Numerical simulations of unsteady wet steam flows with non-equilibrium condensation in the nozzle and the steam turbine

Numerical techniques for non-equilibrium condensing flows are presented. Conservation equations for homogeneous gas-liquid two-phase compressible flows are solved by using a finite volume method based on an approximate Riemann solver. The phase change consists of the homogeneous nucleation and growth of existing droplets. Nucleation is computed with the classical Volmer-Frenkel model, corrected for the influence of the droplet temperature being higher than the steam temperature due to latent heat release. For droplet growth, two types of heat transfer model between droplets and the surrounding steam are used: a free molecular flow model and a semi-empirical two-layer model which is deemed to be valid over a wide range of Knudsen number. The computed pressure distribution and Sauter mean droplet diameters in a convergent-divergent (Laval) nozzle are compared with experimental data. Both droplet growth models capture qualitatively the pressure increases due to sudden heat release by the non-equilibrium condensation. However the agreement between computed and experimental pressure distributions is better for the two-layer model. The droplet diameter calculated by this model also agrees well with the experimental value, whereas that predicted by the free molecular model is too small. Condensing flows in a steam turbine cascade are calculated at different Mach numbers and inlet superheat conditions and are compared with experiments. Static pressure traverses downstream from the blade and pressure distributions on the blade surface agree well with experimental results in all cases. Once again, droplet diameters computed with the two-layer model give best agreement with the experiments. Droplet sizes are found to vary across the blade pitch due to the significant variation in expansion rate. Flow patterns including oblique shock waves and condensation-induced pressure increases are also presented and are similar to those shown in the experimental Schlieren photographs. Finally, calculations are presented for periodically unsteady condensing flows in a low expansion rate, convergent-divergent (Laval) nozzle. Depending on the inlet stagnation subcooling, two types of self-excited oscillations appear: a symmetric mode at lower inlet subcooling and an asymmetric mode at higher subcooling. Plots of oscillation frequency versus inlet sub-cooling exhibit a hysteresis loop, in accord with observations made by other researchers for moist air flow. Copyright © 2006 by ASME.

Flow of wet powder in a conical centrifugal filter-an analytical model

A one-dimensional analytical model is developed for the steady state, axisymmetric, slender flow of saturated powder in a rotating perforated cone. Both the powder and the fluid spin with the cone with negligible slip in the hoop direction. They migrate up the wall of the cone along a generator under centrifugal force, which also forces the fluid out of the cone through the powder layer and the porous wall. The flow thus evolves from an over-saturated paste at inlet into a nearly dry powder at outlet. The powder is treated as a Mohr-Coulomb granular solid of constant void fraction and permeability. The shear traction at the wall is assumed to be velocity and pressure dependent. The fluid is treated as Newtonian viscous. The model provides the position of the colour line (the transition from over- to under-saturation) and the flow velocity and thickness profiles over the cone. Surface tension effects are assumed negligible compared to the centrifugal acceleration. Two alternative conditions are considered for the flow structure at inlet: fully settled powder at inlet, and progressive settling of an initially homogeneous slurry. The position of the colour line is found to be similar for these two cases over a wide range of operating conditions. Dominant dimensionless groups are identified which control the position of the colour line in a continuous conical centrifuge. Experimental observations of centrifuges used in the sugar industry provide preliminary validation of the model. © 2011 Elsevier Ltd.

Unsteady numerical study of wet steam flow in a low pressure steam turbine

In steam power plants condensation already starts in the flow path of the low pressure part of the steam turbine, which leads to a complex three-dimensional two-phase flow. Wetness losses are caused due to thermodynamic and mechanical relaxation processes during condensation and droplet transport. The present investigation focuses on the unsteady effects due to rotor-stator interaction on the droplet formation process. Results of unsteady three dimensional flow simulations of a two-stage steam turbine are presented, whereby this is the first time that non-equilibrium condensation is considered in such simulations. The numerical approach is based on RANS equations, which are extended by a wet steam specific nucleation and droplet growth model. Despite the use of a high performance cluster the unsteady simulation has a considerably high simulation time of approximately 60 days by use of 48 CPUs. © Springer-Verlag Berlin Heidelberg 2012.

Modelling and validation of wet steam flow in a low pressure steam turbine

Results of numerical investigations of the wet steam flow in a three stage low pressure steam turbine test rig are presented. The test rig is a scale model of a modern steam turbine design and provides flow measurements over a range of operating conditions which are used for detailed comparisons with the numerical results. For the numerical analysis a modern CFD code with user defined models for specific wet steam modelling is used. The effect of different theoretical models for nucleation and droplet growth are examined. It is shown that heterogeneous condensation is highly dependent on steam quality and, in this model turbine with high quality steam, a homogeneous theory appears to be the best choice. The homogeneous theory gives good agreement between the test rig traverse measurements and the numerical results. The differences in the droplet size distribution of the three stage turbine are shown for different loads and modelling assumptions. The different droplet growth models can influence the droplet size by a factor of two. An estimate of the influence of unsteady effects is made by means of an unsteady two-dimensional simulation. The unsteady modelling leads to a shift of nucleation into the next blade row. For the investigated three stage turbine the influence due to wake chopping on the condensation process is weak but to confirm this conclusion further investigations are needed in complete three dimensions and on turbines with more stages. Copyright © 2011 by ASME.

