Photoluminescence of GaAs/AlGaAs quantum wells

In this thesis is studied the influence of uniaxial deformation of GaAs/AlGaAs quantum well structures to photoluminescence. Uniaxial deformation was applied along [110] and polarization ratio of photoluminescence at T = 77 K and 300 K was measured. Also the physical origin of photoluminescence lines in spectrum was determined and the energy band splitting value between states of heavy and light holes was estimated. It was found that the dependencies of polarization ratio on uniaxial deformation for bulk GaAs and GaAs/AlGaAs are different. Two observed lines in photoluminescence spectrum are induced by free electron recombination to energy sublevels of valence band corresponding to heavy and light holes. Those sublevels are splited due to the combination of size quantization and external pressure. The quantum splitting energy value was estimated. Also was shown a method, which allows to determine the energy splitting value of sublevels at room temperature and at comparatively low uniaxial deformation, when the other method for determining of the splitting becomes impossible.

Études de l’effet tunnel des spins quantiques macroscopiques

Dans cette thèse, nous présentons quelques analyses théoriques récentes ainsi que des observations expérimentales de l’effet tunnel quantique macroscopique et des tran- sitions de phase classique-quantique dans le taux d’échappement des systèmes de spins élevés. Nous considérons les systèmes de spin biaxial et ferromagnétiques. Grâce à l’approche de l’intégral de chemin utilisant les états cohérents de spin exprimés dans le système de coordonnées, nous calculons l’interférence des phases quantiques et leur distribution énergétique. Nous présentons une exposition claire de l’effet tunnel dans les systèmes antiferromagnétiques en présence d’un couplage d’échange dimère et d’une anisotropie le long de l’axe de magnétisation aisé. Nous obtenons l’énergie et la fonc- tion d’onde de l’état fondamentale ainsi que le premier état excité pour les systèmes de spins entiers et demi-entiers impairs. Nos résultats sont confirmés par un calcul utilisant la théorie des perturbations à grand ordre et avec la méthode de l’intégral de chemin qui est indépendant du système de coordonnées. Nous présentons aussi une explica- tion claire de la méthode du potentiel effectif, qui nous laisse faire une application d’un système de spin quantique vers un problème de mécanique quantique d’une particule. Nous utilisons cette méthode pour analyser nos modèles, mais avec la contrainte d’un champ magnétique externe ajouté. La méthode nous permet de considérer les transitions classiques-quantique dans le taux d’échappement dans ces systèmes. Nous obtenons le diagramme de phases ainsi que les températures critiques du passage entre les deux régimes. Nous étendons notre analyse à une chaine de spins d’Heisenberg antiferro- magnétique avec une anisotropie le long d’un axe pour N sites, prenant des conditions frontière périodiques. Pour N paire, nous montrons que l’état fondamental est non- dégénéré et donné par la superposition des deux états de Néel. Pour N impair, l’état de Néel contient un soliton, et, car la position du soliton est indéterminée, l’état fondamen- tal est N fois dégénéré. Dans la limite perturbative pour l’interaction d’Heisenberg, les fluctuations quantiques lèvent la dégénérescence et les N états se réorganisent dans une bande. Nous montrons qu’à l’ordre 2s, où s est la valeur de chaque spin dans la théorie des perturbations dégénérées, la bande est formée. L’état fondamental est dégénéré pour s entier, mais deux fois dégénéré pour s un demi-entier impair, comme prévu par le théorème de Kramer

Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures

Spin polarization is a key characteristic in developing spintronic devices. Diluted magnetic heterostructures (DMH), where subsequent layers of conventional and diluted magnetic semiconductors (DMS) are alternate, are one of the possible ways to obtain it. Si being the basis of modern electronics, Si or other group-IV DMH can be used to build spintronic devices directly integrated with conventional ones. In this work we study the physical properties and the spin-polarization effects of p-type DMH based in group-IV semiconductors (Si, Ge, SiGe, and SiC), by performing self-consistent (k) over right arrow . (p) over right arrow calculations in the local spin density approximation. We show that high spin polarization can be maintained in these structures below certain values of the carrier concentrations. Full spin polarization is attained in the low carrier concentration regime for carrier concentrations in the DMS layer up to similar to 2.0 x 10(19) cm(-3) for Si and up to similar to 6.0 x 10(19) cm(-3) for SiC. Partial, but still important spin polarization can be achieved for all studied group-IV DMH, with the exception of Ge for carrier concentrations up to 6.0 x 10(19) cm(-3). The role played by the effective masses and the energy splitting of the spin-orbit split-off hole bands is also discussed throughout the paper.

