Second-harmonic generation from biological tissues : effect of excitation wavelength

We report on the measurement of second-harmonic signals from hyperplastic parenchyma and stroma in malignant human prostate tissue under femtosecond pulsed illumination in the wavelength range from 730 to 870 nm. In particular, the relationship of the second-harmonic generation to the excitation wavelength is measured. The result in these two regions behaves considerably differently and thus provides a possible indicator for identifying tissue components and malignancy.

Dependence of second-harmonic signals generated in malignant human prostate tissue on excitation wavelength

The dependence of second harmonic generation (SHG) from hyperplastic parenchyma and stroma in maligant human prostate tissue on excitation wavelengths was measured. A femtosecond pulsed laser, a scanning microscope and a spectrograph were used to perform the measurements. The spectra were measured under excitation power of 10 mW at excitation wavelengths of 730 nm, 750 nm, 800 nm, 850 nm and 890 nm. Analysis suggested that the SHG in prostate tissue is highly structured and wavelength dependent signifying its ability to be used as an indicator for recognizing tissue components, ultrastructures, micro-environments and diseases.

Dual Z-source inverter with three-level reduced common mode switching

This paper presents the design of a dual Z-source inverter that can be used with either a single dc source or two isolated dc sources. Unlike traditional inverters, the integration of a properly designed Z-source network and semiconductor switches to the proposed dual inverter allows buck-boost power conversion to be performed over a wide modulation range with three-level output waveforms generated. The connection of an additional transformer to the inverter ac output also allows all generic wye- or delta-connected loads with three-wire or four-wire configuration to be supplied by the inverter. Modulation-wise, the dual inverter can be controlled using a carefully designed carrier-based pulse-width modulation (PWM) scheme that always will ensure balanced voltage boosting of the Z-source network, while simultaneously achieving reduced common-mode switching. Because of the omission of dead-time delays in the dual inverter PWM scheme, its switched common-mode voltage can be completely eliminated, unlike in traditional inverters where narrow common-mode spikes are still generated. Under semiconductor failure conditions, the presented PWM schemes can easily be modified to allow the inverter to operate without interruption and for cases where two isolated sources are used, zero common-mode voltage can still be ensured. These theoretical findings together with the inverter practicality have been confirmed both in simulations using PSIM with Matlab/Simulink coupler and experimentally using a laboratory implemented inverter prototype.

Dual Z-source inverter with three-level reduced common-mode switching

This paper presents the design of a dual Z-source inverter that can be used with either a single dc source or two isolated dc sources. Unlike traditional inverters, the integration of a properly designed Z-source network and semiconductor switches to the proposed dual inverter allows buck-boost power conversion to be performed over a wide modulation range, with three-level output waveforms generated. The connection of an additional transformer to the inverter ac output also allows all generic wye-or delta-connected loads with three-wire or four-wire configuration to be supplied by the inverter. Modulationwise, the dual inverter can be controlled using a carefully designed carrier-based pulsewidth-modulation (PWM) scheme that will always ensure balanced voltage boosting of the Z-source network while simultaneously achieving reduced common-mode switching. Because of the omission of dead-time delays in the dual-inverter PWM scheme, its switched common-mode voltage can be completely eliminated, unlike in traditional inverters, where narrow common-mode spikes are still generated. Under semiconductor failure conditions, the presented PWM schemes can easily be modified to allow the inverter to operate without interruption, and for cases where two isolated sources are used, zero common-mode voltage can still be ensured. These theoretical findings, together with the inverter practicality, have been confirmed in simulations both using PSIM with Matlab/Simulink coupler and experimentally using a laboratory-implemented inverter prototype.

A novel matrix converter based resonant dual active bridge for V2G applications

Dual-active bridges (DABs) can be used to deliver isolated and bidirectional power to electric vehicles (EVs) or to the grid in vehicle-to-grid (V2G) applications. However, such a system essentially requires a two-stage power conversion process, which significantly increases the power losses. Furthermore, the poor power factor associated with DAB converters further reduces the efficiency of such systems. This paper proposes a novel matrix converter based resonant DAB converter that requires only a single-stage power conversion process to facilitate isolated bi-directional power transfer between EVs and the grid. The proposed converter comprises a matrix converter based front end linked with an EV side full-bridge converter through a high frequency isolation transformer and a tuned LCL network. A mathematical model, which predicts the behavior of the proposed system, is presented to show that both the magnitude and direction of the power flow can be controlled through either relative phase angle or magnitude modulation of voltages produced by converters. Viability of the proposed concept is verified through simulations. The proposed matrix converter based DAB, with a single power conversion stage, is low in cost, and suites charging and discharging in single or multiple EVs or V2G applications.

