Three-dimensional localization of multiple acoustic sources in shallow ocean with non-Gaussian noise

In this paper, a low-complexity algorithm SAGE-USL is presented for 3-dimensional (3-D) localization of multiple acoustic sources in a shallow ocean with non-Gaussian ambient noise, using a vertical and a horizontal linear array of sensors. In the proposed method, noise is modeled as a Gaussian mixture. Initial estimates of the unknown parameters (source coordinates, signal waveforms and noise parameters) are obtained by known/conventional methods, and a generalized expectation maximization algorithm is used to update the initial estimates iteratively. Simulation results indicate that convergence is reached in a small number of (<= 10) iterations. Initialization requires one 2-D search and one 1-D search, and the iterative updates require a sequence of 1-D searches. Therefore the computational complexity of the SAGE-USL algorithm is lower than that of conventional techniques such as 3-D MUSIC by several orders of magnitude. We also derive the Cramer-Rao Bound (CRB) for 3-D localization of multiple sources in a range-independent ocean. Simulation results are presented to show that the root-mean-square localization errors of SAGE-USL are close to the corresponding CRBs and significantly lower than those of 3-D MUSIC. (C) 2014 Elsevier Inc. All rights reserved.

3-D GPU Based Real Time Diffuse Optical Tomographic System

3-Dimensional Diffuse Optical Tomographic (3-D DOT) image reconstruction algorithm is computationally complex and requires excessive matrix computations and thus hampers reconstruction in real time. In this paper, we present near real time 3D DOT image reconstruction that is based on Broyden approach for updating Jacobian matrix. The Broyden method simplifies the algorithm by avoiding re-computation of the Jacobian matrix in each iteration. We have developed CPU and heterogeneous CPU/GPU code for 3D DOT image reconstruction in C and MatLab programming platform. We have used Compute Unified Device Architecture (CUDA) programming framework and CUDA linear algebra library (CULA) to utilize the massively parallel computational power of GPUs (NVIDIA Tesla K20c). The computation time achieved for C program based implementation for a CPU/GPU system for 3 planes measurement and FEM mesh size of 19172 tetrahedral elements is 806 milliseconds for an iteration.

Elastodynamic stress intensity factor history for a semi-infinite crack under three-dimensional transient loading

The dynamic stress intensity factor history for a semi-infinite crack in an otherwise unbounded elastic body is analyzed. The crack is subjected to a pair of suddenly-applied point loadings on its faces at a distance L away from the crack tip. The exact expression for the mode I stress intensity factor as a function of time is obtained. The method of solution is based on the direct application of integral transforms, the Wiener-Hopf technique and the Cagniard-de Hoop method. Due to the existence of the characteristic length in loading this problem was long believed a knotty problem. Some features of the solutions are discussed and graphical result for numerical computation is presented.

Cruise 3 of the N. B. Scofield for 1951. Cruise Report 51-S-3

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Cruise 3 of the N. B. Scofield for 1952. Cruise Report 52-S-3

(PDF contains 3 pages.)

Cruise Report 66-S-3

(PDF contains 3 pages.)

TeO2-Nb2O5-YF3玻璃系统的形成区及性质研究

制备了一种新型的氧卤碲酸盐玻璃：TeO2-Nb2O5-YF3,给出并研究了TeO2-Nb2O5-YF3三元系统的玻璃形成范围。测试了玻璃的密度、折射率、差热(DTA)、拉曼光谱、红外透射光谱以及紫外吸收光谱,通过光谱分析研究了组分含量的变化对玻璃结构及红外透射特性的影响。实验结果表明,TeO2-Nb2O5-YF3玻璃系统具有优良的成玻璃性能和热稳定性等特性,而且在2.8～3.3 μm区域内无明显的[OH]基团吸收,在中红外3～5 μm区域具有优良透射性能,因此在中红外透射方面具有潜在应用价值。

