Laser cooling of rubidium atoms from background vapor in diffuse light

In this paper we describe an experiment on laser cooling of Rb-87 atoms directly from a vapor background in diffuse light. Diffuse light is produced in a ceramic integrating sphere by multiple scattering of two laser beams injected through multimode fibers. A probe beam, whose propagation direction is either horizontal or vertical, is used to detect cold atoms. We measured the absorption spectra of the cold atoms by scanning the frequency of the probe beam, and observed both the absorption signal and the time of flight signal after we switched off the cooling light, from which we estimated the temperature and the number of cold atoms. This method is clearly attractive for building a compact cold atom clock.

Estratégia para validação de processos de esterilização por vapor saturado em autoclaves nas indústrias farmacêuticas

O objetivo deste trabalho foi criar uma metodologia de validação e revalidação dos processos de esterilização por calor úmido em autoclaves horizontais, destacando os pontos críticos do processo e concentrando esforços onde são realmente necessários. Foram realizados estudos de distribuição térmica, de penetração de calor e de desafio microbiológico na validação da autoclave STERIS FINNAQUA 6912. Com o objetivo de avaliar o impacto de uma mudança e compreender a relação entre os fatores e suas interações para o processo de esterilização, foi utilizado o planejamento fatorial 23 dos fatores densidade da carga (quantidade de itens), embalagem do produto e localização na câmara interna. Os estudos de distribuição térmica confirmaram a distribuição homogênea de calor na câmara interna durante o tempo de exposição a 121C. As temperaturas variaram entre 120,35C e 120,92C com desvio padrão máximo de 0,12C. Os estudos de penetração de calor confirmaram exposições equivalentes a 121C por 24 minutos em todos os itens da carga (F0 > 24 minutos). Em todos os estudos para cargas secas, os índices de capacidade do processo (Cpk) foram maiores que 1,33. Os ensaios de desafio microbiológico garantiram níveis de esterilidade (S.A.L.) maiores que 12 reduções logarítmicas em relação aos indicadores biológicos Geobacillus stearothermophilus. Não foi detectada a presença de endosporos sobreviventes nos 132 indicadores biológicos utilizados nos quatro ciclos desafiados. Com base no planejamento experimental verificou-se que, para o nível de significância de 95% , as mudanças nos fatores posição, embalagem e quantidade da carga não são significativas para o processo de esterilização, em autoclave com remoção forçada de ar. Já para o nível de significância de 90%, a interação Posição x Embalagem apresentou significância estatística no processo de esterilização com valor P de 0,080

I. The rate and mechanism of the vapor-phase reaction between water and parts-per-million concentrations of nitrogen dioxide. II. The rate and mechanism of the air oxidation of parts-per-million concentrations of nitric oxide in the presence of water vapor.

Part I

A study of the thermal reaction of water vapor and parts-per-million concentrations of nitrogen dioxide was carried out at ambient temperature and at atmospheric pressure. Nitric oxide and nitric acid vapor were the principal products. The initial rate of disappearance of nitrogen dioxide was first order with respect to water vapor and second order with respect to nitrogen dioxide. An initial third-order rate constant of 5.5 (± 0.29) x 10⁴ liter² mole^-2 sec^-1 was found at 25˚C. The rate of reaction decreased with increasing temperature. In the temperature range of 25˚C to 50˚C, an activation energy of -978 (± 20) calories was found.

The reaction did not go to completion. From measurements as the reaction approached equilibrium, the free energy of nitric acid vapor was calculated. This value was -18.58 (± 0.04) kilocalories at 25˚C.

The initial rate of reaction was unaffected by the presence of oxygen and was retarded by the presence of nitric oxide. There were no appreciable effects due to the surface of the reactor. Nitric oxide and nitrogen dioxide were monitored by gas chromatography during the reaction.

Part II

The air oxidation of nitric oxide, and the oxidation of nitric oxide in the presence of water vapor, were studied in a glass reactor at ambient temperatures and at atmospheric pressure. The concentration of nitric oxide was less than 100 parts-per-million. The concentration of nitrogen dioxide was monitored by gas chromatography during the reaction.

