Pond construction: design and layout of ponds

(4pp.)

The energy spectra of uranium atoms sputtered from uranium metal and uranium dioxide targets

The energy spectra of ²³⁵U atoms sputtered from a 93% enriched ²³⁵U metal foil and a hot pressed ²³⁵U0₂ pellet by an 80 keV ⁴⁰Ar⁺ beam have been measured in the range 1 eV to 1 keV. The measurements were made using a mechanical time-of-flight spectrometer in conjunction with the fission track technique for detecting ²³⁵U. The design and construction of this spectrometer are discussed in detail, and its operation is mathematically analyzed.

The results of the experiment are discussed in the context of the random collision cascade model of sputtering. The spectrum obtained by the sputtering of the ²³⁵U metal target was found to be well described by the functional form E(E+E_b)^-2.77, where E_b = 5.4 eV. The ²³⁵U0₂ target produced a spectrum that peaked at a lower energy (~ 2 eV) and decreased somewhat more rapidly for E ≳ 100 eV.

Dilution refrigeration and a calorimetric measurement of the quadruple coupling constant in rhenium metal

A dilution refrigerator has been constructed capable of producing steady state temperatures less than .075°K. The first part of this work is concerned with the design and construction of this machine. Enough theory is presented to allow one to understand the operation and critical design factors of a dilution refrigerator. The performance of our refrigerator is compared with the operating characteristics of three other dilution refrigerators appearing in the present literature.

The dilution refrigerator constructed was used to measure the nuclear contribution to the low temperature specific heat of a pure, single-crystalline sample of rhenium metal. Measurements were made in magnetic fields from 0 to 12.5 kOe for the temperature range .13°K - .52°K. The second part of this work discusses the results of these experiments. The expected nuclear contribution is not found when the sample is in the superconducting state. This is believed to be due to the long spin-lattice relaxation times in superconductors. In the normal state, for the temperature range studied, the nuclear contribution is given by A/T² where A = .061 ± .002 millijoules-K/mole. The value of A is found to increase to A = .077 ± .004 millijoules-K/mole when the sample is located in a magnetic field of 12.5 kOe.

From the measured value of A the splitting of the energy levels of the nuclear spin system due to the interaction of the internal crystalline electric field gradients with the nuclear quadrupole moments is calculated. A comparison is made between the predicted and measured magnetic dependence of the specific heat. Finally, predictions are made of future nuclear magnetic resonance experiments which may be performed to check the results obtained by calorimetery here and further, to investigate existing theories concerning the sources of electric field gradients in metals.

Numerical analysis and comparison of three metal-oxide-type super-resolution near field structures

Based on the Fresnel-Kirchkoff diffraction theory, we build up a Gaussian diffraction model of metal-oxide-type super-resolution near field structure (super-RENS), which can describe far field optical properties. The spectral contrast induced by refractive index and the structural changes in AgOx, PtOx and PdOx thin films, which are the key functional layers in super-RENS, are studied by using this model. Comparison results indicate that the spectral contrast intensively on laser-induced distribution and change of the refractive index in the metal-oxide films. The readout mechanism of the metal-oxide-type super-RENS optical disc is further clarified. This Gaussian diffraction model can be used as a simple and effective method for choosing proper active materials in super-RENS.

Investigation of the effect of fluoride ions introduction on structural, OH- content and up-conversion luminescence properties in Er3+-doped heavy metal oxide glasses

Effect of fluoride ions introduction on structural, OH- content and up-conversion luminescence properties in Er3+-doped heavy metal oxide glasses have been investigated. Structure was investigated, indicating that fluoride has an important influence on the phonon density, maximum phonon energy of host glasses. With increasing fluoride content, the up-conversion luminescence intensity and quantum efficiencies increase notably, which could not be explained only by the maximum phonon energy change of host glasses. Our results show that, with the introduction of PbF2, the decrease of phonon density and OH- content contributes more to the enhanced up-conversion emissions than that of maximum phonon energy. (c) 2005 Elsevier B.V. All rights reserved.

Structural and up-conversion luminescence properties in Tm (3+)/Yb3+-codoped heavy metal oxide-halide glasses

Tm3+/Yb3+-codoped heavy metal oxide-halide glasses have been synthesized by conventional melting and quenching method. Structural properties were obtained based on the Raman spectra, indicating that halide ion has an important influence on the phonon density and maximum phonon energy of host glasses. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions (1)G(4) -> H-3(6) and (1)G(4) -> H-3(4), respectively, were observed at room temperature. The possible up-conversion mechanisms are discussed and estimated. With increasing halide content, the up-conversion luminescence intensity and blue luminescence lifetimes of Tm3+ ion increase notably. Our results show that with the substitution of halide ion for oxygen ion, the decrease of phonon density and maximum phonon energy of host glasses both contribute to the enhanced up-conversion emissions. (c) 2005 Elsevier B.V. All rights reserved.

Cellular and molecular responses of zebrafish to legacy and emerging pollutants: the specific cases of PAHs and metal oxide nanoparticles

270 p.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation. © 2013 AIP Publishing LLC.

Design and optimization of planar mesa termination for diamond Schottky barrier diodes

In this paper, we present planar mesa termination structure with high k dielectric Al2O3 for high-voltage diamond Schottky barrier diode. Analysis, design, and optimization are carried out by simulations using finite element technology computer-aided design (TCAD) Sentaurus Device software. The performances of planar mesa termination structure are compared to those of conventional field plate termination structure. It is found that optimum geometry of planar mesa terminated diode requires shorter metal plate extension (1/3 of the field plate terminated diode). Consequently, planar mesa terminated diode can be designed with bigger Schottky contact to increase its current carrying capability. Breakdown performance of field plate termination structure is limited at 1480 V due to peak electric field at the corner of Schottky contact (no oxide breakdown occurs). In contrast, peak electric field in planar mesa termination structure only occurs in the field oxide such that its breakdown performance is highly dependent on the oxide material. Due to Al2O3 breakdown, planar mesa termination structure suffers premature breakdown at 1440 V. Considering no oxide breakdown occurs, planar mesa termination structure can realize higher breakdown voltage of 1751 V. Therefore, to fully realize the potential of planar mesa terminated diode, it is important to choose suitable high k dielectric material with sufficient breakdown electric field for the field oxide. © 2013 Elsevier B.V.

Oxide electronics for imaging and displays

Despite material weaknesses, considerable progress has been made in designing large area systems such as displays and imaging arrays. This talk will address the various large area technologies, and in particular, review amorphous oxide semiconductors and associated design approaches, along with driving schemes for displays, imaging and other applications. © 2013 IEEE.

Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors

A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.