Ação concomitante da irradiação e quimioterapia no coração de ratas Wistar

O Câncer de mama (CM) é hoje o tipo de câncer mais incidente entre as mulheres, com a estimativa de 53 mil novos casos para o ano de 2013, segundo o Instituto Nacional do Câncer (INCA). É considerada uma doença de bom prognóstico, principalmente quando diagnosticada na sua fase mais precoce. A evolução no diagnóstico, e nas técnicas de tratamento para o CM, que incluem a quimioterapia e/ou radioterapia, aumentaram a expectativa de sobrevida para este tipo de câncer. Uma das complicações tardias induzidas pelo tratamento desta doença é a cardiotoxicidade. O termo cardiotoxicidade abrange uma série de efeitos colaterais, que incluem arritmias, alterações na pressão arterial, isquemia do miocárdio, trombose ou insuficiência cardíaca. É, por isso, fundamental entender os mecanismos envolvidos no desenvolvimento da toxicidade cardíaca para o sucesso do tratamento dos pacientes com CM. Este trabalho teve como objetivo avaliar os efeitos cardíacos tardios induzidos pela irradiação e quimioterapia, simulando um tratamento para o CM, em ratas Wistar. Ratas Wistar, com aproximadamente 3 meses de idade, foram divididas em: grupo controle, grupo que recebeu quimioterapia + irradiação (TC+IR), e grupo que recebeu apenas irradiação (IR). A quimioterapia foi administrada em 4 ciclos, com intervalo de 1 semana entre eles. A irradiação na região do coração foi realizada em dose única, de 20Gy, em um campo de 2x2 cm2. Os ratos foram submetidos à eutanásia 5 meses após o término dos tratamentos, para que os efeitos tardios pudessem ser avaliados. Vários estudos foram conduzidos: ecocardiografia para observar as alterações funcionais do coração; PCR em tempo real para detectar alterações no nível mRNA de procolágeno tipo I, TGF-β1, angiotensinogênio, renina, ECA, AT1, VEGF e razão Bax/;bcl2, no tecido do ventrículo esquerdo (VE); Além de ensaios histológicos para avaliar o aspecto do tecido cardíaco do VE. Resultados e discussão Os resultados obtidos indicam um processo de remodelamento cardíaco após os tratamentos para o CM. Sugere-se que este remodelamento inicie-se com a diminuição de vasos no VE, causada pelos tratamentos, conforme os resultados da estereologia e do PCR para VEGF. Em seguida mostrou-se hipertrofia dos cardiomiócitos, o aumento da expressão de procolágeno e TGF-β1 e de tecido conjuntivo neste tecido. E associado a estes resultados, mostrou-se a participação dos sistema renina angiotensina cardíaco neste processo de remodelamento. Porém, apesar de todas estas alterações terem ocorrido em ambos os grupos tratados, apenas o grupo que recebeu irradiação e quimioterapia concomitantemente apresentou alteração da função cardíaca, na ecocardiografia. Sugere-se, desta forma, que a associação destas terapias seja mais lesiva ao coração, do que a irradiação aplicada exclusivamente. Conclusão Os objetivos do trabalho foram alcançados, e pode-se entender melhor as vias envolvidas na cardiotoxicidade. Este é um estudo inédito, o assunto abordado é recente, e de sumo importância para o desenvolvimento de novas estratégias de tratamento para o CM, onde sejam consideradas as complicações cardíacas tardias envolvidas.

Allelopathic interactions between the Potamogeton spp and toxic cyanobacteria (Microcystis aeruginosa)

This study aimed to investigate the allelopathic activities between 3 Potamogeton spp. (Potamogeton maackianus, Potamogeton malaianus and Potamogeton pectinatus) and the toxic cyanobacteria (Microcystis aeruginosa). All Potamogeton spp inhibited the growth of M. aeruginosa in both coexistence and exudates experiments. Inhibition of M. aeruginosa growth by plant exudates depended strongly on the biomass of P malaianus. Initial pH (6.5-9.8) did not influence the inhibitory effects of P. malaianus exudates. However, the M. aeruginosa inhibited the net photosynthesis and respiration of all three pondweed test spp.. The decreases in photosynthesis and respiration were probably caused by the toxic compounds released by M. aeruginosa, rather than its shading effects. The M. aeruginosa also decreased the nutrients (phosphorus and nitrogen) uptake rates of macrophytes. The absorption rates of phosphorus and nitrogen and net photosynthesis were decreased sharply. These results will help to restore submerged plants in eutrophic waters.

