Low-cost high-efficiency GaN LED on large-area si substrate

The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.

3 Gbit/s LED-based step index plastic optical fiber link using multilevel pulse amplitude modulation

Multilevel PAM is investigated for a LED-based SI-POF link. Using PAM-8, transmission at a record 3 Gbit/s is demonstrated for a maximum length of 25 m step index POF with offline post-receiver processing. © 2013 OSA.

Switch mode constant current LED Driver with high efficiency, high precision and wide dimming ratio

A high efficiency hard switching constant current LED driver is presented with high overall efficiency, high current precision, high LED efficacy, flicker-free and wide constant current dimming ratio. The high stable lighting source provides the best solution for office light, reading light and LCD backlight. © 2013 IEEE.

GaN基材料的生长及蓝光LED的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

新型结构LED大屏显示系统的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

立方相InGaN的生长及LED有源区的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaN基UV-LED材料生长和特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaN基LED发光效率提高方法研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

LED 在液晶显示背光源应用中的关键技术研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

AlInGaN四元合金的MOCVD生长及InGaN/AlInGaN LED器件性能研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

氮化物LED 材料生长及垂直结构器件制备技术研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GaN基LED新型透明电极的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

微纳光学结构增强GaN LED出光效率研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-13T08:02:10Z No. of bitstreams: 1 博士毕业论文_刘宏伟.pdf: 3404178 bytes, checksum: e5e1511387570aa5c92a4cc48df47e81 (MD5)

基于横向外延生长的GaN LED 特性研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-13T08:18:55Z No. of bitstreams: 1 毕业论文_王良吉.pdf: 5299270 bytes, checksum: 6b0aeaa63a52321331f321143a5b0a09 (MD5)

Spin injection in the multiple quantum-well LED structure with the Fe/AlO (x) injector

A spin-injection/-detection device has been fabricated based on the multiple quantum well light emitting diode (LED) structure. It is found that only a broad electroluminescence (EL) peak of a full width at half maximum of 8.6 nm appears at the wavelength of 801 nm in EL spectra with a circular luminescence polarization degree of 18%, despite PL spectra always show three well resolved peaks. The kinetic energy gained by injected electrons and holes in their drift along opposite directions broadens the EL peak, and makes three EL peaks converge together. The same process also destroys the injected spin polarization of electrons mainly dominated by the Bir-Aronov-Pikus spin relaxing mechanism.