Moisture content in Dall's porpoise (Phocoenoides dalli) tissues: a reference base for conversion factors between dry and wet weight trace element concentrations in cetaceans

Concentration of trace elements measured by dry weight basis has become more commonly used in recent studies on cetaceans than wet weight basis, which was used more in earlier studies. Because few authors present moisture content data in their papers, it is difficult to compare the concentrations of trace elements between various studies. Therefore, we felt that it would be useful if a reference conversion factor (CF) for tissue types could be found to convert between wet weight and dry weight data on trace element concentrations. We determined the moisture contents of 14 tissues of Dall's porpoise (Phocoenoides dalli), and then, calculated the CF values for those tissues. Because the moisture content of each tissue differs from other tissues, it is necessary to use a specific CIF for each tissue rather than a general CF for several tissues. We have also found that CIF values for Dall's porpoise tissues are similar to the same tissues in other cetaceans. Therefore CF values from Dall's porpoise can be reliably used to convert between wet and dry weight concentrations for other cetacean tissues as reference data. (C) 2002 Elsevier Science Ltd. All rights reserved.

Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

Sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (ICP) etching technique was proposed to improve the performance of GaN-based light-emitting diodes (LEDs). GaN-based LEDs were fabricated on sapphire substrates through metal organic chemical vapor deposition (MOCVD). The LEDs fabricated on the patterned substrates exhibit improved device performance compared with the conventional LED fabricated on planar substrates when growth and device fabricating conditions were the same. The light output powers of the LEDs fabricated on wet-patterned and ICP-patterned substrates were about 37% and 17% higher than that of LEDs on planar substrates at an injection current of 20 mA, respectively. The enhancement is attributable to the combination of the improvement of GaN-based epilayers quality and the improvement of the light extraction efficiency. (c) 2008 Elsevier Ltd. All rights reserved.

Paired interference 3-dB coupler based on SOI rib waveguides with anisotropic chemical wet etching

A 3-dB paired interference (PI) optical coupler in silicon-on-insulator (SOI) based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation method (FD-BPM) and fabricated by potassium hydroxide (KOH) anisotropic chemical wet etching. Theoretically, tolerances of width, length, and port distance are more than 1, 100, and 1 mu m, respectively. Smooth interface was obtained with the propagation loss of 1.1 dB/cm at the wavelength of 1.55 mu m. The coupler has a good uniformity of 0.2 dB and low excess loss of less than 2 dB.

Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE

Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.

Laterally confined modes in wet-etched, metal-coated, quantum-dot-inserted pillar microcavities

We report the fabrication and the measurement of microcavities whose optical eigenmodes were discrete and were well predicted by using the model of the photonic dot with perfectly reflected sidewalls. These microcavities were consisted of the semiconductor pillar fabricated by the simple wet-etched process and successive metal coating. Angle-resolved photoluminescence spectra demonstrate the characteristic emission of the corresponding eigenmodes, as its pattern revealed by varying both polar (0) and azimuthal (45) angles. It is shown that the metal-coated sidewalls can provide an efficient way to suppress the emission due to the leaking modes in these pillar microcavities.

Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

The time dependence of wet oxidized AlGaAs/GaAs in a distributed Bragg reflector (DBR) structure has been studied by mean of transmission electron microscopy and Raman spectroscopy. The wet oxidized AlGaAs transforms from an initial amorphous hydroxide phase to the polycrystalline gamma-Al2O3 phase with the extension of oxidation time. The thickness of oxide layers will contract due to the different volume per Al atom in AlGaAs and in the oxides. In the samples oxidized for 10 and 20 min, there are some fissures along the AlGaAs/GaAs interfaces. In the samples oxidized longer, although no such fissures are present along the interfaces, the whole oxidized DBR delaminates from the buffer. (c) 2005 American Vacuum Society.

Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings

The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigated by combining atomic force microscopy and removal of the GaAs cap layer by selective wet etching. This method is used to investigate how the morphology of In(Ga)As quantum dots changes upon GaAs capping and subsequent in situ etching with AsBr3. A wave function calculation based on the experimentally determined morphologies suggests that quantum dots transform into quantum rings during in situ etching. (c) 2007 American Institute of Physics.