Ultrafast coherent spectroscopy of the Fermi edge singularity

Paper submitted to the XVI Sitges Conference on Statistical Mechanics, Sitges, Barcelona, Spain, 7-11 June 1999.

Fermi-edge singularities in linear and nonlinear ultrafast spectroscopy

We discuss Fermi-edge singularity effects on the linear and nonlinear transient response of an electron gas in a doped semiconductor. We use a bosonization scheme to describe the low-energy excitations, which allows us to compute the time and temperature dependence of the response functions. Coherent control of the energy absorption at resonance is analyzed in the linear regime. It is shown that a phase shift appears in the coherent control oscillations, which is not present in the excitonic case. The nonlinear response is calculated analytically and used to predict that four wave-mixing experiments would present a Fermi-edge singularity when the exciting energy is varied. A new dephasing mechanism is predicted in doped samples that depends linearly on temperature and is produced by the low-energy bosonic excitations in the conduction band.

The Yang-Lee edge singularity in spin models on connected and non-connected rings

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Unusual Yang-Lee edge singularity in the one-dimensional axial-next-to-nearest-neighbor Ising model

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Strong quantum memory at resonant Fermi edges revealed by shot noise

Studies of non-equilibrium current fluctuations enable assessing correlations involved in quantum transport through nanoscale conductors. They provide additional information to the mean current on charge statistics and the presence of coherence, dissipation, disorder, or entanglement. Shot noise, being a temporal integral of the current autocorrelation function, reveals dynamical information. In particular, it detects presence of non-Markovian dynamics, i.e., memory, within open systems, which has been subject of many current theoretical studies. We report on low-temperature shot noise measurements of electronic transport through InAs quantum dots in the Fermi-edge singularity regime and show that it exhibits strong memory effects caused by quantum correlations between the dot and fermionic reservoirs. Our work, apart from addressing noise in archetypical strongly correlated system of prime interest, discloses generic quantum dynamical mechanism occurring at interacting resonant Fermi edges.

Generalized partition function zeros of 1D spin models and their critical behavior at edge singularities

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Posição e densidade dos zeros de Yang-Lee do modelo de Blume-Emery-Griffiths unidimensional sobre anéis conexos e desconexos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Novo comportamento crítico da singularidade de Yang-Lee

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Wachstum und Transporteigenschaften dünner Co-basierter Heusler-Filme

For the advancement of spinelectronicsmuch importance is attached to Heusler compounds. Especially compounds with the stoichiometry Co2YZ are supposed to exhibit a large asymmetry between majority and minority electrons at the Fermi edge. Ideally, only majority states are present. This property leads to high magnetoresistive effects. However, the experimental results available at present fall behind the expectations. In particular, a strong reduction of the spin asymmetry with increasing temperature is problematic. For this reason,rnthe investigation of further representatives of this material class as well as optimization of their deposition is required. Therefore, during the course of this work thin Heusler films with the composition Co2Cr0.6Fe0.4Al and Co2Mn1−xFexSi were fabricated. At first, this was accomplished by sputter deposition, which is the standard technique for the preparation of thin Heuslerrnfilms. It resulted also here in samples with high structural order. On the other hand, these films exhibit only a reduced magnetic moment. To improve this situation, a laser ablation system was constructed. The resulting film deposition under ultra-high vacuum led to a clear improvement especially of the magnetic properties. In addition to the improved deposition conditions, this method allowed the flexible variation of the film stoichiometry as well. This possibility was successfully demonstrated in this work by deposition of epitaxial Co2Mn1−xFexSi films. The availableness of these high quality quaternary alloys allowed the systematic investigation of their electronic properties. Band structure calculations predict that the substitution of Mn by Fe lead to a shift of the Fermi energy over the minority energy gap, whereas the density of states remains nearly unchanged. This prediction could by tested by electronic transport measurements. Especially the normal Hall effect, which was measured at these samples, shows a transition from a hole-like charge transport in Co2MnSi to an electron-like transport in Co2FeSi. This is in accordance with corresponding band structure calculations as well as with comparative XMCD experiments. Furthermore, the behavior of the anomalous Hall effect was studied. Here it could be seen, that the effect is influenced by two mechanisms: On the one hand an intrinsic contribution, caused by the topology of the Fermi surface and on the other hand by temperature dependent impurity scattering. These two effects have an opposing influence on the anomalous Hall effect. This can lead to a sign reversal of the anomalous contribution. This behavior has been predicted just recently and was here systematically investigated for the first time for Heusler compounds.

