Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN NRs have sharp peaks E(2)(high) at 490.2 cm(-1) and A(1)(LO) at 591 cm(-1). The current transport mechanism of the NRs is limited by three types of mechanisms depending on applied bias voltages. The electrical transport properties of the device were studied in the range of 80 to 450 K. The faster rise and decay time indicate that the InN NRs/n-Si heterojunction is highly sensitive to IR light.

Unusual photoresponse of indium doped ZnO/organic thin film heterojunction

Photoresponse of n-type indium-doped ZnO and a p-type polymer (PEDOT:PSS) heterojunction devices are studied, juxtaposed with the photoluminescence of the In-ZnO samples. In addition to the expected photoresponse in the ultraviolet, the heterojunctions exhibit significant photoresponse to the visible (532 nm). However, neither the doped ZnO nor PEDOT: PSS individually show any photoresponse to visible light. The sub-bandgap photoresponse of the heterojunction originates from visible photon mediated e-h generation between the In-ZnO valence band and localized states lying within the band gap. Though increased doping of In-ZnO has limited effect on the photoluminescence, it significantly diminishes the photoresponse. The study indicates that optimally doped devices are promising for the detection of wavelengths in selected windows in the visible. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4704655]

Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenkel-Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330 A/W with an external quantum efficiency of 1100%. (C) 2012 The Japan Society of Applied Physics

Tuning ultrafast photoresponse of gold nanorods

Nondegenerate pump probe differential transmission experiments on gold nanorods with varying longitudinal surface plasmon resonance have revealed a new phenomenon where the polarity of the transient transmission signal can be reversibly switched between photo bleaching and photo-induced absorption by controlling probe fluence. Under the usual case where probe fluences are nominal, photo bleaching effect is observed for the nanorods with longitudinal surface plasmon resonance energy smaller than the probe photon energy. The laser-induced melting of the nanorods or change in their shape is ruled out for the observed optical switching effect. A quantitative understanding of the results is attempted by invoking a cascaded two-photon absorption dominant beyond a threshold probe fluence of similar to 75 mu J/cm(2).

Fabrication of large-area PbSe films at the organic-aqueous interface and their near-infrared photoresponse

An organic-aqueous interfacial reaction at room temperature has been employed to synthesize large-area self-assembled films consisting of PbSe single crystallites. The use of the films for the low-cost fabrication of IR-photodetectors has been explored. (111)-oriented single crystallites of PbSe self-assemble to form robust large-area films. The near-infrared photoresponse of the film measured at room temperature showed large responsivity and gain owing to trap-associated mechanisms. Low-cost, mild reaction conditions and tunability of the nature of deposits make the present strategy useful for synthesizing large-area films of functional materials for possible opto-electronic applications.

Enhanced Photoresponse in Monolayer Hydrogenated Graphene Photodetector

We report the photoresponse of a hydrogenated graphene (H-graphene)-based infrared (IR) photodetector that is 4 times higher than that of pristine graphene. An enhanced photoresponse in H-graphene is attributed to the longer photoinduced carrier lifetime and hence a higher internal quantum efficiency of the device. Moreover, a variation in the angle of incidence of IR radiation demonstrated a nonlinear photoresponse of the detector, which can be attributed to the photon drag effect. However, a linear dependence of the photoresponse is revealed with different incident powers for a given angle of IR incidence. This study presents H-graphene as a tunable photodetector for advanced photoelectronic devices with higher responsivity. In addition, in situ tunability of the graphene bandgap enables achieving a cost-effective technique for developing photodetectors without involving any external treatments.

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the presence of large number of edge threading dislocations at the interface. Room temperature photoluminescence studies were carried out to confirm the bandgap and the presence of defects. Temperature dependent I-V measurements of Al/InGaN/Si (111)/Al taken in dark confirm the rectifying nature of the device. I-V characteristics under UV illumination, showed modest rectification and was operated at zero bias making it a self-powered device. A band diagram of the heterojunction is proposed to understand the transport mechanism for self-powered functioning of the device. (c) 2015 AIP Publishing LLC.

