Comparative responses of two dominant Antarctic phytoplankton taxa to interactions between ocean acidification, warming, irradiance, and iron availability

We investigated the responses of the ecologically dominant Antarctic phytoplankton species Phaeocystis antarctica (a prymnesiophyte) and Fragilariopsis cylindrus (a diatom) to a clustered matrix of three global change variables (CO2, mixed-layer depth, and temperature) under both iron (Fe)-replete and Fe-limited conditions based roughly on the Intergovernmental Panel on Climate Change (IPCC) A2 scenario: (1) Current conditions, 39 Pa (380 ppmv) CO2, 50 µmol photons/m**2/s light, and 2°C; (2) Year 2060, 61 Pa (600 ppmv) CO2, 100 µmol photons/m**2/s light, and 4°C; (3) Year 2100, 81 Pa (800 ppmv) CO2, 150 µmol photons/m**2/s light, and 6°C. The combined interactive effects of these global change variables and changing Fe availability on growth, primary production, and cell morphology are species specific. A competition experiment suggested that future conditions could lead to a shift away from P. antarctica and toward diatoms such as F. cylindrus. Along with decreases in diatom cell size and shifts from prymnesiophyte colonies to single cells under the future scenario, this could potentially lead to decreased carbon export to the deep ocean. Fe : C uptake ratios of both species increased under future conditions, suggesting phytoplankton of the Southern Ocean will increase their Fe requirements relative to carbon fixation. The interactive effects of Fe, light, CO2, and temperature on Antarctic phytoplankton need to be considered when predicting the future responses of biology and biogeochemistry in this region.

Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates

This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature