555 resultados para Gan


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GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

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En el ámbito aragonés durante los últimos diez años se han llevado a cabo numerosas actuaciones de distintos intereses y calados en el patrimonio histórico artístico vinculado principalmente a edificios destinados al culto religioso. Cabe destacar la restauración de cuatro templos de la Comarca del Bajo Martín, en la provincia de Teruel.

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"Meiji 32-nen... shuppan ontodokezumi"--Colophon.

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Caption title.

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On double leaves, oriental style, in 2 cases.

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Title of original: Bij't licht van de oorlogsvlam.