Broadly tunable InGaAsP-InP strained multiquantum-well external cavity diode laser

In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated. © 2006 IEEE.

Photosensitivity mechanism of undoped poly(methyl methacrylate) under UV radiation at 325 nm and its spatial resolution limit

In this Letter, we provide evidence suggesting that the main photosensitive mechanism of an undoped poly(methyl methacrylate)-based microstructured optical fiber under UV radiation at 325 nm is a competitive process of both photodegradation and polymerization. We found experimentally that increasing strain during photo-inscription leads to an increased photosensitivity, which is evidence of photodegradation. Likewise, refractive index change in the fiber was measured to be positive, which provides evidence for further polymerization of the material. Finally, we relate the data obtained to the spatial recording resolution of the samples. © 2014 Optical Society of America.

Increase of the photosensitivity of undoped poly(methylmethacrylate) under UV radiation at 325 nm

In this paper we report, for the first time to our knowledge, an increase of the photosensitivity of a microstructured polymer optical fibre (mPOF) made of undoped PMMA due to applied strain during the fabrication of the gratings. In the work, fibre Bragg gratings (FBGs) have been fabricated in undoped PMMA mPOFs with a hexagonal structure of three rings in the inner cladding. Two sets of FBGs were inscribed at two different resonant wavelengths (827 nm and 1562 nm) at different strains using an UV He-Cd laser at 325 nm focused by a lens and scanned over the fibre. We observed an increase of the reflection of the fibre Bragg gratings when the fabrication strain is higher. The photosensitivity mechanism is discussed in the paper along with the chemical reactions that could underlie the mechanism. Furthermore, the resolution limit of the material was investigated. © 2014 Copyright SPIE.

Phase synchronization of a two-channel phase-sensitive amplifier based on optical injection-locking of InP quantum-dash mode-locked lasers

A synchronization scheme for a two-channel phase sensitive amplifier is implemented based on the injection-locking of single InP quantum-dash mode-locked laser. Error free performance with penalty <1 dB is demonstrated for both channels. © 2011 Optical Society of America.

Progress toward 100-G digital coherent pluggables using InP-based photonics

A new generation of high-capacity WDM systems with extremely robust performance has been enabled by coherent transmission and digital signal processing. To facilitate widespread deployment of this technology, particularly in the metro space, new photonic components and subsystems are being developed to support cost-effective, compact, and scalable transceivers. We briefly review the recent progress in InP-based photonic components, and report numerical simulation results of an InP-based transceiver comprising a dual-polarization I/Q modulator and a commercial DSP ASIC. Predicted performance penalties due to the nonlinear response, lower bandwidth, and finite extinction ratio of these transceivers are less than 1 and 2 dB for 100-G PM-QPSK and 200-G PM-16QAM, respectively. Using the well-established Gaussian-Noise model, estimated system reach of 100-G PM-QPSK is greater than 600 km for typical ROADM-based metro-regional systems with internode losses up to 20 dB. © 1983-2012 IEEE.

InP-based active and passive components for communication systems at 2 μm

Progress on advanced active and passive photonic components that are required for high-speed optical communications over hollow-core photonic bandgap fiber at wavelengths around 2 μm is described in this paper. Single-frequency lasers capable of operating at 10 Gb/s and covering a wide spectral range are realized. A comparison is made between waveguide and surface normal photodiodes with the latter showing good sensitivity up to 15 Gb/s. Passive waveguides, 90° optical hybrids, and arrayed waveguide grating with 100-GHz channel spacing are demonstrated on a large spot-size waveguide platform. Finally, a strong electro-optic effect using the quantum confined Stark effect in strain-balanced multiple quantum wells is demonstrated and used in a Mach-Zehnder modulator capable of operating at 10 Gb/s.

Ion bombardment induced compositional changes in compound semiconductor surfaces studied by XPS combined with LEISS

Surface compositional change of GaP, GaAs, GaSb, InP, InAs, InSb, GeSi and CdSe single crystals due to low keV noble gas ion beam bombardment has been investigated by combining X-ray Photoelectron Spectroscopy (XPS) and Low Energy Ion Scattering Spectroscopy (LEISS). The purpose of using this complementary analytical method is to obtain more complete experimental evidence of ion beam modification in surfaces of compound semiconductors and GeSi alloy to improve the understanding of the mechanisms responsible for these effects. Before ion bombardment the sample surfaces were analysed nondestructively by Angular Resolved XPS (ARXPS) and LEISS to get the initial distribution of surface composition. Ion bombardment experiments were carried out using 3keV argon ions with beam current of 1μA for a period of 50 minutes, compositional changes in the surfaces of compound semiconductors and GeSi alloy were monitored with normal XPS. After ion bombardment the surfaces were re-examined with ARXPS and LEISS. Both XPS and LEISS results showed clearly that ion bombardment will change the compositional distribution in the compound semiconductor and GeSi surfaces. In order to explain the observed experimental results, two major theories in this field, Sigmund linear collision cascade theory and the thermodynamic models based on bombardment induced Gibbsian surface segregation and diffusion, were investigated. Computer simulation using TRIM code was also carried out for assistance to the theoretical analysis. Combined the results obtained from XPS and LEISS analyses, ion bombardment induced compositional changes in compound semiconductor and GeSi surfaces are explained in terms of the bombardment induced Gibbsian surface segregation and diffusion.