Assessment of body composition in Indian adults: comparison between dual-energy X-ray absorptiometry and isotope dilution technique

Dual-energy X-ray absorptiometry (DXA) and isotope dilution technique have been used as reference methods to validate the estimates of body composition by simple field techniques; however, very few studies have compared these two methods. We compared the estimates of body composition by DXA and isotope dilution (18O) technique in apparently healthy Indian men and women (aged 19–70 years, n 152, 48 % men) with a wide range of BMI (14–40 kg/m2). Isotopic enrichment was assessed by isotope ratio mass spectroscopy. The agreement between the estimates of body composition measured by the two techniques was assessed by the Bland–Altman method. The mean age and BMI were 37 (SD 15) years and 23·3 (SD 5·1) kg/m2, respectively, for men and 37 (SD 14) years and 24·1 (SD 5·8) kg/m2, respectively, for women. The estimates of fat-free mass were higher by about 7 (95 % CI 6, 9) %, those of fat mass were lower by about 21 (95 % CI 218,223) %, and those of body fat percentage (BF%) were lower by about 7·4 (95 % CI 28·2, 26·6) % as obtained by DXA compared with the isotope dilution technique. The Bland–Altman analysis showed wide limits of agreement that indicated poor agreement between the methods. The bias in the estimates of BF% was higher at the lower values of BF%. Thus, the two commonly used reference methods showed substantial differences in the estimates of body composition with wide limits of agreement. As the estimates of body composition are method-dependent, the two methods cannot be used interchangeably

High mobility top-gate and dual-gate polymer thin-film transistors based on diketopyrrolopyrrole-naphthalene copolymer

In this letter, the performance characteristics of top-gate and dual-gate thin-film transistors (TFTs) with active semiconductor layers consisting of diketopyrrolopyrrole-naphthalene copolymer are described. Optimized top-gate TFTs possess mobilities of up to 1 cm 2 /V s with low contact resistance and reduced hysteresis in air. Dual-gate devices possess higher drive currents as well as improved subthreshold and above threshold characteristics compared to single-gate devices. We also describe the reasons that dual-gate devices result in improved performance. The good stability of this polymer combined with their promising electrical properties make this material a very promising semiconductor for printable electronics.

Charge-carrier velocity distributions in high-mobility polymer dual-gate thin-film transistors

We report charge-carrier velocity distributions in high-mobility polymer thin-film transistors (PTFTs) employing a dual-gate configuration. Our time-domain measurements of dual-gate PTFTs indicate higher effective mobility as well as fewer low-velocity carriers than in single-gate operation. Such nonquasi-static (NQS) measurements support and clarify the previously reported results of improved device performance in dual-gate devices by various groups. We believe that this letter demonstrates the utility of NQS measurements in studying charge-carrier transport in dual-gate thin-film transistors.

Solution-processed dual-gate polymer field-effect transistors for display applications

We describe the advantages of dual-gate thin-film transistors (TFTs) for display applications. We show that in TFTs with active semiconductor layers composed of diketopyrrolopyrrole-naphthalene copolymer, the on-current is increased, the off-current is reduced, and the sub-threshold swing is improved compared to single-gate devices. Charge transport measurements in steady-state and under non-quasi-static conditions reveal the reasons for this improved performance. We show that in dual-gate devices, a much smaller fraction of charge carriers move in slow trap states. We also compare the activation energies for charge transport in the top-gate and bottom-gate configurations.

