CALCULATION OF DIELECTRIC-CONSTANTS FOR SEMICONDUCTORS - AN APPLICATION OF ABINITIO PSEUDOPOTENTIAL METHOD

We have used ab initio pseudopotential method to generate basis wavefunctions and eigen energies to carry out first principle calculations of the static macroscopic dielectric constant for GaAs and GaP. The resulted converged random phase approximation (RPA) value is 12.55 and 10.71, in excellent agreement to the experimental value of 12.4 and 10.86, respectively. The inclusion of the exchange correlation contribution makes the calculated result slightly worsen. A convergence test with respect to the number of k points in Brillouin zone (BZ) integration was carried out. Sixty irreducible BZ k points were used to achieve the converged results. Integration with only 10 special k points increased the RPA value by 15%.

Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD

The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).

Enhanced thermal stability of zinc-based titanate (dielectric) ceramics prepared by the modified sol-gel route

A multi-component substitution of Co and Ni was incorporated into ZnTiO3 to form pure hexagonal Zn1-x(Co1/2Ni1/2)xTiO(3) (x = 0,0.8,0.9,1.0) dielectric ceramic powders by a modified sol-gel route, following heat treatments at 600 degrees C for 3 h and at 800 degrees C for 6 h. Differential scanning calorimetry measurements revealed that the order of increasing thermal stability of solid solution compound Zn1-x(Co1/2Ni1/2)(x)TiO3 was ZnTiO3 (945 degrees C), Zn0.1Ni0.9TiO3 (1346 degrees C), Zn-0.1(Co1/2Ni1/2)(0.9)TiO3 (1390 degrees C), and Zn0.1Co0.9TiO3 (> 1400 degrees C). Both the dielectric constant and loss tangent reached a maximum at x = 0.8 and then decreased with solubility, x, and measurement frequency.

CHEMICAL-BONDS AND DIELECTRIC-CONSTANTS OF REM (RE=RARE EARTH, M=N, P, AS, SB) CRYSTALS

By using Pillips and van Vechten theory, the chemical bond parameters and dielectric constants of REM (RE=rare earth, M=N, P, As, Sb) crystals were calculated. The values calculated of dielectric constants agree with the experimental values.

The nonlinear effective dielectric response of graded composites

The perturbation method is developed to deal with the effective nonlinear dielectric responses of weakly nonlinear graded composites, which consist of the graded inclusion with a linear dielectric function of spatial variables of inclusion material. For Kerr-like nonlinear graded composites, as an example in two dimensions, we have used the perturbation method to solve the boundary value problems of potentials, and studied the effective responses of nonlinear graded composites, where a cylindrical inclusion with linear dielectric function and nonlinear dielectric constant is randomly embedded in a homogeneous host with linear and nonlinear dielectric constants. For the exponential function and the power-law dielectric profiles of cylindrical inclusions, in the dilute limit, we have derived the formulae of effective nonlinear responses of both graded nonlinear composites.

Effective dielectric response of composites witli graded material

The effective dielectric response of linear composites containing graded material is investigated under an applied electric field Eo. For the cylindrical inclusion with gradient dielectric function, epsilon(i)(r) = b + cr, randomly embedded in a host with dielectric constant epsilon(m), we have obtained the exact solution of local electric potential of the composite media regions, which obeys a linear constitutive relation D = epsilonE, using hypergeometric function. In dilute limit, we have derived the effective dielectric response of the linear composite media. Furthermore, for larger volume fraction, the formulas of effective dielectric response of the graded composite media, are given.

Effective dielectric response of graded spherical composites

The effective dielectric response of composites containing graded material is investigated when an external uniform electric field E-0 is applied to it. For a spherical particle with gradient dielectric constant, epsilon(i) (r) = b + cr, randomly embedded in a host with dielectric constant epsilon(m), we have obtained the exact solution of local electric potential in the composite media regions, which obey a linear constitutive relation D = epsilonE, using hypergeometric function. In dilute limit, the effective dielectric response of the linear graded composite media is derived. Furthermore, for larger volume fraction, we have given an effective medium approximation to estimate the effective dielectric response of the graded composite media. (C) 2003 Elsevier B.V All rights reserved.

