Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. © 2012 IOP Publishing Ltd.

Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature. Taper-free and defect-free Ge nanowires grew successfully even at 270 °C, which is 90 °C lower than the bulk eutectic temperature. The yield of vertical and taper-free nanowires is over 90%, comparable to that of vertical but tapered nanowires grown by the conventional one-temperature process. This method is of practical importance and can be reliably used to develop novel nanowire-based devices on relatively cheap Si substrates. Additionally, we observed that the activation energy of Ge nanowire growth by the two-temperature process is dependent on Au nanoparticle size. The low activation energy (∼5 kcal/mol) for 30 and 50 nm diameter Au nanoparticles suggests that the decomposition of gaseous species on the catalytic Au surface is a rate-limiting step. A higher activation energy (∼14 kcal/mol) was determined for 100 nm diameter Au nanoparticles which suggests that larger Au nanoparticles are partially solidified and that growth kinetics become the rate-limiting step. © 2011 American Chemical Society.

High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD

High quality InGaAsP/InGaAsP multiple quantum wells ( MQWs) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. A large bandgap energy shift of 46 nm and photoluminescence with FWHM less than 30 meV were obtained with a rather small mask width variation (15-30 mu m). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks were employed, and the transition effect W the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length.

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

Evaluation of Torque Maintenance of Abutment and Cylinder Screws With Morse Taper Implants

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Comparative Strain Gauge Analysis of External and Internal Hexagon, Morse Taper, and Influence of Straight and Offset Implant Configuration

Purpose: The present study was designed to analyze strain distributions caused by varying the fixture-abutment design and fixture alignment.Materials and Methods: Three implants of external, internal hexagon, and Morse taper were embedded in the center of each polyurethane block in straight placement and offset placement. Four strain gauges (SGs) were bonded on the surface of polyurethane block, which was designated SG1 placed mesially adjacent to implant A, SG2 and SG3 were placed mesially and distally adjacent to the implant B and SG4 was placed distally adjacent to the implant C. The 30 superstructures' occlusal screws were tightened onto the Microunit abutments with a torque of 10 N cm using the manufacturers' manual torque-controlling device.Results: There were statistically significant differences in prosthetic connection (P value = 0.0074 < 0.5). There were no statistically significant differences in placement configuration/alignment (P value = 0.7812 > 0.5).Conclusion: The results showed fundamental differences in both conditions. There was no evidence that there was any advantage to offset implant placement in reducing the strain around implants. The results also revealed that the internal hexagon and Morse taper joints did not reduce the microstrain around implants. (Implant Dent 2011; 20:e24-e32)

Effects of taper on swimming force and swimmer performance after an experimental ten-week training program

Papoti, M., L.E.B. Martins, S.A. Cunha, A.M. Zagatto, and C.A. Gobatto. Effects of taper on swimming force and swimmer performance after an experimental ten-week training program. J. Strength Cond. Res. 21(2):538-542. 2007.- The purpose of this research was to examine how an 11-day taper after an 8.5-week experimental training cycle affected lactate levels during maximal exercise, mean force, and performance in training swimmers, independent of shaving, psychological changes, and postcompetition effects. Fourteen competition swimmers with shaved legs and torsos were recruited from the São Paulo Aquatic Federation. The training cycle consisted of a basic training period (endurance and quality phases) of 8.5 weeks, with 5,800 m·d -1 mean training volume and 6 d·wk -1 frequency; and a taper period (TP) of 1.5 weeks' duration that incorporated a 48% reduction in weekly volume without altering intensity. Attained swimming force (SF) and maximal performance over 200m maximal swim (Pmax) before and after taper were measured. After taper, SF and Pmax improved 3.6 and 1.6%, respectively (p < 0.05). There were positive correlations (p < 0.05) between SF and Pmax before (r = 0.86) and after (r = 0.83) the taper phase. Peak lactate concentrations after SF were unaltered before (6.79 ± 1.2 mM) and after (7.15 ± 1.8 mM) TP. Results showed that TP improved mean swimming velocity, but not in the same proportion as force after taper, suggesting that there are other factors influencing performance in faster swimming. © 2007 National Strength & Conditioning Association.

Avaliação da resistência à fadiga de instrumentos rotatórios do Sistema Pro Taper Universal por meio de ensaio dinâmico

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Avaliação das características geométricas, dimensionais, de flexibilidade e resistência torcional dos instrumentos de NiTi do Sistema Pro Taper Universal para retratamento

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Influence of the gutta-percha taper and finger spreader on lateral consensation effectiveness

Introduction: Lateral condensation effectiveness may be influenced by the gutta-percha and finger spreader taper used during root canal obturation. Objective: To evaluate the penetration ability of finger spreader into simulated root canals prepared using MTwo rotary system and filled with different gutta-percha and finger spreader tapers. Material and methods: Resin blocks with curved root canals had the apical diameter enlarged up to #25.06 and distributed into groups (n = 6) according to the gutta-percha taper (#25.02, #25.04, and #25.06) and the finger spreader (#30 and #35 NiTi, and stainless steel B) used to perform cold lateral condensation. After applying a load of 1.5 Kg over the finger spreaders’ head, the distance between the finger spread tip and the apical limit of the root canal preparation were obtained. The data were submitted to Anova and Tukey-Krammer’s test, with 5% of significance. Results: The gutta-percha cones with 0.02 taper enabled higher finger spreader penetration when compared to 0.04 and 0.06 tapers (p < 0.05), which were similar between each other (p > 0.05), regardless of the type and diameter of the finger spreader used. When different finger spreaders were compared among themselves, stainless steel B showed higher penetration ability (p < 0.05). Conclusion: It was concluded that the stainless-steel finger spreaders showed superior penetration ability and gutta-percha with lower tapers enabled a more effective lateral condensation at the apical third.