Highly stabilized alpha-NiCo(OH)(2) nanomaterials for high performance device application

Improving the charge capacity, electrochemical reversibility and stability of anode materials are main challenges for the development of Ni-based rechargeable batteries and devices. The combination of cobalt, as additive, and electrode material nanostructuration revealed a very promising approach for this purpose. The new alpha-NiCo mixed hydroxide based electrodes exhibited high specific charge/discharge capacity (355-714 C g(-1)) and outstanding structural stability, withstanding up to 700 redox cycles without any significant phase transformation, as confirmed by cyclic voltammetry, electrochemical quartz crystal microbalance and X-ray diffractometry. In short, the nanostructured alpha-NiCo mixed hydroxide materials possess superior electrochemical properties and stability, being strong candidates for application in high performance batteries and devices. (C) 2012 Elsevier B.V. All rights reserved.

Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication /

"Issued May 1980."

CONSTRUÇÃO DE UM DISPOSITIVO DE PRESSURIZAÇÃO A VÁCUO PARA A PREPARAÇÃO DE FASES ESTACIONÁRIAS MONOLÍTICAS VIA PROCESSO SOL-GEL

The filling of capillaries via the sol-gel process is growing. Therefore, this technical note focuses on disseminating knowledge acquired in the Group of Analytical Chemistry and Chemometrics over seven years working with monolithic stationary phase preparation in fused silica capillaries. We believe that the detailed information presented in this technical note concerning the construction of an alternative high pressurization device, used to fill capillary columns via the sol-gel process, which has promising potential for applications involving capillary electrochromatography and liquid chromatography in nano scale, may be enlightening and motivating for groups interested in developing research activities within this theme.

High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis depict the first experimental work for which this reactor was used at the University of Kassel. Most research in the field of self-organized quantum dots has been conducted in the InAs/GaAs material system. It can be seen as the model system of self-organized quantum dots, but is not suitable for the targeted emission wavelength. Light emission from this system at 1.55 µm is hard to accomplish. To stay as close as possible to existing processing technology, the In(AlGa)As/InP (100) material system is deployed. Depending on the epitaxial growth technique and growth parameters this system has the drawback of producing a wide range of nano species besides quantum dots. Best known are the elongated quantum dashes (QDash). Such structures are preferentially formed, if InAs is deposited on InP. This is related to the low lattice-mismatch of 3.2 %, which is less than half of the value in the InAs/GaAs system. The task of creating round-shaped and uniform QDs is rendered more complex considering exchange effects of arsenic and phosphorus as well as anisotropic effects on the surface that do not need to be dealt with in the InAs/GaAs case. While QDash structures haven been studied fundamentally as well as in laser structures, they do not represent the theoretical ideal case of a zero-dimensional material. Creating round-shaped quantum dots on the InP(100) substrate remains a challenging task. Details of the self-organization process are still unknown and the formation of the QDs is not fully understood yet. In the course of the experimental work a novel growth concept was discovered and analyzed that eases the fabrication of QDs. It is based on different crystal growth and ad-atom diffusion processes under supply of different modifications of the arsenic atmosphere in the MBE reactor. The reactor is equipped with special valved cracking effusion cells for arsenic and phosphorus. It represents an all-solid source configuration that does not rely on toxic gas supply. The cracking effusion cell are able to create different species of arsenic and phosphorus. This constitutes the basis of the growth concept. With this method round-shaped QD ensembles with superior optical properties and record-low photoluminescence linewidth were achieved. By systematically varying the growth parameters and working out a detailed analysis of the experimental data a range of parameter values, for which the formation of QDs is favored, was found. A qualitative explanation of the formation characteristics based on the surface migration of In ad-atoms is developed. Such tailored QDs are finally implemented as active region in a self-designed diode laser structure. A basic characterization of the static and temperature-dependent properties was carried out. The QD lasers exceed a reference quantum well laser in terms of inversion conditions and temperature-dependent characteristics. Pulsed output powers of several hundred milli watt were measured at room temperature. In particular, the lasers feature a high modal gain that even allowed cw-emission at room temperature of a processed ridge wave guide device as short as 340 µm with output powers of 17 mW. Modulation experiments performed at the Israel Institute of Technology (Technion) showed a complex behavior of the QDs in the laser cavity. Despite the fact that the laser structure is not fully optimized for a high-speed device, data transmission capabilities of 15 Gb/s combined with low noise were achieved. To the best of the author`s knowledge, this renders the lasers the fastest QD devices operating at 1.55 µm. The thesis starts with an introductory chapter that pronounces the advantages of optical fiber communication in general. Chapter 2 will introduce the fundamental knowledge that is necessary to understand the importance of the active region`s dimensions for the performance of a diode laser. The novel growth concept and its experimental analysis are presented in chapter 3. Chapter 4 finally contains the work on diode lasers.

