999 resultados para 331.133
Resumo:
Este documento presenta un resumen de las principales corrientes teóricas que han tratado de dar una explicación a la discriminación laboral, asi como una exposición pedagógica de las principales modalidades mediante las cuales dicha discriminación se manifiesta. Se realiza un particular análisis de las consecuencias que dicha discriminación tiene, en particular para el caso de los jóvenes de América Latina, y finalmente se realiza una revisión de los estudios que sobre el tema se han realizado en Colombia, sus aspectos metodológicos y las conclusiones a las que dichos estudios han llegado.
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Contenido: El orden humano / Octavio N. Derisi – Los primeros principios / Gustavo E. Ponferrada – La filosofía analítica actual y su terapia mediante la filosofía cristiana y tomista / Teófilo Urdánoz – Verdad y relativismo según el pensamiento de Tomás de Aquino / William R. Darós – El mundo espiritual de la persona / Octavio N. Derisi – Ordo et mysterium / Emilio Komar – La filosofía cristiana de la libertad / Abelardo Lobato – El significado de la encíclica “Aeterni Patris” de León XIII, a los cien años de su publicación / Octavio N. Derisi – Notas y comentarios -- Bibliografía
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Tem início a sessão da Constituinte para discutir o novo regimento interno. No Plenário, o número de Parlamentares presentes mostrava que nenhuma proposta teria 280 votos. Na presidência da Assembleia Nacional Constituinte (ANC), o vice-presidente, o Senador Mauro Benevides (PMDB-CE), que substitui o Deputado Ulysses Guimarães (PMDB-SP), no momento ocupando a Presidência da República. O Deputado Alysson Paulinelli (PFL-MG) acredita que a votação será suficiente para ser aprovada a modificação viabilizando alguns itens que não estão compatíveis com o desejo da maioria do Congresso e do povo brasileiro. Mas o líder do PMDB, o Senador Fernando Henrique Cardoso (PMDB-SP), propôs o adiamento da sessão para conseguir um acordo. O Centrão se dividiu. O líder do PDS, o Deputado Amaral Netto (PDS-RJ), chega a disputar o microfone com outro líder do Centrão, O Deputado Roberto Cardoso Alves (PMDB-SP). Mas a palavra de conciliação surgiu através do líder do PTB, o Deputado Gastone Righi (PTB-SP). Os líderes decidem que o melhor dia para nova votação é na quarta-feira da próxima semana e com isso, a sessão foi adiada. O Deputado José Maria Eymael (PDC-SP) afirma que o momento é de entendimento, que atenda os anseios de toda sociedade representada na ANC. O Lider do PC do B, Deputado Haroldo Lima (PCdoB-BA) concordou com o adiamento para promover uma votação mais adequada. O Deputado Gastone Righi (PTB-SP) declara que para demonstrar que o centro democrático, a maioria real da Constituinte, não deseja confrontos, mas colaborar para uma Constituição nova que seja perene e coerente, o grupo concordou em adiar a votação. O Senador Fernando Henrique Cardoso (PMDB-SP) declara que após o Centrão atender ao seu pedido de adiamento da sessão, será realizado um trabalho de aprovação de medidas do regimento que viabilize uma votação mais célere e expresse realmente a vontade de todos. O Presidente Ulysses Guimarães (PMDB-SP) recebeu no Palácio do Planalto um dos líderes do Centrão, o Deputado Roberto Cardoso Alves (PMDB-SP), que encaminhava as decisões tomadas no Congresso. O Deputado José Costa (PMDB-AL) considera fundamental a constatação que nenhum grupo tem 280 votos para decidir qualquer matéria constitucional e que será através da negociação que será elaborada a Constituição, equacionando diversos temas. A Comissão Executiva do PFL se reuniu na busca de um acordo para votação da próxima semana no gabinete do presidente do partido, o Senador Marco Maciel (PFL-PE). O PFL está examinando também as propostas polêmicas que ainda serão votadas no Plenário da Constituinte. Outro tema em discussão é a proposta do Senador Carlos Chiarelli (PFL-RS), que deseja eleições gerais no país após a promulgação da Constituição.
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This short translation summarises experiments on the production of a highly dispersible precipitate of calcium carbonate. The translation covers the 'Experimental section' (of the original larger paper) only.
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A master-oscillator fiber power amplifier (MOPA) system with a 4-m-long Yb3+-doped homemade large mode area (LMA) double-clad fiber is reported. The system emits up to 133.8 W of amplified radiation at a wavelength of 1064 nm and a repetition rate of 100 kHz, limited only by the available pump power. Peak power of 300 kW at 20 kHz with a pulse duration of 15 ns is obtained. (c) 2006 Society of Photo-Optical Instrumentation Engineers.
Resumo:
A master-oscillator fiber power amplifier (MOPA) system with a 4-m-long Yb3+-doped homemade large mode area (LMA) double-clad fiber is reported. The system emits up to 133.8 W of amplified radiation at a wavelength of 1064 nm and a repetition rate of 100 kHz, limited only by the available pump power. Peak power of 300 kW at 20 kHz with a pulse duration of 15 ns is obtained. (c) 2006 Society of Photo-Optical Instrumentation Engineers.
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Self-aligned InAs quantum wires (QWRs) or three-dimensional (3D) islands are fabricated on GaAs(331)A substrates by molecular beam epitaxy (MBE). InAs QWRs are selectively grown on the step edges formed by GaAs layers. The surface morphology of InAs nanostructures is carefully investigated by atomic force microscopy (AFM) measurements. Different growth conditions, such as substrate temperature, growth approaches, and InAs coverage, exert a great effect on the morphology of InAs islands. Low substrate temperatures favour the formation of wirelike nanostructures, while high substrate temperatures favour 3D islands. The shape transition is attributed to the trade-off between surface energy and strain energy. A qualitative agreement of our experimental data with the theoretical results derived from the model proposed by Tersoff and Tromp is achieved.
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We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable. (C) 2005 American Institute of Physics.
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Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.
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Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.
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Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.
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Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.