Behaviour of acceptor states in semiconducting BaTiO3 and SrTiO3

The semiconductivity inMTiO3 (M=Ba, Sr) in the temperature range of practical applications is greatly influenced by the electronic charge redistribution among the acceptor states, arising from the frozen cation vacancies as well as the transition metal ion impurities. The conductivity measurements and defect chemistry investigations above 800 K indicate that the predominant lattice defects areM− and oxygen vacancies. There is dominantp-type conduction at higherP O 2 values in acceptor doped materials at high temperatures. However, they are insulating solids around room temperature due to the redistribution of electrons between the neutral, singly-or doubly-ionised acceptor states. Results fromepr and resistivity measurements show that the above charge redistribution is dependent on crystal structure changes. Hence the electron or hole loss by the acceptor states is influenced by the soft modes which also accounts for the differences in electrical properties of BaTiO3 and SrTiO3. The results are also useful in explaining the positive temperature coefficient in resistance and some photo-electrochemcial properties of these solids.

Interface states of laser ablated BaTiO3 and Ba0.9Ca0.1TiO3 thin films in MFS structure determined by DLTS and C – V technique

BaTiO3 and Ba0.9Ca0.1TiO3 thin films were deposited on the p – type Si substrate by pulsed excimer laser ablation technique. The Capacitance – Voltage (C-V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal – Ferroelectric – Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C – V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C – V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne – Vaipaille method (High – low frequency C – V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor – ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO3 thin films using both the C – V and DLTS method. The interface states of the Ca doped BaTiO3 thin films were found to be higher than the pure BaTiO3 thin films.

Dielectric response of BaZrO3/BaTiO3 and SrTiO3/BaZrO3 superlattices

Dielectric materials with high tunability, low loss, and desired range of permittivity are an attractive class of materials for a variety of applications in microwave components such as tunable filters, phase shifters, antennas, etc. In this article, we have investigated the low frequency dielectric properties of BaZrO3/BaTiO3 and SrTiO3/BaZrO3 superlattices of varying modulation periods for the potential application toward electrically tunable devices. The dielectric response of the superlattices as a function of temperature revealed remarkable stability for both types of superlattices, with no observed dielectric anomalies within that range. Dielectric losses were also nominally low with minimal variation within the measured temperature range. Sufficiently high tunability of ∼ 40% was observed for the BaZrO3/BaTiO3 superlattices at the lowest individual layer thicknesses. In comparison, the SrTiO3/BaZrO3 superlattices showed a minimum tunability for lowest period structures. It showed maximum tunability of ∼ 20% at 10 kHz and room temperature at an intermediate dimension of 3.85 nm periodicity superlattice. The tunability value degraded with increasing as well as decreasing periodicities for the SrTiO3/BaZrO3 superlattices. The dielectric response has been explained on the basis of size effects, interlayer coupling between dissimilar materials, domain contribution, and depolarizing electric fields.

Electrical properties of screen printed BaTiO3 thick films

The deposition of thick film pastes by screen-printing is a relatively simple and convenient method to produce thicker layers with thickness up to 100 mum. In the present work, the barium titanate thick films were prepared from mechanically activated powders based on BaC03 and TiO2. After mixing, the powders were calcined at low temperature by slow heating and cooling rates. The thick films were deposited on to Al2O3 substrates through hybrid technology. The obtained films were fired at 850 degreesC together with electrode material (silver/palladium). The electrical properties of thick films: dielectric permittivity, dielectric losses, Curie temperature, hysteresis loop were reported. The obtained BT thick films can be applied in as multilayer capacitors or in gas sensor application. (C) 2003 Elsevier Ltd. All rights reserved.

Secondary phases in Nb-doped BaTiO3 ceramics

In this work, the effect of Nb2O5 addition on the microstructure of BaTiO3 was studied. From XRD diagrams, a diminution in tetragonality parameters with an increase in dopant concentration was observed. In order to determine morphology and composition of secondary phases in niobium-doped barium titanate, EDAX and SEM analyses were carried out. It was found that a concentration of dopant higher than 0.15 mol% leads to fine-grained BaTiO3 without abnormal grain growth. Otherwise, compositions of secondary phases correspond to the titanium-rich region in the BaO-TiO2 phase diagram. Besides, the titanium content in the precipitate increases with the Nb2O5 addition. (C) 2002 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.

