The Effect of Dopants on the Microwave Dielectric Properties of Ba (Mg 0.33 Ta 0.67) O3 Ceramics

The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) is investigated. It is found that dopants such as Sb2O5, MnO, ZrO2, WO3, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is also discussed.

A new method for load matching in multimode microwave feating applicators based on the use of dielectric layer superposition

Usage of a dielectric multilayer around a dielectric Sample is studied as a means for improving the efficiency in multimode microwave- heating cavities. The results show that by using additional dielectric constant layers the appearance of undesired reflections at the sample-air interface is avoided and higher power -absorption rates within the sample and high -efficiency designs are obtained

Wideband Oylindrioal Dielectric Resonator Antenna Excited Using an L-strip Feed

A broadband cylindrical dielectric resonator antenna (DRA) energized with an L-strip feed is presented The novel exciting technique achieves a 2:1 VSWR bandwidth of 18%. The variation of bandwidth for different feed parameters is also studied

Comparison of Electromagnetic Band Gap and Split-Ring Resonator Microstrip Lines as Stop Band Structures

In this paper, microstrip lines magnetically coupled to splitring resonators (SRRs) are conquved to electromagnetic bundgup (EBG) nr,rrostrip lines in terns q/ their stop-heard penjbrnmrnce and dimensions. In bath types o/ trunsmis•siou lines, signal propagation is inhibited in it certain jequency bwuL For EBG microstrip lines, the central frequency of such a forbidden band is determined by the period of the structure, whereas in SRR-hased microstrip lines the position of the frequency gap depends on the quasi-static resonant frequency of the rings. The main relevant conrributiun of this paper is to provide a tuning procedure to control the gap width in SRR microstrip lines, and to show that by using SRRs, device dimensions ale much smaller than those required by EBGs in order to obtain similar stop-banal performance. This has been demonstrated by fill-wave electromagnetic simulations and experimentally verified from the characterization ql two fabricated microstrip lines: one with rectangular SRRs etched on the upper substrate side, and the other with a periodic perturbation cf'strip width. For similar rejection and 1-(;H,. gap width centered at 4.5 Gllz, it has been found that the SRR microstrip line is•,fve times shorter. In addition, no ripple is appreciable in the allowed band for the .SRR-hared structure, whereas due to dispersion, certain mismatch is expected in the EBG prototype. Due to the high-frequency selectivity, controllable gap width, and small dimensions, it is believed that SRR coupled to planar transmission lines can have an actual impact on the design of stop-band filters compatible with planar technology, and can be an alternative to present solutions based on distributed approaches or EBG

Microwave Absorbing Material Using Rubber & Carbon

Development of a new type of microwave absorbing material using rubber latex and carbon. for application in the interior lining of anechoic chambers, has been reported. Absorption coefficients of different combinations were estimated at X and S bands and the results were presented graphically. A combination of 50% rubber latex, 40% carbon and 10% graphite is found to form an ideal microwave absorbing material in the X and s bands

Phase modulation of microwave signals using point contact Germanium signal diodes

A forward - biased point contact germanium signal diode placed inside a waveguide section along the E -vector is found to introduce significant phase shift of microwave signals . The usefulness of the arrangement as a phase modulator for microwave carriers is demonstrated. While there is a less significant amplitude modulation accompanying phase modulation , the insertion losses are found to be negligible. The observations can be explained on the basis of the capacitance variation of the barrier layer with forward current in the diode

Dielectric Properties of Ba5Nb4O15 Ceramic

Ceramic dielectrics with high dielectric constant in the microwave frequency range are used as filters, oscillators [I], etc. in microwave integrated circuits (MICs) particularly in modern communication systems like cellular telephones and satellite communications. Such ceramics, known as 'dielectric resonators (DRs),donot only offer miniaturisation and reduce the weight of the microwave components. but also improve the efficiency of MICs

Preparation and Microwave Characterisation of Ba2-xSrx Ti9 O20 Cermics

Ceramics of composition BaO-Ln2O3-STiO2 have been prepared with four elements (Ln=La,Pr,Nd.Sm) by a conventional solid state ceramic preparation route and the dielectric properties measured in the microwave frequency range

Microwave Dielectric Resonator Based on Ba[(Bi0.2 D3+0.3)Nb0.5]O3(D3+=Y,Pr,Sm,Gd,Dy,Er)

Dielectric resonator ceramics with composition formula Ba[(D3+0.3 Bi0.2)Nb0.5]O3,where D3+=Y,Pr,Sm,Gd,Dy and Er,were prepared by the conventional ceramic preparation route

Ba(Tb1/2Nb1/2)03: A New Ceramic Microwave Dielectric Resonator

A new microwave dielectric resonator Ba(Tb1/2Nb1/2)03 has been prepared and characterized in the microwave frequency region. 1 wt% CeO2 is used as additive to reduce the sintering temperature. The sintered samples were characterized by XRD, SEM and Raman spectroscopic methods. Microwave DR properties such as er, Q factor and temperature-coefficient of resonant frequency (Ti) have been measured using a HP 8510 B Network Analyzer. Cylindrical DRs of Ba(Tb1/2Nbi/2)03 showed high Er (~ 37), high Q (~3,200) and low Tf (~10 ppm /°C) at 4 GHz and hence are useful for practical applications

Microwave dielectric properties of MO -La2O3-TiO2 (M = Ca, Sr, Ba) ceramics

Single-phase polycrystalline ceramics in the MO-La2O3-Ti02 (M = Ca, Sr, Ba) system, such as cation-deficient hexagonal perovskites CaLa4Ti4O15, SrLa4Ti4O15, BaLa4Ti4O15, and Ca2La4Ti5O18 and the orthorhombic phases CaLa4Ti5O17 and CaLa8Ti9O31, were prepared through the solid-state ceramic route. The phases and structure of the ceramics were analyzed through x-ray diffraction and scanning electron microscopy. The microwave dielectric properties of the ceramics were studied using a network analyzer. The investigated ceramics show high Er in the range 42 to 54, high quality factors with Q x f in the range 16,222 to 50,215 GHz, and low Tf in the range -25 to +6 ppm3/°C. These high dielectric constant materials with high Q x f up to 50,215 GHz are suitable for applications where narrow bandwidth and extremely low insertion loss is necessary, especially at frequencies around 1.9 GHz