3 resultados para optically stimulated luminescent detectors

em ArchiMeD - Elektronische Publikationen der Universität Mainz - Alemanha


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Oktaedrisch koordinierte Übergangsmetalle mit der Elektronenkonfiguration [Ar]3d4 - 3d7 können in zwei unterschiedlichen elektronischen Zuständen existieren: im High-Spin (HS) oder im Low-Spin (LS) Zustand. Zum Beispiel kann Fe(II) in 1A1g (LS) oder 5T2g (HS) Konfiguration auftreten.Besonderes Interesse besteht in der Aufklärung des Mechanismus der kooperativen Wechselwirkung, die den Spinübergang im Festkörper bestimmt. Hierzu müssen zunächst die internen Freiheitsgrade der molekularen Einheiten bekannt sein. Besonders der Beitrag der molekularen Schwingungen zur Entropiedifferenz, die die Triebkraft des Spinübergangs darstellt, ist von entscheidender Bedeutung. Bisher existieren nur wenige detaillierte Untersuchungen zu den Schwingungseigenschaften der Spincrossovermoleküle.In Rahmen der vorliegenden Arbeit wurden die Schwingungseigenschaften einiger Komplexverbindungen, die Spincrossover zeigen, im Detail untersucht. Dazu wurden temperaturabhängige Raman-, Fern- und Mittel-Infrarot-Spektroskopie, Isotopensubstitution und Normalkoordinatenanalysen (NKA) in Verbindung mit Dichtefunktional-Rechnungen (DFT) verwendet.Die gewonnenen Werte der zugeordneten Schwingungsfrequenzen und die bestimmten Kraftkonstantenänderungen können nun zur Verfeinerung von theoretischen Modellen zur Beschreibung des Spinübergangs verwendet werden.

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Nanoscience aims at manipulating atoms, molecules and nano-size particles in a precise and controlled manner. Nano-scale control of the thin film structures of organic/polymeric materials is a prerequisite to the fabrication of sophisticated functional devices. The work presented in this thesis is a compilation of various polymer thin films with newly synthesized functional polymers. Cationic and anionic LC amphotropic polymers, p-type and n-type semiconducting polymers with triarylamine, oxadiazole, thiadiazole and triazine moieties are suitable materials to fabricate multilayers by layer-by-layer (LBL) self-assembly with a well defined internal structure. The LBL assembly is the ideal processing technique to prepare thin polymer film composites with fine control over morphology and composition at nano-scale thickness, which may have applications in photo-detectors, light-emitting diodes (LEDs), displays and sensors, as well as in solar cells. The multilayer build-up was investigated with amphotropic LC polymers individually by solution-dipping and spin-coating methods; they showed different internal orders with respect to layering and orientation of the mesogens, as a result of the liquid crystalline phase. The synthesized p-type and n-type semiconducting polymers were examined optically and electrochemically, suggesting that they are favorably promising as hole-(p-type) or electron-(n-type) transport materials in electronic and optoelectronic devices. In addition, we report a successful film deposition of polymers by the vacuum deposition method. The vapor deposition method provides a clean environment; it is solvent free and well suited to sequential depositions in hetero-structured multilayer system. As the potential applications, the fabricated polymer thin films were used as simple electrochromic films and also used as hole transporting layers in LEDs. Electrochemical and electrochromic characterizations of assembled films reveal that the newly synthesized polymers give rise to high contrast ratio and fast switching electrochromic films. The LEDs with vacuum deposited films show dramatic improvements in device characteristics, indicating that the films are promising as hole transporting layers. These are the result of not only the thin nano-scale film structures but also the combination with the high charge carrier mobility of synthesized semiconducting polymers.

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Future experiments in nuclear and particle physics are moving towards the high luminosity regime in order to access rare processes. In this framework, particle detectors require high rate capability together with excellent timing resolution for precise event reconstruction. In order to achieve this, the development of dedicated FrontEnd Electronics (FEE) for detectors has become increasingly challenging and expensive. Thus, a current trend in R&D is towards flexible FEE that can be easily adapted to a great variety of detectors, without impairing the required high performance. This thesis reports on a novel FEE for two different detector types: imaging Cherenkov counters and plastic scintillator arrays. The former requires high sensitivity and precision for detection of single photon signals, while the latter is characterized by slower and larger signals typical of scintillation processes. The FEE design was developed using high-bandwidth preamplifiers and fast discriminators which provide Time-over-Threshold (ToT). The use of discriminators allowed for low power consumption, minimal dead-times and self-triggering capabilities, all fundamental aspects for high rate applications. The output signals of the FEE are readout by a high precision TDC system based on FPGA. The performed full characterization of the analogue signals under realistic conditions proved that the ToT information can be used in a novel way for charge measurements or walk corrections, thus improving the obtainable timing resolution. Detailed laboratory investigations proved the feasibility of the ToT method. The full readout chain was investigated in test experiments at the Mainz Microtron: high counting rates per channel of several MHz were achieved, and a timing resolution of better than 100 ps after walk correction based on ToT was obtained. Ongoing applications to fast Time-of-Flight counters and future developments of FEE have been also recently investigated.