Theoretical and experimental study of the relation between photoluminescence and structural disorder in barium and strontium titanate thin films

Thin films of barium and strontium titanate (BST), synthesized by the polymeric precursor solution and spin coated on [Pt (140nm)/Ti (10 nM)/SiO2(1000 nm)/Si] substrates were found to be photoluminescent at room temperature when heat treated below 973 K, i.e. before their crystallization. First principles quantum mechanical techniques, based on density functional theory (DFT) were employed to study the electronic structure of two periodic models: one is standing for the crystalline BST thin film and the other one for the structurally disordered thin film. The aim is to compare the photoluminescence (PL) spectra of the crystalline and disordered thin films with their UV-vis spectra and with their computed electronic structures. The calculations show that new localized states are created inside the band gap of the crystalline model, as predicted by the UV-vis spectra. The study of the charge repartition in the structure before and after deformation of the periodic model shows that a charge gradient appears among the titanate clusters. This charge gradient, together with the new localized levels, gives favorable conditions for the trapping of holes and electrons in the structure, and thus to a radiative recombination process. Our models are not only consistent with the experimental data, they also allow to explain the relations between structural disorder and photoluminescence at room temperature. (c) 2005 Elsevier Ltd. All rights reserved.

Improvement of the ferroelectric properties of ABO(3) (A= Pb, Ca, Ba; B=Ti, Zr) films

High-quality ABO(3)/LaNiO3 (A = Ph, Ca, Ba; B = Ti, Zr) hetero structures have been grown on LaAlO3 (1 0 0) substrate by the chemical solution deposition method and crystallized by a microwave oven technique. The structural, morphological and electric properties were characterized by means of X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric and ferroelectric measurements. XRD patterns revealed single-phase polycrystalline and oriented thin films whose feature depends on the composition of the films. The AFM surface morphologies showed a smooth and crack-free surface with the average grain size ranging from 116 to 300 nm for both LaNiO3 electrode and the ferroelectric films. Dielectric measurements on these samples revealed dielectric constants as high as 1800 at frequency of 100 KHz. Such results showed that the combination of the chemical solution method with the microwave process provides a promising technique to grow high-quality thin films with good dielectric and ferroelectric properties. (c) 2005 Elsevier Ltd. All rights reserved.

Sensors based on the dissipation characteristics of n-BaTiO3 ceramics and its solid solutions

The humidity, heat flux and mass flow sensing capability of n-BaTiO3 and its solid solutions were evaluated based on their dissipation characteristics. The cubic/tetragonal phase content of the ceramics seem to play an important role in their sensitivity towards the measurand. The humidity-sensitive characteristics of these perovskites were studied with respect to different moisture sensitive coating materials. The sensor was also used to determine the heat of hydration during the curing process of cements and the mass flow rate of the gases. For all these applications, suitable operating points have been fixed from the highly non-linear I-V characteristics with the retention of good stability and high sensitivity. (C) 1997 Elsevier Science S.A.

Ferroelectric interaction and polarization studies in BaTiO3/SrTiO3 superlattice

Ferroelectric superlattice structures consisting of alternating layers of BaTiO3 and SrTiO3 with variable interlayer thickness were grown on Pt (111)/TiO2/SiO2/Si (100) substrates by pulsed laser deposition. The presence of superlattice reflections in the x-ray diffraction pattern clearly showed the superlattice behavior of the fabricated structures over a range of 6.4–20 nm individual layer thicknesses. Depth profile conducted by secondary ion mass spectrometry analysis showed a periodic concentration of Ba and Sr throughout the film. Polarization hysteresis and the capacitance-voltage characteristics of these films show clear size dependent ferroelectric characteristics. The spontaneous (Ps) and remnant (Pr) polarizations increase gradually with decreasing periodicity, reach a maximum at a finite thickness and then decrease. The competition between the size effect and long-range ferroelectric interaction is suggested as a possible reason for this phenomenon. The temperature dependence of Ps and Pr shows a single ferroelectric phase transition, and the Curie temperature is estimated to be about 316 K. The curve shows that the ferroelectric superlattice tends to form an artificial material, responding as a single structure with an averaged behavior of both the parent systems.

