A study of the interface of CeO2/Si heterostructure grown by ion beam deposition

Epitaxial cerium dioxide films on single-crystal silicon substrates (CeO2/Si) have been grown by a dual mass-analyzed low-energy ion beam deposition (IBD) system. By double-crystal X-ray diffraction (XRD), Full Width at Half Maximum (FWHM) are 23' and 33' in the rocking curves for (222) and (111) faces of the CeO2 film, respectively, and the lattice-mismatch Delta a/a with the substrate is about - 0.123%. The results show that the CeO2/Si grown by IBD is of high crystalline quality. In this work, the CeO2/Si heterostructure were investigated by X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) measurements. Especially, XPS and AES depth profiling was used to analyze the compositions and structures in the interface regions of the as-grown and post-annealed CeO2/Si. It was found that there was no silicon oxide in the interface region of the as-grown sample but silicon oxide in the post-annealed sample. The reason for obtaining such high quality heterostructure mainly depends on the absence of silicon oxide in the surface at the beginning of the deposition. (C) 1998 Elsevier Science Ltd. All rights reserved.

社区宽带综合业务网服务质量保证的研究

社区宽带综合业务网络系统使用交换式以太网技术，在一个物理网络上为社区用户提供Internet接入、数字电视、IP电话等服务，对三网融合进行了实践性探讨。提出并实现了一套保证系统服务质量的方法，并在测试中取得了满意的效果。

High quality CeO2 film grown on Si(111) substrate by using low energy dual ion beam deposition technology

By using the mass-analyzed low energy dual ion beam deposition technique, a high quality epitaxial, insulating cerium dioxide thin film with a thickness of about 2000 Angstrom, has been grown on a silicon (111) substrate. The component species, cerium and oxygen, are homogeneous in depth, and have the correct stoichiometry for CeO2. X-ray double-crystal diffraction shows that the full width at half maximum of the (222) and (111) peaks of the film are less than 23 and 32 s, respectively, confirming that the film is a perfect single crystal. (C) 1995 American Institute of Physics.

电子束辐照下单壁碳纳米管的结构不稳定性

利用透射电镜（TEM）原位观察了一端固定一端自由和两端固定的单壁碳纳米管（SWNT（s））在电子束辐照下的结构不稳定性。研究发现,一端固定一端自由的SWNT优先轴向和径向收缩后颈缩,最后形成一个个碳笼紧密相连的收缩结构（“碳笼-碳笼”结构）;两端固定的SWNT仅径向收缩后颈缩,最后形成许多碳笼相连的类似结构。此外,后者在电子束辐照下断开后又会重新粘合起来,表现出很强的表面塑性流变或湿润效应。这些电子束辐照诱导SWNTs非热激活结构不稳定性现象可以用我们最近提出的表面纳米曲率效应和能量束超快诱导软模和点阵失稳进行全新、全面、正确的解释。

国家自然科学基金半导体学科2001年项目概况分析

简介并分析最近几年半导体学科基金项目申请和资助的发展趋势以及2001年半导体学科基金申请与资助概况，并附2001年半导体学科批准资助的面上及重点项目，供有关科技工作者参考。

用低能离子束淀积技术在硅（111）衬底上生长氧化铈外延薄膜

采用质量分离的低能双离子束淀积(IBD)技术,在硅(111)衬底上共淀积,生长了氧化铈外延薄膜。椭圆偏振仪测得,膜厚2000A。俄歇能谱仪测得,外延层内铈、氧分布均匀,具有很好的正化学比。X射线双晶衍射得到明显的氧化铈(111),(222)峰,半高宽≤23''。

用VHDL实现的23位快速浮点数加减法器

With the development of LSI, FPGA/CPLD has been used more and more in the fields of digital signal processing and au-tocontrol and so on. And with the development of the techniques of digital processing, for fitting the system’s function, it should be a higher requirement to speed and used-resource to compute the floating point numbers. The author introduces a high speed adder-subtracter of the 23 bit’s floating point numbers, which is carried out with the parallel arithmetic and the computational speed cou...中文文摘：随着大规模集成电路的不断发展,FPGA/CPLD在数字信号处理、自动控制等方面得到了越来越多的应用。并且伴随着数字化处理技术的不断发展,为满足系统功能的要求,对浮点数运算的速度以及相应占用的资源也就提出了更高的要求。笔者即介绍了以VHDL语言为基础,采用并行算法且计算速度达到33MHz的,对23位标准浮点数实现的高速浮点加减法运算器,并以Cyclone II芯片EP2C20F484为硬件环境,最终进行时序模拟仿真,从而验证该浮点加减法器的正确性和快速特性。