890 resultados para gain bandwidth
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With existing techniques for mode-locking, the bandwidth of ultrashort pulses from a laser is determined primarily by the spectrum of the gain medium. Lasers with self-similar evolution of the pulse in the gain medium can tolerate strong spectral breathing, which is stabilized by nonlinear attraction to the parabolic self-similar pulse. Here we show that this property can be exploited in a fiber laser to eliminate the gain-bandwidth limitation to the pulse duration. Broad (∼200 nm) spectra are generated through passive nonlinear propagation in a normal-dispersion laser, and these can be dechirped to ∼20-fs duration. © 2012 Optical Society of America.
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We show that self-similar evolution in a fiber laser can stabilize spectra broader than the gain bandwidth. 21-fs pulses, which are the shortest from a fiber laser to date, and 200-nm spectra are generated. © OSA 2012.
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We show experimentally a 57nm gain bandwidth for an ultra-long Raman fiber laser based amplification technique using only a single pump wavelength. The enhanced gain bandwidth and gain flatness is investigated for single and multi-cavity designs. ©2010 IEEE.
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The first demonstration of a hollow core photonic bandgap fiber (HC-PBGF) suitable for high-rate data transmission in the 2 μm waveband is presented. The fiber has a record low loss for this wavelength region (4.5 dB/km at 1980 nm) and a >150 nm wide surface-mode-free transmission window at the center of the bandgap. Detailed analysis of the optical modes and their propagation along the fiber, carried out using a time-of-flight technique in conjunction with spatially and spectrally resolved (S) imaging, provides clear evidence that the HC-PBGF can be operated as quasi-single mode even though it supports up to four mode groups. Through the use of a custom built Thulium doped fiber amplifier with gain bandwidth closely matched to the fiber's low loss window, error-free 8 Gbit/s transmission in an optically amplified data channel at 2008 nm over 290 m of 19 cell HC-PBGF is reported. © 2013 Optical Society of America.
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Energian kulutuksen vähentäminen ja sen tutkiminen on kasvavan kiinnostuksen kohteena. Syntyneen lämmön mittaaminen on yksi tapa mitata energian siirtymistä. Lämpötilan mittaaminen on yleistä, vaikka usein on merkittävämpää selvittää missä ja miten lämpöenergia on siirtynyt. Tästä syystä tarvitaan lämpövuoantureita, jotka reagoivat suoraan lämpövuohon eli lämpöenergian siirtymiseen. Tässä tutkimuksessa suunnitellaan ja toteutetaan lämpövuoanturin mittauselektroniikka vaativaan käyttöympäristöön. Työssä käytettävän gradienttilämpövuoanturin tuottama jännitesignaali on mikrovolttiluokkaa ja ympäristön aiheuttama kohina voi olla huomattavasti suurempi. Tämän takia anturin tuottamaa signaalia on vahvistettava, jotta sitä voidaan mitata luotettavasti. Tutkimuksessa keskitytään vahvistimen suunnitteluun, mutta suunnittelussa on otettava huomioon koko järjestelmä. Anturin sähköiset ominaisuudet ja ympäristö asettavat rajoitteita vahvistimelle. Tavoitteena on selvittää miten voidaan mitata mikrovolttien jännitesignaalia mahdollisimman suurella taajuuskaistalla vaativassa käyttöympäristössä. Työn tuloksena syntyi mittalaite, jota voidaan käyttää vaativassa ympäristössä lämpövuon mittaamiseen. Suunnitteluparametrien mukainen vahvistus ja päästökaista sekä offset-jännitteen ryömintä saavutettiin suunnitellulla mittalaitteella, mutta offsetjännite ja kohina olivat hieman suunniteltua suuremmat. Mittalaitteella ja lämpövuoanturilla havaittiin selvästi lämpövuon muutoksia keinotekoisilla herätteillä.
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The practical applications of microstrip antennas for mobile systems are in portable or pocket-size equipment and in vehicles. Antennas for VHFIUHF handheld portable equipment, such as pagers, portable telephones and transceivers, must naturally be small in size, light in weight and compact in structure. There is a growing tendency for portable equipment to be made smaller and smaller as the demand for personal communication rapidly increases, and the development of very compact hand-held units has become urgent.In this thesis work, main aim is to develop a more and more reduced sized microstrip patch antenna. It is well known that the smaller the antenna size, the lower the antenna efficiency. During the period of work, three different compact circular sided microstrip patches are developed and analysed, which have a significant size reduction compared to standard circular disk antenna (the most compact one of the basic microstrip patch configurations), without much deterioration of its properties like gain, bandwidth and efficiency. In addition to this the interesting results, dual port operation and circular polarization are also observed for some typical designs of these patches. These make the patches suitable for satellite and mobile communication systems.The theoretical investigations are carried out on these compact patches. The empirical relations are developed by modifying the standard equations of rectangular and circular disk microstrip patches, which helps to predict the resonant frequencies easily.
