Sequence of genome segments 1, 2, and 3 of the grass carp reovirus (Genus Aquareovirus, family Reoviridae)

The genome segments 1, 2, and 3 of the grass carp reovirus (GCRV), a tentative species assigned to genus Aquareouirus, family Reouiridae, were sequenced. The respective segments 1, 2, and 3 were 3949, 3877, and 3702 nucleotides long. Conserved moths 5' (GUUAUUU) and 3' (UUCAUC) were found at the ends of each segment. Each segment contains a single ORF and the negative strand does not permit identification of consistent ORFs. Sequence analysis revealed that VP2 is the viral polymerase, while VPI might represent the viral guanyly/methyl transferase (involved in the capping process of RNA transcripts) and VP3 the NTPase/helicase (involved in the transcription and capping of viral RNAs), The highest amino acid identities (26-41%) were found with orthoreovirus proteins. Further genomic characterization should provide insight about the genetic relationships between GCRV, aquareoviruses, and orthoreoviruses, It should also permit to precise the taxonomic status of these different viruses. (C) 2000 Academic Press.

Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 x 10(11) cm(-2) and high electron mobility of 1346 cm(2) V-1 s(-1) were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Omega/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances. (c) 2006 Elsevier B.V. All rights reserved.

Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation

Selectively photo-excited C-V spectroscopy has been measured in an In0.5Ga0.5As quantum dots (QDs)-embedded, three barrier-two well heterostructure. By comparing with a theoretical capacitance model, the pure capacitive contribution from In0.5Ga0.5As QDs, due to tunnelling coupling between In0.5Ga0.5As QDs and In0.18Ga0.82As quantum well, has been used to obtain the density of charges from photo-excited In0.5Ga0.5As QDs in a very straightforward manner.

Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires

Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.

施肥水平对长武旱塬地冬小麦产量影响的模拟

为了在实时气象条件下确定旱塬区适宜的肥力水平和产量水平,在模拟精度验证基础上,应用WinEPIC模型模拟研究了黄土高原长武旱塬地1957～2001年期间不同肥力水平下连作冬小麦田产量效应。模型验证结果表明CK、N、NP处理产量模拟值与观测值之间的相关系数分别为0.740、0.764和0.740,均达到显著水平,WinEPIC模型对不同肥力处理下冬小麦籽粒产量模拟较为准确。模拟结果表明,无肥、低肥、中肥和高肥处理下连作冬小麦的产量均呈现波动性降低趋势,其平均值分别为1.055、1.422、2.405和3.170t/hm2,不同肥力处理间差异显著,以中肥和高肥处理增产效果最好。为黄土高原南部沟壑区旱地小麦生产的可持续发展提供了科学依据。

基于DDS的波形发生器在加速器电源控制系统中的应用

对兰州重离子加速器的电源控制系统进行了研究,设计了以直接数字频率合成器和数字信号处理器为核心的波形发生器;该波形发生器为电源提供脉冲基准信号,控制电源的电流,并可以从上层数据库下载波形数据,通过网络浏览器或组件修改波形数据,便于加速器调试;实验测试表明该波形发生器达到了设计要求。