A study of the electrical and optical properties of unhydrogenated neon-sputtered amorphous silicon

Films of amorphous silicon (a-Si) were prepared by r.f. sputtering in a Ne plasma without the addition of hydrogen or a halogen. The d.c. dark electrical conductivity, he optical gap and the photoconductivity of the films were investigated for a range of preparation conditions, the sputtering gas pressure, P, the target-substrate spacing, d, the self-bias voltage, Vsb, on the target and the substrate temperature, Ts. The dependence of the electrical and optical properties on these conditions showed that various combinations of P, d and Vsb, at a constant Ts, giving the same product (Pd/V sb) result in films with similar properties, provided that P, d and Vsb remain vithin a certain range. Variation of Pd/Vsb between about 0.2 and 0.8 rrTorr.cm!V varied the dark conductivity over about 4 orders of magnitude, the optical gap by 0.5 eV and the photoconductivity over 4-5 orders of magnitude. This is attributed to controlling the density-of-states distribution in the mobility gap. The temperature-dependence of photoconductivity and the photoresponse of undoped films are in support of this conclusion. Films prepared at relatively high (Pd/Vsb) values and Ts=300 ºc: exhibited low dark-conductivity and high thermal activation energy, optical gap and photoresponse, characteristic properties of a 'low density-of-states material. P-type doping with group-Ill elements (Al, B and Ga) by sputtering from a composite target or from a predoped target (B-.doped) was investigated. The systematic variation of room-temperature conductivity over many orders of magnitude and a Fermi-level shift of about 0.7 eV towards the valence-band edge suggest that substitutional doping had taken place. The effects of preparation conditions on doping efficiency were also investigated. The post-deposition annealing of undoped and doped films were studied for a temperature range from 250 ºC to 470 ºC. It was shown that annealing enhanced the doping efficiency considerably, although it had little effect on the basic material (a-Si) prepared at the optimum conditions (Pd/Vsb=0.8 mTorr.cm/V and Ts=300 $ºC). Preliminary experiments on devices imply potential applications of the present material, such as p-n and MS junctions.

Dielectric relaxation of polysiloxanes and kerr effect of p-phenylene vinylene oligomers

The dielectric relaxation behaviour of a series of cyclic and linear poly(dimethylsiloxanes) with overline nn in the range 28 to 99 has been studied, as a function of temperature (142.0K-157.5K) and frequency (12-105Hz). Activation energies for the -relaxation process, Davidson-Cole empirical distribution factors, , and mean-square dipole moments per repeat unit, < 2> , have been calculated. Differences in values of H_act reflected restricted dipolar rotation for the cyclic structures, compared to the linear structures, over the range of molecular weights studied. The dielectric relaxation behaviour of a series of linear oligomers of methyl phenyl siloxane, with n in the range 4 to 10, a series of linear fractions of poly(methyl phenyl siloxane), with overline n_n in the range 31 to 1370, and a cyclic oligomer of mehyl phenyl siloxane, with n = 10, has been studied as a function of temperature (155.5K-264.0K) and frequency (12-105Hz). Activation energies for the -relaxation process, Davidson-Cole and Cole-Cole empirical distribution factors, and , respectively, and mean-square dipole moments per repeat unit have been calculated. The reduced flexibility of short methyl phenyl siloxane chains, compared to dimethyl siloxane chains, was apparent from a comparison of dipole moment ratios. The dilectric relaxation behaviour of poly(methyl hydrogen siloxane) and poly(n-hexyl methyl siloxane) has been studied as a function of temperature and frequency. A polysiloxane liquid crystal has been synthesised and its dielectric relaxation behaviour has been studied, as a function of temperature and frequency, in the liquid crystalline phase and below T_g. Poly(p-phenylene vinylene) and related oligomers have been synthesised and characterised by a variety of experimental techniques. The Kerr effect of two oligomeric fractions, in solution in PPG 2025, has been measured. The electrical conductivities of the undoped and I_2-doped polymer and oligomers have been measured.

Cs promoted triglyceride transesterification over MgO nanocatalysts

The influence of Cs on the structure and basicity of nanocrystalline MgO was assessed via electron microscopy, CO2 chemisorption, XRD and XPS. Caesium incorporation via co-precipitation under supercritical conditions generates Cs2Mg(CO3)2 nanocrystallites with an enhanced density and strength of surface base sites. Wet impregnation proved less effective for modifying MgO nanocrystals. A strong synergy between Cs and Mg components in the co-precipitated material dramatically enhanced the rate of tributyrin transesterification with methanol relative to undoped MgO and homogeneous Cs2CO3 catalysts. On-stream deactivation of Cs-doped MgO reflects heavy surface carbon deposition and loss of the high activity Cs2Mg(CO3)2 phase due to limited Cs dissolution.

Time-dependent variation of fiber Bragg grating reflectivity in PMMA-based polymer optical fibers

In this paper we investigate the effects of viscoelasticity on both the strength and resonance wavelength of two fibre Bragg gratings (FBGs) inscribed in microstructured polymer optical fibre (mPOF) made of undoped PMMA. Both FBGs were inscribed under a strain of 1% in order to increase the material photosensitivity. After the inscription the strain was released and the FBGs spectra were monitored. We initially observed a decrease of the reflection down to zero after which it began to increase. After that, strain tests were carried out to confirm the results and finally the gratings were monitored for a further 120 days, with a stable reflection response being observed beyond 50 days.

Evaluation on a 60 GHz radio over fiber system employing photonic up conversion and optically beam formed linear array antenna for broadband indoor access

In this study, two linear coplanar array antennas based on Indium Phosphide (InP) substrate are designed, presented and compared in terms of bandwidth and gain. Slot introduction in combination with coplanar structure is investigated, providing enhanced antenna gain and bandwidth at the 60 GHz frequency band. In addition the proposed array antennas are evaluated in terms of integration with a high-speed photodiode and investigated in terms of matching, providing a bandwidth that reaches 2 GHz. Moreover a potential beam forming scenario combined with photonic up-conversion scheme has been proposed. © 2013 IEEE.