Growth and characterization of InGaN/GaN core-shell structures by molecular beam epitaxy

Autoria(s): Albert, Steven; Bengoechea Encabo, Ana; Sabido Siller, María del Carmen; Müller, M.; Schmidt, G.; Metzner, S.; Veit, P.; Bertram, F.; Sánchez García, Miguel Angel; Christen, J.; Calleja Pardo, Enrique
Data(s)

2014
Formato

application/pdf
Identificador

http://oa.upm.es/36787/
Idioma(s)

eng
Relação

http://oa.upm.es/36787/1/INVE_MEM_2014_194449.pdf
Direitos

http://creativecommons.org/licenses/by-nc-nd/3.0/es/

info:eu-repo/semantics/openAccess
Fonte

8th International Workshop on Nitride Semicon- ductors (IWN 2014) | 8th International Workshop on Nitride Semicon- ductors (IWN 2014) | 24/08/2014 - 29/08/2014 | Wroclaw, Poland
Palavras-Chave #Física
Tipo

info:eu-repo/semantics/conferenceObject

Ponencia en Congreso o Jornada

PeerReviewed
Acesso ao item digital