EFFECT OF V, NB, AND TA DOPING ON THE 2223 PHASE-FORMATION AND THE CRYSTAL-STRUCTURE IN THE BISRCACUO SYSTEM

X-ray diffraction and electrical and diamagnetic analyses revealed that the 2223 phase was significantly enhanced by high-valence cation (V5+, Nb5+, Ta5+, etc.) doping in BiSrCaCuO samples. The optimum nominal composition was Bi1.6M0.4Sr2Ca2Cu3 O(y)(M =

THE RELATIONSHIP AMONG OXYGEN-CONTENT, DEFECT DISTRIBUTION AND SUPERCONDUCTIVITY IN BISRCACUO SYSTEMS

The effect of oxygen content on superconductivity of the 2212 and 2223 phase has been studied. By comparing the excess oxygen, the modulation vector, the XRD patterns, and the electric resistivity of 2212 and 2223 phase samples obtained with different post-annealing conditions, i.e., annealing at 600-degrees-C or quenching from 860-degrees-C, it was found that the superconductivity is markedly influenced by both the defect distribution in non-Bi layers and the interstitial oxygens incorporated in the Bi-O layers. A tentative explanation for this is given.

ANALYSIS OF A NEW SUPERCONDUCTING PHASE IN THE BISRCACUO SYSTEM

By doping Sb, Ba and In to the Bi-system and with the variation of nominal atomic ratio of Cu, Sr and Ca, a new possible phase is found with T(c) almost-equal-to 105 K, but with a structure of 2212 phase. Effects of post-sintering treatment from air-quenched to O2-annealed were investigated for the approximately 105 K new phase.

Measurement of laser ablation threshold on doped BiSrCaCuO high temperature superconductors by the pulsed photothermal deflection technique

Laser‐induced damage and ablation thresholds of bulk superconducting samples of Bi2(SrCa)xCu3Oy(x=2, 2.2, 2.6, 2.8, 3) and Bi1.6 (Pb)xSr2Ca2Cu3 Oy (x=0, 0.1, 0.2, 0.3, 0.4) for irradiation with a 1.06 μm beam from a Nd‐YAG laser have been determined as a function of x by the pulsed photothermal deflection technique. The threshold values of power density for ablation as well as damage are found to increase with increasing values of x in both systems while in the Pb‐doped system the threshold values decrease above a specific value of x, coinciding with the point at which the Tc also begins to fall.  

EFFECT OF A SI LAYER ON THE SUPERCONDUCTIVE PROPERTIES OF A BIPBSRCACUO THIN-FILM

The Pb-doped BiSrCaCuO superconducting films were grown by the single source mixed evaporation technique. The microbridges of dimensions 50 mum x 40 mum were fabricated by standard photolithography technologies. Si films with a thickness of 2500 angstrom were deposited on the microbridge area surfaces of BiPbSrCaCuO superconducting films by rf-magnetron sputtering. A greatly lowered zero resistance temperature of the microbridge area of the BiPbSrCaCuO film after Si sputtering was found. A non-linear effect of the current-voltage (I-V) characteristics at 78 K was shown. The high-frequency capacitance-voltage (C-V) curve of this structure at 78 K was symmetrical with the maximum capacitance at V = 0, and the capacitance decreased with increasing applied bias voltage. Afl experimental results are discussed.

THIN-FILM BIPBSRCACUO DIRECT-CURRENT SUPERCONDUCTING QUANTUM INTERFERING DEVICES OPERATING AT 78-K

Direct current SQUIDs (superconducting quantum interference devices) have been successfully fabricated by using a Pb-doped BiSrCaCuO superconducting thin film made by mixed evaporation of a single source composed of related components with a resistance heater. The dc SQUID comprises a square washer with a small hole. These SQUIDs show perfectly periodic voltage-flux characteristics without magnetic shield, that is, typically, the flux noise and energy resolution at a frequency range from dc to 1 Hz and at 78 K being 1.7 x 10(-3) PHI-0/ square-root Hz and 3.6 x 10(-26) J/Hz, respectively. Meanwhile, we have found out that one of the SQUIDs still was able to operate on flux-locked mode without bias currents and showed voltage-flux second harmonic characteristics. This phenomenon is not well understood, but it may be related to I-V (current-voltage) characteristics of the dc SQUID.

掺W对Bi系中高Tc超导相的影响

自Maeda发现高Tc超导体BiSrCaCuO以来,引起了人们广泛兴趣;由于它有较高的超导转变温度(Tc>100K),无剧毒、价廉和自高温冷却到室温无结构相变等特点,Bi系是一很有实用前景的高Tc超导体;已经确定Bi系中含有三个超导相(2201,2212,2223相),但是迄今要制得较纯的2223高Tc相还有一定困难,无疑这对它的基础研究和实用开发都受到了限制,因此制备更纯的Bi系2223相具有重要的意义。

V、Nb、Ta对促进Bi系超导体中2223相生成作用研究

自发现BiSrCaCuO超导体以来,为了稳定2223高T_C相结构、增加其在超导体中的含量,在该体系中引入掺杂元素Pb被公认是最有效的方法。我们系统研究了V~(5+)、Nb~(5+)、Ta~(5+)高价离子的单独掺入Bi系中对

Bi系中2212相的超导电性研究

已知在Bi系高Tc超导体中存在三个超导相:2223相的Tc～110k,c～37(?);2212相的Tc～85k,c～30.6(?);2201相的Tc～10k。在实验过程中,我们注意到还可能有另外的超导相存在,通过改变元素名义配比和制备工艺观察到一个具有2212相结构,但Tc却表现为～105k的新现象存在。 实验部分 样品制备采用固相反应方法将Bi_2O_3、PbO、Sb_2O_3、SrCO_3、CaCO_3、CuO(均为A.R.级)混匀、碾磨,于～810℃在刚玉坩埚中预烧20h;再碾,压片后于～870℃在磁舟中烧结60-240h,然后作测试分析。

Ba对BiPbSbSrCaCuO超导电性的影响

在BiPbSbSrCaCuO中加入适量Ba可以使2223相稳定存在,并且可以加快其生成。随着烧结时间的延长,C轴逐渐增大。同时,Ba的加入会分解和抑制2212相的生成。当名义组成为Bi_(1.5)Pb_(0.4)Sb_(0.1)Sr_(1.8)Ba_(0.2)Ca_(2.2)Cu_2Oy时,其Tc=110.0k。

Bi-Sr-Ca-Cu-O体系中可能存在一个新的高T_c超导相

最近,Pb能加强BiSrCaCuO超导体中高T_c相(即2223相,其c(?)37,T_c(?)110K)的出现和掺入sb形成BiPbSbSrCaCuO的T_c可以达到132 K已见报道,我们希望通过其它元素的掺杂取代也出现类似的结果。我们做了大量掺Sb、Ba、In的实验,通过改变

Composition analysis of high-Tc superconducting thin films by quantitative x-ray fluorescence

A method is presented for determining the composition of thin films containing the elements Bi, Sr, Br, Cu, and Ca. Quantitative x-ray fluorescence (XRF) consisting of radioactive sources (secondary foil excitor 241Am-Mo source and 55Pe source), a Si(Li) detector, and a multichannel analyzer were employed. The XRF system was calibrated by using sol gel thin films of known element composition and also by sputtered thin films analyzed by the conventional Rutherford Back Scattering (RBS). The XRF system has been used to assist and optimize the sputter target composition required to produce high-Tc BiSrCaCuO films with the desired metal composition.

Planejamento e produção de um criostato de baixo custo para caracterização elétrica de materiais

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)