Photoresponse of double-stacked graphene to Infrared radiation

We report the photoresponse of stacked graphene layers towards infrared radiation. Graphene is stacked in two configurations, namely, crossed and parallel layers. Raman analysis demonstrated a strong interaction among the stacked graphene layers. Graphene in the crossed configuration exhibited the presence of both negative and positive conductivities; however, other configurations of graphene exhibited positive conductivity only. The presence of negative photoconductivity is proposed to be due to oxygen or oxygen-related functional group absorbents that are trapped in between two monolayers of graphene and act as scattering centers for free carriers. An interesting trend is reported in differential conductivity when stacked layers are compared with multilayers and parallel-stacked graphene layers.

Effect of Magnetic Field on Photoresponse of Cobalt Integrated Zinc Oxide Nanorods

Cobalt integrated zinc oxide nanorod (Co-ZnO NR) array is presented as a novel heterostructure for ultraviolet (UV) photodetector (PD). Defect states in Co-ZnO NRs surface induces an enhancement in photocurrent as compared to pristine ZnO NRs PD. Presented Co-ZnO NRs PD is highly sensitive to external magnetic field that demonstrated 185.7% enhancement in response current. It is concluded that the opposite polarizations of electron and holes in the presence of external magnetic field contribute to effective separation of electron hole pairs that have drifted upon UV illumination. Moreover, Co-ZnO NRs PD shows a faster photodetection speed (1.2 s response time and 7.4 s recovery time) as compared to the pristine ZnO NRs where the response and recovery times are observed as 38 and 195 s, respectively.

Enhanced photoresponse from the ordered microstructure of naphthalocyanine-carbon nanotube composite film

Naphthalocyanine-sensitized multi-walled carbon nanotube (NaPc-MWNT) composites have been synthesized through the pi-stacking between naphthalocyanine (NaPc) and carbon nanotubes. The resultant nanocomposites were characterized with a scanning electron microscope (SEM), a transmission electron microscope (TEM), and by UV - vis absorption and photocurrent spectra. The long-range ordering was observed in the NaPc - MWNT composites by using a TEM. The enhancement in the absorption intensity and the broadening of the absorption wavelength observed in the composite films, which were due to the attachment of NaPc on the MWNT surface, is discussed based on the measured UV - vis absorption spectra. Furthermore, the photoconductivity of the poly( 3-hexylthiophene)(PAT6) - NaPc - MWNT composite film was found to increase remarkably in the visible region and broaden towards the red regions. These new phenomena were ascribed to the larger donor/acceptor (D/A) interface and the formation of a biconsecutive D/A network structure, as discussed in consideration of the photoinduced charge transfer between PAT6 and NaPc - MWNT.

ZnO thin film photoconductive ultraviolet detector with fast photoresponse

C-axis preferred oriented ZnO thin films were prepared on quartz substrates by RF sputtering. Photoconductive ultraviolet detector with planar interdigital electrodes was fabricated on ZnO thin film by the lift off technique. Linear I-V characteristic was observed under dark or 365 nm UV light illumination and has obvious difference. The photoresponsivity of 365 nm at 5 V bias is 18 A/W. The response time measure set mainly contains KrF excimer laser with the pulse width of 30 ns and the oscillograph with the bandwidth of 200 MHz. The result shows fast photoresponse with a rise time of 100 ns and fall time of 1.5 mu s. (c) 2005 Elsevier B.V. All rights reserved.

Unusual photoresponse of indium doped ZnO/organic thin film heterojunction

Photoresponse of n-type indium-doped ZnO and a p-type polymer (PEDOT:PSS) heterojunction devices are studied, juxtaposed with the photoluminescence of the In-ZnO samples. In addition to the expected photoresponse in the ultraviolet, the heterojunctions exhibit significant photoresponse to the visible (532 nm). However, neither the doped ZnO nor PEDOT: PSS individually show any photoresponse to visible light. The sub-bandgap photoresponse of the heterojunction originates from visible photon mediated e-h generation between the In-ZnO valence band and localized states lying within the band gap. Though increased doping of In-ZnO has limited effect on the photoluminescence, it significantly diminishes the photoresponse. The study indicates that optimally doped devices are promising for the detection of wavelengths in selected windows in the visible. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704655]