On lag controllers: Design and implementation

Sometimes it is inconvenient or expensive to open the loop of a system to insert lag controllers-for instance, when this system is an open-loop system. A new controller structure where the loop is not opened, and that allows the design of lag controllers as in the case where one can open the loop, is presented. This result can be used by educators in undergraduate courses that deal with classic control system theory, because it allows a better comprehension of the concept of lag compensation and provides a new method for its design and implementation. An example illustrates the application of the proposed method.

A method for plotting the complementary root locus using the root-locus (positive gain) rules

The root-locus method is a well-known and commonly used tool in control system analysis and design. It is an important topic in introductory undergraduate engineering control disciplines. Although complementary root locus (plant with negative gain) is not as common as root locus (plant with positive gain) and in many introductory textbooks for control systems is not presented, it has been shown a valuable tool in control system design. This paper shows that complementary root locus can be plotted using only the well-known construction rules to plot root locus. It can offer for the students a better comprehension on this subject. These results present a procedure to avoid problems that appear in root-locus plots for plants with the same number of poles and zeros.

Estudo das limitações impostas ao amortecimento de oscilações eletromecânicas pelos zeros da FTMA de controladores suplementares

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Melhora da estabilidade dinâmica de sistemas elétricos de potência multimáquinas usando o dispositivo facts thyristor-controlled series capacitor - TCSC

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

O sobre-sinal e a resposta inversa em sistemas de controle lineares contínuos no tempo

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis and electrical characterization of CaBi2Nb2O9 thin films deposited on Pt/Ti/SiO2/Si substrates by polymeric precursor method

We report the successful deposition of CaBi2Nb2O9 (CBN) thin films on platinum coated silicon substrates by polymeric precursor method. The CBN thin films exhibited good structural, dielectric and CBN/Pt interface characteristics. The leakage current of the capacitor structure was around 0.15 A cm(-2) at an applied electric field of 30 kV cm(-1). The capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 90 and 0.053, respectively. The remanent polarization and the drive voltage values were 4.2 C cm(-2) and 1.7 V at an applied voltage of 10 V. No significant fatigue was observed at least up to 10(8) switching cycles. (c) 2005 Elsevier B.V. All rights reserved.

Synthesis, ferroelectric and optical properties of (Pb,Ca)TiO3 thin films by soft solution processing

Calcium modified lead titanate sol was synthesized using a soft solution processing, the so-called polymeric precursor method. In soft chemistry method, soluble precursors such as lead acetate trihydrate, calcium carbonate and titanium isopropoxide, as starting materials, were mixed in aqueous solution. Pb0.7Ca0.3TiO3 thin films were deposited on platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure, dielectric and optical properties of the thin films were investigated. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors. The typical measured small signal dielectric constant and dissipation factor at a frequency of 100 kHz were 299 and 0.065, respectively, for a thin film with 230 nm thickness annealed at 600degreesC for 2 h. The remanent polarization (2P(r)) and coercive field (E-c) were 32 muC/cm(2) and 100 kV/cm, respectively. Transmission spectra were recorded and from them, refractive index, extinction coefficient, and band gap energy were calculated. Thin films exhibited good optical transmissivity, and had optical direct transitions. The present study confirms the validity of the DiDomenico model for the interband transition, with a single electronic oscillator at 6.858 eV. The optical dispersion behavior of PCT thin film was found to fit well the Sellmeir dispersion equation. The band gap energy of the thin film, annealed at 600degreesC, was 3.56 eV. The results confirmed that soft solution processing provides an inexpensive and environmentally friendly route for the preparation of PCT thin films.

Sufficients conditions for analysis of extrema in the step-response of the linear control systems

This note deals whith the problem of extrema which may occur in the step-response of a stable linear system with real zeros and poles. Some simple sufficients conditions and necessary conditions are presented for analyses when zeros located between the dominant and fastest pole does not cause extrema in the step-response. These conditions require knowledge of the pole-zero configuration of the corresponding transfer-function.

Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Differential dispersion relations with an arbitrary number of subtractions: A recursive approach

Making use of a recursive approach, derivative dispersion relations are generalized for an arbitrary number of subtractions. The results for both cross even and odd amplitudes are theoretically consistent at sufficiently high energies and in the region of small momentum transfer. © 1999 Published by Elsevier Science B.V. All rights reserved.

A linearly-tunable OTA-C sinusoidal oscillator for low-voltage applications

A low-voltage, low-power OTA-C sinusoidal oscillator based on a triode-MOSFET transconductor is here discussed. The classical quadrature model is employed and the transconductor inherent nonlinear characteristic with input voltage is used as the amplitude-stabilization element. An external bias VTUNE linearly adjusts the oscillation frequency. According to a standard 0.8μm CMOS n-well process, a prototype was integrated, with an effective area of 0.28mm2. Experimental data validate the theoretical analysis. For a single 1.8V-supply and 100mV≤VTUNE≤250mV, the oscillation frequency fo ranges from 0.50MHz to 1.125MHz, with a nearly constant gain KVCO=4.16KHz/mV. Maximum output amplitude is 374mVpp @1.12MHz. THD is -41dB @321mVpp. Maximum average consumption is 355μW.

A low-voltage low-sensitivity sinusoidal VCO for DPLL realizations

A quasi-sinusoidal linearly tunable OTA-C VCO built with triode-region transconductors is presented. Oscillation upon power-on is ensured by RHP poles associated with gate-drain capacitances of OTA input devices. Since the OTA nonlinearity stabilizes the amplitude, the oscillation frequency f0 is first-order independent of VDD, making the VCO adequate to mixed-mode designs. A range of simulations attests the theoretical analysis. As part of a DPLL, the VCO was prototyped on a 0.8μm CMOS process, occupying an area of 0.15mm2. Nominal f0 is 1MHz, with K VCo=8.4KHz/mV. Measured sensitivity to VDD is below 2.17, while phase noise is -86dBc at 100-KHz offset. The feasibility of the VCO for higher frequencies is verified by a redesign based on a 0.35μm CMOS process and VDD=3.3V, with a linear frequency-span of l3.2MHz - 61.5MHz.

Effects of the thyristor controlled serie capacitor on the electric power system

This work deals with the effects of the series compensation on the electric power system for small-signal stability studies. Therefore, the system is modeled admitting the existence of the compensation and then, the equations are linearized and a linear model is obtained for a single machine-infinite bus power system with a compensator installed. The resulting model with nine defined constants is very similar to the Heffron & Phillips linear model widely used on the existent literature. Finally, simulations are executed for an example system, to analyze the behavior of these constants when loading the system. © 2004 IEEE.

The nuclear matter effects in π0 photoproduction at high energies

The in-medium influence on π0 photoproduction from spin zero nuclei is carefully studied in the GeV range using a straightforward Monte Carlo analysis. The calculation takes into account the relativistic nuclear recoil for coherent mechanisms (electromagnetic and nuclear amplitudes) plus a time dependent multi-collisional intranuclear cascade approach (MCMC) to describe the transport properties of mesons produced in the surroundings of the nucleon. A detailed analysis of the meson energy spectra for the photoproduction on 12C at 5.5 GeV indicates that both the Coulomb and nuclear coherent events are associated with a small energy transfer to the nucleus (≲ 5 MeV), while the contribution of the nuclear incoherent mechanism is vanishing small within this kinematical range. The angular distributions are dominated by the Primakoff peak at extreme forward angles, with the nuclear incoherent process being the most important contribution above θπ0 ≲ 20. Such consistent Monte Carlo approach provides a suitable method to clean up nuclear backgrounds in some recent high precision experiments, such as the PrimEx experiment at the Jefferson Laboratory Facility.

A comparative study of the damping oscillation function of TCSC and UPFC

The main objective of this work is to analyze the ability of FACTS devices like TCSC and UPFC to damp low frequency oscillations and a POD controller is also included. A comparative study of damping effect of those devices IS carried out. The Power Sensitivity Model (PSM) is used to the representation of the electric power system. Sensibility analysis using the residue method shows the best place for the installation of FACTS and the procedure to determine POD parameters. ©2008 IEEE.