Organic device electrode fabricated by aluminum in nanopowder and bulk form and effect on device properties

Schottky barrier devices of metal/semiconductor/metal structure were fabricated using organic semiconductor polyaniline (PANI) and aluminium thin film cathode. Aluminium contacts were made by thermal evaporation technique using two different forms of metals (bulk and nanopowder). The structure and surface morphology of these films were investigated by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Grain size of the as-deposited films obtained by Scherrer's method, modified Williamson-Hall method, and SEM were found to be different. Current-voltage (I-V) characteristic of Schottky barrier device structure indicates that the calculated current density (J) for device fabricated from aluminium nanopowder is more than that from aluminium in bulk form.

Nanostructured CexZn1-xO thin films: Influence of Ce doping on the structural, optical and electrical properties

Thin films of CexZn1-xO thin films were deposited on glass substrates at 400 degrees C by nebulizer spray pyrolysis technique. Ce doping concentration (x) was varied from 0 to 10%, in steps of 2.5%. X-ray diffraction reveals that all the films have polycrystalline nature with hexagonal crystal structure and high preferential orientation along (002) plane. Optical parameters such as; transmittance, band gap energy, refractive index (n), extinction coefficient (k), complex dielectric constants (epsilon(r), epsilon(i)) and optical conductivity (sigma(r), sigma(i)) have been determined and discussed with respect to Ce concentration. All the films exhibit transmittance above 80% in the wavelength range from 330 to 2500 nm. Optical transmission measurements indicate the decrease of direct band gap energy from 3.26 to 3.12 eV with the increase of Ce concentration. Photoluminescence spectra show strong near band edge emission centered similar to 398 nm and green emission centered similar to 528 nm with excitation wavelength similar to 350 nm. High resolution scanning electron micrographs indicate the formation of vertical nano-rod like structures on the film surface with average diameter similar to 41 nm. Electrical properties of the Ce doped ZnO film have been studied using ac impedance spectroscopy in the frequency range from 100 Hz-1 MHz at different temperatures. (C) 2013 Elsevier B.V. All rights reserved.

Doping a Correlated Band Insulator: A New Route to Half-Metallic Behavior

We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a first order transition at a finite value U-AF between a paramagnetic band insulator and an antiferomagnetic Mott insulator. Upon doping, the system exhibits half-metallic ferrimagnetism over a wide range of doping and interaction strengths on either side of U-AF. Our results, based on dynamical mean field theory, suggest a new route to half metallicity, and will hopefully motivate searches for new materials for spintronics.

Effect Of Mo Doping On The Electrical Properties Of VO2 Phase

Solution combustion synthesis technique was adopted to synthesize V2O5, and Mo doped phases, The as-synthesized V2O5, has been reduced by a novel reduction technique to form VO2 typephase. The monophasic nature of the samples as revealed by XRD data and systematic shift in peak position indicated solid solubility up to 2 at % of Mo in VO2 lattice. The crystallite size was found to similar to 40 nm. Particle size measurement carried out using Transmission electron microscope ( TEM) agreed with XRD experiments. Scanning electron microscope revealed the morphology of the particles to be plate like and bimodal. Variation in the metal- insulator transition temperature as a function of doping was investigated by 4-probe electrical resistivity measurement on sintered ceramics.

Experimental investigation of forming limit, void coalescence and crystallographic textures of aluminum alloy 8011 sheet annealed at various temperatures

In this work, a combined forming and fracture limit diagram, fractured void coalescence and texture analysis have been experimentally evaluated for the commercially available aluminum alloy Al 8011 sheet annealed at different temperatures viz. 200 degrees C, 250 degrees C, 300 degrees C and 350 degrees C. The sheets were examined at different annealing temperatures on microstructure, tensile properties, formability and void coalescence. The fractured surfaces of the formed samples were examined using scanning electron microscope (SEM) and these images were correlated with fracture behavior and formability of sheet metals. Formability of Al 8011 was studied and examined at various annealing temperatures using their bulk X-ray crystallographic textures and ODF plots. Forming limit diagrams, void coalescence parameters and crystallographic textures were correlated with normal anisotropy of the sheet metals annealed at different temperatures. (C) 2013 Politechnika Wroclawska. Published by Elsevier Urban & Partner Sp. z o.o. All rights reserved.