A dual inverter with integrated energy storage for wind power systems

This paper explores the possibility of using grid side inverter as an interface to connect energy storage systems. A dual inverter system, formed by cascading two 2-level inverters through a coupling transformer, is used as the testing model. The inverters are named as “main inverter” and “auxiliary inverter”. The main inverter is powered by the rectified output of the wind generator while the auxiliary inverter is attached to a Battery Energy Storage System (BESS). If there is a surplus of wind power compared to the demand, then that would be stored in BESS while if there is a deficit in wind power then the demand will be satisfied by supplying power from the BESS. This enables constant power dispatch to the grid irrespective of wind changes. Novel modulation and control techniques are proposed to address the problem of non-integer, dynamically-varying dc-link voltage ratio, which is due to random wind changes. Furthermore, a maximum power tracking controller for this unique system is explained in detail. Simulation results verify the efficacy of proposed modulation and control techniques in suppressing random power fluctuations.

Dual inverter based battery energy storage system for grid connected photovoltaic systems

This paper explores a new breed of energy storage system interfacing for grid connected photovoltaic (PV) systems. The proposed system uses the popular dual inverter topology in which one inverter is supplied by a PV cell array and the other by a Battery Energy Storage System (BESS). The resulting conversion structure is controlled in a way that both demand matching and maximum power point tracking of the PV cell array are performed simultaneously. This dual inverter topology can produces 2, 3, 4 and 5 level inverter voltage waveforms at the dc-link voltage ratios of 0:1, 1:1, 2:1 and 3:2 respectively. Since the output voltage of the PV cell array and the battery are uncorrelated and dynamically change, the resulting dc-link voltage ratio can take non-integer values as well. These noninteger dc-link voltage ratios produce unevenly distributed space vectors. Therefore, the main issue with the proposed system is the generation of undistorted current even in the presence of unevenly distributed and dynamically changing space vectors. A modified space vector modulation method is proposed in this paper to address this issue and its efficacy is proved by simulation results. The ability of the proposed system to act as an active power source is also verified.

A dual inverter based supercapacitor direct integration scheme for wind energy conversion systems

This paper presents a new direct integration scheme for supercapacitors that are used to mitigate short term power fluctuations in wind power systems. The proposed scheme uses the popular dual inverter topology for grid connection as well as interfacing a supercapacitor bank. The dual inverter system is formed by cascading two 2-level inverters named as the “main inverter” and the “auxiliary inverter”. The main inverter is powered by the rectified output of a wind turbine coupled permanent magnet synchronous generator. The auxiliary inverter is directly connected to a super capacitor bank. This approach eliminates the need for an interfacing dc-dc converter for the supercapacitor bank and thus improves the overall efficiency. A detailed analysis on the effects of non-integer dynamically changing voltage ratio is presented. The concept of integrated boost rectifier is used to carry out the Maximum Power Point Tracking (MPPT) of the wind turbine generator. Another novel feature of this paper is the power reference adjuster which effectively manages capacitor charging and discharging at extreme conditions. Simulation results are presented to verify the efficacy of the proposed system in suppressing short term wind power fluctuations.

Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry

Purpose Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Methods Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable “air cap”. A set of output ratios (ORfclin Det ) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to ORfclin Det measured using an IBA stereotactic field diode (SFD). k fclin, f msr Qclin,Qmsr was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that k fclin, f msr Qclin,Qmsr was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which s “correction-free” in small field relative dosimetry. In addition, the feasibility of experimentally transferring k fclin, f msr Qclin,Qmsr values from the SFD to unknown diodes was tested by comparing the experimentally transferred k fclin, f msr Qclin,Qmsr values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. Results 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWeair) produced output factors equivalent to those in water at all field sizes (5–50 mm). The optimal air thickness required for the EDGEe diode was found to be 0.6 mm. The modified diode (EDGEeair) produced output factors equivalent to those in water, except at field sizes of 8 and 10 mm where it measured approximately 2% greater than the relative dose to water. The experimentally calculated k fclin, f msr Qclin,Qmsr for both the PTWe and the EDGEe diodes (without air) matched Monte Carlo simulated results, thus proving that it is feasible to transfer k fclin, f msr Qclin,Qmsr from one commercially available detector to another using experimental methods and the recommended experimental setup. Conclusions It is possible to create a diode which does not require corrections for small field output factor measurements. This has been performed and verified experimentally. The ability of a detector to be “correction-free” depends strongly on its design and composition. A nonwater-equivalent detector can only be “correction-free” if competing perturbations of the beam cancel out at all field sizes. This should not be confused with true water equivalency of a detector.