For the dry oxidation, the third-order rate constant was 1.46 (± 0.03) x 10⁴ liter² mole^-2 sec^-1 at 25˚C. The activation energy, obtained from measurements between 25˚C and 50˚C, was -1.197 (±0.02) kilocalories.

The presence of water vapor during the oxidation caused the formation of nitrous acid vapor when nitric oxide, nitrogen dioxide and water vapor combined. By measuring the difference between the concentrations of nitrogen dioxide during the wet and dry oxidations, the rate of formation of nitrous acid vapor was found. The third-order rate constant for the formation of nitrous acid vapor was equal to 1.5 (± 0.5) x 10⁵ liter² mole^-2 sec^-1 at 40˚C. The reaction rate did not change measurably when the temperature was increased to 50˚C. The formation of nitric acid vapor was prevented by keeping the concentration of nitrogen dioxide low.

Surface effects were appreciable for the wet tests. Below 35˚C, the rate of appearance of nitrogen dioxide increased with increasing surface. Above 40˚C, the effect of surface was small.

Equilibration of a liquid droplet-vapor-gas mixture downstream of a shock wave

The equations of motion for the flow of a mixture of liquid droplets, their vapor, and an inert gas through a normal shock wave are derived. A set of equations is obtained which is solved numerically for the equilibrium conditions far downstream of the shock. The equations describing the process of reaching equilibrium are also obtained. This is a set of first-order nonlinear differential equations and must also be solved numerically. The detailed equilibration process is obtained for several cases and the results are discussed.

Estudio de catalizadores basados en zeolitas HZSM-5 sometidas a tratamiento in situ con vapor de agua para la transformación de 1-buteno a propileno

El propileno es un monómero muy versátil y es la materia prima para una amplia gama de polímeros, intermedios y productos químicos. Esta versatilidad se debe a su estructura química: al igual que el etileno, el propileno contiene un doble enlace carbono - carbono, pero a diferencia de éste, el propileno contiene también un grupo metil - alílico (un grupo metilo adyacente a un doble enlace), otorgando a los químicos, diseñadores catalíticos e ingenieros dos distintas alternativas para llevar a cabo las trasformaciones químicas, por lo que son más numerosos los derivados del propilen o que del etileno (Plotkin, 2005).

Análisis exergético de planta de cogeneración con generación directa de vapor de proceso

[ES]La empresa de ingeniería SENER Ingeniería y sistemas S.A. tiene una larga experiencia en el desarrollo, diseño y construcción de plantas de cogeneración. La aplicación del análisis exergético a las plantas permite optimizar la eficiencia y reducir los costes. Este método basado en la exergía analiza si los recursos se utilizan de forma eficiente y proporciona las herramientas necesarias para mejorar su utilización. Este trabajo realiza dicho análisis exergético para posteriormente analizar los resultados y proponer mejoras para aumentar la eficiencia de la planta.

Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire

gamma-LiAlO2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (VTE) technique on (0 0 0 1) sapphire substrate. Microststructure of the gamma-LiAlO2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100 degrees C, the residual stress in the gamma-LiAlO2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees C. (c) 2005 Elsevier B.V. All rights reserved.

Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.

gamma-LiAlO2 single crystal grown by Czochralski technique and modified by vapor transport equilibration (VTE) technique

Large-sized (similar to 2 inch, 50.8 mm) gamma-UA102 single crystal has been grown by conventional Czochralski (Cz) method, but the crystal ha's a milky, dendriform center. The samples taken from transparent and milky parts were ground and examined by X-ray diffraction. All diffraction peaks could be indexed in gamma-LiAlO2. The crystal quality was characterized by X-ray rocking curve. The full-width at half-maximum (FWHM) values are 116.9 and 132.0 arcsec for transparent and milky parts, respectively. The vapor transport equilibrium (VTE) technique was introduced to modify the crystal quality. After 1000 degrees C/48 h, 1100 degrees C/48 h, 1200 degrees C/48 h VTE processes, the FWHM values dropped to 44.2 and 55.2 arcsec for transparent and milky part, respectively. The optical transmission of transparent part was greatly enhanced from 85% to 90%, and transmission of milky part from 75% to 80% in the range of 190 similar to 1900 nm at room temperature. When the VTE temperature was raised to 1300 degrees C, the sample cracked and FWHM values of transparent and milky parts were increased to 55.2 and 80.9 arcsec, respectively. By combining Cz technique with VTE technique, large-sized and high quality gamma-LiAlO2 crystal can be obtained.