Experimental and numerical studies on friction welding of thixocast A356 aluminum alloy

This paper highlights the role of globular microstructure on the weldability of semi-solid processed aluminum alloys via high temperature flow behavior. The investigation was carried out on the joining of thixocast A356 aluminum alloy components by friction welding. A thermomechanical model was developed to predict the temperature and stress distributions, as well as to identify the suitable and safe range of parameters. Good comparisons between numerical and experimental results were observed. In addition, metallographic examinations and hardness and tensile tests of the welded samples were carried out. It was found that the tensile strength of the joint is higher than the tensile strength of the parent material for the optimum set of parameters. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Synthesis and photoluminescence properties of a novel Sr2CeO4:Dy3+ nanophosphor with enhanced brightness by Li+ co-doping

A series of Dy3+ (0.5-9 mol%) and Li+ (0.5-3 mol%) co-doped strontium cerate (Sr2CeO4) nanopowders are synthesized by low temperature solution combustion synthesis. The effects of Li+ doping on the crystal structure, chemical composition, surface morphology and photoluminescence properties are investigated. The X-ray diffraction results confirm that all the samples calcined at 900 degrees C show the pure orthorhombic (Pbam) phase. Scanning electron microscopy analysis reveals that the particles adopt irregular morphology and the porous nature of the product. Room temperature photoluminescence results indicate that the phosphor can be effectively excited by near UV radiation (290 to 390 nm) which results in the blue (484 nm) and yellow (575 nm) emission. Furthermore, PL emission intensity and wavelength are highly dependent on the concentration of Li+ doping. The emission intensity is enhanced by similar to 3 fold with Li+ doping. White light is achieved by merely varying dopant concentration. The colour purity of the phosphor is confirmed by CIE co-ordinates (x = 0.298, y = 0.360). The study demonstrates a simple and efficient method for the synthesis of novel nanophosphors with enhanced white emission.

Dissimilar friction stir welding between aluminum alloy and magnesium alloy at a low rotational speed

A sound weld was obtained between 2024-T3 Al alloy and AZ31B-O Mg alloy dissimilar metal plates of 5 mm thickness, at a rotational speed of 300 rev min(-1) and at a welding speed of 50 mm min(-1). One of the parameter studied was, the effect of interface offset variation, on the quality and properties of the welded samples and on the thickness of intermetallic layer formed in the welded samples. The intermetallic layer at the midst of the weld volume contains intermetallic compounds Al12Mg17 and Al3Mg2. Highest tensile strength of 106.86 MPa, corresponding tensile joint efficiency of 44.52% and corresponding elongation 1.33% were obtained for the tensile sample, with interface offset of 0.66 mm from zero interface offset in retreating side and with approximate least intermetallic thickness of 1.2 mu m. Dissimilar friction stir welded joint samples had failed completely in brittle fracture mode; the position of tensile fracture was located at the midst of intermetallic layer, which had maximum hardness and minimum ductility. The nano hardness values fluctuate in the weld nugget owing to dynamic recrystallization of alloy materials and formation of brittle intermetallic compounds of alloy materials in the weld nugget; maximum hardness of 10.74 GPa occurred for the sample with least intermetallic thickness of 1.2 mu m. (C) 2014 Elsevier B.V. All rights reserved.

Hexamethylenetetramine mediated simultaneous nitrogen doping and reduction of graphene oxide for a metal-free SERS substrate

We report a one-pot hydrothermal synthesis of nitrogen doped reduced graphene oxide (N-rGO) and Ag nanoparticle decorated N-rGO hybrid nanostructures from graphene oxide (GO), metal ions and hexamethylenetetramine (HMT). HMT not only reduces GO and metal ions simultaneously but also acts as the source for the nitrogen (N) dopant. We show that the N-rGO can be used as a metal-free surface enhanced Raman spectroscopy (SERS) substrate, while the Ag nano-particles decorated N-rGO can be used as an effective SERS substrate as well as a template for decorating various other nanostructures on N-rGO.

Enhancing the photocatalytic efficiency of sprayed ZnO thin films through double doping (Sn plus F) and annealing under different ambiences

Doubly (Sn + F) doped zinc oxide (ZnO:Sn:F) thin films were deposited onto glass substrates using a simplified spray pyrolysis technique. The deposited films were annealed at 400 degrees C under two different ambiences (air and vacuum) for 2 h. The photocatalytic activity of these films was assessed through photocatalytic decolorization kinetics of Methylene Blue (MB) dye and the decolorization efficiency of the annealed films was compared with that of their as-deposited counterpart. The photocatalytic studies reveal that the ZnO:Sn:F films annealed under vacuum environment exhibits better photocatalytic efficiency when compared with both air annealed and as-deposited films. The SEM and TEM images depict that the surface of each of the films has an overlayer comprising of nanobars formed on a bottom layer, having spherical grains. The studies show that the diameter of the nanobars plays crucial role in enhancing the photocatalytic activity of the ZnO:Sn:F films. The structural, optical and electrical studies substantiate the discussions on the photocatalytic ability of the deposited films. (C) 2014 Elsevier B.V. All rights reserved.

