Effect of humidity on microstructure and properties of YBCO film prepared by TFA-MOD method

Epitaxial YBCO superconducting films were deposited on the single crystal LaAlO3 (001) substrate by metal organic deposition method. All YBCO films were fired at 820 degrees C in humidity range of 2.6%-19.7% atmosphere. Microstructure of YBCO thin films was analyzed by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Superconducting properties of YBCO films were measured by four-probe method. XRD results showed that the second phase (such as BaF2)and a-axis-oriented grains existed in the films prepared at 2.6% humidity condition; a-axis-oriented grains increased in the film prepared at higher than 4.2% humidity condition; almost pure c-axias-oriented grains existed in the films fired at 4.2% humidity condition. Morphologies of the YBCO films showed that all films had a smooth and crack-free surface. YBCO film prepared at 4.2% humidity condition showed J(c) value of 3.3 MA/cm(2) at 77 K in self-field.

Non-resonant third-order non-linear optical properties of amorphous GeSe2 film

The real and imaginary parts of third-order susceptibility of amorphous GeSe2 film were measured by the method of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultra fast pulses. The results indicated that the values of real and imaginary parts were 8.8 x 10(-12) esu and -3.0 x 10(-12) esu, respectively. An amorphous GeSe2 film also showed a very fast response within 200 fs. The ultra fast response and large third-order non-linearity are attributed to the ultra fast distortion of the electron orbits surrounding the average positions of the nucleus of Ge and Se atoms. (c) 2005 Elsevier B.V. All rights reserved.

Structure and properties of amorphous thin film for optical data storage

In this paper the magnetic and magneto-optical properties of amorphous rare earth-transition metal (RE-TM) alloys as well as the magnetic coupling in the multi-layer thin films for high density optical data storage are presented. Using magnetic effect in scanning tunneling microscopy the clusters structure of amorphous RE-TM thin films has been observed and the perpendicular magnetic anisotropy in amorphous RE-TM thin films has been interpreted. Experimental results of quick phase transformation under short pulse laser irradiation of amorphous semiconductor and metallic alloy thin films for phase change optical recording are reported. A step-by-step phase transformation process through metastable states has been observed. The waveform of crystallization propagation in micro-size spot during laser recording in amorphous semiconductor thin films is characterized and quick recording and erasing mechanism for optical data storage with high performance are discussed. The nonlinear optical effects in amorphous alloy thin films have been studied. By photo-thermal effect or third order optical nonlinearity, the optical self-focusing is observed in amorphous mask thin films. The application of amorphous thin films with super-resolution near field structure for high-density optical data storage is performed. (c) 2007 Elsevier B.V. All rights reserved.

Effect of water content in sol on optical properties of hybrid sol-gel derived TiO2/SiO2/ormosil film

Sol-gel derived TiO2/SiO2/ormosil hybrid planar waveguides have been deposited on soda-lime glass slides and silicon substrates, films were heat treated at 150 degreesC for 2 h or dried at room temperature. Different amounts of water were added to sols to study their impacts on microstructures and optical properties of films. The samples were characterized by m-line spectroscopy, Fourier transform infrared spectroscopy (FT-IR), UV/VIS/NIR spectrophotometer (UV-vis), atomic force microscopy (AFM), thermal analysis instrument and scattering-detection method. The refractive index was found to have the largest value at the molar ratio H2O/OR = 1 in sol (OR means -OCH3, -OC2H5 and -OC4H9 in the sol), whereas the thickest film appears at H2O/OR = 1/2. The rms surface roughness of all the films is lower than 1.1 nm, and increases with the increase of water content in sol. Higher water content leads to higher attenuation of film. (C) 2004 Elsevier B.V. All rights reserved.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Optical properties of ZnO thin film on gamma-LiAlO2 substrate grown by pulsed laser deposition

Optical properties were investigated of ZnO thin films grown oil (100) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown oil (100) LAO substrate at the substrate temperature of 550 degrees C. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 urn is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition. (c) 2005 Elsevier B.V. All rights reserved.

Optical properties and microstructure of Ta2O5 biaxial film

This study investigates the optical properties and microstructure of Ta2O5 film deposited with the glancing angle deposition technique. The tilted nanocolumn microstructure, examined with scanning electron microscopy, induces the optical anisotropy of thin film. The optical properties of thin film are characterized with an inverse synthesis method. Based on the Cauchy model, the dispersion equations of optical constants of film are determined from the transmittance spectra measured at normal and oblique incidence over 400-800 nm. The starting values derived with an envelope method quicken the optimization process greatly. The dispersion of the principal indices N-1, N-2, and N-3 and the thickness d of thin film are presented statistically. A good agreement between the measured optical properties and theoretical calculation is obtained, which validates the model established for thin film produced by glancing angle deposition. (C) 2008 Optical Society of America

Electrical properties of LiNbO3 (electrolyte)/Cu (anode) bi-layers

In this work specific film structures of Li-Nb-O/Li/Li-Nb-O are investigated by AC Impedance Spectroscopy measurements at different temperatures. This gives the opportunity to investigate properties of the material itself and, at the same time, to consider the influence of the grain boundaries on the ionic behavior of the polycrystalline Lithium Niobate. On the other hand, LiNbO3/Li/Cu multi-layers are studied as electrolyte/anode bi-layers and potential parts of "Li-free" microbatteries. The Li deficiency in the as deposited Li-Nb-O films is cured by forming a "sandwich" of Li-Nb-O/Li/Li-Nb-O, which after annealing becomes ionic conductor. The electrical behavior of an annealed film depends on two sources. The first is due to properties of the material itself and the second is based on the network of the grain boundaries. The average size of the grains is strongly influenced by the structure of the ohmic-contact/substrate. The electrical behavior of the electrolyte/anode interface of the "Li-free" structure LiNbO3/Li/Cu/Au is very similar to the impedance measurements of the single LiNbO3 single films. The whole multilayer structure, though, presents a third relaxation time which is consistent of a small resistance. This resistance is independent of temperature and it seems that is due to the metallic interface Li/Cu/Au. © 2010 Elsevier B.V. All rights reserved.