Optimization of photo-polymerized sol gel monolithic stationary phases prepared in polyacrylate-coated fused-silica capillaries for capillary electrochromatography

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Atrial fibrillation following device closure of patent foramen ovale

OBJECTIVES: Recurrent embolic events after device closure of patent foramen ovale (PFO) have been related to incomplete closure. Another cause could be atrial fibrillation (AF). The aim of this study was to determine the incidence of AF in stroke patients after PFO closure. METHODS: Consecutive patients with device closure of a PFO after a stroke or transient ischemic attack and control patients with stroke underwent 7-day event loop recordings 3 and 6 months after PFO closure or stroke, respectively. RESULTS: Forty patients treated by PFO device closure 96 +/- 68 days after cryptogenic ischemic stroke and 70 control patients with ischemic stroke of other etiologies (known AF excluded) were compared. AF was identified in 6 patients (15%) of the treated group and in 12 control patients (17%, p = 0.77). In multivariate analysis, the presence of an occluder device was not an independent risk factor for AF. CONCLUSIONS: The incidence of AF is high after device closure of a PFO in stroke patients and similar to that in patients with stroke of non-PFO etiology and, hence, with no device. Further studies are required to determine the risk of thromboembolism and the optimal treatment in patients developing AF after device closure of a PFO.

Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications

Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.

On-line system for faults detection in induction motors based on PCA

Dissertation to obtain the degree of Master in Electrical and Computer Engineering

Low-cost automatic activity data recording system

We describe a low-cost, high quality device capable of monitoring indirect activity by detecting touch-release events on a conducting surface, i.e., the animal's cage cover. In addition to the detecting sensor itself, the system includes an IBM PC interface for prompt data storage. The hardware/software design, while serving for other purposes, is used to record the circadian activity rhythm pattern of rats with time in an automated computerized fashion using minimal cost computer equipment (IBM PC XT). Once the sensor detects a touch-release action of the rat in the upper portion of the cage, the interface sends a command to the PC which records the time (hours-minutes-seconds) when the activity occurred. As a result, the computer builds up several files (one per detector/sensor) containing a time list of all recorded events. Data can be visualized in terms of actograms, indicating the number of detections per hour, and analyzed by mathematical tools such as Fast Fourier Transform (FFT) or cosinor. In order to demonstrate method validation, an experiment was conducted on 8 Wistar rats under 12/12-h light/dark cycle conditions (lights on at 7:00 a.m.). Results show a biological validation of the method since it detected the presence of circadian activity rhythm patterns in the behavior of the rats

In vitro enterococcus faecalis biofilm formation on five adhesive systems

Objective: To determine the E. faecalis biofilm formation on the surface of five adhesive systems (AS) and its relationship with roughness. Study Design: The formation of E. faecalis biofilms was tested on the surface of four dual-cure AS: AdheSE DC, Clearfil DC Bond, Futurabond DC and Excite DSC and one light-cure antimicrobial AS, Clearfil Protect Bond, after 24 hours of incubation, using the MBEC high-throughput device. Results: E. faecalis biofilms grew on all the adhesives. The least growth of biofilm was on Excite DSC, Clearfil Protect Bond, and the control. Futurabond DC resulted in the greatest roughness and biofilm amount. There was a close relationship between the quantity of biofilm and roughness, except for Clearfil Protect Bond, which showed little biofilm but high roughness. Conclusion: None of the tested AS prevented E. faecalis biofilm formation, although the least quantity was found on the surface of Clearfil Protect Bond.