Flow Cytometry Analysis of Cytotoxicity In Vitro and Long-Term Toxicity of HA-40wt% BaTiO3 Nanoparticles In Vivo

The development of new implantable biomaterials requires bone-mimicking physical properties together with desired biocompatible property. In continuation to our earlier published research to establish compositional dependent multifunctional bone-like properties and cytocompatibility response of hydroxyapatite (HA)-BaTiO3 composites, the toxicological property evaluation, both invitro and invivo, were conducted on HA-40wt% BaTiO3 and reported in this work. In particular, this work reports invitro cytotoxicity of mouse myoblast cells as well as invivo long-term tissue and nanoparticles interaction of intra-articularly injected HA-40wt% BaTiO3 and BaTiO3 up to the concentration of 25mg/mL in physiological saline over 12weeks in mouse model. The careful analysis of flow cytometry results could not reveal any statistically significant difference in terms of early/late apoptotic cells or necrotic cells over 8d in culture. Extensive histological analysis could not record any signature of cellular level toxicity or pronounced inflammatory response in vital organs as well as at knee joints of Balb/c mice after 12weeks. Taken together, this study establishes nontoxic nature of HA-40wt% BaTiO3 and therefore, HA-40wt% BaTiO3 can be used safely for various biomedical applications.

Microstructural, structural and dielectric properties of Er(3+)-modified BaTi(0.85)Zr(0.15)O(3) ceramics

The (micro)structural and electrical properties of undoped and Er(3+)-doped BaTi(0.85)Zr(0.15)O(3) ceramics were studied in this work for both nominal Ba(2+) and Ti(4+) substitution formulations. The ceramics were produced from solid-state reaction and sintered at 1400 degrees C for 3 h. For those materials prepared following the donor-type nominal Ba(1-x)Er(x)(Ti(0.85)Zr(0.15))O(3) composition, especially, Er(3+) however showed a preferential substitution for the (Ti,Zr)(4+) lattice sites. This allowed synthesis of a finally acceptor-like, highly resistive Ba(Ti,Zr,Er)O(3-delta)-like system, with a solubility limit below but close to 3 cat.% Er(3+). The overall phase development is discussed in terms of the amphoteric nature of Er(3+), and appears to mainly or, at least, partially also involve a minimization of stress effects from the ion size mismatch between the dopant and host cations. Further results presented here include a comparative analysis of the behavior of the materials` grain size, electrical properties and nature of the ferroelectric-to-paraelectric phase transition upon variation of the formulation and Er(3+) content. (C) 2008 Elsevier Ltd. All rights reserved.

Studies on structural and electrical properties of barium strontium titanate thin films developed by metallo-organic decomposition

Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members were deposited using the metallo-organic decomposition (MOD) technique. Processing parameters such as nonstoichiometry, annealing temperature and time, film thickness and doping concentration were correlated with the structural and electrical properties of the films. A random polycrystalline structure was observed for all MOD films under the processing conditions in this study. The microstructures of the films showed multi-grains structure through the film thickness. A dielectric constant of 563 was observed for (Ba0.7Sr0.3)TiO3 films rapid thermal annealed at 750 degrees C for 60 s. The dielectric constant increased with annealing temperature and film thickness, while the dielectric constant could reach the bulk values for thicknesses as thin as similar to 0.3 mu m. Nonstoichiometry and doping in the films resulted in a lowering of the dielectric constant. For near-stoichiometric films, a small dielectric dispersion obeying the Curie-von Schweidler type dielectric response was observed. This behavior may be attributed to the presence of the high density of disordered grain boundaries. All MOD processed films showed trap-distributed space-charge limited conduction (SCLC) behavior with slope of similar to 7.5-10 regardless of the chemistry and processing parameter due to the presence of main boundaries through the film thickness. The grain boundaries masked the effect of donor-doping, so that all films showed distributed-trap SCLC behavior without discrete-traps. Donor-doping could significantly improve the time-dependent dielectric breakdown behavior of BST thin films, mostly likely due to the lower oxygen vacancy concentration resulted from donor-doping. From the results of charge storage density, leakage current and time-dependent dielectric breakdown behavior, BST thin films are found to be promising candidates for 64 and 256Mb ULSI DRAM applications. (C) 1997 Elsevier Science S.A.

Gibbs Energy of Formation of Ca3Ti8Al12O37 and Phase Relations and Chemical Potentials in the System Al2O3-TiO2-CaO

The quaternary oxide in the system Al2O3-CaO-TiO2 is found to have the composition Ca3Ti8Al12O37 rather than CaTi3Al8O19 as reported in the literature. The standard Gibbs energy of formation of Ca3Ti8Al12O37 from component binary oxides is measured in the temperature range from 900 to 1250 K using a solid-state electrochemical cell incorporating single crystal CaF2 as the solid electrolyte. The results can be represented by the equation: delta G(f(0x))(0) (+/- 70)/J mol(-1) = -248474 - 15.706(T/K). Combining this information with thermodynamic data on calcium aluminates and titanates available in the literature, subsolidus phase relations in the pseudo-ternary system Al2O3-CaO-TiO2 are computed and presented as isothermal sections. The evolution of phase relations with temperature is highlighted. Chemical potential diagrams are computed at 1200 K, showing the stability domains of the various phases in the chemical potential-composition space. In each chemical potential diagram, chemical potential of one component is plotted against the cationic fraction of the other two components. The diagrams are valid at relatively high oxygen potentials where Ti is present in its four-valent state in all the oxide phases.

