3 resultados para Intergenic spacer

em Aston University Research Archive


Relevância:

10.00% 10.00%

Publicador:

Resumo:

A set of closely related furylidene thiosemicarbazones was prepared and screened against various clinically important Gram-positive bacteria. One compound containing an ethylene spacer and a 5-nitrofuryl group was found to have promising activity against Clostridium difficile.

Relevância:

10.00% 10.00%

Publicador:

Resumo:

This Brief Report presents giant extraordinary Hall effect (EHE) in the Ru-mediated antiferromagnetically coupled [Pt/Co]5/Ru/[Co/Pt]5 multilayers (MLs) compared with those MLs without the Ru spacer. The enhancement of the EHE is attributed to the strong Ru/Co interface scattering. Through the variation in the Pt layer thickness and the temperature, we determine the relation between the Hall voltage and the longitudinal resistivity. It is found that the conventional scaling analysis has difficulties in consistently interpreting our data.

Relevância:

10.00% 10.00%

Publicador:

Resumo:

Full text: Semiconductor quantum dot lasers are attractive for multipletechnological applications in biophotonics. Simultaneous two-state lasing ofground state (GS) and excited state (ES) electrons and holes in QD lasers ispossible under a certain parameter range. It has already been investigated in steady-stateoperations and in dynamical regimes and is currently a subject of the intesiveresearch. It has been shown that the relaxation frequency in the two-state lasingregime is not a function of the total intensity [1], as could be traditionallyexpected.In this work we study damping relaxation oscillations in QD lasersimultaneously operating at two transitions, and find that under variouspumping conditions, the frequency of oscillations may decrease, increase orstay without change in time as shown in Fig1.The studied QD laser structure wasgrown on a GaAs substrate by molecular-beam epitaxy. The active region includedfive layers of self-assembled InAs QDs separated with a GaAs spacer from a5.3nm thick covering layer of InGaAs and processed into 4mm-wide mesa stripe devices. The 2.5mm long lasers withhigh-and antireflection coatings on the rear and front facets lasesimultaneously at the GS (around 1265nm) and ES (around 1190nm) in the wholerange of pumping. Pulsed electrical pumping obtained from a high power (up to2A current) pulse source was used to achieve high output power operation. We simultaneously detect the total output and merely ES output using aBragg filter transmitting the short-wavelength and reflecting the long-wavelengthradiation. Typical QD does not demonstrate relaxation oscillations frequencybecause of the strong damping [2]. It is confirmed for the low (I<0.68A) andhigh (I>1.2 A) range of the pump currents in our experiments. The situationis different for a short range of the medium currents (0.68A