Contribución a los modelos de gestión de las redes móviles ad hoc

La capacidad de comunicación de los seres humanos ha crecido gracias a la evolución de dispositivos móviles cada vez más pequeños, manejables, potentes, de mayor autonomía y más asequibles. Esta tendencia muestra que en un futuro próximo cercano cada persona llevaría consigo por lo menos un dispositivo de altas prestaciones. Estos dispositivos tienen incorporados algunas formas de comunicación: red de telefonía, redes inalámbricas, bluetooth, entre otras. Lo que les permite también ser empleados para la configuración de redes móviles Ad Hoc. Las redes móviles Ad Hoc, son redes temporales y autoconfigurables, no necesitan un punto de acceso para que los nodos intercambien información entre sí. Cada nodo realiza las tareas de encaminador cuando sea requerido. Los nodos se pueden mover, cambiando de ubicación a discreción. La autonomía de estos dispositivos depende de las estrategias de como sus recursos son utilizados. De tal forma que los protocolos, algoritmos o modelos deben ser diseñados de forma eficiente para no impactar el rendimiento del dispositivo, siempre buscando un equilibrio entre sobrecarga y usabilidad. Es importante definir una gestión adecuada de estas redes especialmente cuando estén siendo utilizados en escenarios críticos como los de emergencias, desastres naturales, conflictos bélicos. La presente tesis doctoral muestra una solución eficiente para la gestión de redes móviles Ad Hoc. La solución contempla dos componentes principales: la definición de un modelo de gestión para redes móviles de alta disponibilidad y la creación de un protocolo de enrutamiento jerárquico asociado al modelo. El modelo de gestión propuesto, denominado High Availability Management Ad Hoc Network (HAMAN), es definido en una estructura de cuatro niveles, acceso, distribución, inteligencia e infraestructura. Además se describen los componentes de cada nivel: tipos de nodos, protocolos y funcionamiento. Se estudian también las interfaces de comunicación entre cada componente y la relación de estas con los niveles definidos. Como parte del modelo se diseña el protocolo de enrutamiento Ad Hoc, denominado Backup Cluster Head Protocol (BCHP), que utiliza como estrategia de encaminamiento el empleo de cluster y jerarquías. Cada cluster tiene un Jefe de Cluster que concentra la información de enrutamiento y de gestión y la envía al destino cuando esta fuera de su área de cobertura. Para mejorar la disponibilidad de la red el protocolo utiliza un Jefe de Cluster de Respaldo el que asume las funciones del nodo principal del cluster cuando este tiene un problema. El modelo HAMAN es validado a través de un proceso la simulación del protocolo BCHP. El protocolo BCHP se implementa en la herramienta Network Simulator 2 (NS2) para ser simulado, comparado y contrastado con el protocolo de enrutamiento jerárquico Cluster Based Routing Protocol (CBRP) y con el protocolo de enrutamiento Ad Hoc reactivo denominado Ad Hoc On Demand Distance Vector Routing (AODV). Abstract The communication skills of humans has grown thanks to the evolution of mobile devices become smaller, manageable, powerful, more autonomy and more affordable. This trend shows that in the near future each person will carry at least one high-performance device. These high-performance devices have some forms of communication incorporated: telephony network, wireless networks, bluetooth, among others. What can also be used for configuring mobile Ad Hoc networks. Ad Hoc mobile networks, are temporary and self-configuring networks, do not need an access point for exchange information between their nodes. Each node performs the router tasks as required. The nodes can move, change location at will. The autonomy of these devices depends on the strategies of how its resources are used. So that the protocols, algorithms or models should be designed to efficiently without impacting device performance seeking a balance between overhead and usability. It is important to define appropriate management of these networks, especially when being used in critical scenarios such as emergencies, natural disasters, wars. The present research shows an efficient solution for managing mobile ad hoc networks. The solution comprises two main components: the definition of a management model for highly available mobile networks and the creation of a hierarchical routing protocol associated with the model. The proposed management model, called High Availability Management Ad Hoc Network (HAMAN) is defined in a four-level structure: access, distribution, intelligence and infrastructure. The components of each level: types of nodes, protocols, structure of a node are shown and detailed. It also explores the communication interfaces between each component and the relationship of these with the levels defined. The Ad Hoc routing protocol proposed, called Backup Cluster Head Protocol( BCHP), use of cluster and hierarchies like strategies. Each cluster has a cluster head which concentrates the routing information and management and sent to the destination when out of cluster coverage area. To improve the availability of the network protocol uses a Backup Cluster Head who assumes the functions of the node of the cluster when it has a problem. The HAMAN model is validated accross the simulation of their BCHP routing protocol. BCHP protocol has been implemented in the simulation tool Network Simulator 2 (NS2) to be simulated, compared and contrasted with a hierarchical routing protocol Cluster Based Routing Protocol (CBRP) and a routing protocol called Reactive Ad Hoc On Demand Distance Vector Routing (AODV).

