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制备了掺Er¨ 和Er¨/Yb¨共掺的可用于EDWA(掺铒波导放大器)的Na20.B,0 .SiO, 玻璃.吸收光谱特性表明:不同掺杂Er20 浓度基础玻璃峰位置基本相同,但玻璃在相同波长处的 吸收率随着Er203浓度的增加而增大;光敏剂Yb 0 的加入明显增大了样品在978 nm处的吸收面 积;荧光光谱特性表明:随着Er O 浓度的增加玻璃在1536 nm处的荧光半高宽(FWHM)由80 nm 减小到40 nm,从而确定本体系的Er20 掺杂浓度为0.2 mo1% 左右较好.

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This paper proposes a novel single electron random number generator (RNG). The generator consists of multiple tunneling junctions (MTJ) and a hybrid single electron transistor (SET)/MOS output circuit. It is an oscillator-based RNG. MTJ is used to implement a high-frequency oscillator,which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift. The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator. The RNG circuit generates high-quality random digital sequences with a simple structure. The operation speed of this circuit is as high as 1GHz. The circuit also has good driven capability and low power dissipation. This novel random number generator is a promising device for future cryptographic systems and communication applications.

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从器件制作角度入手,对基于Ⅲ族氮化物的功率型蓝光LEDs结构和电极体系进行了优化设计。采用梳状结构、高反电极体系及倒装焊技术,研制出大功率蓝光LEDs,在350mA工作电流下,工作电压为3.3~3.5V,输出功率达137.71mW,反向5V电压下的漏电流小于1μA。

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A flash-lamp-pumped Nd

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半导体纳米材料是纳米材料的一个重要组成部分,纳米结构的电子和光子器件将成为下一代微电子和光电子器件的核心。文章介绍了半导体纳米材料的新进展,包括四个方面:半导体自组织生长量子点,纳米晶体,微腔光子晶体和纳米结构中的自旋电子学。本世纪开始的半导体纳米材料的是上世纪半导体超晶格量子阱研究的延续,同时双开辟了一些新领域,如:单电子的电子学、单光子的光子学,微腔和光子晶体,稀磁半导体和自旋电子的相干输运等,这些研究将为研制在新原理基础上的新器件和实现量子计算、量子通信打下基础。

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代数免疫阶是针对代数攻击而提出的新的密码准则。为了抵抗代数攻击,流密码中所使用的Boole函数应该具有高代数免疫阶。文中运用替换掉Dalai所构造的代数免疫对称Boole函数支撑集中一些点的方法构造了大量具有最高代数免疫阶的Boole函数,并给出了所构造函数的计数。特别地,对于某些代数次数低于n/2的多项式p(x),构造了代数标准形中单项式系数都不小于n/2的q(x)使得p(x)+q(x)具有最高代数免疫阶。