Formation of epitaxial BaTiO3/SrTiO3 multilayers grown on Nb-doped SrTiO3 (001) substrates

The formation of epitaxial BaTiO3/SrTiO3 multilayers; is studied in terms of the growth mechanism by investigating surface morphologies, crystalline orientations, microstructures, and structures of the interfaces, as well as by determining the dielectric properties. Under specific conditions, the epitaxial BaTiO3 films follow a layer-then-island (Stranski-Krastanov) mechanism on SrTiO3 (001)-oriented substrates. In view of actual efforts made to grow epitaxial superlattices involving very thin individual layers of BaTiO3 and/or SrTiO3, we have determined that the BaTiO3 films Of up to 6,nm thickness do not show any defects and have a sharp BaTiO3-on-SrTiO3 interface. On the contrary, SrTiO3-on-BaTiO3 interfaces within multilayers are rough, probably due to the different growth mechanisms of the two different materials, or due to a difference in the morphological stability of the growth surfaces caused by different surface energies of BaTiO3 and SrTiO3 and by different mobilities of the Ba and Sr atoms reaching the SrTi3 and BaTiO3 layers, respectively.

Bottom up strategies for the morphology control of BaTiO3 particulates

As propriedades funcionais dos materiais ferroeléctricos tais como a polarização reversível, piroelectricidade, piezoelectricidade, elevada actividade óptica não linear e comportamento dieléctrico não linear são fundamentais para a sua aplicação em sensores, microactuadores, detectores de infravermelhos, filtros de fase de microondas e memórias não-voláteis. Nos últimos anos, motivado pelas necessidades industriais de redução do tamanho dos dispositivos microelectrónicos, aumentando a eficiência volumétrica, tem sido feito um grande esforço ao nível da investigação para desenvolver estruturas ferroeléctricas à escala micro- e nano- métrica. É sabido que a redução de tamanho em materiais ferroeléctricos afecta significamente as suas propriedades. Neste sentido e considerando que foi previsto teoreticamente por cálculos ab initio que estruturas do tipo nanocilindros e nanodiscos apresentariam um novo tipo de ordem ferroeléctrica e, na expectativa de alcançar conhecimento para o desenvolvimento de uma nova geração de dispositivos microelectróncos, existe um grande interesse em desenvolver métodos de fabrico de nanoestruturas ferroeléctricas unidimensionais (1D) tais como nanocilindros e nanotubos. As estratégias de fabrico de nanoestruturas 1D até agora descritas na literatura indicam claramente as dificuldades inerentes à sua preparação. Existem duas grandes vias de síntese destas nanoestruturas: i) o método “topdown” que consiste na redução de tamanho de um dado material até à obtenção duma estrutura 1D; e ii) o método “bottom-up” em que átomos, iões e moléculas são agrupados para formar um material 1D. O método “top down” envolve em geral técnicas de desgaste, como o uso do feixe de electrões, que apesar de permitirem elevada precisão no posicionamento e no controlo do tamanho, falham em termos de resolução, exigem muito tempo e causam facilmente defeitos que deterioram as propriedades físicas destes materiais. Na metodologia “bottom up” a utilização de moléculas ou estruturas “molde” tem sido a mais explorada. As estructuras 1D podem também ser preparadas sem recorrer a “moldes”. Neste caso a agregação orientada é promovida pelo recurso a aditivos que controlam o crescimento dos cristais em direcções preferenciais. Neste contexto, neste trabalho utilizaram-se duas estratégias “bottom up” de baixo custo para a preparação de nanopartículas de titanato de bário (BaTiO3) com morfologia controlada: 1) síntese química (em solução e em fase vapor) com utilização de nanotubos de titanato TiNTs) como “moldes” e precursores de titânio 2) síntese química em solução com presença de aditivos. Os nanotubos de titanato de sódio foram preparados por síntese hidrotermal. Como existiam muitas dúvidas acerca da natureza estrutural e do mecanismo de formação dos NTs, a parte inicial do trabalho foi dedicada à realização de um estudo sistemático dos parâmetros intervenientes na síntese e à caracterização da sua estrutura e microestrutura. Foi demonstrado que os NTs têm a fórmula geral A2Ti2O5 (A = H+ or Na+), e não TiO2 (anátase) com defendido por vários autores na literatura, e podem ser preparados por método hidrotermal em meio fortemente alcalino