Uma abordagem de potencial e massa efetiva e a descrição de espaço de fase quântico para tratar sistemas de spins: Caracterizando o tunelamento de spin e propriedades da molécula de Fe8

Pós-graduação em Física - IFT

Spin coherence generation in negatively charged self-assembled (In,Ga)As quantum dots by pumping excited trion states

Spin coherence generation in an ensemble of negatively charged (In,Ga)As/GaAs quantum dots was investigated by picosecond time-resolved pump-probe spectroscopy measuring ellipticity. Robust coherence of the ground-state electron spins is generated by pumping excited charged exciton (trion) states. The phase of the coherent state, as evidenced by the spin ensemble precession about an external magnetic field, varies relative to spin coherence generation resonant with the ground state. The phase variation depends on the pump photon energy. It is determined by (a) pumping dominantly either singlet or triplet excited states, leading to a phase inversion, and (b) the subsequent carrier relaxation into the ground states. From the dependence of the precession phase and the measured g factors, information about the quantum dot shell splitting and the exchange energy splitting between triplet and singlet states can be extracted in the ensemble.

Advances in hardware and molecular design of polarizing agents for dynamic nuclear polarization

Die Kernmagnetresonanz (NMR) ist eine vielseitige Technik, die auf spin-tragende Kerne angewiesen ist. Seit ihrer Entdeckung ist die Kernmagnetresonanz zu einem unverzichtbaren Werkzeug in unzähligen Anwendungen der Physik, Chemie, Biologie und Medizin geworden. Das größte Problem der NMR ist ihre geringe Sensitivtät auf Grund der sehr kleinen Energieaufspaltung bei Raumtemperatur. Für Protonenspins, die das größte magnetogyrische Verhältnis besitzen, ist der Polarisationsgrad selbst in den größten verfügbaren Magnetfeldern (24 T) nur ~7*10^(-5).rnDurch die geringe inhärente Polarisation ist folglich eine theoretische Sensitivitätssteigerung von mehr als 10^4 möglich. rnIn dieser Arbeit wurden verschiedene technische Aspekte und unterschiedliche Polarisationsagenzien für Dynamic Nuclear Polarization (DNP) untersucht.rnDie technische Entwicklung des mobilen Aufbaus umfasst die Verwendung eines neuen Halbach Magneten, die Konstruktion neuer Probenköpfe und den automatisierten Ablauf der Experimente mittels eines LabVIEW basierten Programms. Desweiteren wurden zwei neue Polarisationsagenzien mit besonderen Merkmalen für den Overhauser und den Tieftemperatur DNP getestet. Zusätzlich konnte die Durchführbarkeit von NMR Experimenten an Heterokernen (19F und 13C) im mobilen Aufbau bei 0,35 T gezeigt werden. Diese Ergebnisse zeigen die Möglichkeiten der Polarisationstechnik DNP auf, wenn Heterokerne mit einem kleinen magnetogyrischen Verhältnis polarisiert werden müssen.rnDie Sensitivitätssteigerung sollte viele neue Anwendungen, speziell in der Medizin, ermöglichen.

First-principles calculation of P-type alloy scattering in Si1-xGex

The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements are calculated from the energy splitting of the valence bands, which arise when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Alloy scattering within the valence bands is found to be characterized by a single scattering parameter. The hole mobility is calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation. The results are in good agreement with experiments on bulk, unstrained alloys..

First-principles calculation of alloy scattering in GexSi1-x

First-principles electronic structure methods are used to find the rates of intravalley and intervalley n-type carrier scattering due to alloy disorder in Si1-xGex alloys. The required alloy scattering matrix elements are calculated from the energy splitting of nearly degenerate Bloch states which arises when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Scattering parameters for all relevant Delta and L intravalley and intervalley alloy scattering are calculated. Atomic relaxation is found to have a substantial effect on the scattering parameters. f-type intervalley scattering between Delta valleys is found to be comparable to other scattering channels. The n-type carrier mobility, calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys.

Theoretical Rationalization of the Singlet–Triplet Gap in OLEDs Materials: Impact of Charge-Transfer Character

New materials for OLED applications with low singlet–triplet energy splitting have been recently synthesized in order to allow for the conversion of triplet into singlet excitons (emitting light) via a Thermally Activated Delayed Fluorescence (TADF) process, which involves excited-states with a non-negligible amount of Charge-Transfer (CT). The accurate modeling of these states with Time-Dependent Density Functional Theory (TD-DFT), the most used method so far because of the favorable trade-off between accuracy and computational cost, is however particularly challenging. We carefully address this issue here by considering materials with small (high) singlet–triplet gap acting as emitter (host) in OLEDs and by comparing the accuracy of TD-DFT and the corresponding Tamm-Dancoff Approximation (TDA), which is found to greatly reduce error bars with respect to experiments thanks to better estimates for the lowest singlet–triplet transition. Finally, we quantitatively correlate the singlet–triplet splitting values with the extent of CT, using for it a simple metric extracted from calculations with double-hybrid functionals, that might be applied in further molecular engineering studies.

