Solution-processed dual-gate polymer field-effect transistors for display applications
Data(s) |
05/12/2013
|
---|---|
Resumo |
We describe the advantages of dual-gate thin-film transistors (TFTs) for display applications. We show that in TFTs with active semiconductor layers composed of diketopyrrolopyrrole-naphthalene copolymer, the on-current is increased, the off-current is reduced, and the sub-threshold swing is improved compared to single-gate devices. Charge transport measurements in steady-state and under non-quasi-static conditions reveal the reasons for this improved performance. We show that in dual-gate devices, a much smaller fraction of charge carriers move in slow trap states. We also compare the activation energies for charge transport in the top-gate and bottom-gate configurations. |
Identificador | |
Publicador |
IEEE |
Relação |
DOI:10.1109/JDT.2012.2224636 Ha, T. J., Sonar, P., & Dodabalapur, A. (2013) Solution-processed dual-gate polymer field-effect transistors for display applications. Journal of Display Technology, 9(9), pp. 710-714. |
Direitos |
Copyright 2012 IEEE |
Fonte |
School of Chemistry, Physics & Mechanical Engineering; Science & Engineering Faculty |
Palavras-Chave | #Charge carrier transport #Display applications #Dual-gate configuration #Non-quasi-static measurements #Polymer field-effect transistors (fets) #Velocity distributions #Display application #Non quasi static #Polymer field effect transistors #Semiconductor layers #Single-gate devices #Thin-film transistor (TFTs) #Transport measurements #Activation energy #Charge carriers #Naphthalene #Semiconductor devices #Thin film transistors #Velocity distribution #Carrier transport |
Tipo |
Journal Article |