Spinpolarisierte Rastertunnelmikroskopie magnetischer Nanostrukturen am Beispiel von bcc-Co/Fe(110), Fe/Mo(110) und Kupfer-Phthalocyanin/Fe(110)

In dieser Arbeit werden, nach einer Einführung in die spinpolarisierte Rastertunnelmikroskopie und -spektroskopie als experimentelle Methode zur Untersuchung magnetischer Nanostrukturen, Ergebnisse zur spinpolarisierten elektronischen Struktur in Abhängigkeit von der Kristallstruktur am Beispiel ultradünner Co-Schichten sowie in Abhängigkeit von der Magnetisierungsrichtung für ultradünne Fe-Schichten vorgestellt. Hochaufgelöste Messungen zeigen die ortsabhängige Spinpolarisation auf einem einzelnen Kupfer-Phthalocyanin Molekül. rnrnKobalt wurde durch pseudomorphes Wachstum auf den (110)-Oberflächen der kubisch raumzentrierten Metalle Chrom und Eisen deponiert. Im Unterschied zu früheren Berichten in der Literatur lassen sich nur zwei Lagen Co in der kubisch raumzentrierten (bcc) Ordnung stabilisieren. Die bcc-Co Schichten auf der Fe(110)-Oberfläche zeigen keine Anzeichen von epitaktischen Verzerrungen. rnDickere Schichten rekonstruieren in eine dicht gepackte Struktur (hcp/fcc). Durch die bcc Ordnung wird die Spinpolarisation von Kobalt auf P=62% erhöht (hcp-Co: P=45%). rnrnDie temperaturabhängige Spinreorientierung (SRT) ultradünner Filme Fe/Mo(110) wurde mit spinpolarisierter Spektroskopie untersucht. Eine Neuausrichtung der Magnetisierung aus der senkrechten [110]-Achse in die in der Ebene liegenden [001]-Achse wird bei T=(13,2+-0,5)K festgestellt, wobei es sich um einen diskontinuierlichen Reorientierungsübergang handelt, d.h. die freie Energie weist innerhalb eines bestimmten Temperaturbereichs gleichzeitig zwei Minima auf. Weiterhin wird in der Mono- und Doppellage Fe/Mo(110 eine Abhängigkeit der elektronischen Struktur von der Ausrichtung der magnetisch leichten Achse und von der Magnetisierung beobachtet. rnrnDie Untersuchung des spinpolarisierten Ladungstransports durch ein Kupfer-Phthalocyanin-Molekül auf der Fe/Mo(110) Oberfläche liefert einen wesentlichen Beitrag zum Verständnis des Spintransports an der Grenzfläche zwischen Metall und organischem Molekül. Die HOMO-LUMO-Energielücke des freien Moleküls wird durch die Wechselwirkung mit der Metalloberfläche mit Grenzflächenzuständen gefüllt. Diese Zustände reduzieren die Spinpolarisation des durch das Molekül fließenden Tunnelstroms durch einen zusätzlichen unpolarisierten Strombeitrag um einen Faktor zwei. Spinpolarisierte hybridisierte Grenzflächenzustände mit größerem Abstand zur Fermi-Energie führen in Abhängigkeit von der Position auf dem Molekül zu weiteren Beiträgen zur effektiven Spinpolarisation. Diese Untersuchungen belegen die Möglichkeit einer effektiven Spininjektion in organische Halbleiter und damit das Potential dieser Materialien für die weitere Entwicklung von Spintronik-Bauteilen.

