Ultrashort pulse generation from diode laser devices

This thesis presents a detailed, experiment-based study of generation of ultrashort optical pulses from diode lasers. Simple and cost-effective techniques were used to generate high power, high quality optical short pulses at various wavelength windows. The major achievements presented in the thesis is summarised as follows. High power pulses generation is one of the major topics discussed in the thesis. Although gain switching is the simplest way for ultrashort pulse generation, it proves to be quite effective to deliver high energy pulses on condition that the pumping pulses with extremely fast rising time and high enough amplitude are applied on specially designed pulse generators. In the experiment on a grating-coupled surface emitting laser (GCSEL), peak power as high as 1W was achieved even when its spectral bandwidth was controlled within 0.2nm. Another experiment shows violet picosecond pulses with peak power as high as 7W was achieved when the intensive electrical pulses were applied on optimised DC bias to pump on InGaN violet diode laser. The physical mechanism of this phenomenon, as we considered, may attributed to the self-organised quantum dots structure in the laser. Control of pulse quality, including spectral quality and temporal profile, is an important issue for high power pulse generation. The ways to control pulse quality described in the thesis are also based on simple and effective techniques. For instance, GCSEL used in our experiment has a specially designed air-grating structure for out-coupling of optical signals; hence, a tiny flat aluminium mirror was placed closed to the grating section and resulted in a wavelength tuning range over 100nm and the best side band suppression ratio of 40dB. Self-seeding, as an effective technique for spectral control of pulsed lasers, was demonstrated for the first time in a violet diode laser. In addition, control of temporal profile of the pulse is demonstrated in an overdriven DFB laser. Wavelength tuneable fibre Bragg gratings were used to tailor the huge energy tail of the high power pulse. The whole system was compact and robust. The ultimate purpose of our study is to design a new family of compact ultrafast diode lasers. Some practical ideas of laser design based on gain-switched and Q-switched devices are also provided in the end.

Ultra small integrated optical fiber sensing system

This paper introduces a revolutionary way to interrogate optical fiber sensors based on fiber Bragg gratings (FBGs) and to integrate the necessary driving optoelectronic components with the sensor elements. Low-cost optoelectronic chips are used to interrogate the optical fibers, creating a portable dynamic sensing system as an alternative for the traditionally bulky and expensive fiber sensor interrogation units. The possibility to embed these laser and detector chips is demonstrated resulting in an ultra thin flexible optoelectronic package of only 40 µm, provided with an integrated planar fiber pigtail. The result is a fully embedded flexible sensing system with a thickness of only 1 mm, based on a single Vertical-Cavity Surface-Emitting Laser (VCSEL), fiber sensor and photodetector chip. Temperature, strain and electrodynamic shaking tests have been performed on our system, not limited to static read-out measurements but dynamically reconstructing full spectral information datasets.

Low-cost fully integrated fiber Bragg grating interrogation system

Fiber Bragg gratings can be used for monitoring different parameters in a wide variety of materials and constructions. The interrogation of fiber Bragg gratings traditionally consists of an expensive and spacious peak tracking or spectrum analyzing unit which needs to be deployed outside the monitored structure. We present a dynamic low-cost interrogation system for fiber Bragg gratings which can be integrated with the fiber itself, limiting the fragile optical in- and outcoupling interfaces and providing a compact, unobtrusive driving and read-out unit. The reported system is based on an embedded Vertical Cavity Surface Emitting Laser (VCSEL) which is tuned dynamically at 1 kHz and an embedded photodiode. Fiber coupling is provided through a dedicated 45° micromirror yielding a 90° in-the-plane coupling and limiting the total thickness of the fiber coupled optoelectronic package to 550 µm. The red-shift of the VCSEL wavelength is providing a full reconstruction of the spectrum with a range of 2.5 nm. A few-mode fiber with fiber Bragg gratings at 850 nm is used to prove the feasibility of this low-cost and ultra-compact interrogation approach.

A compact, portable and low cost generic interrogation strain sensor system using an embedded VCSEL, detector and fibre Bragg grating

We present a compact, portable and low cost generic interrogation strain sensor system using a fibre Bragg grating configured in transmission mode with a vertical-cavity surface-emitting laser (VCSEL) light source and a GaAs photodetector embedded in a polymer skin. The photocurrent value is read and stored by a microcontroller. In addition, the photocurrent data is sent via Bluetooth to a computer or tablet device that can present the live data in a real time graph. With a matched grating and VCSEL, the system is able to automatically scan and lock the VCSEL to the most sensitive edge of the grating. Commercially available VCSEL and photodetector chips are thinned down to 20 µm and integrated in an ultra-thin flexible optical foil using several thin film deposition steps. A dedicated micro mirror plug is fabricated to couple the driving optoelectronics to the fibre sensors. The resulting optoelectronic package can be embedded in a thin, planar sensing sheet and the host material for this sheet is a flexible and stretchable polymer. The result is a fully embedded fibre sensing system - a photonic skin. Further investigations are currently being carried out to determine the stability and robustness of the embedded optoelectronic components. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Ultra small integrated optical fiber sensing system