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

ASIC microcontroller design of a radiation monitoring system using VHDL modeling and FPGA implementation

Three new technologies have been brought together to develop a miniaturized radiation monitoring system. The research involved (1) Investigation a new HgI$\sb2$ detector. (2) VHDL modeling. (3) FPGA implementation. (4) In-circuit Verification. The packages used included an EG&G's crystal(HgI$\sb2$) manufactured at zero gravity, the Viewlogic's VHDL and Synthesis, Xilinx's technology library, its FPGA implementation tool, and a high density device (XC4003A). The results show: (1) Reduced cycle-time between Design and Hardware implementation; (2) Unlimited Re-design and implementation using the static RAM technology; (3) Customer based design, verification, and system construction; (4) Well suited for intelligent systems. These advantages excelled conventional chip design technologies and methods in easiness, short cycle time, and price in medium sized VLSI applications. It is also expected that the density of these devices will improve radically in the near future. ^

Amplificador de RF Doherty assimétrico de 2-vias

Os atuais esquemas de modulação e acesso ao meio, tais como o Wide- Band Code-Division Multiple Access (WCDMA) ou Orthogonal Frequency- Division Multiple Access (OFDMA), que são otimizados para a gestão eficiente do espetro electromagnético e elevada taxa de transmissão, originam sinais de elevado Peak-to-Average Power Ratio (PAPR) e requisitos de linearidade rigorosos. As arquiteturas de amplificação tradicionais, i.e. baseadas no operação em modo de corrente do dispositivo ativo, são incapazes de satisfazer estes requisitos em simultâneo. Assim, o amplificador de potência (do inglês, Power Ampli_er (PA)) incorre numa degradação significativa de rendimento energético em favor de maior linearidade, aumentando simultaneamente os custos de operação das estacões base para os operadores de telecomunicações móveis e o impacte ambiental. Este trabalho foca-se no estudo da arquitetura Doherty, a principal solução encontrada para melhorar o compromisso linearidade/rendimento para aplicações em estações-base de comunicações móveis. Para tal, são expostos os princípios básicos de amplificadores de rádio frequência assim como a análise teórica do tradicional PA Doherty (do inglês, Doherty Power Amplifier (DhPA)) de duas vias e suas variantes. O estudo _e complementado com o projeto e implementação de um PA excitador, em classe-AB, e de um DhPA de elevada potência, colocando-se em prática a teoria e técnicas de projeto estudadas ao longo deste trabalho, aliadas aos desafios da implementação com dispositivos reais de elevada potência.