Quantum Efficiency And Temperature Coefficients Of Gainp/Gaas Dual-Junction Solar Cell

GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.

Compact continuous-wave blue lasers by direct frequency doubling of laser diodes with periodically poled lithium niobate waveguide crystals

A compact continuous-wave blue laser has been demonstrated by direct frequency doubling of a laser diode with a periodically poled lithium niobate (PPLN) waveguide crystal. The optimum PPLN temperature is near 28 degreesC, and the dependence of waveguide crystals on crystal temperature is less sensitive than that of bulk crystals. A total of 14.8 mW of 488-nm laser power has been achieved. (C) 2005 Optical Society of America.

Practical vortex diodes from pinning enhanced YBa2 Cu 3 O7-δ

We identify a scalable, practical route to fabricating a superconducting diode. The device relies for its function on the barrier to flux vortex entry being reduced at the substrate interface of a superconducting pinning enhanced YBa2 Cu3 O7-δ nanocomposite film. We show that these composite systems provide a practical route to fabricating a useful superconducting diode and demonstrate the rectification of an alternating current. © 2009 American Institute of Physics.

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

Efficiency improvement of organic light-emitting diodes using 8-hydroxy-quinolinato lithium as an electron injection layer

Organic light-emitting diodes (OLEDs) using tris-(8-hydroxy-quinolinato) aluminum (Alq(3)) as an emitter, 8-hydroxy-quinolinato lithium (Liq) as an electron injection layer, were prepared. Experimental results show that the efficiency of device with Liq is three times higher than that without Liq. The device using Liq as an injection layer is less sensitive in efficiency to the Liq thickness than that using LiF. In addition to the Alq3 based devices, Liq is also very effective as an electron injection layer for 4,4'-bis(2,2-diphenylvinyl)-1,1'-biphenyl based blue OLED and poly (2-methoxy,5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene) based orange polymer OLED. (c) 2004 Elsevier B.V. All rights reserved.