Low-Dimensional Modelling for optimal streaks in the blasius boundary layer

This paper is concerned with the low dimensional structure of optimal streaks in the Blasius boundary layer. Optimal streaks are well known to exhibit an approximate self-similarity, namely the streamwise velocity re-scaled with their maximum remains almost independent of both the spanwise wavenumber and the streamwise coordinate. However, the reason of this self-similar behavior is still unexplained as well as unexploited. After revisiting the structure of the streaks near the leading edge singularity, two additional approximately self-similar relations involving the velocity components and their wall normal derivatives are identified. Based on these properties, we derive a low dimensional model with two degrees of freedom. The comparison with the results obtained from the linearized boundary layer equations shows that this model is consistent and provide good approximations.

Numerical simulation of the edge stress singularity and the adhesion strength for compliant mushroom fibrils adhered to rigid substrates

Open Access funded by European Research Council Acknowledgements RB thanks GRADUS, Faculty 8.4. Natural Sciences, of Saarland University for partially funding his research visit to the University of California, Santa Barbara. RB would also thank to Dr. S. Khaderi for his help in setting up the model. He also thanks Dr. R. Hensel and Dr. N. Guimard for fruitful discussions and for their continuous support. EA acknowledges funding from the European Research Council under the European Union's Seventh Framework Program (FP/2007-2013)/ERC Advanced Grant no. 340929.

Strongly correlated states of ultracold rotating dipolar Fermi gases

We study strongly correlated ground and excited states of rotating quasi-2D Fermi gases constituted of a small number of dipole-dipole interacting particles with dipole moments polarized perpendicular to the plane of motion. As the number of atoms grows, the system enters an intermediate regime, where ground states are subject to a competition between distinct bulk-edge configurations. This effect obscures their description in terms of composite fermions and leads to the appearance of novel quasihole ground states. In the presence of dipolar interactions, the principal Laughlin state at filling upsilon=1/3 exhibits a substantial energy gap for neutral (total angular momentum conserving) excitations and is well-described as an incompressible Fermi liquid. Instead, at lower fillings, the ground state structure favors crystalline order.

Switching on a two-dimensional time-harmonic scalar wave in the presence of a diffracting edge

This paper concerns the switching on of two-dimensional time-harmonic scalar waves. We first review the switch-on problem for a point source in free space, then proceed to analyse the analogous problem for the diffraction of a plane wave by a half-line (the ‘Sommerfeld problem’), determining in both cases the conditions under which the field is well-approximated by the solution of the corresponding frequency domain problem. In both cases the rate of convergence to the frequency domain solution is found to be dependent on the strength of the singularity on the leading wavefront. In the case of plane wave diffraction at grazing incidence the frequency domain solution is immediately attained along the shadow boundary after the arrival of the leading wavefront. The case of non-grazing incidence is also considered.

PL spectroscopy of Fermi electrons in regime of the quantum Hall effect

The influence of the interlayer coupling on formation of the quantized Hall phase at the filling factor v = 2 was studied in the multilayer GaAs/AlGaAs heterostructures The disorder broaden Gaussian photoluminescence line due to the localized electrons was found in the quantized Hall phase of the isolated multi-quantum well structure On the other hand. the quantized Hall phase of the weakly-coupled multilayers emitted an asymmetrical line similar to that one observed in the metallic electron systems. We demonstrated that the observed asymmetry indicates a formation of the Fermi Surface in the quantized Hall phase of the multilayer electron system due to the interlayer peicolation. A sharp decrease of the single-particle scattering time associated with the extended states oil the Fermi surface was observed at the filling factor v = 2. (C) 2009 Elsevier B.V All rights reserved