Allelopathic effects of phenolic compounds present in submerged macrophytes on Microcystis aeruginosa

In laboratory studies, the allelopathic effects of 3 (Hydrocharitaceae family) submerged macrophytes (Elodea nuttallii (Planch) St. John, Hydrilla verticillata (L.f.) Royle and Vallisneria spiralis L.) were investigated on two strains of Microcystis aeruginosa. Both aqueous methanol extracts and exudates of three macrophytes inhibited the growth of both strains of Microcystis aeruginosa, After 3-days culture, E nuttallii, H. verticillata and V. spiralis excreted 0.8, 0.3 and 1.0% of total phenolic compounds (TPC), respectively, into the surrounding water. After removing phenolic compounds by polyvinylpolypyrrolidone (PVPP)), the plant exudates showed very weak activity. The inhibitory rates of exudates of E. nuttallii, H. verticillata and V. spiralis, against non-toxic M. aeruginosa were decreased by 35.7, 43.4 and 59.1% respectively. Thus 3 submerged macrophytes released the phenolic compounds into the surrounding water, to inhibit the growth of M. aeruginosa. This information may help us in understanding the mechanism of allelopathy in aquatic ecosystems and to control the algal bloom in eutrophic water bodies.

Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Thick nonpolar (10 (1) over bar0) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (10 (1) over bar(3) over bar) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [DOI: 10.1143/JJAP.47.3346]

Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

The crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (10 (1) over bar(3) over bar) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2 X 10(5) cm(-2), revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement. (C) 2009 Elsevier B.V. All rights reserved.

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire by hydride vapor phase epitaxy (HVPE) are investigated using nanoindentation with a Berkovich indenter, cathodoluminescence (CL), and Raman microscopy. Results show that nonpolar GaN is more susceptible to plastic deformation and has lower hardness than c-plane GaN. After indentation, lateral cracks emerge on the nonpolar GaN surface and preferentially propagate parallel to the < 11 (2) over bar0 > orientation due to anisotropic defect-related stresses. Moreover, the quenching of CL luminescence can be observed to extend exclusively out from the center of the indentations along the < 11 (2) over bar0 > orientation, a trend which is consistent with the evolution of cracks. The recrystallization process happens in the indented regions for the load of 500 mN. Raman area mapping indicates that the distribution of strain field coincides well with the profile of defect-expanded dark regions, while the enhanced compressive stress mainly concentrates in the facets of the indentation.

Hillocks and hexagonal pits in a thick film grown by HVPE

A GaN film with a thickness of 250 mu m was grown on a GaN/sapphire template in a vertical hydride vapor phase epitaxy (HVPE) reactor. The full-width at half-maximum (FWHM) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. A sharp band-edge emission with a FWHM of 20 meV at 50 K was observed, which corresponded to good crystalline quality of the film. Some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. Meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. The strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 Elsevier Ltd. All rights reserved.

Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

Misfit defects in a 3C-SiC/Si (001) interface were investigated using a 200 kV high-resolution electron microscope with a point resolution of 0.194 nm. The [110] high-resolution electron microscopic images that do not directly reflect the crystal structure were transformed into the structure map through image deconvolution. Based on this analysis, four types of misfit dislocations at the 3C-SiC/Si (001) interface were determined. In turn, the strain relaxation mechanism was clarified through the generation of grow-in perfect misfit dislocations (including 90 degrees Lomer dislocations and 60 degrees shuffle dislocations) and 90 partial dislocations associated with stacking faults. (C) 2009 American Institute of Physics. [doi:10.1063/1.3234380]

Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire

We have investigated the hydride vapor-phase epitaxy growth of (10 (1) over bar(3) over bar)-oriented GaN thick films on patterned sapphire substrates (PSSs) (10 (1) over bar0). From characterization by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and photoluminescence (PL), it is determined that the crystalline and optical qualities of (10 (1) over bar(3) over bar) GaN epilayers grown on the cylindrical PSS are better than those on the flat sapphire. However, two main crystalline orientations (10 (1) over bar(3) over bar) and (11 (2) over bar2) dominate the GaN epilayers grown on the pyramidal PSS, demonstrating poor quality. After etching in the mixed acids, these (10 (1) over bar(3) over bar) GaN films are dotted with oblique pyramids, concurrently lining along the < 30 (3) over bar2 > direction, indicative of a typical N-polarity characteristic. Defect-related optical transitions of the (10 (1) over bar(3) over bar) GaN epilayers are identified and detailedly discussed in virtue of the temperature-dependent PL. In particular, an anomalous blueshift-redshift transition appears with an increase in temperature for the broad blue luminescence due to the thermal activation of the shallow level.

Formal specification and refinement of a safe train control function

Motivated by the design and development challenges of the BART case study, an approach for developing and analyzing a formal model for reactive systems is presented. The approach makes use of a domain specific language for specifying control algorithms able to satisfy competing properties such as safety and optimality. The domain language, called SPC, offers several key abstractions such as the state, the profile, and the constraint to facilitate problem specification. Using a high-level program transformation system such as HATS being developed at the University of Nebraska at Omaha, specifications in this modelling language can be transformed to ML code. The resulting executable specification can be further refined by applying generic transformations to the abstractions provided by the domain language. Problem dependent transformations utilizing the domain specific knowledge and properties may also be applied. The result is a significantly more efficient implementation which can be used for simulation and gaining deeper insight into design decisions and various control policies. The correctness of transformations can be established using a rewrite-rule based induction theorem prover Rewrite Rule Laboratory developed at the University of New Mexico.

Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers

The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.

Deformation mechanism of polystyrene toughened with sub-micrometer monodisperse rubber particles

Core-shell polybutadiene-graft-polystyrene (PB-g-PS) rubber particles with different ratios of polybutadiene to polystyrene were prepared by emulsion polymerization through grafting styrene onto polybutadiene latex. The weight ratio of polybutadiene to polystyrene ranged from 50/50 to 90/10. These core-shell rubber particles were then blended with polystyrene to prepare PS/PB-g-PS blends with a constant rubber content of 20 wt%. PB-g-PS particles with a lower PB/PS ratio (<= 570/30) form a homogeneous dispersion in the polystyrene matrix, and the Izod notched impact strength of these blends is higher than that of commercial high-impact polystyrene (HIPS). It is generally accepted that polystyrene can only be toughened effectively by 1-3 mu m rubber particles through a toughening mechanism of multiple crazings. However, the experimental results show that polystyrene can actually be toughened by monodisperse sub-micrometer rubber particles. Scanning electron micrographs of the fracture surface and stress-whitening zone of blends with a PB/PS ratio of 70/30 in PB-g-PS copolymer reveal a novel toughening mechanism of modified polystyrene, which may be shear yielding of the matrix, promoted by cavitation.

Morphology and thermal and mechanical properties of PBT/HIPS and PBT/HIPS-g-GMA blends

The modification of high-impact polystyrene (HIPS) was accomplished by melt-grafting glycidyl methacrylate (GMA) on its molecular chains. Fourier transform infrared spectroscopy and electron spectroscopy for chemical analysis were used to characterize the formation of HIPS-g-GMA copolymers. The content of GMA in HIPS-g-GMA copolymer was determined by using the titration method. The effect of the concentrations of GMA and dicumyl peroxide on the degree of grafting was studied. A total of 1.9% of GMA can be grafted on HIPS. HIPS-g-GNU was used to prepare binary blends with poly(buthylene terephthalate) (PBT), and the evidence of reactions between the grafting copolymer and PBT in the blends was confirmed by scanning electron microscopy (SEM), dynamic mechanical analysis, and its mechanical properties. The SEM result showed that the domain size in PBT/HIPS-g-GMA blends was reduced significantly compared with that in PBT/HIPS blends; moreover, the improved strength was measured in PBT/HIPS-g-GMA blends and results from good interfacial adhesion. The reaction between ester groups of PBT and epoxy groups of HIPS-g-GMA can depress crystallinity and the crystal perfection of PBT.

Preparation of the HIPS/MA graft copolymer and its compatibilization in PA6/HIPS blends

The graft copolymer of high impact polystyrene (HIPS) grafted with malice anhydride (MA) (HIPS-g-MA) was prepared with melt mixing in the presence of a free-radical initiator. The grafting reaction was confirmed by IR analyses and the amount of MA grafted on HIPS was evaluated by a titration method. 1-5 wt% of MA can be grafted on HIPS. HIPS-g-MA is miscible with HIPS. Its anhydride group can react with the PA6 during melt mixing the two components. The compatibility of HIPS-g-MA in the HIPS/PA6 blends was evident. Evidence of reactions in the blends was confirmed in the morphology and mechanical properties of the blends. A significant reduction in domain size was observed because of the compatibilization of HIPS-g-MA in the blends of HIPS and PA6. The tensile mechanical properties of the prepared blends were investigated and the fracture surfaces of the blends were examined by means of the scanning electron microscope (SEM). The improved adhesion in a 16%HIPS/75%PA6 blend with 9%HIPS-g-MA copolymer was detected. The morphology of fibrillar ligaments formed by PA6 connecting HIPS particles was observed.

Morphology, crystallization behaviors, and mechanical properties of PA1010/HIPS and PA1010/HIPS-g-MA blends

The binary blends of polyamide 1010 (PA1010) with the high-impact polystyrene (HIPS)/maleic anhydride (MA) graft copolymer (HIPS-g-MA) and with HIPS were prepared using a wide composition range. Different blend morphologies were observed by scanning electron microscopy according to the nature and content of PA1010 used. Compared with the PA1010/HIPS binary blends, the domain sizes of dispersed-phase particles in PA1010/HIPS-g-MA blends were much smaller than that in PA1010/HIPS blends at the same compositions. It was found that the tensile properties of PA1010/HIPS-g-MA blends were obviously better than that of PA 1010/HIPS blends. Wide-angle xray diffraction analyses were performed to confirm that the number of hydrogen bonds in the PA1010 phase decreased in the blends of PA1010/HIPS-g-MA. These behaviors could be attributed to the chemical interactions between the two components and good dispersion in PA1010/HIPS-g-MA blends.