Comparison of ZnO films grown on before- and after-vapor transport equilibration (VTE) LiAlO2 substrates by pulsed laser deposition (PLD)

About Phi 45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.

Composite substrate LiGaO2(001)/beta-Ga2O3(100) fabricated by vapor transport equilibration

Highly (001) orientation LiGaO2 layers have been successfully fabricated on (100) beta-Ga2O3 surface by vapor transport equilibration (VTE) technique. The temperature is very important for the WE treatment. At low temperature (800 degrees C), LiGaO(2)layers are textured. As the temperature was raised to 1100 C the layer becomes highly oriented in the [100] direction. It shows that the best temperature for WE treatment is 1100 degrees C. This technique is promising to fabricate small lattice mismatch composite substrate of LiGaO2 (001)//beta-Ga2O3 (100) for GaN films. (c) 2006 Elsevier B.V. All rights reserved.

Influence of vapor transport equilibration on the crystal quality and thermal-expansion coefficients of gamma-LiAlO2

gamma-LiAlO2 (LAO) single crystal has been grown by the Czochralski method. However, its quality was deteriorated due to lithium volatilization during the crystal growth. The full width at half maximum value drops from 116.9 to 44.2 arc sec after the LAO slice was treated by vapor transport equilibration at 1000, 1100, and 1200 degrees C/48 h in sequence. The treated slice shows higher optical transmission than the as-grown one in the measured wavelength range of 190-1900 nm, meanwhile, its absorption edge exhibits a blueshift. According to Raman spectra, the treated slice has homogeneous quality at different depths from surface to 0.01 mm. The expansion coefficient of the treated slice for a axis drops from 17.2398x10(-6)/degrees C to 16.5240x10(-6)/degrees C, and that for c axis drops from 10.7664x10(-6)/degrees C to 10.0786x10(-6)/degrees C.

Fabrication of beta-BaB2O4 layers on (001) Sr2+-doped alpha-BaB2O4 by vapor transport equilibration (VTE)

Crystalline beta-BBO layers have been successfully prepared on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates using vapor transport equilibration technique. The layers were characterized by X-ray diffraction, X-ray rocking curve and transmission spectra. The present results manifest that the VTE treatment time and powder ratio are important factors on the preparation of beta-BBO layers. beta-BBO layers with a highly (0 0 l) preferred orientation were obtained according to XRD profiles. The full width at half-maximum of the rocking curve for the layer is as low as about 1000 in., which shows the high crystallinity of the layer. These results reveal the possibility of fabricating beta-BBO (0 0 1) layers on (0 0 1)-oriented Sr2+-doped alpha-BBO substrates by VTE. (C) 2006 Elsevier Ltd. All rights reserved.

Structural and optical properties of a-plane ZnO thin films synthesized on γ-LiAlO2 (302) substrates by low pressure metal-organic chemical vapor deposition

Nonpolar a-plane (1120) ZnO thin films have been fabricated on gamma-LiAlO2 (302) substrates via the low-pressure metal-organic chemical vapor deposition. An obvious intensity variation of the E-2 mode in the Raman spectra indicates that there exhibits in-plane optical anisotropy in the a-plane ZnO thin films. Highly-oriented uniform grains of rectangular shape can be seen from the atomic force microscopy images, which mean that the lateral growth rate of the thin films is also anisotropic. It is demonstrated experimentally that a buffer layer deposited at a low temperature (200 degrees C) can improve the structural and optical properties of the epilayer to a large extent. (c) 2007 Elsevier B.V. All rights reserved.