usando como fonte de titânio TiO2 comercial na forma de anátase ou rútilo. A menor reactividade do rútilo exige temperaturas de síntese superiores ou tempos de reacção mais longos. A forma tubular resulta do tratamento hidrotermal e não de processos de lavagem e neutralização subsequentes. Se os NTs forem tratados após a síntese hidrotérmica em água a 200 ºC, transformam-se em nanocilindros. Uma das partes principais desta tese consistiu na investigação do papel dos NTs de titanato no crescimento anisotrópico de BaTiO3. O potencial funcionamento dos NTs como “moldes” para além de precursores foi testado em reacção com hidróxido de bário em síntese em solução e por reacção com um precursor orgânico de bário em fase vapor. Tendo por base os estudos cinéticos realizados, bem como as alterações estruturais e morfológicas das amostras, é possível concluir que a formação do BaTiO3 a partir de NTs de titanato de sódio, ocorre por dois mecanismos dependendo da temperatura e tempo de reacção. Assim, a baixa temperatura e curto tempo de reacção verifica-se que se formam partículas dendríticas de BaTiO3 cuja superfície é bastante irregular (“wild”) e que apresentam estrutura pseudo-cúbica. Estas partículas formam-se por reacção topotáctica na fronteira dos nanotubos de titanato de sódio. A temperaturas mais altas e/ou reacções mais longas, a reacção é controlada por um mecanismo de dissolução e precipitação com formação de dendrites de BaTiO3 tetragonais com superfície mais regular (“seaweed”). A microscopia de força piezoeléctrica mostrou que as dendrites “seaweeds“ possuem actividade piezoeléctrica superior à das dendrites “wild”, o que confirma o papel desempenhado pela estrutura e pela concentração de defeitos na rede na coerência e ordem ferroeléctrica de nanoestruturas. Os nossos resultados confirmam que os NTs de titanato não actuam facilmente como “moldes” na síntese em solução de BaTiO3 já que a velocidade de dissolução dos NTs em condições alcalinas é superior à velocidade de formação do BaTiO3. Assumindo que a velocidade de reacção dos NTs com o precursor de bário é superior em fase vapor, efectuou-se a deposição de um precursor orgânico de bário por deposição química de vapor sobre um filme de NTs de titnato de sódio depositados por deposição electroforética. Estudou-se a estabilidade dos NTs nas diferentes condições do reactor. Quando os NTs são tratados a temperaturas superiores a 700 ºC, ocorre a transformação dos NTs em nanocilindros de anatase por um mecanismo de agregação orientada. Quando se faz a deposição do precursor de bário, seguida de calcinação a 700 ºC em atmosfera oxidante de O2, verifica-se que a superficie dos NTs fica coberta com nanocristais de BaTiO3 independentemente da concentração de bário. O papel dos NTs de titanato no crescimento anisotrópico de BaTiO3 em fase vapor é assim descrito pela primeira vez. Em relação à metodologias de crescimento de partículas na ausência de “moldes” mas com aditivos fez-se um estudo sistemático utilizando 5 aditivos de natureza differente. As diferenças entre aditivos foram sistematizadas tendo em conta as diferenças estruturais e morfológicas verificadas. Está provado que os aditivos podem funcionar como modificadores de crescimento cristalino por alteração do seu padrão de crescimento ou por alteração da cinética de crescimento das faces cristalográficas do cristal. Entre os aditivos testados verificou-se que o ácido poliacrilíco adsorve em faces específicas do BaTiO3 alterando a cinética de crescimento e induzindo a agregação orientada das partículas. O polivinilpirrolidona, o docecilsulfato de sódio e hidroxipropilmetilcelulose actuam mais como inibidores de crescimento do que como modificadores do tipo de crescimento. A D-frutose aumenta a energia de activação da etapa de nucleação não ocorrendo formação de BaTiO3 para as mesmas condições dos outros aditivos. Esta tese clarifica o papel dos NTs de titanato de sódio enquanto precursores e “moldes” no crescimento anisotrópico de BaTiO3 em solução e em fase vapor. É feita também a abordagem do controlo morfológico do BaTiO3 através do uso de aditivos. As estratégias de preparação de BaTiO3 propostas são de baixo custo, reprodutíveis e fáceis de efectuar. Os resultados contribuem para uma melhor compreensão da relação tamanho – morfologia – propriedade em materiais ferroeléctricos nanométricos com vista à sua potencial aplicação.