Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

Surface roughness and high density of cubic twins and hexagonal inclusions in cubic GaN epilayers

Surface roughness and its correlation with the polarity of internal hexagonal inclusions and cubic twins have been investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The surface roughness resulted from large amount of strips, which prolonged in [1 (1) over bar0] direction with small size in [110] or [110] direction. The sidestep of each strip is just the top of high density of hexagonal inclusions or cubic microtwins. Moreover, XRD shows that the amount of hexagonal inclusions and cubic microtwins measured in [110] direction are twice or more as much as in [110] direction. Therefore, it is hexagonal inclusions, cubic twins and their distributive polarity that is responsible to the surface characteristics of cubic GaN epilayers.

Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy

Postgrowth rapid thermal annealing was performed on InGaAs/GaAs quantum dots grown by molecular beam epitaxy. The blue shift of the emission peak and the narrowing of the luminescence line width are observed at lower annealing temperature. However, when the annealing temperature is increased to 850 degrees C, the emission line width becomes larger. The TEM image of this sample shows that the surface becomes rough, and some large clusters are formed, which is due to the interdiffusion of In, Ga atoms at the InGaAs/GaAs interface and to the strain relaxation. The material is found to degrade dramatically when the annealing temperature is further increased to 900 degrees C, while emission from quantum dots can still be detected, along with the appearance of the emission from excited state. (C) 2000 Elsevier Science B.V. All rights reserved.

Effect of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel

The objective of this paper is to investigate the effects of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel. The test section consists of a bottom silicon substrate bonded with a top glass cover. Three consecutive parts of an inlet fluid plenum, a central microchannel and an outlet fluid plenum were etched in the silicon substrate. The central microchannel had a width of 800 mu m and a depth of 30 mu m. Acetone liquid was used as the working fluid. High outlet vapor qualities were dealt with here. The flow pattern consists of a fluid triangle (shrinkage of the liquid films) and a connected long liquid rivulet, which is generated in the central microchannel in the timescale of milliseconds. The peculiar flow pattern is formed due to the following reasons: (1) the liquid rivulet tends to have a large contact area with the top hydrophilic channel surface of the glass cover, but a smaller contact area with the bottom silicon hydrophobic surface. (2) The temperature gradient in the chip width direction at the top channel surface of the glass cover not only causes the shrinkage of the liquid films in the central microchannel upstream, but also attracts the liquid rivulet populated near the microchannel centerline. (3) The zigzag pattern is formed due to the competition between the evaporation momentum forces at the vapor-liquid interfaces and the force due to the Marangoni effect. The former causes the rivulet to deviate from the channel centerline and the latter draws the rivulet toward the channel centerline. (4) The temperature gradient along the flow direction in the central microchannel downstream causes the breakup of the rivulet to form isolated droplets there. (5) Liquid stripes inside the upstream fluid triangle were caused by the small capillary number of the liquid film, at which the large surface tension force relative to the viscous force tends to populate the liquid film locally on the top glass cover surface.

Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots

Self-organized In_(0.5)Ga_(0.5)As/GaAs quantum island structure emitting at 1. 35 (im at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs)_1/( GaAs)_1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In_(0.5)Ga_(0.5)As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.