Dielectric response of spherically anisotropic graded piezoelectric composites

A graded piezoelectric composite consisting of a spherically anisotropic graded piezoelectric inclusion imbedded in an infinite nonpiezoelectric matrix, with the physical properties of the graded spherical inclusion having a power-law profile with respect to the radial variable r, is studied theoretically. Under an external uniform electric field, the electric displacement field and the elastic stress tensor field of this spherically anisotropic graded piezoelectric composite are derived exactly by means of displacement separation technique, based on the governing equations in the dilute limit. A piezoelectric response mechanism, in which the effective piezoelectric response vanishes along the z direction (or x,y directions), is revealed in this kind of graded piezoelectric composites. Furthermore, it is found that the effective dielectric constant decreases (or increases) with the volume fraction p of the inclusions if the exponent parameter k of the grading profile is larger (or smaller) than a critical value. (C) 2007 American Institute of Physics.

Probing polarization and dielectric function of molecules with higher order harmonics in scattering-near-field scanning optical microscopy

The idealized system of an atomically flat metallic surface [highly oriented pyrolytic graphite (HOPG)] and an organic monolayer (porphyrin) was used to determine whether the dielectric function and associated properties of thin films can be accessed with scanning-near-field scanning optical microscopy (s-NSOM). Here, we demonstrate the use of harmonics up to fourth order and the polarization dependence of incident light to probe dielectric properties on idealized samples of monolayers of organic molecules on atomically smooth substrates. An analytical treatment of light/sample interaction using the s-NSOM tip was developed in order to quantify the dielectric properties. The theoretical analysis and numerical modeling, as well as experimental data, demonstrate that higher order harmonic scattering can be used to extract the dielectric properties of materials with tens of nanometer spatial resolution. To date, the third harmonic provides the best lateral resolution (∼50 nm) and dielectric constant contrast for a porphyrin film on HOPG. © 2009 American Institute of Physics.

The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin films

Recent experimental measurements of large flexoelectric coefficients in ferroelectric ceramics suggest that strain gradients can affect the polarization and permittivity behaviour of inhomogeneously strained ferroelectrics. Here we present a phenomenological model of the effect of flexoelectricity on the dielectric constant, polarization, Curie temperature (T-C), temperature of maximum dielectric constant (T-m) and temperature of the onset of reversible polarization (T-ferro) for ferroelectric thin films subject to substrate-induced epitaxial strains that are allowed to relax with thickness, and the qualitative and quantitative predictions of the model are compared with experimental results for (Ba0.5Sr0.5)TiO3 thin films on SrRuO3 electrodes. It is shown that flexoelectricity can play an important role in decreasing the maximum dielectric constant of ferroelectric thin films under inhomogeneous in-plane strain, regardless of the sign of the strain gradient.

Moisture and temperature dependence of the dielectric properties of pharmaceutical powders

The dielectric properties of pharmaceutical powder-(paracetamol, aspirin, lactose, maize starch, adipic acid) solvent (water) mixtures were measured at 2,450 MHz at a range of moisture contents (0-1.0 kg kg(-1), dry basis) and temperatures (20-70 A degrees C). The dielectric constant (epsilon'), loss factor (epsilon aEuro(3)) and penetration depth (d (p)) were found to be dependent on frequency, moisture content, temperature and powder type. For powder-water mixtures, a linear increase in the dielectric properties with moisture content was observed, whilst the temperature dependence was of quadratic form. The penetration depth was also significantly affected by temperature and moisture content. Although, epsilon aEuro(3) also increased with increasing temperature, variation with moisture content was temperature dependent. This information on dielectric properties is essential for mathematical description of the pharmaceutical product temperature history during microwave heating and for the design of microwave drying equipment.

