for the first time.
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An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism. It has been found, taking InAs and InSb as examples, that the EEM in Qws, ILs and superlattices increases with increasing concentration, light intensity and wavelength of the incident light waves, respectively and the numerical magnitudes in each case is band structure dependent. The EEM in ILs is quantum number dependent exhibiting quantum jumps for specified values of the surface electric field and in NIPI superlattices; the same is the function of Fermi energy and the subband index characterizing such 2D structures. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the EEM varies in various manners with all the variables as evident from all the curves, the rates of variations totally depend on the specific dispersion relation of the particular 2D structure. Under certain limiting conditions, all the results as derived in this paper get transformed into well known formulas of the EEM and the electron statistics in the absence of external photo-excitation and thus confirming the compatibility test. The results of this paper find three applications in the field of microstructures. (C) 2011 Elsevier Ltd. All rights reserved.
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A facile method of solution combustion was used to synthesize a new solid solution Bi2Ce2O7. The structure was determined from powder X-ray diffraction (PXRD) and found to crystallize in the space group Fm (3) over barm with cell parameter a = 5.46936(9) angstrom. The particle sizes varied from 5 to 6 nm. The degradation of cationic dye malachite green (MG) was investigated under solar radiation as the band gap of the material is 2.34 eV.
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Herein, a new aromatic carboxylate ligand, namely, 4-(dipyridin-2-yl)aminobenzoic acid (HL), has been designed and employed for the construction of a series of lanthanide complexes (Eu3+ = 1, Tb3+ = 2, and Gd3+ = 3). Complexes of 1 and 2 were structurally authenticated by single-crystal X-ray diffraction and were found to exist as infinite 1D coordination polymers with the general formulas {Eu(L)(3)(H2O)(2)]}(n) (1) and {Tb(L)(3)(H2O)]center dot(H2O)}(n) (2). Both compounds crystallize in monoclinic space group C2/c. The photophysical properties demonstrated that the developed 4-(dipyridin-2-yl)aminobenzoate ligand is well suited for the sensitization of Tb3+ emission (Phi(overall) = 64%) thanks to the favorable position of the triplet state ((3)pi pi*) of the ligand the energy difference between the triplet state of the ligand and the excited state of Tb3+ (Delta E) = (3)pi pi* - D-5(4) = 3197 cm(-1)], as investigated in the Gd3+ complex. On the other hand, the corresponding Eu3+ complex shows weak luminescence efficiency (Phi(overall) = 7%) due to poor matching of the triplet state of the ligand with that of the emissive excited states of the metal ion (Delta E = (3)pi pi* - D-5(0) = 6447 cm(-1)). Furthermore, in the present work, a mixed lanthanide system featuring Eu3+ and Tb3+ ions with the general formula {Eu0.5Tb0.5(L)(3)(H2O)(2)]}(n) (4) was also synthesized, and the luminescent properties were evaluated and compared with those of the analogous single-lanthanide-ion systems (1 and 2). The lifetime measurements for 4 strongly support the premise that efficient energy transfer occurs between Tb3+ and Eu3+ in a mixed lanthanide system (eta = 86%).
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The scattering of carriers by charged dislocations in semiconductors is studied within the framework of the linearized Boltzmann transport theory with an emphasis on examining consequences of the extreme anisotropy of the cylindrically symmetric scattering potential. A new closed-form approximate expression for the carrier mobility valid for all temperatures is proposed. The ratios of quantum and transport scattering times are evaluated after averaging over the anisotropy in the relaxation time. The value of the Hall scattering factor computed for charged dislocation scattering indicates that there may be a factor of two error in the experimental mobility estimates using the Hall data. An expression for the resistivity tensor when the dislocations are tilted with respect to the plane of transport is derived. Finally, an expression for the isotropic relaxation time is derived when the dislocations are located within the sample with a uniform angular distribution.
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We present optical studies of both singlet and triplet states of a ladder-type conjugated polymer as a function of hydrostatic pressure. The pressure coefficient of the triplet-triplet absorption is smaller compared to the pressure coefficient of the singlet excitation, highlighting the more localized nature of triplet excitons. The photoluminescence and phosphorescence energies red-shift at similar rates with increasing pressure, thus giving experimental evidence for the first time that the singlet-triplet splitting remains almost a constant under high pressure until 4GPa. The diffusion length of the triplet excitons decreases to a few hundred nm at high pressures, as compared with a few micrometers at atmospheric pressure. Copyright (C) EPLA, 2013