Influence of melt pouring temperature and plate inclination on solidification and microstructure of A356 aluminum alloy produced using oblique plate

The preparation of semisolid slurry of A356 aluminum alloy using an oblique plate was investigated. A356 alloy melt undergoes partial solidification when it flows down on an oblique plate cooled from underneath by counter flowing water. It results in continuous formation of columnar dendrites on plate wall. Due to forced convection, these dendrites are sheared off into equiaxed/fragmented grains and then washed away continuously to produce semisolid slurry at plate exit. Melt pouring temperature provides required condition of solidification whereas plate inclination enables necessary shear for producing semisolid slurry of desired quality. Slurry obtained was solidified in metal mould to produce semisolid-cast billets of desired microstructure. Furthermore, semisolid-cast billets were heat treated to improve surface quality. Microstructures of both semisolid-cast and heat-treated billets were analyzed. Effects of melt pouring temperature and plate inclination on solidification and microstructure of billets produced using oblique plate were described. The investigations involved four different melt pouring temperatures (620, 625, 630 and 635 degrees C) associated with four different plate inclinations (30 degrees, 45 degrees, 60 degrees and 75 degrees). Melt pouring temperature of 625 degrees C with plate inclination of 60 degrees shows fine and globular microstructures and it is the optimum.

Response of shock wave deformation in AA5086 aluminum alloy

The AA5086 aluminum alloy sheets with different starting textures were subjected to shock wave deformation with an input impulse of similar to 0.2 Ns. Microstructural examination indicate no significant change in grain size; however, the evolution of substructure manifesting intra-granular misorientation was evident. The improvement in hardness indicates the absence of recovery and strain hardening during shock deformation. Shock deformed samples show characteristic texture evolution with high Brass {110}< 112 > component. The study demonstrates the viability of high velocity forming of AA5086 aluminum alloy sheet using shock wave. (C) 2014 Elsevier B.V. All rights reserved.

Excited electronic state decomposition mechanisms of clusters of dimethylnitramine and aluminum

In this report, electronically non-adiabatic decomposition pathways of clusters of dimethylnitramine and aluminum (DMNA-Al and DMNA-Al-2) are discussed in comparison to isolated dimethylnitramine (DMNA). Electronically excited state processes of DMNA-Al and DMNA-Al-2 are explored using the complete active space self-consistent field (CASSCF) and the restricted active space self-consistent field (RASSCF) theories, respectively. Similar to the nitro-nitrite isomerization reaction pathway of DMNA, DMNA-Al-n clusters also exhibit isomerization pathway. However, it involves several other steps, such as, first Al-O bond dissociation, then N-N bond dissociation followed by isomerization and finally NO elimination. Furthermore, DMNA-Al-n clusters exhibit overall exothermic decomposition reaction pathway and isolated DMNA shows overall endothermic reaction channel.

The contribution of grain boundary sliding in tensile deformation of an ultrafine-grained aluminum alloy having high strength and high ductility

An as-cast Al-7 % Si alloy was processed by high-pressure torsion (HPT) for up to 10 turns at temperatures of 298 or 445 K. The HPT-processed samples had ultrafine-grained structures and they were tested in tension at room temperature at various strain rates in the range from 1.0 x 10(-4) to 1.0 x 10(-2) s(-1). The contributions of grain boundary sliding (GBS) to the total strain were measured directly using atomic force microscopy. Samples simultaneously showing both high strength and high ductility contained the highest fractions of high-angle grain boundaries (HAGB) and exhibited the highest contributions from GBS, whereas samples showing high strength but low ductility gave negligible values for the sliding contributions. It is concluded that high strength and high ductility require both an ultrafine grain size and a high fraction of HAGB.

Effect of Pt doping on the gas sensing properties of porous chromium oxide films through a kinetic response analysis approach

The effect of doping trace amounts of noblemetals (Pt) on the gas sensing properties of chromium oxide thin films, is studied. The sensors are fabricated by depositing chromium oxide films on a glass substrate using a modified spray pyrolysis technique and characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The films are porous and nanocrystalline with an average crystallite size of similar to 30 nm. The typical p-type conductivity arises due to the presence of Cr vacancies, formed as a result of Cr non-stoichiometry, which is found to vary upon Pt doping. In order to analyze the effect of doping on the gas sensing properties, we have adopted a kinetic response analysis approach, which is based on Langmuir Adsorption isotherm (LA) theory. The sensor response is analyzed with equations obtained from LA theory and time constants as well as energies of adsorption-desorption are evaluated. It is seen that, Pt doping lowers the Schottky barrier height of the metal oxide semiconductor sensor from 222 meV to 172 meV. Subsequently the reduction in adsorption and desorption energies led to enhancement in sensor response and improvement in the kinetics of the sensor response i.e. the response time as well as recovery times of the sensor.