Morphology dependence of the dielectric properties of epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers

Epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition on vicinal surfaces of (001)-oriented Nb-doped SrTiO3 (SrTiO3:Nb) single-crystal substrates. Atomic force microscopy was used to investigate the surface topography of the deposited films. The morphology of the films, of the BaTiO3/SrTiO3 interfaces, and of the column boundaries was investigated by cross-sectional high-resolution transmission electron microscopy. Measurements of the dielectric properties were performed by comparing BaTiO3 films and BaTiO3/SrTiO3 multilayers of different numbers of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm and linearly decreases with decreasing film thickness below a thickness of 75 nm. At the same thickness of 75 nm, the thickness dependence of the dielectric constant also exhibits a change in the linear slope both for BaTiO3 films and BaTiO3/SrTiO3 multilayers. This behaviour is explained by the change observed in the grain morphology at a thickness of 75 nm. For the thickness dependence of the dielectric constant, two phenomenological models are considered, viz. a 'series-capacitor' model and a 'dead-layer' model.

Microstructure and dielectric properties of epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers

Epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition (PLD) on (001)-oriented Nb-doped SrTiO3 (SrTiO3:Nb) substrates. Measurements of the dielectric properties were performed comparing BaTiO3 films and BaTiO3/SrTiO3 multilayers of different number of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm, and linearly decreases with decreasing film thickness below a thickness of 75 nm, and it is independent on the number of multilayers, pointing to some interface effect. The thickness dependence of the dielectric constant of BaTiO3 films and BaTiO3/SrTiO3 multilayers; exhibits a change in the linear slope at a thickness of 75 nm. This behavior is explained by the change observed in the morphology at a thickness of 75 nm. In order to explain the thickness dependence of the dielectric constant, two approaches are considered in this paper, viz. a "series capacitor" model and a "dead layer" model.

Preparation, Characterisation And Microwave Dielectric Properties Of Anbn-1o3n (N=5,6,8) Type Perovskite Compounds

The present study on the preparation , characterization and microwave dielectric properties of AnBn-1O3n (N=5,6,8) type perovskite compounds. The explored ceramics show dielectric constant between 11 and 54,quality factor in the range 2400 to 88900 GHz and Tf in the range -73 to +231ppm/0C.Most of the investigated cation deficient hexagonal perovskites show intermediate dielectric constant with high quality factors. This study gives a general introduction about material, scientific and technological aspects of DRs.Three important ,€r ,Q and Tf, used for the DR characterization are described. The relationship of the above parameters with the fundamental material characteristics is discussed. Different modes are excited when a DR is excited with suitable microwave spectrum of frequencies .A description of analytical determination of frequencies and construction of mode charts used for sample design and mode identification are also discussed. In this study several ceramics are developed for DR purposes, very little attention has been paid to grow the single crystals. It might be due to the fact that the difficulties and time involved in the growth of single crystals, big enough to function as microwave resonators make them expensive .However single crystals of these materials may have very high Q values. It is also possible that a better understanding of the dielectric properties in relation to the structure can be arrived using single crystals. Hence one of the future directions of dielectric resonator research should be to grow good quality single crystals of the above materials.

Effect of Different Forms of Poly o-Toluidine /Poly Vinyl Chloride Composites on Dielectric Propertiesin the Microwave Field

In this paper we report the preparation and dielectric properties of poly o-toluidine:poly vinyl chloride composites in pellet and film forms. The composites were prepared using ammonium persulfate initiator and HCl dopant. The characterization is done by TGA and DSC. The dielectric properties including dielectric loss, conductivity, dielectric constant, dielectric heating coefficient, absorption coefficient, and penetration depth were studied in the microwave field. An HP8510 vector network analyzer with rectangular cavity resonator was used for the study. Sbands (2-4 GHz), C band (5-8 GHz), and X band (8-12 GHz) frequencies were used in the microwave field. Comparisons between the pellet and film forms of composites were also included. The result shows that the dielectric properties in the microwave field are dependent on the frequency and on the method of preparation.