Splitting of the zero-energy edge states in bilayer graphene

Bilayer graphene nanoribbons with zigzag termination are studied within the tight-binding model. We also include single-site electron-electron interactions via the Hubbard model within the unrestricted Hartree-Fock approach. We show that either the interactions between the outermost edge atoms or the presence of a magnetic order can cause a splitting of the zero-energy edge states. Two kinds of edge alignments are considered. For one kind of edge alignment (?) the system is nonmagnetic unless the Hubbard parameter U becomes greater than a critical value Uc. For the other kind of edge alignment (?) the system is magnetic for any U>0. Our results agree very well with ab initio density functional theory calculations.

Fluorescenec Emission of SrS:Eu2+ Phosphor-Energy Level Splitting of Eu2+

A method of preparation of strontium sulphide phosphors doped with europium is given. Nitrogen laser excited fluorescence emission spectra of these phosphors in the visible region are recorded. A band with line structure in the region 350-430 nm and a new broad band at 460 nm are observed. The splitting pattern for the 6p levels of Eu 2+ are given.

Laser induced fluorescence of BaS: Sm phosphor and energy level splitting of Sm3+ ion

Fluorescence of BaS: Sm phosphor has been studied using a pulsed Nitrogen laser (337.1 nm) as the excitation source. The spectrum consists of a broad band in the region 540–660nm superposed by the characteristic Sm3+ lines. Energy level splitting pattern of Sm3+ due to crystal field effects has been calculated and relevent field parameters are evaluated. Analysis shows that Sm3+ takes up Ba2+ substitutional sites.

Full-dimensional quantum calculations of ground-state tunneling splitting of malonaldehyde using an accurate ab initio potential energy surface

Quantum calculations of the ground vibrational state tunneling splitting of H-atom and D-atom transfer in malonaldehyde are performed on a full-dimensional ab initio potential energy surface (PES). The PES is a fit to 11 147 near basis-set-limit frozen-core CCSD(T) electronic energies. This surface properly describes the invariance of the potential with respect to all permutations of identical atoms. The saddle-point barrier for the H-atom transfer on the PES is 4.1 kcal/mol, in excellent agreement with the reported ab initio value. Model one-dimensional and "exact" full-dimensional calculations of the splitting for H- and D-atom transfer are done using this PES. The tunneling splittings in full dimensionality are calculated using the unbiased "fixed-node" diffusion Monte Carlo (DMC) method in Cartesian and saddle-point normal coordinates. The ground-state tunneling splitting is found to be 21.6 cm(-1) in Cartesian coordinates and 22.6 cm(-1) in normal coordinates, with an uncertainty of 2-3 cm(-1). This splitting is also calculated based on a model which makes use of the exact single-well zero-point energy (ZPE) obtained with the MULTIMODE code and DMC ZPE and this calculation gives a tunneling splitting of 21-22 cm(-1). The corresponding computed splittings for the D-atom transfer are 3.0, 3.1, and 2-3 cm(-1). These calculated tunneling splittings agree with each other to within less than the standard uncertainties obtained with the DMC method used, which are between 2 and 3 cm(-1), and agree well with the experimental values of 21.6 and 2.9 cm(-1) for the H and D transfer, respectively. (C) 2008 American Institute of Physics.

The influence of microstructure on the maximum load and fracture energy of refractory castables

Refractory castables are composed of fractions of fine to fairly coarse particles. The fine fraction is constituted primarily of raw materials and calcium aluminate cement, which becomes hydrated, forming chemical bonds that stiffen the concrete during the curing process. The present study focused on an evaluation of several characteristics of two refractory castables with similar chemical compositions but containing aggregates of different sizes. The features evaluated were the maximum load, the fracture energy, and the ""relative crack-propagation work"" of the two castables heat-treated at 110, 650, 1100 and 1550 degrees C. The results enabled us to draw the following conclusions: the heat treatment temperature exerts a significant influence on the matrix/aggregate interaction, different microstructures form in the castables with temperature, and a relationship was noted between the maximum load and the fracture energy. (C) 2009 Elsevier Ltd and Techna Group S.r.l. All rights reserved.