999 resultados para Photostructural changes
Resumo:
Photoexpansion and photobleaching effects have been observed in amorphous GeS(2) + Ga(2)O(3) (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper, micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the Ge-S bonds` breakdown and the formation of new Ge-O bonds, with an increase of the modes associated with Ge-O-Ge bonds and mixed oxysulphide tetrahedral units (S-Ge-O). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects. (C) 2010 Elsevier B.V. All rights reserved.
Resumo:
Photoexpansion and photobleaching effects have been observed in amorphous GeS2 + Ga2O3 (GGSO) thin films, when their surfaces were exposed to UV light. The photoinduced changes on the surface of the samples are indications that the structure has been changed as a result of photoexcitation. In this paper, micro-Raman, energy dispersive X-ray analysis (EDX) and backscattering electrons (BSE) microscopy were the techniques used to identify the origin of these effects. Raman spectra revealed that these phenomena are a consequence of the Ge-S bonds' breakdown and the formation of new Ge-O bonds, with an increase of the modes associated with Ge-O-Ge bonds and mixed oxysulphide tetrahedral units (S-Ge-O). The chemical composition measured by EDX and BSE microscopy images indicated that the irradiated area is oxygen rich. So, the present paper provides fundamental insights into the influence of the oxygen within the glass matrix on the considered photoinduced effects. (C) 2010 Elsevier B.V. All rights reserved.
Resumo:
The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga10Ge25S65 glasses has been studied through their effects on the structure and optical properties. To evaluate the photostructural change infrared and Raman spectra for bulk Ga10Ge25S65 glasses have been measured before and after exposure. The Raman spectra are interpreted in terms of models in which the Ge atoms are fourfold coordinated and the S atoms are two fold coordinated. The observed changes in the spectral region of (S-S) stretching vibration (470-490 cm (-1)) is a direct evidence for the occurrence of important structural changes in local bonding configuration caused by optical irradiation. It is shown that the dominant photostrucural changes are chain formation tendency of the chalcogenide atoms under the laser irradiation rather than rings.