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The project consists of an experimental and numerical modelling study of the applications of ultra-long Raman fibre laser (URFL) based amplification techniques for high-speed multi-wavelength optical communications systems. The research is focused in telecommunications C-band 40 Gb/s transmission data rates with direct and coherent detection. The optical transmission performance of URFL based systems in terms of optical noise, gain bandwidth and gain flatness for different system configurations is evaluated. Systems with different overall span lengths, transmission fibre types and data modulation formats are investigated. Performance is compared with conventional Erbium doped fibre amplifier based system to evaluate system configurations where URFL based amplification provide performance or commercial advantages.
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A compact all-room-temperature CW 73-nm tunable laser source in the visible spectral region (574nm-647nm) has been demonstrated by frequency-doubling of a broadly-tunable InAs/GaAs quantum dot external-cavity diode laser in periodically-poled potassium titanyl phosphate waveguides with a maximum output power in excess of 12mW and a maximum conversion efficiency exceeding 10%. Three waveguides with different cross-sectional areas (4×4μm2, 3×5μm2 and 2x6μm2) were investigated. Introduction - Development of compact broadly tunable laser sources in the visible spectral region is currently very attractive area of research with applications ranging from photomedicine and biophotonics to confocal fluorescence microscopy and laser projection displays. In this respect, semiconductor lasers with their small size, high efficiency, reliability and low cost are very promising for realization of such sources by frequencydoubling of the infrared light in nonlinear crystal waveguides. Furthermore, the wide tunability offered by quantum-dot (QD) external-cavity diode lasers (ECDL), due to the temperature insensibility and broad gain bandwidth [1,2], is very promising for the development of tunable visible laser sources [3,4]. In this work we show a compact green-to-red tunable allroom-temperature CW laser source using a frequency-doubled InAs/GaAs QD-ECDL in periodically-poled potassium titanyl phosphate (PPKTP) crystal waveguides. This laser source generates frequency-doubled light over the 574nm-647nm wavelength range utilizing the significant difference in the effective refractive indices of high-order and low-order modes in multimode waveguides [3]. Experimental results - Experimental setup used in this work was similar to that described in [3] and consisted of a QD gain chip in the quasiLittrow configuration and a PPKTP waveguide. Coarse wavelength tuning of the QD-ECDL between 1140 nm and 1300 nm at 20°C was possible for pump current of 1.5 A. The laser output was coupled into the PPKTP waveguide using an AR-coated 40x aspheric lens (NA ~ 0.55). The PPKTP frequency-doubling crystal (not AR coated) used in our work was 18 mm in length and was periodically poled for SHG (with the poling period of ~ 11.574 11m). The crystal contained 3 different waveguides with cross-sectional areas of ~ 4x4 11m2, 3x5 11m2 and 2x6 11m2. Both the pump laser and the PPKTP crystal were operating at room temperature. The waveguides with cross-sectional areas of 4x411m2, 3x511m2 and 2x611m2 demonstrated the tunability in the wavelength ranges of 577nm - 647nm, 576nm -643nm and 574nm - 641nm, respectively, with a maximum output power of 12.04mW at 606 nm Conclusion - We demonstrated a compact all-room-temperature broadlytunable laser source operating in the visible spectral region between 574nm and 647nm. This laser source is based on second harmonic generation in PPKTP waveguides with different cross-sectional areas using an InAs/GaAs QD-ECDL References [I] E.U. Rafailov, M.A. Cataluna, and W. Sibbett, Nat. Phot. 1,395 (2007). [2] K.A. Fedorova, M.A. Cataluna, I. Krestnikov, D. Livshits, and E.U. Rafailov, Opt. Express 18(18), 19438-19443 (2010). [3] K.A. Fedorova, G.S. Sokolovskii, P.R. Battle, D.A. Livshits, and E.U. Rafailov, Laser Phys. Lett. 9, 790-795 (2012). [4] K.A. Fedorova,G.S. Sokolovskii, D.T. Nikitichev, P.R. Battle, I.L. Krestnikov, D.A. Livshits, and E.U. Rafailov, Opt. Lett. 38(15), 2835-2837 (2013) © 2014 IEEE.
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Tunable Raman fiber lasers have attracted great interest owing to their high efficiency and reliability important for applications, such as optical fiber communications and sensing, spectroscopy, and instrument testing. Their tuning range is defined by the Raman gain bandwidth amounting to about 40 nm in telecom spectral range (∼1550 nm) for conventional silica single mode fibers (SMF). To increase the range, highly nonlinear fibers which broaden pump spectrum may be incorporated in the cavity of Raman fiber lasers, see e.g. [1]. Another approach is to involve Rayleigh scattering forming random distributed feedback in a relatively long fiber resulting in prominent flattening of the tuning curve [2]. In this paper we report on combination of these two techniques in tunable Raman fiber lasers thus providing great improvement of their output characteristics. © 2013 IEEE.
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We demonstrate an ultrabroadband mode-locked spectrum beyond the gain bandwidth from a fiber laser based on self-similar amplification. 21-fs pulses (the shortest from a fiber laser) are generated after phase correction. © 2012 OSA.