飞秒激光脉冲照射诱导含芴结构树脂共聚物结构变化及机理的研究

在室温下用聚焦的飞秒激光照射高折射率、低双折射的透明含芴结构树脂-对苯二甲酸乙二醇酯(PET)共聚物，探索飞秒激光制备高分子光学功能微结构的可能性。通过紫外-可见吸收光谱、红外光谱、电子自旋共振谱、光学显微镜、扫描电镜及透射电镜等分析手段，对该材料在飞秒激光照射后的结构变化及机理进行研究。结果发现：含芴结构树脂共聚物在飞秒激光照射后产生化学键断裂，生成未成对电子，并形成无定形碳；照射区在可见光区域的吸收增强；随激光能量密度的减少在激光会聚点附近诱导结构由慧尾状向单一细丝转变。演示了三维着色内雕。

A method for analyzing the coupling of 3-D tapered rib waveguides with fibers

The fields in 3-dimensional tapered waveguides are unstable compared with the fields in the straight waveguides. In the case of waveguide-to-fiber coupling and fiber-to-waveguide coupling, a sequence of short straight waveguides has been modeled to approximate the 3-dimensional tapered waveguide; and the unstable incident and reflected fields, as well as their derivatives, were determined by the beam propagation method(BPM). Then free space radiation mode(FSRM) was employed to calculate the reflected and transmitted powers. Analysis results of the coupling of fiber with silicon-on-insulator(SOI) tapered rib waveguides showed the feasibility of the method.

Self-organization of wire-like InAs nanostructures on InP

The initial InAs growth on InP(1 0 0) during molecular beam epitaxy has been investigated. The as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3-6 monolayer InAs deposition range. The wires were oriented along the [(1) over bar 1 0] direction. Transmission electron microscopy images confirm that the wires are coherently grown on the substrates. Our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized InAs nanowires. (C) 1999 Elsevier Science B.V. All rights reserved.

Structural and optical characterization of InAs nanostructures grown on high-index InP substrates

The structural and optical properties of InAs layers grown on high-index InP surfaces by molecular beam epitaxy are investigated in order to understand the self-organization of quantum dots and quantum wires on novel index surfaces. Four different InP substrate orientations have been examined, namely, (1 1 1)B, (3 1 1)A, and (3 1 1)B and (1 0 0). A rich variety of InAs nanostructures is formed on the surfaces. Quantum wire-like morphology is observed on the (1 0 0) surface, and evident island formation is found on (1 1 1)A and (3 1 1)B by atomic force microscopy. The photoluminescence spectra of InP (1 1 1)A and (3 1 1)B samples show typical QD features with PL peaks in the wavelength range 1.3-1.55 mu m with comparable efficiency. These results suggest that the high-index substrates are promising candidates for production of high-quality self-organized QD materials for device applications. (C) 1999 Elsevier Science B.V. All rights reserved.

Size quantization effects in InAs self-assembled islands on InP(001) at the onset of 2D-to-3D transition

Photoluminescence spectroscopy has been used to investigate self-assembled InAs islands in InAlAs grown on InP(0 0 1) by molecular beam epitaxy, in correlation with transmission electron microscopy. The nominal deposition of 3.6 monolayers of InAs at 470 degrees C achieves the onset stage of coherent island formation. In addition to one strong emission around 0.74 eV, the sample displaces several emission peaks at 0.87, 0.92. 0.98, and 1.04 eV. Fully developed islands that coexist with semi-finished disk islands account for the multipeak emission. These results provide strong evidence of size quantization effects in InAs islands. (C) 1999 Elsevier Science B.V. All rights reserved.

Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices

With a low strained InxGa1-xAs/GaAs(x similar to 0.01) superlattice (SL) buffer layer, the crystal quality of 50 period relaxed In0.3Ga0.7As/GaAs strained SLs has been greatly improved and over 13 satellite peaks are observed from X-ray double-crystal diffraction, compared with three peaks in the sample without the buffer layer. Cross-section transmission electron microscopy reveals that the dislocations due to superlattice strain relaxation are blocked by the SLs itself and are buried into the buffer layer. The role of the SL buffer layer lies in that the number of the dislocations is reduced in two ways: (1) the island formation is avoided and (2) the initial nucleation of the threading dislocations is retarded by the high-quality growth of the SL buffer layer. When the dislocation pinning becomes weak as a result of the reduced dislocation density, the SLs can effectively move the threading dislocations to the edge of the wafer.