This paper introduces a revolutionary way to interrogate optical fiber sensors based on fiber Bragg gratings (FBGs) and to integrate the necessary driving optoelectronic components with the sensor elements. Low-cost optoelectronic chips are used to interrogate the optical fibers, creating a portable dynamic sensing system as an alternative for the traditionally bulky and expensive fiber sensor interrogation units. The possibility to embed these laser and detector chips is demonstrated resulting in an ultra thin flexible optoelectronic package of only 40 µm, provided with an integrated planar fiber pigtail. The result is a fully embedded flexible sensing system with a thickness of only 1 mm, based on a single Vertical-Cavity Surface-Emitting Laser (VCSEL), fiber sensor and photodetector chip. Temperature, strain and electrodynamic shaking tests have been performed on our system, not limited to static read-out measurements but dynamically reconstructing full spectral information datasets.

Bessel beams from semiconductor light sources

We report on recent progress in the generation of non-diffracting (Bessel) beams from semiconductor light sources including both edge-emitting and surface-emitting semiconductor lasers as well as light-emitting diodes (LEDs). Bessel beams at the power level of Watts with central lobe diameters of a few to tens of micrometers were achieved from compact and highly efficient lasers. The practicality of reducing the central lobe size of the Bessel beam generated with high-power broad-stripe semiconductor lasers and LEDs to a level unachievable by means of traditional focusing has been demonstrated. We also discuss an approach to exceed the limit of power density for the focusing of radiation with high beam propagation parameter M2. Finally, we consider the potential of the semiconductor lasers for applications in optical trapping/tweezing and the perspectives to replace their gas and solid-state laser counterparts for a range of implementations in optical manipulation towards lab-on-chip configurations. © 2014 Elsevier Ltd.

A compact, portable and low cost generic interrogation strain sensor system using an embedded VCSEL, detector and fibre Bragg grating

We present a compact, portable and low cost generic interrogation strain sensor system using a fibre Bragg grating configured in transmission mode with a vertical-cavity surface-emitting laser (VCSEL) light source and a GaAs photodetector embedded in a polymer skin. The photocurrent value is read and stored by a microcontroller. In addition, the photocurrent data is sent via Bluetooth to a computer or tablet device that can present the live data in a real time graph. With a matched grating and VCSEL, the system is able to automatically scan and lock the VCSEL to the most sensitive edge of the grating. Commercially available VCSEL and photodetector chips are thinned down to 20 µm and integrated in an ultra-thin flexible optical foil using several thin film deposition steps. A dedicated micro mirror plug is fabricated to couple the driving optoelectronics to the fibre sensors. The resulting optoelectronic package can be embedded in a thin, planar sensing sheet and the host material for this sheet is a flexible and stretchable polymer. The result is a fully embedded fibre sensing system - a photonic skin. Further investigations are currently being carried out to determine the stability and robustness of the embedded optoelectronic components. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Low-cost fully integrated fiber Bragg grating interrogation system

Fiber Bragg gratings can be used for monitoring different parameters in a wide variety of materials and constructions. The interrogation of fiber Bragg gratings traditionally consists of an expensive and spacious peak tracking or spectrum analyzing unit which needs to be deployed outside the monitored structure. We present a dynamic low-cost interrogation system for fiber Bragg gratings which can be integrated with the fiber itself, limiting the fragile optical in- and outcoupling interfaces and providing a compact, unobtrusive driving and read-out unit. The reported system is based on an embedded Vertical Cavity Surface Emitting Laser (VCSEL) which is tuned dynamically at 1 kHz and an embedded photodiode. Fiber coupling is provided through a dedicated 45° micromirror yielding a 90° in-the-plane coupling and limiting the total thickness of the fiber coupled optoelectronic package to 550 µm. The red-shift of the VCSEL wavelength is providing a full reconstruction of the spectrum with a range of 2.5 nm. A few-mode fiber with fiber Bragg gratings at 850 nm is used to prove the feasibility of this low-cost and ultra-compact interrogation approach.

Dynamic strain sensor using a vcsel and a polymer fiber bragg grating in a multimode fiber

We have implemented a dynamic strain sensor using a Polymer Optical Fiber Bragg Grating (POFBG). In this paper, we have investigated an approach for making such systems cheaper through the use of easy to handle multimode fiber. A Vertical-Cavity Surface-Emitting Laser is used to decrease the cost of the interrogation system and a photodetector converts the reflected light into an electrical signal.