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The primary purpose of this thesis was to present a theoretical large-signal analysis to study the power gain and efficiency of a microwave power amplifier for LS-band communications using software simulation. Power gain, efficiency, reliability, and stability are important characteristics in the power amplifier design process. These characteristics affect advance wireless systems, which require low-cost device amplification without sacrificing system performance. Large-signal modeling and input and output matching components are used for this thesis. Motorola's Electro Thermal LDMOS model is a new transistor model that includes self-heating affects and is capable of small-large signal simulations. It allows for most of the design considerations to be on stability, power gain, bandwidth, and DC requirements. The matching technique allows for the gain to be maximized at a specific target frequency. Calculations and simulations for the microwave power amplifier design were performed using Matlab and Microwave Office respectively. Microwave Office is the simulation software used in this thesis. The study demonstrated that Motorola's Electro Thermal LDMOS transistor in microwave power amplifier design process is a viable solution for common-source amplifier applications in high power base stations. The MET-LDMOS met the stability requirements for the specified frequency range without a stability-improvement model. The power gain of the amplifier circuit was improved through proper microwave matching design using input/output-matching techniques. The gain and efficiency of the amplifier improve approximately 4dB and 7.27% respectively. The gain value is roughly .89 dB higher than the maximum gain specified by the MRF21010 data sheet specifications. This work can lead to efficient modeling and development of high power LDMOS transistor implementations in commercial and industry applications.
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Le développement au cours des dernières décennies de lasers à fibre à verrouillage de modes permet aujourd’hui d’avoir accès à des sources fiables d’impulsions femtosecondes qui sont utilisées autant dans les laboratoires de recherche que pour des applications commerciales. Grâce à leur large bande passante ainsi qu’à leur excellente dissipation de chaleur, les fibres dopées avec des ions de terres rares ont permis l’amplification et la génération d’impulsions brèves de haute énergie avec une forte cadence. Cependant, les effets non linéaires causés par la faible taille du faisceau dans la fibre ainsi que la saturation de l’inversion de population du milieu compliquent l’utilisation d’amplificateurs fibrés pour l’obtention d’impulsions brèves dont l’énergie dépasse le millijoule. Diverses stratégies comme l’étirement des impulsions à des durées de l’ordre de la nanoseconde, l’utilisation de fibres à cristaux photoniques ayant un coeur plus large et l’amplification en parallèle ont permis de contourner ces limitations pour obtenir des impulsions de quelques millijoules ayant une durée inférieure à la picoseconde. Ce mémoire de maîtrise présente une nouvelle approche pour l’amplification d’impulsions brèves utilisant la diffusion Raman des verres de silice comme milieu de gain. Il est connu que cet effet non linéaire permet l’amplification avec une large bande passante et ce dernier est d’ailleurs couramment utilisé aujourd’hui dans les réseaux de télécommunications par fibre optique. Puisque l’adaptation des schémas d’amplification Raman existants aux impulsions brèves de haute énergie n’est pas directe, on propose plutôt un schéma consistant à transférer l’énergie d’une impulsion pompe quasi monochromatique à une impulsion signal brève étirée avec une dérive en fréquence. Afin d’évaluer le potentiel du gain Raman pour l’amplification d’impulsions brèves, ce mémoire présente un modèle analytique permettant de prédire les caractéristiques de l’impulsion amplifiée selon celles de la pompe et le milieu dans lequel elles se propagent. On trouve alors que la bande passante élevée du gain Raman des verres de silice ainsi que sa saturation inhomogène permettent l’amplification d’impulsions signal à une énergie comparable à celle de la pompe tout en conservant une largeur spectrale élevée supportant la compression à des durées très brèves. Quelques variantes du schéma d’amplification sont proposées, et leur potentiel est évalué par l’utilisation du modèle analytique ou de simulations numériques. On prédit analytiquement et numériquement l’amplification Raman d’impulsions à des énergies de quelques millijoules, dont la durée est inférieure à 150 fs et dont la puissance crête avoisine 20 GW.
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Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de Computadores
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A new method for enhancing the 2.1 VSWR impedance bandwidth of microstrip antennas is presented. Bandwidth enhancement is achieved by loading the microstrip antenna by a ceramic microwave dielectric resonator (DR). The validity of this technique has been established using rectangular and circular radiating geometries. This method improves the bandwidth of a rectangular microstrip antenna to more than 10% (= 5 times that of a conventional rectangular microstrip antenna) with an enhanced gain of I dB
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A novel technique fitr the bat dividth enhancement of conventional rectangular microstrip antenna is proposed in this paper. When a high permittivity dielectric resonator of suitable resonant frequency was loaded over the patch. the % bandwidth of the antenna was increased by more than five tunes without much affecting its gain and radiation performance. A much more improved bandwidth was obtained when the dielectric resonator was placed on the feedline. Experimental study shows a 2:1 VSWR bandwidth of more than 10% and excellent cross polarization performance with increased pass band and radiation coverage abnost the same as that of rectangular microstrip antenna