Self-seeded gain-switched operation of an InGaN MQW laser diode

Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.

InAs/AlSb widely tunable external cavity quantum cascade laser around 3.2 μm

Room temperature, tunable, external-cavity short-wavelength InAs/AlSb quantum cascade laser (QCL) is reported. Wavelength tuning of 85 nm for the spectral range between 3190 nm and 3275 nm has been achieved by rotating the diffraction grating forming the external cavity. To suppress lasing inside the QCL cavity, its ridge was tilted by 7° at the external cavity end. The optimal tilting angle of the laser ridge was chosen by careful consideration of the return losses of the TM-polarized waveguide mode from the diffraction grating in a quasi-Littrow configuration and the Fabry-Pérot feedback from the tilted laser facet. No antireflection coating was used. © 2013 American Institute of Physics.