972 resultados para Thermal lensing effect


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Time-resolved light-current curves, spectra, and far-field distributions of ridge structure InGaN multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. Results show that the thermal lensing effect clearly improves the confinement of the higher order modes. The thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. The threshold current for the higher modes decreases by about 5 mA in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase. (c) 2006 American Institute of Physics.

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Measurement of thermal lensing signal as a function of laser power made in Rhodamine B solutions in methanol give clear evidence of two photon absorption process within certain concentration ranges when 488 nm Ar+ laser beam is used as the pump source. Only one photon process is found to occur when 514 nm and 476 nm beams are used as the pump.

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The lensing effects in diode end-pumped Yb:YAG laser rods and discs are studied. Two mechanisms of refractive-index changes are taken into account, thermal and electronic (due to the difference between the excited- and ground-state Yb polarisabilities), as well as pump-induced deformation of the laser crystal. Under pulsed pumping, the electronic lensing effect prevails over the thermal one in both rods and discs. In rods pumped by a highly focused cw beam, the dioptric power of the electronic lens exceeds that of the thermal lens, whereas in discs steady-state lensing is predominantly due to the thermal mechanism. © 2009 Kvantovaya Elektronika and Turpion Ltd.

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The induced lenses in the Yb:YAG rods and disks end-pumped by a Gaussian beam were analyzed both analytically and numerically. The thermally assisted mechanisms of the lens formation were considered to include: the conventional volume thermal index changes ("dn/dT"), the bulging of end faces, the photoelastic effect, and the bending (for a disk). The heat conduction equations (with an axial heat flux for a disk and a radial heat flux for a rod), and quasi-static thermoelastic equations (in the plane-stress approximation with free boundary conditions) were solved to find the thermal lens power. The population rate equation with saturation (by amplified spontaneous emission or an external wave) was examined to find the electronic lens power in the active elements.

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Nanostructured polymer-fullerene thin films are among the most prominent materials for application in high efficient polymer solar cells. Specifically, poly(3-hexylthiophene) (P3HT) and fullerene derivatives (PCBM) blends are used as the donor/acceptor materials forming a bulk heterojunction. Although P3HT:PCBM properties have been extensively studied, less light has been set on its nanomechanical properties, which affect the device service life. In this work Atomic Force Acoustic Microscopy (AFAM), Atomic Force Spectroscopy and Nanoindentation were used to study the effect of the fullerene presence and the annealing on the P3HT:PCBM nanomechanical behavior. The P3HT:PCBM thin films were prepared by spin coating on glass substrates and then annealed at 100 °C and 145 °C for 30 min. Large phase separation was identified by optical and Atomic Force Microscopy (AFM) for the annealed samples. Needle-like PCBM crystals were formed and an increase of the polymer crystallinity degree with the increase of the annealing temperature was confirmed by X-ray diffraction. AFAM characterization revealed the presence of aggregates close to stiff PCBM crystals, possibly consisting of amorphous P3HT material. AFM force-distance curves showed a continuous change in stiffness in the vicinity of the PCBM crystals, due to the PCBM depletion near its crystals, and the AFM indentation provided qualitative results about the changes in P3HT nanomechanical response after annealing. © 2011 Elsevier B.V. All rights reserved.

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The effect of rapid thermal annealing on the InAs quantum dots (QDs) grown by atomic layer molecular beam epitaxy and capped with InGaAs layer has been investigated using transmission electron microscopy and photoluminescence (PL). Different from the previously reported results, no obvious blueshift of the PL emission of QDs is observed until the annealing temperature increases up to 800 degreesC. The size and shape of the QDs annealed at 750 degreesC have hardly changed indicating the relatively weak Ga/In interdiffusion, which is characterized by little blueshift of the PL peak of QDs. The QD size increases largely and a few large clusters can be observed after 800 degreesC RTA, implying the fast interdiffusion and the formation of InGaAs QDs. These results indicate that the delay of the blueshift of the PL peak of QDs is correlated with the abnormal interdiffusion process, which can be explained by two possible reasons: the reduction of excess-As-induced defects and the redistribution of In, Ga atoms around the InAs QDs resulted from the sub-monolayer deposition of InGaAs capping layer. (C) 2004 Elsevier B.V. All rights reserved.

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This paper describes the effect of electron irradiation and thermal annealing on LPE AlGaAs/GaAs heterojunction solar cells with various p/n junction depths. The electron irradiation experiments were performed with energy of 3 MeV, fluences ranging from 1 x 10(14) to 5 x 10(15) e/cm(2). The results obtained demonstrate that the irradiation-induced degradation of performances of the cells is mainly in the short circuit current and could be mostly recovered by annealing at 260 degrees C for 30 min. Four electron traps, E-c - 0.24 eV, E-c - 0.41 eV, E-c - 0.51 eV, E-c - 0.59 eV, were found by DLTS analysis, only two shallow levels of which could be removed by the annealing. (C) 1998 Elsevier Science B.V. All rights reserved.

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We address the problem of the rectifying effect of heat conduction at macroscopic size. A design for a macroscopic thermal rectifier based on the macroscopic thermal conductivity of materials is introduced, and then realizations of the design are shown by numerical simulations and phenomenological estimations.

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Double Skin Façades (DSFs) are becoming increasingly popular architecture for commercial office buildings. Although DSFs are widely accepted to have the capacity to offer significant passive benefits and enable low energy building performance, there remains a paucity of knowledge with regard to their operation. Identification of the most determinant architectural parameters of DSFs is the focus of ongoing research. This paper presents an experimental and simulation study of a DSF installed on a commercial building in Dublin, Ireland. The DSF is south facing and acts to buffer the building from winter heat losses, but risks enhancing over-heating on sunny days. The façade is extensively monitored during winter months. Computational Fluid Dynamic (CFD) models are used to simulate the convective operation of the DSF. This research concludes DSFs as suited for passive, low energy architecture in temperature climates such as Ireland but identifies issues requiring attention in DSF design.

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Thermal lensing effect was studied in aqueous solutions of rhodamine B using 532 nm, 9 ns pulses from a Nd:YAG laser. A low intensity He-Ne laser beam was used for probing the thermal lens. Results obtained show that it is appropriate to use this technique for studying nonlinear absorption processes like two photon absorption or excited state absorption and for analyzing dimerization equilibria.