Mode-locked semiconductor disk lasers

This paper will review the recent advances in the field of ultrashort pulse generation from optically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs). In this review, we will summarize the most significant results presented over the last 15 years, before highlighting recent breakthroughs related to mode-locked VECSELs by different research groups. Different mode-locking techniques for OP-VECSELs are described in detail. Previously, saturable absorbers, such as semiconductor saturable absorber mirrors—external, or internal as in mode-locked integrated external-cavity surface emitting lasers (MIXSEL)—, and recently, novel-material-based carbon-nanotube and graphene saturable absorbers have been employed. A new mode-locking method was presented and discussed in recent years. This method is referred to as self-mode-locking or saturable-absorber-free operation of mode-locked VECSELs. In this context, we particularly focus on achievements regarding self-mode-locking, which is considered a promising technique for the realization of high-power, compact, robust and cost-efficient ultrashort pulse lasers. To date, the presented mode-locking techniques have led to great enhancement in average powers, peak powers, and repetition rates that can be achieved with passively mode-locked VECSELs.

Self-mode-locked semiconductor disk lasers

In the last decade, vertical-external-cavity surface-emitting lasers (VECSELs) have become promising sources of ultrashort laser pulses. While the mode-locked operation has been strongly relying on costly semiconductor saturable-Absorber mirrors for many years, new techniques have been found for pulse formation. Mode-locking VECSELs are nowadays not only achievable by using a variety of saturable absorbers, but also by using a saturable-Absorber-free technique referred to as self-mode-locking (SML), which is to be highlighted here.

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate)

Herein, an insulating fluorinated polyimide (F-PI) is utilized as an ultrathin buffer layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in polymer light-emitting diodes to enhance the device performance. The selective solubility of F-PI in common solvents avoids typical intermixing interfacial problems during the sequential multilayer spin-coating process. Compared to the control device, the F-PI modification causes the luminous and power efficiencies of the devices to be increased by a factor of 1.1 and 4.7, respectively, along with almost 3-fold device lifetime enhancement. Photovoltaic measurement, single-hole devices, and X-ray photoelectron spectroscopy, are utilized to investigate the underlying, mechanisms, and it is found that the hole injection barrier is lowered owing to the interactions between the PEDOT:PSS and F-PI. The F-PI modified PEDOT:PSS layer demonstrates step-up ionization potential profiles from the intrinsic bulk PEDOT:PSS side toward the F-PI-modified PEDOT:PSS surface, which facilitate the hole injection.

Formation of low surface energy separators with undercut structures via a full-solution process and its application in inkjet printed matrix of polymer light-emitting diodes

In this paper, low surface energy separators With undercut structures were fabricated through a full solution process, These low Surface energy separators are more suitable for application in inkjet printed passive-matrix displays of polymer light-emitting diodes. A patterned PS film was formed on the P4VP/photoresist film by microtransfer printing firstly. Patterned Au-coated Ni film was formed on the uncovered P4VP/photoresist film by electroless deposition. This metal film was used as mask to pattern the photoresist layer and form undercut structures with the patterned photoresist layer. The surface energy of the metal film also decreased dramatically from 84.6 mj/m(2) to 21.1 mJ/m(2) by modification of fluorinated mercaptan self-assemble monolayer on Au surface. The low surface energy separators were used to confine the flow of inkjet printed PFO solution and improve the patterning resolution of inkjet printing successfully. Separated PFO stripes, complement with the pattern of the separators, formed through inkjet printing.

CHARACTERIZATION OF THE AU SURFACE-STRUCTURE OF AL-L-AU LIGHT-EMITTING TUNNEL-JUNCTIONS

Visible light is emitted from the Au-air interface of Al-I-Au thin-film tunnel junctions (deposited over a thin layer of CaF2 on glass) as a result of the decay of surface plasmon polaritons (SPPs). We show the surface topography of such a Au film and relate its large-scale features to the outcoupling of fast SPP's to photons. The absence of short-scale roughness features is explained by thier disappearance through surface diffusion. To confirm this a controlled sequence of 5-nm, 20-ms scanning tunneling microscope (STM) W tip crashes has been used to produce indentations 3 nm deep with a lateral dimension of 5-7 nm on a Au crystal in air at room temperature. Four sequences of indentations were drawn in the form of a square box. Right from the start, feature decay is observed and over a period of 2 h a succession of images shows that the structure disappears into the background as a result of surface diffusion. The surface diffusion constant is estimated to be 10(-18) cm2 s-1. The lack of light output via slow mode SPPs is an inevitable consequence of surface annealing.